NGTG20N60L2TF1G - ON Semiconductor

Ordering number : ENA2202
NGTG20N60L2TF1G
N-Channel IGBT
http://onsemi.com
600V, 20A, VCE(sat);1.45V Single TO-3PF-3L
Features
• IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V)
• IGBT tf=67ns typ.
• Enhansment type
• Adaption of full isolation type package
• Maxium junction temperature Tj=175°C
Applications
• Power factor correction of white goods appliance
• General purpose inverter
Specifications
Absolute Maximum Ratings at Ta = 25°C, Unless otherwise specified
Parameter
Symbol
Collector to Emitter Voltage
VCES
Gate to Emitter Voltage
VGES
Collector Current (DC)
IC*1
Conditions
Ratings
Unit
600
V
±20
V
@ Tc=25°C *2
40
A
@ Tc=100°C *2
20
A
Limited by Tjmax
Collector Current (Pulse)
ICP
Pulse width Limited by Tjmax
Allowable Power Dissipation
PD
Tc=25°C (Our ideal heat dissipation condition) *2
Junction Temperature
Tj
Storage Temperature
Tstg
105
A
64
W
175
°C
- 55 to +175
°C
Note : *1 Collector Current is calculated from the following formula.
Tjmax - Tc
IC(Tc)=
Rth(j-c)×VCE(sat)(Tj, IC(Tc))
*2 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ) 7538-001
Ordering & Package Information
Device
Package
Shipping
note
NGTG20N60L2TF1G
TO-3PF-3L
SC-94
30
pcs. / tube
Pb-Free
NGTG20N60L2TF1G
5.5
15.5
4.5
3.0
Marking
10.0
3.6
Electrical Connection
3.5
5.0
2.0
25.0
24.5
2
19.3
2.0
2.0
4.0
0.75
2
3
3.3
1
5.45
5.45
2.0
0.9
1: Gate
2: Collector
3: Emitter
GTG20N
60L2 LOT No.
1
3
TO-3PF-3L
Semiconductor Components Industries, LLC, 2013
September, 2013
90413 TKIM TC-00002943 No.A2202-1/7
NGTG20N60L2TF1G
Electrical Characteristics at Ta = 25°C, Unless otherwise specified
Ratings
Parameter
Symbol
Conditions
Unit
min
Collector to Emitter Breakdown Voltage
Collector to Emitter Cut off Current
V(BR)CES
ICES
IC=500μA, VGE=0V
IGES
VGE=±20V, VCE =0V
Gate to Emitter Threshold Voltage
VGE(th)
VCE =20V, IC=250μA
VCE (sat)
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
tr
Turn-ON Time
ton
VCC=300V,IC=20A
RG=30Ω,L=200μH
Turn-OFF Delay Time
td(off)
VGE=0V/15V
Vclamp=400V
Fall Time
tf
Turn-OFF Time
toff
Total Gate Charge
Qg
Gate to Emitter Charge
Qge
Gate to Collector “Miller” Charge
Qgc
V
Tc=25°C
10
μA
Tc=150°C
1
mA
±100
nA
4.5
Tc=25°C
Collector to Emitter Saturation Voltage
max
600
VCE=600V, VGE=0V
Gate to Emitter Leakage Current
typ
VGE=15V, IC=20A
Tc=150°C
1.45
6.5
V
1.65
V
1.8
V
2000
pF
60
pF
Cres
50
pF
td(on)
60
ns
37
ns
400
ns
193
ns
VCE =20V,f=1MHz
See Fig.1, See Fig.2
VCE =300V, VGE=15V, IC=20A
67
ns
281
ns
84
nC
16
nC
37
nC
Thermal Characteristics at Ta = 25°C, Unless otherwise specified
Parameter
Symbol
Thermal Resistance (junction- Case)
Rth(j-c)
Thermal Resistance (junction- atmosphere)
Rth(j-a)
Conditions
Ratings
Unit
Tc=25°C (our ideal heat dissipation condition)*2
Fig.1 Switching Time Test Circuit
2.33
°C /W
47.5
°C /W
Fig.2 Timing Chart
Clamp Di
VGE
90%
10%
0
200μH
DUT
IC
VCC
RG
NGTG20N60L2TF1G
90%
0
VCE
90%
10%
10%
tf
td(off)
toff
10%
10%
tr
td(on)
ton
IT16383
No.A2202-2/7
NGTG20N60L2TF1G
No.A2202-3/7
NGTG20N60L2TF1G
No.A2202-4/7
NGTG20N60L2TF1G
No.A2202-5/7
NGTG20N60L2TF1G
Outline Drawing
NGTG20N60L2TF1G
Mass (g) Unit
5.5
mm
* For reference
No.A2202-6/7
NGTG20N60L2TF1G
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