3LP01SS : P-Channel Small Signal MOSFET

Ordering number : EN6648B
3LP01SS
P-Channel Small Signal MOSFET
http://onsemi.com
–30V, –0.1A, 10.4Ω, Single SSFP
Features
•
•
•
Low ON-resistance
High-speed switching
2.5V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
--30
V
±10
V
Allowable Power Dissipation
ID
IDP
PD
0.15
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
--0.1
A
--0.4
A
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7029A-003
• Package
: SSFP
• JEITA, JEDEC
: SC-81
• Minimum Packing Quantity : 8,000 pcs./reel
3LP01SS-TL-E
3LP01SS-TL-H
1.4
0.1
3
Packing Type: TL
Marking
0.8
0 to 0.02
2
0.45
TL
0.2
Electrical Connection
0.6
0.07
0.07
XA
LOT No.
1
LOT No.
0.3
1.4
0.3
0.25
1
2
3
3
1 : Gate
2 : Source
3 : Drain
SSFP
1
2
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/32406PE MSIM TB-00002156/92500 TSIM TA-1981 No.6648-1/7
3LP01SS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Conditions
V(BR)DSS
IDSS
ID= --1mA, VGS=0V
VDS= --30V, VGS=0V
VGS=±8V, VDS=0V
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID= --50mA, VGS= --4V
ID= --30mA, VGS= --2.5V
ID= --1mA, VGS= --1.5V
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
Ratings
min
typ
max
--30
VDS= --10V, ID= --100μA
VDS= --10V, ID= --50mA
V
--0.4
80
VDS= --10V, f=1MHz
See specified Test Circuit.
VDS= --10V, VGS= --10V, ID= --100mA
--1
μA
±10
μA
--1.4
110
V
mS
8
10.4
Ω
11
15.4
Ω
27
54
Ω
7.5
pF
5.7
pF
1.8
pF
24
ns
55
ns
120
ns
130
ns
1.43
nC
0.18
nC
0.25
IS= --100mA, VGS=0V
Unit
--0.83
nC
--1.2
V
Switching Time Test Circuit
0V
--4V
VDD= --15V
VIN
VIN
PW=10μs
D.C.≤1%
D
ID= --50mA
RL=300Ω
VOUT
G
3LP01SS
P.G
50Ω
S
Ordering Information
Package
Shipping
memo
3LP01SS-TL-E
Device
SSFP
8,000pcs./reel
Pb Free
3LP01SS-TL-H
SSFP
8,000pcs./reel
Pb Free and Halogen Free
No.6648-2/7
3LP01SS
ID -- VDS
--0.18
V
.5
--0.16
--6.0
--0.07
--0.06
--0.05
--0.04
--0.03
VGS= --1.5V
--0.02
--0.10
--0.08
--0.06
0
--0.2
0
--0.4 --0.6
--0.8
--1.0
--1.2
--1.4
--1.6
Drain-to-Source Voltage, VDS -- V
--1.8
--2.0
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
20
15
--50mA
ID= --30mA
5
--2
--3
--4
--5
--6
--7
--8
Gate-to-Source Voltage, VGS -- V
--9
--10
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
25°C
Ta=75°C
10
7
--25°C
5
3
2
1.0
--0.01
2
3
5
7
2
--0.1
Drain Current, ID -- A
,
mA
12
-I D=
10
V
30
A,
m
--50
I D=
8
4.0
= -V GS
6
4
2
--60
--40
--20
0
20
40
60
80
--25°C
5
3
2
2
3
100
Ambient Temperature, Ta -- °C
120
140
5
7
160
IT00083
2
--0.1
3
IT00080
RDS(on) -- ID
VGS= --1.5V
5
3
2
100
7
5
25°C
Ta=75°C
3
2
--25°C
2
3
5
7
2
--1.0
Drain Current, ID -- mA
Forward Transfer Admittance, | yfs | -- S
V
2.5
= -V GS
7
3
IT00082
| yfs | -- ID
1.0
16
14
25°C
Ta=75°C
10
IT00081
RDS(on) -- Ta
18
2
10
--0.1
3
--4.0
IT00078
3
7
3
--3.5
Drain Current, ID -- A
VGS= --2.5V
5
2
--3.0
VGS= --4V
1000
7
--2.5
RDS(on) -- ID
IT00079
RDS(on) -- ID
100
--2.0
5
1.0
--0.01
0
--1
--1.5
7
25
0
--1.0
100
Ta=25°C
10
--0.5
Gate-to-Source Voltage, VGS -- V
IT00077
RDS(on) -- VGS
30
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
--0.12
--0.02
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
--0.14
--0.04
--0.01
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
25°C
--25
°C
V
--2.0V
Ta=
--2
75°
C
--3
.0V
--4
.
--0.08
Drain Current, ID -- A
VDS= --10V
0V
--3.5V
--0.09
ID -- VGS
--0.20
Drain Current, ID -- A
--0.10
VDS= --10V
7
5
3
25°C
2
0.1
5°C
2
Ta= --
75°C
7
5
3
2
0.01
--0.01
2
3
5
7
--0.1
Drain Current, ID -- A
2
3
IT00084
No.6648-3/7
3LP01SS
IS -- VSD
3
Switching Time, SW Time -- ns
5
--0.01
--0.5
--0.6
--0.7
--25°C
2
25°C
3
Ta=7
5°C
--0.8
--0.9
--1.0
Diode Forward Voltage, VSD -- V
td(off)
100
7
5
tr
3
td(on)
2
3
2
10
Ciss
Coss
5
3
2
Crss
3
5
7
Drain Current, ID -- A
--0.1
IT00086
VGS -- Qg
VDS= --10V
ID= --0.1A
--9
7
2
--10
5
Ciss, Coss, Crss -- pF
tf
2
f=1MHz
7
--8
--7
--6
--5
--4
--3
--2
--1
1.0
0
0
--5
--10
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
--30
IT00087
0
0.2
0.4
0.6
0.8
1.0
1.2
Total Gate Charge, Qg -- nC
1.4
1.6
IT00088
PD -- Ta
0.20
Allowable Power Dissipation, PD -- W
3
IT00085
Ciss, Coss, Crss -- VDS
100
5
10
--0.01
--1.1
Gate-to-Sourse Voltage, VGS -- V
Source Current, IS -- A
7
VDD= --15V
VGS= --4V
7
2
--0.1
SW Time -- ID
1000
VGS=0V
0.15
0.10
0.05
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT02381
No.6648-4/7
3LP01SS
Embossed Taping Specification
3LP01SS-TL-E, 3LP01SS-TL-H
No.6648-5/7
3LP01SS
Outline Drawing
3LP01SS-TL-E, 3LP01SS-TL-H
Land Pattern Example
Mass (g) Unit
0.0018 mm
* For reference
Unit: mm
1.2
0.5
0.5
0.45
0.45
0.45 0.45
No.6648-6/7
3LP01SS
Note on usage : Since the 3LP01SS is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.6648-7/7