Ordering number : EN6555C 5LN01C N-Channel Small Signal MOSFET http://onsemi.com 50V, 0.1A, 7.8Ω, Single CP Features • • • Low ON-resistance Ultrahigh-speed switching 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings Unit VDSS VGSS Gate to Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) 50 V 0.1 A 0.4 A 0.25 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Allowable Power Dissipation PW≤10μs, duty cycle≤1% V ±10 This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Ordering & Package Information unit : mm (typ) 7013A-013 1.1 0.1 5LN01C-TB-E 5LN01C-TB-H memo 5LN01C-TB-E 3,000pcs./ reel Pb-Free 5LN01C-TB-H CP SC-59, TO-236, SOT-23, TO-236AB 3,000pcs./ reel Pb-Free and Halogen Free 1.5 3 Shipping CP SC-59, TO-236, SOT-23, TO-236AB 1 0.95 2 Packing Type: TB Marking 0.4 1 : Gate 2 : Source 3 : Drain CP YB LOT No. 0.3 0.5 2.5 0.5 2.9 Package LOT No. 0.05 Device TB Electrical Connection 3 1 2 Semiconductor Components Industries, LLC, 2013 June, 2013 62613 TKIM TC-00002951/62712 TKIM/33106PE MSIM TB-00002196/71400 TSIM TA-2050 No.6555-1/6 5LN01C Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS IDSS IGSS Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage VGS(off) | yfs | Forward Transfer Admittance Static Drain to Source On-State Resistance Input Capacitance Conditions ID=1mA, VGS=0V VDS=50V, VGS=0V Ratings min typ Unit max 50 VGS=±8V, VDS=0V VDS=10V, ID=100μA 0.4 VDS=10V, ID=50mA 0.13 V 1 μA ±10 μA 1.3 0.18 V S RDS(on)1 ID=50mA, VGS=4V 6 7.8 Ω RDS(on)2 ID=30mA, VGS=2.5V 7.1 9.9 Ω RDS(on)3 ID=10mA, VGS=1.5V 10 20 Ciss Ω 6.6 pF Output Capacitance Coss 4.7 pF Reverse Transfer Capacitance Crss 1.7 pF Turn-ON Delay Time td(on) tr 18 ns 42 ns 190 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=10V, ID=100mA 105 ns 1.57 nC 0.20 nC 0.32 IS=100mA, VGS=0V 0.85 nC 1.2 V Switching Time Test Circuit 4V 0V VDD=25V VIN ID=50mA RL=500Ω VOUT VIN PW=10μs D.C.≤1% D G 5LN01C P.G 50Ω S No.6555-2/6 5LN01C ID -- VDS VDS=10V 6.0 V VGS=1.5V 0.05 0.04 0.03 0.12 C 0.10 0.08 0.06 0.02 0.04 0.01 0.02 0 0 0 0.2 0.4 0.6 0.8 1.0 Drain to Source Voltage, VDS -- V 0 1.5 2.0 2.5 Static Drain to Source On-State Resistance, RDS(on) -- Ω 10 9 50mA ID=30mA 6 5 4 3.0 IT00055 RDS(on) -- ID VGS=4V 7 11 7 1.0 100 Ta=25°C 8 0.5 Gate to Source Voltage, VGS -- V IT00054 RDS(on) -- VGS 12 Static Drain to Source On-State Resistance, RDS(on) -- Ω 0.14 75° C Drain Current, ID -- A 0.16 0.07 0.06 Ta= --25° C 0.18 25° 5V V 2.0 2. 4.0V 0.08 Drain Current, ID -- A 3 .0 3.5V 0.09 ID -- VGS 0.20 V 0.10 5 3 2 10 Ta=75°C 25°C --25°C 7 5 3 2 3 1.0 0.01 2 0 1 2 3 4 5 6 7 8 Gate to Source Voltage, VGS -- V Static Drain to Source On-State Resistance, RDS(on) -- Ω 2 Ta=75°C 7 --25°C 25°C 3 2 1.0 0.01 2 3 5 7 2 0.1 Drain Current, ID -- A 8 0V = ID 4. S= , VG mA 50 I D= 6 4 2 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT00060 3 IT00057 3 2 Ta=75°C 10 7 --25°C 25°C 5 3 2 2 3 5 7 0.01 Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S .5V 2 VGS=1.5V 2 3 IT00059 | yfs | -- ID 1.0 2 S= , VG A 30m 0.1 RDS(on) -- ID IT00058 12 10 7 5 1.0 0.001 3 RDS(on) -- Ta 14 5 7 3 5 3 Drain Current, ID -- A 100 5 10 2 IT00056 VGS=2.5V 7 Static Drain to Source On-State Resistance, RDS(on) -- Ω 10 RDS(on) -- ID 100 Static Drain to Source On-State Resistance, RDS(on) -- Ω 9 VDS=10V 7 5 3 5°C 2 Ta= -- 2 75°C 25°C 0.1 7 5 3 2 0.01 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 IT00061 No.6555-3/6 5LN01C IS -- VSD 3 Switching Time, SW Time -- ns 5 --25 °C Ta= 75° C 25° C Source Current, IS -- A 0.1 3 2 0.01 0.5 0.6 0.7 0.8 0.9 1.0 Diode Forward Voltage, VSD -- V tf 100 7 2 10 Ciss 5 Coss 3 2 Crss 3 5 10 15 20 25 30 td(on) 2 2 3 5 7 10 0.1 IT00063 VGS -- Qg VDS=10V ID=100mA 8 7 6 5 4 3 2 1 1.0 0 tr 5 Drain Current, ID -- A Gate to Source Voltage, VGS -- V Ciss, Coss, Crss -- pF 3 7 td(off) 2 9 5 35 40 Drain to Source Voltage, VDS -- V 45 50 IT00064 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 1.8 IT00065 PD -- Ta 0.3 Allowable Power Dissipation, PD -- W 3 IT00062 f=1MHz 7 5 10 0.01 1.1 Ciss, Coss, Crss -- VDS 100 VDD=25V VGS=4V 7 2 7 SW Time -- ID 1000 VGS=0V 0.25 0.2 0.15 0.1 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02006 No.6555-4/6 5LN01C Outline Drawing 5LN01C-TB-E, 5LN01C-TB-H Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.0 0.8 0.95 0.95 No.6555-5/6 5LN01C Note on usage : Since the 5LN01C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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