3LP01M-TL-H - ON Semiconductor

Ordering number : EN6139D
3LP01M
P-Channel Small Signal MOSFET
http://onsemi.com
–30V, –0.1A, 10.4Ω, Single MCP
Features
•
•
•
Low ON-resistance
High-speed switching
2.5V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate to Source Voltage
Drain Current (DC)
Unit
--30
V
±10
V
Allowable Power Dissipation
ID
IDP
PD
0.15
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
--0.1
A
--0.4
A
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Ordering & Package Information
0.15
3
3LP01M-TL-E
3LP01M-TL-H
Device
Package
Shipping
memo
3LP01M-TL-E
MCP
SC-70,TO-323
3,000
pcs./reel
Pb-Free
3LP01M-TL-H
MCP
SC-70,TO-323
3,000
pcs./reel
Pb-Free
and
Halogen Free
0 to 0.08
1.25
2.1
0.425
2.0
0.2
unit : mm (typ)
7023A-010
0.9
Marking
2
0.65
0.3
LOT No.
XA
0.3
0.425
Packing Type: TL
1
LOT No.
TL
1 : Gate
2 : Source
3 : Drain
Electrical Connection
MCP
3
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
62613 TKIM TC-00002945/71112 TKIM/40908 TIIM TC-00001304/ No.6139-1/6
32406PE MSIM TB-00002153/90100 TSIM TA-2006
3LP01M
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
Conditions
V(BR)DSS
IDSS
IGSS
VGS=±8V, VDS=0V
Forward Transfer Admittance
VGS(off)
| yfs |
VDS= --10V, ID= --100μA
VDS= --10V, ID= --50mA
Static Drain to Source On-State Resistance
RDS(on)1
RDS(on)2
ID= --50mA, VGS= --4V
ID= --30mA, VGS= --2.5V
ID= --1mA, VGS= --1.5V
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
ID= --1mA, VGS=0V
VDS= --30V, VGS=0V
VDS= --10V, f=1MHz
See specified Test Circuit.
VDS= --10V, VGS= --10V, ID= --100mA
Ratings
min
typ
max
--30
V
--0.4
80
--1
μA
±10
μA
--1.4
110
V
mS
8
10.4
Ω
11
15.4
Ω
27
54
Ω
7.5
pF
5.7
pF
1.8
pF
24
ns
55
ns
120
ns
130
ns
1.43
nC
0.18
nC
0.25
IS= --100mA, VGS=0V
Unit
--0.83
nC
--1.2
V
Switching Time Test Circuit
0V
--4V
VDD= --15V
VIN
VIN
PW=10μs
D.C.≤1%
D
ID= --50mA
RL=300Ω
VOUT
G
3LP01M
P.G
50Ω
S
No.6139-2/6
3LP01M
ID -- VDS
VDS= --10V
--0.18
V
.5
--2
--0.16
--2.0V
V
--0.06
--0.12
--0.10
--0.05
--0.08
--0.04
--0.06
--0.03
VGS= --1.5V
--0.02
--0.04
--0.02
--0.01
0
0
0
--0.2
--0.4 --0.6
--0.8
--1.0
--1.2
--1.4
--1.6
Drain to Source Voltage, VDS -- V
--1.8
--2.0
0
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
20
15
--50mA
ID= --30mA
5
--3
--4
--5
--6
--7
--8
Gate to Source Voltage, VGS -- V
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
25°C
10
7
--25°C
5
3
2
1.0
--0.01
2
3
5
7
2
--0.1
Drain Current, ID -- A
12
=
V GS
10
5
--2.
A
50m
= -V, I D
4.0
= -V GS
8
6
4
2
--60
--40
--20
0
20
40
60
80
--25°C
5
3
2
2
3
100
Ambient Temperature, Ta -- °C
120
140
5
7
160
IT00083
2
--0.1
3
IT00080
RDS(on) -- ID
VGS= --1.5V
5
3
2
100
7
5
25°C
Ta=75°C
3
2
--25°C
2
3
5
7
2
--1.0
Drain Current, ID -- mA
Forward Transfer Admittance, | yfs | -- S
A
30m
= -V, I D
7
3
IT00082
| yfs | -- ID
1.0
16
14
25°C
Ta=75°C
10
IT00081
RDS(on) -- Ta
18
2
10
--0.1
3
--4.0
IT00078
3
7
3
--3.5
Drain Current, ID -- A
VGS= --2.5V
Ta=75°C
--3.0
VGS= --4V
IT00079
5
2
--2.5
RDS(on) -- ID
1000
7
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
--10
RDS(on) -- ID
100
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
--9
--2.0
5
1.0
--0.01
0
--2
--1.5
7
25
--1
--1.0
100
Ta=25°C
0
--0.5
Gate to Source Voltage, VGS -- V
IT00077
RDS(on) -- VGS
30
10
25°C
Ta=
--0.14
--6.0
--0.07
75°
C
Drain Current, ID -- A
--0.08
--25
°C
--4
.
--3
.0V
0V
--3.5V
--0.09
ID -- VGS
--0.20
Drain Current, ID -- A
--0.10
VDS= --10V
7
5
3
25°C
2
0.1
5°C
2
Ta= --
75°C
7
5
3
2
0.01
--0.01
2
3
5
7
--0.1
Drain Current, ID -- A
2
3
IT00084
No.6139-3/6
3LP01M
IS -- VSD
3
Switching Time, SW Time -- ns
5
--0.01
--0.5
--0.6
--0.7
--25°C
2
25°C
3
Ta=7
5°C
--0.8
--0.9
--1.0
Diode Forward Voltage, VSD -- V
td(off)
100
7
5
tr
3
td(on)
2
3
2
10
Ciss
Coss
5
3
2
Crss
3
5
7
Drain Current, ID -- A
--0.1
IT00086
VGS -- Qg
VDS= --10V
ID= --0.1A
--9
7
2
--10
5
Ciss, Coss, Crss -- pF
tf
2
f=1MHz
7
--8
--7
--6
--5
--4
--3
--2
--1
1.0
0
0
--10
--5
--15
--20
--25
Drain to Source Voltage, VDS -- V
--30
IT00087
0
0.2
0.4
0.6
0.8
1.0
1.2
Total Gate Charge, Qg -- nC
1.4
1.6
IT00088
PD -- Ta
0.20
Allowable Power Dissipation, PD -- W
3
IT00085
Ciss, Coss, Crss -- VDS
100
5
10
--0.01
--1.1
Gate to Sourse Voltage, VGS -- V
Source Current, IS -- A
7
VDD= --15V
VGS= --4V
7
2
--0.1
SW Time -- ID
1000
VGS=0V
0.15
0.10
0.05
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT02381
No.6139-4/6
3LP01M
Outline Drawing
3LP01M-TL-E, 3LP01M-TL-H
Land Pattern Example
Mass (g) Unit
0.006 mm
* For reference
Unit: mm
2.1
1.0
0.7
0.65 0.65
No.6139-5/6
3LP01M
Note on usage : Since the 3LP01M is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.6139-6/6