Ordering number : ENA0747B 2SK4125 N-Channel Power MOSFET http://onsemi.com 600V, 17A, 610mΩ, TO-3P-3L Features • • • ON-resistance RDS(on)=0.47Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Unit 600 PW≤10μs, duty cycle≤1% V ±30 V 17 A 52 A 2.5 W Allowable Power Dissipation PD 170 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *2 EAS IAV 78.8 mJ Avalanche Current *3 Tc=25°C (Our ideal heat dissipation condition)*1 17 A *1 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *2 VDD=50V, L=500μH, IAV=17A (Fig.1) *3 L≤500μH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7539-002 • Package : TO-3P-3L • JEITA, JEDEC : SC-65, TO-247, SOT-199 • Minimum Packing Quantity : 30 pcs./magazine 2SK4125-1E 4.8 15.6 5.0 1.5 Electrical Connection 13.6 16.76 10.0 19.9 2 K4125 LOT No. 3.5 18.4 Marking 7.0 3.2 1 20.0 2.0 3.0 1.0 2 5.45 3 3 1.4 1 0.6 1 : Gate 2 : Drain 3 : Source 5.45 TO-3P-3L Semiconductor Components Industries, LLC, 2013 July, 2013 62012 TKIM/D0507 TIIM TC-00001053/51607QB TIIM TC-00000701 No. A0747-1/7 2SK4125 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=±30V, VDS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on) ID=7A, VGS=10V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr Turn-OFF Delay Time td(off) Fall Time Total Gate Charge tf Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Ratings Conditions min Unit max 600 VDS=10V, ID=1mA 3 VDS=10V, ID=8.5A 4.5 V 100 μA ±100 nA 5 V 9 S 0.47 0.61 Ω 1200 pF 220 pF 50 pF 26.5 ns 82 ns 145 ns VDS=30V, f=1MHz See Fig.2 VDS=200V, VGS=10V, ID=17A 52 ns 46 nC 8.3 nC 26.7 IS=17A, VGS=0V Fig.1 Avalanche Resistance Test Circuit 1.3 V Fig.2 Switching Time Test Circuit 10V 0V L VIN VDD=200V ID=8.5A RL=23.5Ω VIN D PW=10μs D.C.≤0.5% 2SK4125 VDD 50Ω nC 1.0 ≥50Ω RG 10V 0V typ VOUT G 2SK4125 P.G RGS=50Ω S Ordering Information Device 2SK4125-1E Package Shipping memo TO-3P-3L 30pcs./magazine Pb Free ID -- VDS 35 Tc=25°C VDS=20V 10V 30 Tc= --25°C 35 8V 15V Drain Current, ID -- A Drain Current, ID -- A ID -- VGS 40 25 20 15 10 6V 5 30 25°C 25 75°C 20 15 10 5 VGS=5V 0 0 0 5 10 15 20 Drain-to-Source Voltage, VDS -- V 25 30 IT11753 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 18 20 IT11754 No. A0747-2/7 2SK4125 RDS(on) -- VGS 2.0 1.6 1.4 1.2 1.0 Tc=75°C 25°C 0.4 --25°C 0.2 3 5 7 9 11 13 5 = Tc --2 0.2 --25 °C 75 2 1.0 7 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 5 75 100 125 150 IT11756 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 0.01 0.2 5 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 1.4 IT11758 Ciss, Coss, Crss -- VDS 10000 7 5 VDD=200V VGS=10V 7 50 VGS=0V IT11757 SW Time -- ID 1000 3 25 IS -- VSD 3 2 5 3 0.1 0 3 2 C 5° 3 0.4 5 °C 25 7 V Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 10 A, =1 GS =7 ID 0.6 0 --50 15 VDS=10V 2 0V 0.8 IT11755 | yfs | -- ID 3 1.0 --25°C 0.6 1.2 Tc=7 5°C 25°C 0.8 Gate-to-Source Voltage, VGS -- V f=1MHz 3 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.8 0 RDS(on) -- Tc 1.4 ID=7A td (off) 2 100 7 tf tr 5 td(on) 3 2 Ciss 1000 7 5 Coss 3 2 100 7 5 Crss 3 2 2 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 100 7 5 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 0 10 20 30 Total Gate Charge, Qg -- nC 0 5 40 50 IT12416 10 15 20 25 30 35 40 45 Drain-to-Source Voltage, VDS -- V VDS=200V ID=17A 9 Gate-to-Source Voltage, VGS -- V 10 5 IT11759 VGS -- Qg 10 3 ASO IDP=52A(PW≤10μs) 1m ID=17A 1.0 7 5 3 2 0.1 7 5 3 2 10 10 μs 0μ s s 1 10 0ms 0m DC s op era tio n 10 7 5 3 2 50 IT11760 Operation in this area is limited by RDS(on). Tc=25°C Single pulse 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V 5 71000 IT16834 No. A0747-3/7 2SK4125 PD -- Ta 2.5 2.0 1.5 1.0 0.5 180 170 160 140 120 100 80 60 40 20 0 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT12240 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT12241 EAS -- Ta 120 Avalanche Energy derating factor -- % PD -- Tc 200 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 3.0 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A0747-4/7 2SK4125 Magazine Specification 2SK4125-1E No. A0747-5/7 2SK4125 Outline Drawing 2SK4125-1E Mass (g) Unit 1.8 mm * For reference No. A0747-6/7 2SK4125 Note on usage : Since the 2SK4125 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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