Ordering number : ENA1908B BMS3004 P-Channel Power MOSFET http://onsemi.com –75V, –68A, 8.5mΩ, TO-220F-3SG Features • • • ON-resistance RDS(on)1=6.5mΩ (typ.) Input capacitance Ciss=13400pF (typ.) 4V drive TO-220F-3SG Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol Conditions Ratings VDSS VGSS ID IDP PW≤10μs, duty cycle≤1% Unit --75 V ±20 V --68 A --272 A 2.0 W Allowable Power Dissipation PD 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 380 mJ --54 A Avalanche Current *2 Tc=25°C Note : *1 VDD=--48V, L=100μH, IAV=--54A (Fig.1) *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=--1mA, VGS=0V VDS=--75V, VGS=0V Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | VDS=--10V, ID=--1mA VDS=--10V, ID=--34A Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 ID=--34A, VGS=--10V ID=--34A, VGS=--4V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Ratings min typ max --75 V --1.2 --10 μA ±10 μA --2.6 120 V S 6.5 8.5 mΩ 8.3 11.4 mΩ 13400 VDS=--20V, f=1MHz Unit pF 1000 pF Crss 740 pF td(on) tr 70 ns 245 ns See Fig.2 Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=--68A, VGS=0V Reverse Recovery Time trr See Fig.3 146 ns Reverse Recovery Charge Qrr IS=--68A, VGS=0V, di/dt=--100A/μs 470 nC VDS=--48V, VGS=--10V, ID=--68A 1400 ns 650 ns 300 nC 30 nC 70 --0.9 nC --1.5 V ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2013 November, 2013 N0613 TKIM/41112QA TKIM TC-00002740/10511QA TKIM TC-00002547 No. A1908-1/5 BMS3004 V --6 V --4 --120 --80 --60 --40 --100 --80 --60 Tc=7 5°C Drain Current, ID -- A --1 --40 --0.4 --0.6 --0.8 --1.0 --1.2 Drain to Source Voltage, VDS -- V --1.4 16 14 12 10 Tc=75°C 8 25°C 6 --25°C 4 2 --1 --2 --3 --4 --5 --6 --7 --8 Gate to Source Voltage, VGS -- V --9 3 100 7 5 °C 25 3 °C -25 =c T °C 75 2 10 7 5 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 3 2 8 6 4 2 --25 0 25 50 75 100 125 150 IT16255 IS -- VSD VGS=0V Single pulse --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V --1.4 IT16257 Ciss, Coss, Crss -- VDS 100000 7 5 Ciss, Coss, Crss -- pF tr 100 7 5 --5.0 IT16253 f=1MHz Ciss 10000 7 5 tf 3 2 --4.5 A --34 I D= , V 4A = --4 = --3 , ID VGS V 0 = --1 VGS 10 3 2 td(off) 1000 7 5 td(on) 3 3 2 Coss 1000 7 5 Crss 3 2 2 10 --0.1 12 5 7 --100 VDD= --48V VGS= --10V --4.0 14 IT16256 SW Time -- ID 10000 7 5 --3.5 16 --0.1 7 5 3 2 --0.01 2 --3.0 Single pulse --1000 7 5 3 2 3 1.0 --0.1 --2.5 Case Temperature, Tc -- °C Source Current, IS -- A 2 --2.0 18 0 --50 --10 VDS= --10V Single pulse --1.5 RDS(on) -- Tc IT16501 | yfs | -- ID 1000 7 5 --1.0 20 Static Drain to Source On-State Resistance, RDS(on) -- mΩ ID= --34A Single pulse 18 --0.5 Gate to Source Voltage, VGS -- V RDS(on) -- VGS 20 0 0 0 IT16252 °C 25°C --0.2 Tc= 75 0 Static Drain to Source On-State Resistance, RDS(on) -- mΩ °C 0 0 Forward Transfer Admittance, | yfs | -- S --25 --20 --20 Switching Time, SW Time -- ns 25 °C VGS= --3V --25°C Drain Current, ID -- A --100 25° C VDS= --10V Single pulse 75°C ID -- VGS --140 0V --120 --8 V Tc=25°C Single pulse Tc= --25 °C ID -- VDS --140 100 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT16258 0 --5 --10 --15 --20 --25 Drain to Source Voltage, VDS -- V --30 IT16259 No. A1908-2/5 BMS3004 VGS -- Qg --10 --8 Drain Current, ID -- A Gate to Source Voltage, VGS -- V --9 --6 --5 --4 --3 0 50 100 150 200 250 Total Gate Charge, Qg -- nC 2 3 Allowable Power Dissipation, PD -- W 1.5 1.0 0.5 0 0μ s 5 7 --1.0 2 3 5 7 --10 2 Drain to Source Voltage, VDS -- V 3 5 7 --100 IT16261 PD -- Tc 45 2.0 1m s 10 m 10 s 0m DC s op era tio n Tc=25°C Single pulse IT16260 PD -- Ta 2.5 Operation in this area is limited by RDS(on). --0.1 --0.1 300 10 μs 10 ID= --68A --10 7 5 3 2 --1.0 7 5 3 2 --2 0 Allowable Power Dissipation, PD -- W IDP= --272A (PW≤10μs) --100 7 5 3 2 --7 --1 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16249 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT16250 EAS -- Ta 120 Avalanche Energy derating factor -- % ASO --1000 7 5 3 2 VDS= --48V ID= --68A 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16251 No. A1908-3/5 BMS3004 Package Dimensions BMS3004-1E TO-220F-3SG CASE ISSUE O Unit : mm 1: Gate 2: Drain 3: Source Ordering & Package Information Marking Device Package Shipping memo BMS3004-1E TO-220F-3SG SC-67 50 pcs./tube Pb-Free Electrical Connection 2 MS3004 1 LOT No. 3 No. A1908-4/5 BMS3004 Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit VDD= -48V VIN D L ≥50Ω RG G ID= -34A RL=1.4Ω VIN BMS3004 0V -10V 0V -10V S 50Ω D VOUT PW=10μs D.C.≤1% G BMS3004 P.G 50Ω S Fig.3 Reverse Recovery Time Test Circuit BMS3004 D L G S VDD Driver MOSFET Note on usage : Since the BMS3004 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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