ROHM 2SC5865TLR

High voltage discharge, High speed switching,
Low Noise (60V, 1A)
2SC5865
Features
1) High speed switching. ( Tf : Typ. : 50ns at IC = 1.0A)
2) Low saturation voltage, typically.
(Typ. : 200mV at IC = 500mA, IB = 50mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Low Noise.
5) Complements the 2SA2092.
Dimensions (Unit : mm)
TSMT3
1.0MAX
2.9
0.85
0.4
0.7
1.6
2.8
(3)
0.3~0.6
0~0.1
(2)
(1)
0.95 0.95
(1) Base
(2) Emitter
(3) Collector
Applications
High speed switching, Low noise
1.9
0.16
Each lead has same dimensions
Abbreviated symbol : VU
Structure
NPN Silicon epitaxial planar transistor
Packaging specifications
Package
Type
Taping
TL
Code
Basic ordering unit (pieces)
3000
2SC5865
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
6
V
IC
1.0
A
ICP
2.0
A
PC
500
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1
mW ∗2
Tj
150
°C
Tstg
−55 to +150
°C
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land
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2011.03 - Rev.A
2SC5865
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-emitter breakdown voltage
BVCEO
60
−
−
V
IC=1mA
Collector-base breakdown voltage
BVCBO
60
−
−
V
IC=100μA
Emitter-base breakdown voltage
BVEBO
6
−
−
V
IE=100μA
ICBO
−
−
1.0
μA
VCB=40V
Collector cut-off current
IEBO
−
−
1.0
μA
VEB=4V
VCE(sat)
−
200
500
mV
IC=500mA, IB=50mA
DC current gain
hFE
120
−
390
−
VCE=2V, IC=100mA
Transistor frequency
fT
−
250
−
MHz
Collector output capacitance
Cob
−
10
−
pF
VCB=10V, IE=0mA, f=1MHz
Turn-on time
ton
−
50
−
ns
Storage time
tstg
−
130
−
ns
tf
−
50
−
ns
IC=1A,
IB1=100mA
IB2= −100mA
VCC 25V ∗2
Emitter cut-off current
Collector-emitter saturatioin voltage
Fall time
VCE=10V, IE= −100mA, f=10MHz∗1
∗1 Non repetitive pulse
∗2 See switching characteristics measurement circuits
hFE RANK
Q
R
120-270
180-390
Electrical characteristic curves
1000
400μA
350μA
120
300μA
250μA
80
200μA
150μA
Tstg
100
Tf
Ton
100μA
40
Ta= −40°C
100
Ta=25°C
10
50μA
0
1
2
3
4
5
10
0.01
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Typical output characteristics
1000
COLLECTOR SATURATION
VOLTAGE : VCE(sat)(V)
VCE=5V
VCE=2V
1
VCE=3V
10
1
0.001
10
0.01
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain
vs. collector current ( ΙΙ )
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c 2011 ROHM Co., Ltd. All rights reserved.
○
10
Fig.2 Switching Time
Fig.3 DC current gain
vs. collector current ( Ι )
10
IC/IB=10/1
1
Ta=125°C
0.1
0.01
0.001
1
COLLECTOR CURRENT : IC (A)
Ta=25°C
Ta=25°C
1
IC/IB=100/1
0.1
IC/IB=20/1
Ta= −40°C
1
0.001
0.1
COLLECTOR CURRENT : IC (A)
10
Ta=25°C
100
0.1
COLLECTOR SATURATION
VOLTAGE : VCE (sat)(V)
0μA
0
DC CURRENT GAIN : hFE
VCE=2V
Ta=125°C
DC CURRENT GAIN : hFE
450μA
1000
Ta=25°C
VCC=25V
IC/IB=10/1
IB=500μA
160
SWITCHING TIME (ns)
COLLECTOR CURRENT : IC (mA)
200
0.01
0.1
IC/IB=10/1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage
vs. collector current ( Ι )
2/3
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
2011.03 - Rev.A
Data Sheet
1000
IC/IB=10/1
TRANSITION FREQUENCY : fT (MHz)
BASE EMITTER SATURATION
VOLTAGE : VBE(sat) (V)
10
Ta= −40°C
1
Ta=25°C
Ta=125°C
0.1
0.001
Ta=25°C
VCE=10V
100
10
1
0.001
0.01
0.1
1
0.01
10
0.1
1
10
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
2SC5865
10
1
0.1
1
10
100
Fig.9 Collector output capacitance
Fig.8 Transition frequency
Fig.7 Base-emitter saturation voltage
vs. collector current
Ta=25°C
f=1MHz
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER CURRENT : IE (A)
COLLECTOR CURRENT : IC (A)
100
COLLECTOR CURRENT : IC (A)
10
1
Ta=125°C
Ta=25°C
0.1
Ta=−40°C
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.10 Ground emitter propagation
characteristics
Switching characteristics measurement circuits
RL=25Ω
VIN
IB1
IC
VCC 25V
PW
IB2
PW 50 S
Duty cycle 1%
IB1
IB2
BASE CURRENT
WAVEFORM
90%
IC
COLLECTOR CURRENT
WAVEFORM
10%
Ton
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Tstg Tf
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2011.03 - Rev.A
Notice
Notes
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R1120A