ROHM 2SA2090

Medium power transistor (60V, 0.5A)
2SA2090
Dimensions (Unit : mm)
Features
1) High speed switching. (Tf : Typ. : 35ns at IC = 500mA)
2) Low saturation voltage, typically.
(Typ. : 150mV at IC = 100mA, IB = 10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5868.
TSMT3
(1) Base
(2) Emitter
(3) Collector
Applications
High speed switching, Low noise
Each lead has same dimensioins
Abbreviated symbol : VM
Structure
PNP Silicon epitaxial planar
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
Taping
TL
3000
2SA2090
Absolute maximum ratings (Ta=25C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−60
V
Emitter-base voltage
VEBO
−6
V
Parameter
IC
−0.5
A
ICP
−1.0
A
Power dissipation
PC
500
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Collector current
∗1
∗2
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land.
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2011.03 - Rev.B
2SA2090
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
−60
−
−
V
IC= −1mA
Collector-base breakdown voltage
BVCBO
−60
−
−
V
IC= −100mA
BVEBO
−6
−
−
V
IE= −100μA
ICBO
−
−
−1.0
μA
VCB= −60V
IEBO
−
−
−1.0
μA
VEB= −4V
VCE(sat)
−
−150
−300
mV
IC= −100mA, IB= −10mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Conditions
DC current gain
hFE
120
−
270
−
Transition frequency
fT
−
400
−
MHz
Collector output capacitance
Cob
−
10
−
pF
VCB= −10V, IE=0mA, f=1MHz
Turn-on time
Ton
−
35
−
ns
Storage time
Tstg
−
100
−
ns
Tf
−
60
−
ns
IC= −500mA,
IB1= −50mA
IB2=50mA
VCC ∼− −25V
Fall time
VCE= −2V, IC= −50mA
VCE= −10V, IE=100mA, f=10MHz
∗1
∗1
∗1 Measured using pulse current
hFE RANK
Q
120-270
Electrical characteristic curves
1000
400μA
IB=450μA
VCE=2V
Ta=100°C
300μA
250μA
60
200μA
150μA
40
100μA
DC CURRENT GAIN : hFE
80
Tstg
100
Tf
Ton
20
Ta=−40°C
100
Ta=25°C
50μA
0
1
2
3
4
5
10
0.01
10
COLLECTOR SATURATION
VOLTAGE : VCE(sat)(V)
Ta=25°C
VCE=2V
VCE=3V
100
0.001
0.01
0.1
1
125°C
0.1
25°C
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector
current (ΙΙ)
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c 2011 ROHM Co., Ltd. All rights reserved.
○
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage
vs. collector current ( Ι )
2/3
1
10
IC/IB=10/1
1
0.01
0.001
0.1
Fig.3 DC current gain vs. collector
current ( Ι )
Ta=25°C
1
IC/IB=100/1
0.1
−40°C
10
0.01
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
Fig.1 Typical output characteristics
VCE=5V
10
0.001
1
COLLECTOR CURRENT : IC (A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
1000
0.1
COLLECTOR SATURATION
VOLTAGE : VCE (sat)(V)
0μA
0
DC CURRENT GAIN : hFE
1000
Ta=25°C
VCC=25V
350μA
SWITCHING TIME (ns)
COLLECTOR CURRENT : IC (mA)
100
0.01
0.001
IC/IB=20/1
IC/IB=10/1
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation voltage
vs. collector current (ΙΙ)
2011.03 - Rev.B
Data Sheet
−40°C
1
25°C
125°C
0.1
0.001
0.01
0.1
Ta=25°C
VCE=10V
100
10
0.001
1
0.01
0.1
1
10
100
Ta=25°C
f=1MHz
10
1
0.1
1
10
100
COLLECTOR CURRENT : IC (A)
EMITTER CURRENT : IE (A)
BASE TO COLLECTOR VOLTAGE : VCB (V)
Fig.7 Base-emitter saturation voltage
vs. collector current
Fig.8 Transition frequency
Fig.9 Collector output capacitance
1
COLLECTOR CURRENT : IC (A)
1000
IC/IB=10/1
TRANSITION FREQUENCY : FT (MHz)
BASE EMITTER SATURATION
VOLTAGE : VBE(sat) (V)
10
COLLECTOR OUTPUT CAPACITANCE : COB (pF)
2SA2090
VCE=2V
125°C
0.1
25°C
−40°C
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.10 Ground emitter propagation
characteristics
Switching characteristics measurement circuits
RL=50Ω
VIN
IB1
IC
VCC 25V
PW
IB2
PW 50 S
Duty cycle 1%
IB1
IB2
Base current
waveform
90%
IC
Collector current
waveform
10%
Ton
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Tstg Tf
3/3
2011.03 - Rev.B
Notice
Notes
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R1120A