ROHM BCX71H_11

PNP small signal transistor
BCX71H
Dimensions (Unit : mm)
Features
1) Ideal for switching and AF amplifier applications.
2) Complements the BCX70.
2.9
0.4
(3)
Type
1.3
2.4
Packaging specifications
Package
0.95
0.45
0.2Min.
BCX71H
Taping
Code
T116
Basic ordering unit (pieces)
3000
(2)
(1)
0.95 0.95
0.15
1.9
(1)Emitter
Each lead has same dimensions
(2)Base
BCX70H
(3)Collector
Abbreviated symbol : GBH
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−45
V
Collector-emitter voltage
VCEO
−45
V
Emitter-base voltage
VEBO
−5
V
IC
−0.2
A
0.2
W
Collector current
Collector power dissipation
PC
0.35
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to 150
°C
∗
∗
Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Collector-emitter breakdown voltage BVCEO
−45
−
−
V
IC= −2mA
BVEBO
−5
−
−
V
IC= −10μA
Collector-emitter cutoff current
ICES
−
−
−0.1
μA
VCE= −45V
Emitter-base cutoff current
IEBO
−
−
−0.1
μA
VEB= −4V
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Unit
Conditions
VCE(sat)1
−
−
−0.25
V
IC/IB= −10mA/ −0.25mA
VCE(sat)2
−
−
−0.55
V
IC/IB= −50mA/ −1.25mA
VBE(sat)1
−
−
−0.85
V
IC/IB= −10mA/ −0.25mA
VBE(sat)2
−
−
−1.05
V
IC/IB= −50mA/ −1.25mA
VBE(on)
−0.6
−
−0.75
V
VCE= −5V, IC= −2mA
140
−
310
80
−
−
−
180
−
DC current transfer ratio
hFE
Transition frequency
fT
−
MHz
VCE= −5V, IC= −2mA
VCE= −5V, IC= −50mA
VCE= −5V, IE= −10mA, f=100MHz
Collector output capacitance
Cob
−
−
6
pF
VCB= −10V, f=1MHz
Noise figure
NF
−
−
6
dB
VCE= −5V, IC= −200μA, f=1kHz,Rg=2kΩ
Collector-base cutoff current
ICBO
−
−
−20
μA
VCB= −45V, Ta=150°C
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c 2011 ROHM Co., Ltd. All rights reserved.
○
1/2
2011.11 - Rev.B
Data Sheet
BCX71H
Electrical characteristics
-100
COLLECTOR CURRENT : IC (mA)
Ta=125ºC
75ºC
25ºC
-55ºC
-1
-80
IB=-350uA
IB=-300uA
-60
IB=-250uA
IB=-200uA
-40
IB=-150uA
IB=-100uA
-20
VCE=-5V
-3V
-1V
IB=0A
-0.2
-0.4
-0.6
-0.8
-1
0
BASE TO EMITTER VOLTAGE : VBE (V)
-1
-2
100
Ta=125ºC
75ºC
25ºC
-55ºC
10
-1
-10
-100
-1000
COLLECTOR CURRENT : IC (mA)
-4
-5
-6
-7
-10
IC/IB=40/1
20/1
10/1
-0.1
-1
-10
-100
-1000
COLLECTOR CURRENT : IC (mA)
1000
TRANSITION FREQUENCY : fT (MHz)
IC/IB=40/1
Ta=-55ºC
25ºC
75ºC
125ºC
-1
-0.1
-100
COLLECTOR CURRENT : IC (mA)
1
IC/IB=40/1
Ta=125ºC
75ºC
25ºC
-55ºC
0.1
0.01
-0.1
-1
Fig7. Base Saturation Voltage
vs. Collector Current
Ta=25˚C
VCE= −12V
200
100
50
1
2
5
10
50
Fig.8 Gain bandwidth product vs.
emitter current
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c 2011 ROHM Co., Ltd. All rights reserved.
○
20
EMITTER CURRENT : IE (mA)
2/2
-10
-100
-1000
COLLECTOR CURRENT : IC (mA)
Fig6. Collector Saturation Voltage
vs. Collector Current (II)
500
0.5
-1000
Fig3. DC Current Gain vs.
Collector Current (I)
Ta=25ºC
-0.01
-0.1
-100
COLLECTOR CURRENT : IC (mA)
Fig5. Collector Saturation Voltage
vs. Collector Current (I)
-10
-10
-1
-9 -10
-1
Fig4. DC Current Gain vs.
Collector Current (II)
-1
-8
Fig2. Grounded Emitter Output
Characteristics
COLLECTOR SATURATION VOLTAGE : VCE(sat)
(V)
VCE=-5V
-3
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig1. Grounded Emitter Propagation
Characteristics
1000
10
0
-1.2
COLLECTOR SATURATION VOLTAGE : VCE(sat)
(V)
0
DC CURRENT GAIN : hFE
100
IB=-50uA
-0.1
BASE SATURATION VOLTAGE : VBE(sat)
(V)
Ta=25ºC
100
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
COLLECTOR CURRENT : IC (mA)
-10
1000
IB=-500uA
-450uA
-400uA
Ta=25ºC
VCE=-5V
DC CURRENT GAIN : hFE
-100
20
Ta=25˚C
f=1MHz
IE=0A
IC=0A
Cib
10
Co
b
5
2
−0.5
−1
−2
−5
−10
−20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9
Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
2011.11 - Rev.B
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A