EML11 / UML11N Transistors General purpose transistor (isolated transistor and diode) EML11 / UML11N 2SA1774 and a RB521S-30 are housed independently in a EMT5 or UMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver EMT5 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Tr2: Small Signal Transistor Di1: Low VF 2) Small package (5) (4) 1.6 1.2 1pin mark (1) (2) (3) 0.13 0.22 Each lead has same dimensions zStructure Silicon epitaxial planar transistor Schottky barrier diode Abbreviated symbol : L11 ROHM : EMT5 UMT5 2.0 1.3 0.9 0.65 0.65 zEquivalent circuit (EML11 / UML11N) (4) 2.1 (5) (4) 1.25 (5) 0.7 (1) (2) (3) 1pin mark 0.2 0.15 0.1Min. The following characteristics apply to both Di1 and Tr2. Tr2 Di1 Each lead has same dimensions Abbreviated symbol : L11 (1) (2) ROHM : UMT5 EIAJ : SC-88A (3) zPackaging specifications Type EML11 UML11N Package EMT5 UMT5 Marking Code L11 L11 T2R TR Basic ordering unit(pieces) 8000 3000 Rev.B 1/4 EML11 / UML11N Transistors zAbsolute maximum ratings (Ta=25°C) Di1 Parameter Symbol IO Average rectified forward current IFSM Forward current surge peak (60HZ, 1∞) VR Reverse voltage (DC) Tj Junction temperature Limits 200 1 30 125 Unit mA A V °C Tr2 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Limits −60 −50 −6 −150 120 150 Symbol VCBO VCEO VEBO IC PD Tj Unit V V V mA mW ∗ °C ∗ Each terminal mounted on a recommended. Di1 / DTr2 Parameter Power dissipation Storage temperature Limits Symbol 150 Pd −55 to +125 Tstg Unit mW ∗ °C ∗ Each terminal mounted on a recommended. zElectrical characteristics (Ta=25°C) Di1 Parameter Forward voltage Reverse current Symbol Min. Typ. Max. Unit VF IR − − 0.40 4.0 0.50 30 V µA Conditions IF=200mA VR=10V Tr2 Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −60 − − V Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA Emitter-base breakdown voltage BVEBO −6 − − V IE=−50µA Collector cutoff current ICBO − − −100 nA VCB=−60V Emitter cutoff current IEBO − − −100 nA VEB=−6V VCE(sat) − − −500 mV IC/IB=−50mA/−5mA hFE 180 − 390 − VCE=−6V, IC=−1mA fT − 140 − MHz Cob − 4.0 5.0 pF Parameter Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Conditions IC=−50µA VCE=−12V, IE=2mA, f=100MHz VCB=−12V, IE=0A, f=1MHz Rev.B 2/4 EML11 / UML11N Transistors zElectrical characteristic curves Di1 Ta=125℃ f=1MHz 10 Ta=75℃ 1 Ta=-25℃ 0.1 Ta=25℃ 0.01 Ta=75℃ 1000 100 Ta=25℃ 10 10 Ta=-25℃ 1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10000 Ta=125℃ 100 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 100 100000 1000 0.1 0.01 0.001 0 100 200 300 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 500 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1 30 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 Tr2 -5 -2 -1 -0.5 -0.2 -24.5 -21.0 -6 -17.5 -14.0 -4 -10.5 -7.0 -2 -0.4 -0.8 -1.2 -1.6 Ta = 100°C 25°C 100 50 -40°C 200 100 50 VCE = -6V -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) -250 -60 -200 -150 -40 -100 -20 -50µA IB = 0 0 -2.0 500 200 -500 -450 -400 -350 -300 -80 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current ( ΙΙ ) -1 -2 -3 -4 -5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( ΙΙ ) Fig.2 Grounded emitter output characteristics ( Ι ) VCE = -5V -3V -1V Ta = 25°C -3.5µA COLLECTOR TO EMITTER VOLTAGE : VCE (V) DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE -28.0 -8 0 Fig.1 Grounded emitter propagation characteristics Ta = 25°C -100 -31.5 IB = 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V) 500 -35.0 Ta = 25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -10 -0.1 -10 COLLECTOR CURRENT : IC (mA) VCE = −6V Ta = 100°C 25°C -20 −40°C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) -50 -1 Ta = 25°C -0.5 -0.2 IC/IB = 50 20 -0.1 10 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι ) Rev.B 3/4 EML11 / UML11N lC/lB = 10 -0.5 -0.2 Ta = 100°C 25°C -40°C -0.1 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) Ta = 25°C VCE = -12V 500 200 100 50 0.5 1 2 5 10 20 50 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 1000 -1 TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors 20 Ta = 25°C f = 1MHz IE = 0A IC = 0A Cib 10 Co b 5 2 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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