EMX1 / UMX1N / IMX1 Transistors General purpose transistors (dual transistors) EMX1 / UMX1N / IMX1 !Features 1) Two 2SC2412K chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. !External dimensions (Units : mm) (3) 0.22 (4) (5) (2) (6) 0.5 0.5 1.0 1.6 EMX1 (1) 0.5 0.13 1.2 1.6 Each lead has same dimensions ROHM : EMT6 2.0 1.3 (3) (2) (1) 1.25 0.65 (6) (5) 0.2 (4) UMX1N !Structure Epitaxial planar type NPN silicon transistor 0.65 Abbreviated symbol : X1 (3) (2) 0.9 Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 IMX1 (4) (1) (5) Tr1 (6) Abbreviated symbol : X1 IMX1 Tr1 Tr2 0to0.1 0.1Min. !Equivalent circuit EMX1 / UMX1N 0.7 0.15 2.1 (2) (1) (2) (3) (6) (1) (3) 0.95 0.95 1.9 2.9 (5) (4) (4) (5) 0.3 (6) Tr2 1.6 0.3to0.6 0to0.1 1.1 The following characteristics apply to both Tr1 and Tr2. 0.8 0.15 2.8 Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 !Absolute maximum ratings (Ta = 25°C) Abbreviated symbol : X1 Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current IC 150 mA EMX1, UMX1N Power dissipation IMX1 PC Parameter 150 (TOTAL) mW 300 (TOTAL) Junction temperature Tj 150 ˚C Storage temperature Tstg −55∼+150 ˚C ∗1 ∗2 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. 1/3 EMX1 / UMX1N / IMX1 Transistors !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 60 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 7 − − V IE=50µA Collector cutoff current ICBO − − 0.1 µA VCB=60V Emitter cutoff current IEBO − − 0.1 µA VEB=7V VCE (sat) − − 0.4 V IC/IB=50mA/5mA hFE 120 − 560 − VCE=6V, IC=1mA fT − 180 − Cob − 2 3.5 Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance MHz VCE=12V, IE=−2mA, f=100MHz PF ∗ VCB=12V, IE=0A, f=1MHz !Packaging specifications Package Type Taping Code T2R TN T110 Basic ordering unit (pieces) 8000 3000 3000 EMX1 UMX1N IMX1 !Electrical characteristic curves 10 2 1 25˚C −55˚C 5 0.5 0.2 0.50mA mA 0.45mA 0.40 0.35mA Ta=25˚C 80 0.30mA 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0.05mA IB=0A 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics ( I ) 10 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 20 0.1 0 100 VCE=6V Ta=100˚C COLLECTOR CURRENT : IC (mA) 50 30µA Ta=25˚C 27µA 8 24µA 21µA 18µA 6 15µA 12µA 4 9µA 6µA 2 3µA 0 0 IB=0A 4 8 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( II ) 2/3 EMX1 / UMX1N / IMX1 500 Ta=25˚C 50 −55˚C 100 50 20 20 0.5 1 2 5 10 20 10 0.2 50 100 200 0.5 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) TRANSITION FREQUENCY : fT (MHz) Fig.7 Collector-emitter saturation voltage vs. collector current ( I ) Ta=25˚C VCE=6V 500 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) Fig.10 Gain bandwidth product vs. emitter current COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) IC/IB=50 20 10 0.1 10 20 50 100 200 0.5 0.2 0.1 IC/IB=50 0.05 IC/IB=10 Ta=100˚C 25˚C −55˚C 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) 10 0.02 0.01 0.2 20 Ta=25˚C f=1MHz IE=0A IC=0A Cib 5 2 Co b 1 0.2 0.5 1 2 5 10 20 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) 0.5 IC/IB=50 Ta=100˚C 25˚C −55˚C 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) Fig.9 Collector-emitter saturation voltage vs. collector current ( III ) Fig.8 Collector-emitter saturation voltage vs. collector current ( II ) 10 20 Fig.6 Collector-emitter saturation voltage vs. collector current 0.2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 0.2 5 Ta=25˚C 0.5 Fig.5 DC current gain vs. collector current ( II ) Fig.4 DC current gain vs. collector current ( I ) Ta=25˚C 2 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 0.5 1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 100 25˚C 200 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.11 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps) VCE=5V 3V 1V 200 10 0.2 VCE=5V Ta=100˚C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 500 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Transistors Ta=25˚C f=32MHZ VCB=6V 200 100 50 20 10 −0.2 −0.5 −1 −2 −5 −10 EMITTER CURRENT : IE (mA) Fig.12 Base-collector time constant vs. emitter current 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0