QSL10 Transistors General purpose transistor (isolated transistor and diode) QSL10 A 2SD2674 and a RB461F are housed independently in a TSMT5 package. zApplications DC / DC converter Motor driver zExternal dimensions (Unit : mm) QSL10 ROHM : TSMT5 zStructure Silicon epitaxial planar transistor Schottky barrier diode (5) 0.95 0.95 1.9 2.9 0.85 0 to 0.1 0.3 to 0.6 0.7 0.16 (3) (4) (2) zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package (1) 0.4 2.8 1.6 Each lead has same dimensions Abbreviated symbol : L10 zEquivalent circuit (5) (4) Di2 Tr1 (1) (2) (3) zPackaging specifications Type QSL10 Package TSMT5 Marking Code L10 Basic ordering unit(pieces) 3000 TR Rev.A 1/4 QSL10 Transistors zAbsolute maximum ratings (Ta=25°C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol Limits VCBO 15 VCEO 12 VEBO 6 IC 1.5 ICP 3 Pc 0.9 Tj 150 Tstg −40 to +125 Unit V V V A ∗1 A W / ELEMENT ∗2 °C °C ∗1 Single pulse, Pw=1ms ∗2 Mounted on a 25mm+ 25mm+ t0.8mm ceramic substrate Di2 Parameter Symbol Limits 25 VRM Peak reverse voltage VR 20 Reverse voltage (DC) 700 IF Average rectified forward current 3 Forward current surge peak (60HZ, 1∞) IFSM 0.7 PD Power dissipation 125 Tj Junction temperature Tstg Range of storage temperature −40 to +125 Unit V V mA A W / ELEMENT °C °C ∗ + + ∗ Mounted on a 25mm 25mm t0.8mm ceramic substrate Tr1&Di2 Parameter Symbol Total power disipation PD Limits 0.5 1.25 Unit W / ELEMENT ∗1 W / ELEMENT ∗2 + + ∗1 Each terminal mounted on a recommended land. ∗2 Mounted on a 25mm 25mm t0.8mm ceramic substrate. zElectrical characteristics (Ta=25°C) Tr1 Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 15 − − V IC=10µA Collector-emitter breakdown voltage BVCEO 12 − − V IC=1mA Emitter-base breakdown voltage BVEBO 6 − − V IE=10µA ICBO − − 100 nA VCB=15V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance IEBO − − 100 nA VEB=6V VCE(sat) − 85 200 mV IC/IB=500mA/25mA hFE 270 − 680 − VCE/IC=2V/200mA fT − 400 − Cob − 12 − ∗ MHz VCE=2V, IE= −200mA, f=100MHz ∗ VCB=10V, IE=0A, f=1MHz pF ∗ Pulsed Di2 Symbol Min. Typ. Max. Unit Reverse current VF IR − − 450 − 490 200 mV µA IF=700mA VR=20V Reverse recovery fime trr − 9 − ns IF=IR=100mA, Irr=0.1IR Parameter Forward voltage Conditions Rev.A 2/4 QSL10 Transistors zElectrical characteristic curves BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1000 Ta=25°C Ta=−40°C 100 VCE=2V Pulsed 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) 1 Ta=25°C 0.1 Ta=−40°C 0.01 0.001 0 0.5 1.0 Ta=25°C Ta=−40°C VCE(sat) 0.01 0.001 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Ta=25°C VCE=2V 0.1 IC/IB=50/1 0.01 IC/IB=20/1 IC/IB=10/1 0.001 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.3 Collector-emitter saturation voltage vs. collector current Ta=25°C VCE=2V f=100MHz 100 VCE=2V Ta=25°C Pulsed −0.01 −0.1 −1 Fig.5 Gain bandwidth product vs. emitter current Fig.4 Grounded emitter propagation characteristics 1 1000 EMITTER CURRENT : IE (A) BASE TO EMITTER VOLTAGE : VBE (V) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) VBE(sat) Ta=100°C 0.1 10 −0.001 1.5 100 =20/1 IC/IB=20 Pulsed 1000 VCE=2V Pulsed Ta=100°C 1 Ta=−40°C Ta=25°C Ta=100°C Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current Fig.1 DC current gain vs. collector current 10 10 −10 SWITCHING TIME : (ns) DC CURRENT GAIN : hFE Ta=100°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Tr1 tstg 100 10 tdon tf tr 1 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.6 Switching time IE=0A f=1MHz Ta=25°C Cib Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 3/4 QSL10 Transistors Di2 1000m REVERSE CURRENT : IR (A) 100m 1 C 5° Ta =2 5 °C 10m 2 =1 Ta =− 25 °C 100m Ta FORWARD CURRENT : IF (A) 10 1m Ta=125°C 10m 1m 100µ Ta=25°C 10µ 1µ Ta=−25°C 0.1µ 0.1m 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 50 60 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.8 Forward characteristics Fig.9 Reverse characteristics 70 Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1