2SA2007 Transistors High-speed Switching Transistor (−60V,−12A) 2SA2007 !External dimensions (Units : mm) !Features 1) High switching speed. (Typ. tf = 0.15µs at Ic = −6A) 2) Low saturation voltage. (Typ. VCE(sat) = −0.2V at IC / IB = −6A / −0.3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5526. 4.5 10.0 1.2 1.3 0.8 2.54 2.54 (1) (2) (3) (1) (2) (3) ROHM : TO-220FN !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits Unit VCBO VCEO −100 −60 −5 −12 −20 V V V A A(Pulse) VEBO Collector current IC Collectorpowerdissipation PC 2 25 W W(Tc=25°C) Tj Tstg 150 −55 ∼ +150 °C °C Junction temperature Storage temperature !Packaging specifications and hFE Type Package 2SA2007 TO-220FN hFE Code Basic ordering unit (pieces) F − 500 !Electrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current BVCBO BVCEO BVEBO ICBO IEBO Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) −100 −60 −5 − − − − − − 160 − − − − − − − − − − − V V V µA µA V V V V − 80 − − − −10 −10 −0.3 −0.5 −1.2 −1.5 320 − ton tstg − − − 250 − − 0.3 1.5 tf − − 0.3 Parameter DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time hFE fT Cob − MHz pF µs µs µs 2.8 8.0 5.0 14.0 15.0 12.0 φ 3.2 Conditions IC = −50µA IC = −1mA IE = −50µA VCB = −100V VEB = −5V IC/IB = −6A/−0.3A IC/IB = −8A/−0.4A IC/IB = −6A/−0.3A IC/IB = −8A/−0.4A VCE = −2V , IC = −2A VCE = −10V , IE = 1A , f = 30MHz VCB = −10V , IE = 0A , f = 1MHz IC = −6A , RL = 5Ω IB1 = −IB2 = −0.3A VCC −30V 0.75 2.6 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)