Data Sheet μPA2690T1R R07DS1000EJ0101 Rev.1.01 Mar 04, 2013 COMPLEMENTARY MOSFET 20V, 4.0A, 42mΩ / –20V, –3.0A, 79mΩ Description The μPA2690T1R is Dual N- and P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features • N-channel 2.5V, P-channel 1.8V drive available • Low on-state resistance N-channel ⎯ RDS (on)1 = 42 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A) ⎯ RDS (on)2 = 62 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A) P-channel ⎯ RDS (on)1 = 79 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A) ⎯ RDS (on)2 = 105 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A) ⎯ RDS (on)3 = 182 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A) • Built-in gate protection diode • Lead-free and Halogen-free 6pinHUSON2020(Dual) Ordering Information Part Number Package μPA2690T1R-E2-AX∗1 6pinHUSON2020(Dual) Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (1 unit, 5 s) ∗2 Total Power Dissipation (2 units, 5 s) ∗2 Symbol VDSS N-CHANNEL P-CHANNEL Unit 20 ±12 ±4.0 ±16 –20 m10 m3.0 m12 V V A A VGSS ID(DC) ID(pulse) PT1 PT2 Tch TSTG 1.5 2.3 150 –55 to +150 Channel Temperature Storage Temperature Notes: ∗1. PW≤10 μs, Duty Cycle≤1% ∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt W W °C °C Caution: This product (N-channel) is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD = ±400V MIN. ( C = 100pF, R = 1.5KΩ ) R07DS1000EJ0101 Rev.1.01 Mar 04, 2013 Page 1 of 10 μPA2690T1R Electrical Characteristics (TA = 25°C) N-channel MOSFET Characteristics Symbol Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance ∗1 IDSS IGSS VGS(off) | yfs | RDS(on)1 Drain to Source On-state Resistance ∗1 TYP. 0.5 5.0 33 43 330 66 38 12 6.4 27 6.6 4.5 1.0 1.5 RDS(on)2 Ciss Coss Crss td (on) tr td (off) tf QG QGS QGD Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Note: MIN. MAX. Unit 1.0 ±10 1.5 μA μA 42 62 1.5 VF(S–D) V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Test Conditions VDS = 20 V, VGS = 0 V VGS = ±10 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.0 A VGS = 4.5 V, ID = 2.0 A VGS = 2.5 V, ID = 2.0 A VDS = 10 V, VGS = 0 V, f = 1.0 MHz ID = 2.0 A, VDD = 10 V, VGS = 4.5 V, RG = 6 Ω ID = 4.0 A , VDD = 16 V, VGS = 10 V IF = 4.0 A, VGS = 0 V ∗1. Pulsed TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% IG = 2 mA RL 50 Ω VDD 90% PG. VDS 90% VGS 0 90% VDS VDS τ τ = 1 μs Duty Cycle ≤ 1% R07DS1000EJ0101 Rev.1.01 Mar 04, 2013 10% 0 10% Wave Form td(on) tr ton td(off) tf toff Page 2 of 10 μPA2690T1R P-channel MOSFET Characteristics Symbol Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance ∗1 Drain to Source On-state Resistance ∗1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 MIN. IDSS IGSS VGS(off) | yfs | RDS(on)1 TYP. MAX. Unit –1.0 m10 –1.1 μA μA –0.4 4.5 63 78 109 473 88 68 11.5 4.0 37.5 12.5 5.1 0.9 1.5 RDS(on)2 RDS(on)3 Ciss Coss Crss td (on) tr td (off) tf QG QGS QGD 79 105 182 1.5 VF(S–D) V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Test Conditions VDS = –20 V, VGS = 0 V VGS = m8 V, VDS = 0 V VDS = –10 V, ID = –1 mA VDS = –5 V, ID = –2 A VGS = –4.5 V, ID = –1.5 A VGS = –2.5 V, ID = –1.5 A VGS = –1.8 V, ID = –1.5 A VDS = –10 V, VGS = 0 V, f = 1.0 MHz ID = –1.5 A, VDD = –10.0 V, VGS = –4.0 V, RG = 6 Ω ID = –3.0 A , VDD = –16 V, VGS = –4.5 V IF = 3.0 A, VGS = 0 V ∗1. Pulsed Note: TEST CIRCUIT 2 GATE CHARGE TEST CIRCUIT 1 SWITCHING TIME D.U.T. D.U.T. RL RG PG. VGS(−) VGS Wave Form 0 VGS 10% IG = −2 mA RL 50 Ω VDD 90% PG. VDD VDS(−) VGS(−) 0 VDS Wave Form τ τ = 1 μs Duty Cycle ≤ 1% R07DS1000EJ0101 Rev.1.01 Mar 04, 2013 VDS 90% 90% 10% 10% 0 td(on) tr td(off) ton tf toff Page 3 of 10 μPA2690T1R Typical Characteristics (TA = 25°C) N-channel MOSFET DERATING FACTOR OF FORWARD BIAS SAFE TOTAL POWER DISSIPATION vs. OPERATING AREA AMBIENT TEMPERATURE 2.5 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 100 80 60 40 20 Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt PW=5sec 2 1.5 2units 1 1unit 0.5 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TA -Ambient Temperature - °C TA -Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID – Drain Current - A 100 10 ID(pulse)=16A ID(DC)=4A 1 Power Dissipation Limited 0.1 TA=25ºC 2units Single Pulse Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt 0.01 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 Single pulse Rth(ch-a)=83.3ºC/W(1units 5s) 100 Rth(ch-a)=54.3ºC/W(2units 5s) 10 1 0.1 0.01 Rth(ch-A) : Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS1000EJ0101 Rev.1.01 Mar 04, 2013 Page 4 of 10 μPA2690T1R DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE 10 20 2.5V 10 1 ID - Drain Current - A ID –Drain Current - A VGS=4.5V 15 TA=150°C 75°C 25°C -55°C 0.1 0.01 5 0.001 Pulsed 0 0 0.5 1 1.5 VDS = 10V Pulsed 0.0001 2 0 0.5 2 GATE TO SOURCE CUT-OFF VOLTAGE vs. FORWARD TRANSFER ADMITTANCE vs. CHANNEL TEMPERATURE DRAIN CURRENT 1.2 100 0.8 0.6 0.4 0.2 VDS = 10V ID = 1mA 0.0 -50 0 50 100 150 10 TA = 150°C 75°C 25°C -55°C 1 0.1 S 1.0 0.01 VDS = 10V Pulsed 0.001 0.001 0.01 Tch - Channel Temperature - °C 0.1 1 10 100 ID – Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE 100 Pulsed 80 60 VGS = 2.5V 40 4.5V 20 0 0.1 1 10 ID - Drain Current - A R07DS1000EJ0101 Rev.1.01 Mar 04, 2013 100 RDS(on) – Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 1.5 VGS - Gate to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) – Gate to Source Cut-off Voltage - V VDS - Drain to Source Voltage - V 1 100 ID = 2.0A Pulsed 80 60 40 20 0 0 2 4 6 8 10 VGS - Gate to Source Voltage - V Page 5 of 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CAPACITANCE vs. CHANNEL TEMPERATURE VOLTAGE 100 Ciss, Coss, Crss - Capacitance - pF Pulsed ID = 2.0A 80 60 VGS = 2.5V 40 4.5V 20 1,000 Ciss 100 Coss Crss VGS = 0V f = 1.0MHz 10 0 -50 0 50 100 0.1 150 1 10 100 VDS – Drain to Source Voltage - V Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 30 VDS - Drain to Source Voltage - V 100 td(on), tf, td(off), tr - Switching Time -μs DRAIN TO SOURCE td(off) td(on) tf 10 tr VDD = 10V VGS = 4.5V RG = 6Ω 1 0.1 1 10 VDD= 20V 16V 10V 25 VDS 20 12 VGS 10 8 15 6 10 4 5 2 ID=4.0A 0 100 0 0 1 2 3 4 5 6 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current – A 100 Pulsed VGS=4.5V 2.5V 10 0V 1 0 0.5 1 1.5 VF(S–D) - Drain to Source Voltage - V R07DS1000EJ0101 Rev.1.01 Mar 04, 2013 Page 6 of 10 VGS - Gate to Source Voltage - V RDS(on) –Drain to Source On-state Resistance - mΩ μPA2690T1R μPA2690T1R P-channel MOSFET DERATING FACTOR OF FORWARD BIAS SAFE TOTAL POWER DISSIPATION vs. OPERATING AREA AMBIENT TEMPERATURE 2.5 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 100 80 60 40 20 Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt PW=5sec 2 1.5 2units 1 1unit 0.5 0 0 0 25 50 75 100 125 150 175 0 25 TA -Ambient Temperature - °C 50 75 100 125 150 175 TA -Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID – Drain Current - A -100 RDS(on) Limited (VGS=–4.5V) ID(pulse)=–12A -10 ID(DC)=–3A -1 Power Dissipation Limited -0.1 -0.01 TA=25ºC 2units Single Pulse Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 Single pulse Rth(ch-a)=83.3ºC/W(1units 5s) 100 Rth(ch-a)=54.3ºC/W(2units 5s) 10 1 0.1 0.01 Rth(ch-A) : Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS1000EJ0101 Rev.1.01 Mar 04, 2013 Page 7 of 10 μPA2690T1R DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE -100 -14 -10 VGS=–4.5V -10 ID - Drain Current - A ID –Drain Current - A -12 –2.5V -8 –1.8V -6 -4 TA=150°C 75°C 25°C -55°C -1 -0.1 -0.01 -0.001 -2 Pulsed -0 -0 -0.5 -1 VDS = –10V Pulsed -0.0001 -1.5 -0 -1.5 -2 GATE TO SOURCE CUT-OFF VOLTAGE vs. FORWARD TRANSFER ADMITTANCE vs. CHANNEL TEMPERATURE DRAIN CURRENT 1000 -1 -0.6 -0.4 -0.2 VDS = –10V ID = –1mA -0 -50 0 50 100 150 100 TA = 150°C 75°C 25°C -55°C 10 1 S -0.8 0.1 0.01 -0.01 Tch - Channel Temperature - °C VDS = –5V Pulsed -0.1 -1 -10 -100 ID – Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE 200 Pulsed 150 VGS = –1.8V –2.5V 100 –4.5V 50 0 -0.1 -1 -10 ID - Drain Current - A R07DS1000EJ0101 Rev.1.01 Mar 04, 2013 -100 RDS(on) – Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ -1 VGS - Gate to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) – Gate to Source Cut-off Voltage - V VDS - Drain to Source Voltage - V -0.5 200 ID = –1.5A Pulsed 150 100 50 0 -0 -2 -4 -6 -8 VGS - Gate to Source Voltage - V Page 8 of 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CAPACITANCE vs. CHANNEL TEMPERATURE VOLTAGE Pulsed ID = –1.5A 140 VGS = –1.8V 120 –2.5V 100 80 –4.5V 60 40 1000 Ciss 100 Coss Crss VGS = 0V f = 1.0MHz 20 10 -0.1 0 -50 0 50 100 150 -1 -10 -100 VDS – Drain to Source Voltage - V Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS -5 -25 td(off) tf 10 td(on) tr VDD = –10V VGS = –4.0V RG = 6Ω 1 0.1 1 10 100 VDS - Drain to Source Voltage - V 100 td(on), tf, td(off), tr - Switching Time -μs DRAIN TO SOURCE VGS VDD= –16V –10V –4V -20 VDS -4 -15 -3 -10 -2 -5 -1 ID = –3.0A -0 -0 0 1 2 3 4 5 6 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current – A 100 Pulsed 10 1 0.1 VGS = 0V 0.01 0 0.5 1 1.5 VF(S–D) - Drain to Source Voltage - V R07DS1000EJ0101 Rev.1.01 Mar 04, 2013 Page 9 of 10 VGS - Gate to Source Voltage - V 160 Ciss, Coss, Crss - Capacitance - pF RDS(on) –Drain to Source On-state Resistance - mΩ μPA2690T1R μPA2690T1R Package Drawings (Unit: mm) 6pinHUSON2020(DUAL) 2 ± 0.1 A 0.25 ± 0.05 RENESAS Package code : PWSN0006JD-A B 1.7 ± 0.05 4 5 6 3 0 to 0.01 0.05 S 0.65 ± 0.03 Max.0.75 0.2 ± 0.03 0.7 ± 0.04 3 0.3 ± 0.05 1 ± 0.05 2 ± 0.1 0.3 6 2 1 0.05 M S A B S Equivalent Circuit / Pin Assignment N-channel P-channel 3: Drain 6: Drain 2: Gate Body Diode 5: Gate 5 4 Body Diode 3 Gate Protection 1: Source Diode Remark Gate Protection 4: Source Diode 6 3 6 2 1 The diode connected between the gate and source of the transistor serves as a protector against ESD. 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