SP8K24 Transistor Switching (45V, 6.0A) SP8K24 zFeatures 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). zExternal dimensions (Unit : mm) SOP8 5.0±0.2 (4) 0.5±0.1 Max.1.75 1.5±0.1 0.15 6.0±0.3 3.9±0.15 (5) (1) zStructure Silicon N-channel MOS FET (8) zApplications Power switching , DC / DC converter , Inverter 0.2±0.1 0.4±0.1 0.1 1.27 Each lead has same dimensions zPackaging dimensions Package Code Basic ordering unit(pieces) Taping TB 2500 zAbsolute maximum ratings (Ta=25°C) It is the same ratings for the Tr. 1 and Tr. 2. Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP Total power dissipation PD Chanel temperature Range of Storage temperature Tch Tstg zEquivalent circuit (8) Limits Unit 45 V 20 V ±6.0 A *1 ±24 A 1 A *1 24 A *2 2 W/TOTAL *2 1.4 W/ELEMENT o 150 C o -55 to +150 C (7) ∗2 (6) (5) ∗2 (1) (2) (3) (4) ∗1 (1) ∗1 (2) (8) (7) (6) (5) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. *1 PW≦10µｓ、Duty cycle≦1% 1/4 SP8K24 Transistor zElectrical characteristics (Ta=25°C) It is the same characteristics for the Tr. 1 and Tr. 2. Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Symbol IGSS V(BR)DSS IDSS VGS(th) Static drain-source on-state resistance RDS(on) * Forward transfer admittance Input capacitance Output capacitance Reverce transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge |Yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd * * * * * * * * Min. Typ. － 45 － 1.0 － － － 6.0 － － － － － － － － － － － － － － 18 24 26 － 1400 310 175 19 30 72 27 15.4 3.7 6.5 Max. 10 － 1 2.5 25 34 37 － － － － － － － － 21.6 － － Unit Max. 1.2 µA V µA V mΩ S Condition VGS=20V/VDS=0V ID=1mA/VGS=0V VDS=45V/VGS=0V VDS=10V/ID=1mA ID=6.0A/VGS=10V ID=6.0A/VGS=4.5V ID=6.0A/VGS=4.0V VDS=10V/ID=6.0A pF VDS=10V VGS=0V f=1MHz ns VDD=25V ID=3.0A VGS=10V RL=8Ω/RG=10Ω nC VDD=25V/ID=6.0A VGS=5V RL=4Ω/RG=10Ω Unit V Condition IS=6.0A/VGS=0V * pulsed Body diode characteristics (Source-Drain) It is the same characteristics for the Tr. 1 and Tr. 2. Parameter Forward voltage Symbol VSD * Min. Typ. － － * pulsed 2/4 SP8K24 Transistor zElectrical characteristic curves 10 1000 Ta=125oC 75oC 25oC -25oC 0.1 0.01 1.0 1.5 2.0 2.5 3.0 Ta=125oC 75oC 25oC -25oC 100 10 1 0.01 3.5 100 10 1 10 0.01 Static Drain-Source On-State Resistance RDS(on) [mΩ] 25oC -25oC 100 10 Ta=25oC pulsed 75oC VGS=0V pulsed 150 100 10 ID=6.0A 50 10 Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (2) 200 Ta=125oC pulsed 1 Drain Current : ID [A] Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (1) 1000 VGS=4V 0.1 Drain Current : ID [A] Fig.1 Typical Transfer Characteristics Ta=125oC 75oC 25oC -25oC 1 0.1 Gate-Source Voltage : VGS [V] Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=4.5V pulsed Source Current : Is [A] 1 1000 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] Drain Currnt : ID [A] VDS=10V pulsed Ta=125oC 75oC 1 25oC -25oC 0.1 ID=3.0A 0 1 0.01 0.1 1 0 10 5 Drain Current : ID [A] 0.01 0.0 15 10000 Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Switching Time : t [ns] Coss 100 Crss Ta=25 C f=1MHz VGS=0V 10 1000 1000 10 Ta=25oC VDD=25V VGS=10V tf 100 RG=10Ω Pulsed td(off) td(on) 10 tr 1 0.1 1 10 Drain-Source Voltage : VDS [V] Fig.7 Typical capacitance vs. Source-Drain Voltage 100 1.5 Fig.6 Source-Current vs. Source-Drain Voltage Gate-Source Voltage : V GS [V] Ciss 1.0 Source-Drain Voltage : VSD [V] 10000 o 0.5 Gate-Source Voltage : VGS [V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (3) Capacitance : C [pF] 10 Ta=25oC VDD=25V ID=6.0A 8 RG=10Ω Pulsed 6 4 2 0 0.01 0.1 1 Drain Current : ID [A] Fig.8 Switching Characteristics 10 0 10 20 30 Total Gate Charge : Qg [nC] Fig.9 Dynamic Input Characteristics 3/4 SP8K24 Transistor zMeasurement circuits Pulse Width VGS ID VDS RL 90% 50% 10% VGS VDS 50% 10% D.U.T. 10% RG VDD 90% td(on) ton Fig.10 Switching Time Test Circuit 90% td(off) tr tr toff Fig.11 Switching Time Waveforms VG VGS ID VDS RL IG (Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.12 Gate Charge Test Circuit Fig.13 Gate Charge Waveform 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1