RSS105N03 Transistor Switching (30V, ±10.5A) RSS105N03 zExternal dimensions (Unit : mm) zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). SOP8 5.0±0.2 (5) (1) (4) Max.1.75 1.5±0.1 0.15 (1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain 0.5±0.1 6.0±0.3 3.9±0.15 (8) zApplications Power switching, DC/DC converter. 0.2±0.1 0.4±0.1 0.1 1.27 Each lead has same dimensions zEquivalent circuit zStructure •Silicon N-channel MOS FET (8) (7) (6) (5) ∗2 (1) (2) (3) (4) ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (8) (7) (6) (5) (4) (1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipatino Channel temperature Strage temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits 30 20 ±10.5 ±42 1.6 6.4 2 150 −55 to +150 Unit V V A A A A W °C °C ∗1 ∗1 ∗2 ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board. 1/3 RSS105N03 Transistor zThermal resistance (Ta=25°C) Parameter Channel to ambient Symbol Rth (ch-a) Limits 62.5 Unit ∗ °C / W ∗ Mounted on a ceramic board. zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-starte resistance RDS (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Tum-on delay time Rise time Tum-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Min. − 30 − 1.0 − − − 7.0 − − − − − − − − − − Typ. − − − − 8.5 11.4 12.4 − 1130 350 210 9 16 53 22 15 2.9 5.9 Max. 10 − 10 2.5 11.7 15.8 17.2 − − − − − − − − − − − Unit µA V µA V mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=±10.5A, VGS=10V ID=±10.5A, VGS=4.5V ID=±10.5A, VGS=4V ID=±10.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=5.25A, VDD 15V VGS=10V RL=2.86Ω RGS=10Ω VDD 15V VGS=5V ID=±10.5A ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗Pulsed zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C) Parameter Forward voltage Symbol VSD Min. − Typ. − Max. 1.2 Unit V Conditions IS=6.4A, VGS=0V ∗ ∗Pulsed zElectrical characteristic curves 1000 Ciss Coss Crss 100 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.1 Typical Capacitance vs. Drain-Source Voltage 10000 Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed tf 1000 td (off) 100 tr 10 td (on) 1 0.01 0.1 1 10 100 DRAIN CURRENT : ID (A) Fig.2 Switching Characteristics 8 GATE-SOURCE VOLTAGE : VGS (V) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 10000 Ta=25°C 7 VDD=15V ID=10.5A 6 RG=10Ω Pulsed 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 TOTAL GATE CHARGE : Qg (nC) Fig.3 Dynamic Input Characteristics 2/3 RSS105N03 10 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 500 400 350 ID=10.5A 300 ID=5.25A 250 200 150 100 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 1 0.1 1 10 0.1 0 2 4 6 8 10 12 14 0.01 0.0 16 100 1000 100 VGS=4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 1 0.1 1 10 100 0.5 1.0 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.6 Source Current vs. Source-Drain Voltage Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage VGS=10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Typical Transfer Characteristics 100 10 VGS=0V Pulsed 50 GATE-SOURCE VOLTAGE : VGS (V) 1000 100 Ta=25°C Pulsed 450 SOURCE CURRENT : Is (A) VDS=10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : ID (A) 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Transistor 1000 100 VGS=4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 1 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) 100 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0