RENESAS UPG2430T6Z-E2-A

A Business Partner of Renesas Electronics Corporation.
Preliminary
μPG2430T6Z
Data Sheet
GaAs Integrated Circuit
SP3T Switch for Bluetooth® and 802.11a/b/g
R09DS0030EJ0100
Rev.1.00
Oct 24, 2011
DESCRIPTION
The μPG2430T6Z is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN.
This device can operate at frequencies from 0.5 to 6.0 GHz, with low insertion loss and high isolation.
This device is housed in a 8-pin plastic TSON (Thin Small Out-line Non-leaded) package and is suitable for highdensity surface mounting.
FEATURES
• Switch Control voltage
• Low insertion loss
: Vcont (H) = 3.0 V TYP., Vcont (L) = 0 V TYP.
: Lins = 0.55 dB TYP. @ f = 2.5 GHz
: Lins = 0.65 dB TYP. @ f = 6.0 GHz
• High isolation
: ISL = 28 dB TYP. @ f = 2.5 GHz
: ISL = 25 dB TYP. @ f = 6.0 GHz
• Handling power
: Pin (0.1 dB) = +28.0 dBm TYP. @ Vcont (H) = 3.0 V, Vcont (L) = 0 V
• High-density surface mounting : 8-pin plastic TSON package (1.5 × 1.5 × 0.37 mm)
APPLICATIONS
• Bluetooth and IEEE802.11a/b/g etc.
ORDERING INFORMATION
Part Number
μPG2430T6Z-E2
Order Number
μPG2430T6Z-E2-A
Package
8-pin plastic
TSON
(Pb-Free)
Marking
G6L
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 8 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPG2430T6Z-A
CAUTION
Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this
device. This device must be protected at all times from ESD. Static charges may easily produce potentials of
several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard
ESD precautions must be employed at all times.
R09DS0030EJ0100 Rev.1.00
Oct 24, 2011
Page 1 of 13
A Business Partner of Renesas Electronics Corporation.
μPG2430T6Z
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
1
8
G6L
2
3
4
RFC
1
(Top View)
RF3
8
8
(Bottom View)
1
7
NC
2
Vcont3
7
7
6
Vcont1
3
Vcont2
6
6
3
5
RF1
4
RF2
5
5
4
2
Pin No.
1
2
3
4
5
6
7
8
Pin Name
RFC
Note
NC
Vcont1
RF1
RF2
Vcont2
Vcont3
RF3
Note: Non-Connection
Remark Exposed pad : GND
TRUTH TABLE
Vcont1
High
Low
Low
Vcont2
Low
High
Low
Vcont3
Low
Low
High
RFC−RF1
ON
OFF
OFF
RFC−RF2
OFF
ON
OFF
RFC−RF3
OFF
OFF
ON
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Switch Control Voltage
Input Power (Vcont (H) = 3.0 V)
Operating Ambient Temperature
Storage Temperature
Note:
Symbol
Vcont
Pin
TA
Tstg
Ratings
Note
+6.0
+32
−45 to +85
−55 to +150
Unit
V
dBm
°C
°C
⎪Vcont (H) − Vcont (L)⎪ ≤ 6.0 V
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter
Operating Frequency
Switch Control Voltage (H)
Switch Control Voltage (L)
Control Voltage Difference (H)
Symbol
f
Vcont (H)
Vcont (L)
MIN.
0.5
1.6
−0.2
TYP.
−
3.0
0
MAX.
6.0
3.6
0.2
Unit
GHz
V
V
ΔVcont (H)
−0.1
0
0.1
V
Control Voltage Difference (L)
ΔVcont (L)
−0.1
0
0.1
V
Note 1
Note 2
Notes: 1. ΔVcont (H) is a difference between the maximum and the minimum control voltages among Vcont1 (H), Vcont2 (H)
and Vcont3 (H).
2. ΔVcont (L) is a difference between the maximum and the minimum control voltages among Vcont1 (L), Vcont2 (L)
and Vcont3 (L).
R09DS0030EJ0100 Rev.1.00
Oct 24, 2011
Page 2 of 13
A Business Partner of Renesas Electronics Corporation.
μPG2430T6Z
ELECTRICAL CHARACTERISTICS 1
(TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 8 pF,
unless otherwise specified)
Parameter
Insertion Loss
Symbol
Lins
Path
RFC to
RF1, 2, 3
Isolation
ISL
RFC to
RF1, 2, 3
(OFF)
Return Loss
RL
0.1 dB Loss Compression
Note 2
Input Power
1 dB Loss Compression
Note 3
Input Power
Input 3rd Order Intercept Point
Pin (0.1 dB)
Pin (1 dB)
IIP3
2nd Harmonics
2f0
3rd Harmonics
3f0
Switch Control Current
Switch Control Speed
Icont
tSW
RFC to
RF1, 2, 3
RFC to
RF1, 2, 3
Test Conditions
Note 1
f = 0.5 to 1.0 GHz
Note 1
f = 1.0 to 2.0 GHz
f = 2.0 to 2.5 GHz
f = 2.5 to 4.9 GHz
f = 4.9 to 6.0 GHz
Note 1
f = 0.5 to 1.0 GHz
Note 1
f = 1.0 to 2.0 GHz
f = 2.0 to 2.5 GHz
f = 2.5 to 4.9 GHz
f = 4.9 to 6.0 GHz
Note 1
f = 0.5 to 1.0 GHz
Note 1
f = 1.0 to 2.0 GHz
f = 2.0 to 2.5 GHz
f = 2.5 to 4.9 GHz
f = 4.9 to 6.0 GHz
f = 2.5 GHz
f = 6.0 GHz
f = 2.5 GHz
f = 6.0 GHz
f = 2.5 GHz, 2 tone,
5 MHz spacing
MIN.
−
−
−
−
−
24
24
23
23
20
−
16
16
16
10
+25.0
+25.0
+28.0
+28.0
−
TYP.
0.45
0.45
0.55
0.60
0.65
28
28
28
28
25
23
23
23
23
23
+28.0
+28.0
+31.0
+31.0
53
MAX.
0.60
0.60
0.70
0.80
0.90
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
f = 2.5 GHz,
Pin = +22 dBm
f = 2.5 GHz,
Pin = +22 dBm
No RF input
−
75
−
dBc
−
75
−
dBc
−
0.1
5.0
μA
50% CTL to 90/10%
RF
−
50
300
ns
Notes: 1. DC blocking capacitors = 56 pF at f = 0.5 to 2.0 GHz
2. Pin (0.1 dB) is the measured input power level when the insertion loss increases 0.1 dB more than that of the
linear range.
3. Pin (1 dB) is the measured input power level when the insertion loss increases 1 dB more than that of the linear
range.
CAUTION
It is necessary to use DC blocking capacitors with this device.
R09DS0030EJ0100 Rev.1.00
Oct 24, 2011
Page 3 of 13
A Business Partner of Renesas Electronics Corporation.
μPG2430T6Z
ELECTRICAL CHARACTERISTICS 2
(TA = +25°C, Vcont (H) = 1.8 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 8 pF,
unless otherwise specified)
Parameter
Insertion Loss
Symbol
Lins
Path
RFC to
RF1, 2, 3
Isolation
ISL
RFC to
RF1, 2, 3
(OFF)
Return Loss
RL
0.1 dB Loss Compression
Note 2
Input Power
1 dB Loss Compression
Note 3
Input Power
Input 3rd Order Intercept Point
Pin (0.1 dB)
Pin (1 dB)
IIP3
2nd Harmonics
2f0
3rd Harmonics
3f0
Switch Control Current
Switch Control Speed
Icont
tSW
RFC to
RF1, 2, 3
RFC to
RF1, 2, 3
Test Conditions
Note 1
f = 0.5 to 1.0 GHz
Note 1
f = 1.0 to 2.0 GHz
f = 2.0 to 2.5 GHz
f = 2.5 to 4.9 GHz
f = 4.9 to 6.0 GHz
Note 1
f = 0.5 to 1.0 GHz
Note 1
f = 1.0 to 2.0 GHz
f = 2.0 to 2.5 GHz
f = 2.5 to 4.9 GHz
f = 4.9 to 6.0 GHz
Note 1
f = 0.5 to 1.0 GHz
Note 1
f = 1.0 to 2.0 GHz
f = 2.0 to 2.5 GHz
f = 2.5 to 4.9 GHz
f = 4.9 to 6.0 GHz
f = 2.5 GHz
f = 6.0 GHz
f = 2.5 GHz
f = 6.0 GHz
f = 2.5 GHz, 2 tone,
5 MHz spacing
MIN.
−
−
−
−
−
24
24
23
23
20
−
16
16
16
10
+20.0
+19.0
+24.0
+22.0
−
TYP.
0.45
0.45
0.55
0.60
0.65
28
28
28
28
25
23
23
23
23
23
+23.0
+22.0
+27.0
+25.0
50
MAX.
0.60
0.60
0.70
0.80
0.90
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
f = 2.5 GHz,
Pin = +17 dBm
f = 2.5 GHz,
Pin = +17 dBm
No RF input
−
75
−
dBc
−
75
−
dBc
−
0.1
5.0
μA
50% CTL to 90/10%
RF
−
100
600
ns
Notes: 1. DC blocking capacitors = 56 pF at f = 0.5 to 2.0 GHz
2. Pin (0.1 dB) is the measured input power level when the insertion loss increases 0.1 dB more than that of the
linear range.
3. Pin (1 dB) is the measured input power level when the insertion loss increases 1 dB more than that of the linear
range.
CAUTION
It is necessary to use DC blocking capacitors with this device.
R09DS0030EJ0100 Rev.1.00
Oct 24, 2011
Page 4 of 13
A Business Partner of Renesas Electronics Corporation.
μPG2430T6Z
EVALUATION CIRCUIT
RFC
C1
Note
Vcont1
RF1
Note:
1 000 pF
C1
1
8
2
7
3
6
4
5
C1
1 000 pF
1 000 pF
C1
RF3
Vcont3
Vcont2
RF2
It is recommended to connect the pin directly to the ground, or not to connect the pin to anything.
Remarks
C1 : 0.5 to 2.0 GHz
: 2.0 to 6.0 GHz
56 pF
8 pF
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
APPLICATION INFORMATION
CB
LESD
CB
Switch
CB
• CB are DC blocking capacitors external to the device.
A value of 8 pF is sufficient for operation from 2 GHz to 6 GHz bands.
The value may be tailored to provide specific electrical responses.
• The RF ground connections should be kept as short as possible and connected to directly to a good RF ground for
best performance.
• LESD provides a means to increase the ESD protection on a specific RF port, typically the port attached to the
antenna.
R09DS0030EJ0100 Rev.1.00
Oct 24, 2011
Page 5 of 13
A Business Partner of Renesas Electronics Corporation.
μPG2430T6Z
TYPICAL CHARACTERISTICS
(Vcont (H) = 3.0 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 8 pF, unless otherwise
specified)
RFC-RF1/RF2/RF3
INSERTION LOSS vs. FREQUENCY
Insertion Loss Lins (dB)
0
–0.2
Vcont (H) = 1.8 - 3.0 V
DC blocking capacitors = 56 pF
–0.4
–0.6
8 pF
–0.8
–1
–1.2
0
1
2
5
4
3
6
Frequency f (GHz)
RFC-RF1/RF2/RF3
ISOLATION vs. FREQUENCY
–5
–10
RFC-RF1
–15
RFC-RF3 (RF2 on)
–20
–25
–30
–35
RFC-RF2
–40
–45
–50
0
2
3
RFC-RF1
–15
–20
RFC-RF3 (RF2 on)
–25
–30
–35
RFC-RF2
–40
4
5
RFC-RF3 (RF1 on)
–45
RFC-RF3 (RF1 on)
1
DC blocking capacitors = 8 pF
Vcont (H) = 1.8 - 3.0 V
–50
0
6
1
2
3
5
4
6
Frequency f (GHz)
Frequency f (GHz)
RETURN LOSS (RFC) vs. FREQUENCY
RETURN LOSS (RFC) vs. FREQUENCY
0
–5
Return Loss (RFC) RL (dB)
–5
–10
0
DC blocking capacitors = 56 pF
Vcont (H) = 1.8 - 3.0 V
RF1 on
–15
RF3 on
–20
–25
–30
–35
RF2 on
–40
–10
RF2 on
–15
RF3 on
–20
–25
–30
–35
RF1 on
–40
–45
–45
–50
0
DC blocking capacitors = 8 pF
Vcont (H) = 1.8 - 3.0 V
–5
Return Loss (RFC) RL (dB)
Isolation ISL (dB)
–10
0
DC blocking capacitors = 56 pF
Vcont (H) = 1.8 - 3.0 V
Isolation ISL (dB)
0
RFC-RF1/RF2/RF3
ISOLATION vs. FREQUENCY
1
2
3
4
5
6
Frequency f (GHz)
–50
0
1
2
3
4
5
6
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
R09DS0030EJ0100 Rev.1.00
Oct 24, 2011
Page 6 of 13
A Business Partner of Renesas Electronics Corporation.
μPG2430T6Z
0
DC blocking capacitors = 56 pF
Vcont (H) = 1.8 - 3.0 V
–5
–10
RF1 on
–15
RF3 on
–20
–25
–30
–35
RF2 on
–40
–45
–50
0
1
2
3
4
RETURN LOSS (RF1, 2, 3) vs. FREQUENCY
Return Loss (RF1, 2, 3) RL1, 2, 3 (dB)
Return Loss (RF1, 2, 3) RL1, 2, 3 (dB)
RETURN LOSS (RF1, 2, 3) vs. FREQUENCY
5
6
0
DC blocking capacitors = 8 pF
Vcont (H) = 1.8 - 3.0 V
–5
–10
RF2 on
–15
RF3 on
–20
–25
–30
–35
RF1 on
–40
–45
–50
0
1
Frequency f (GHz)
2
4
3
5
6
Frequency f (GHz)
RFC-RF1/RF2/RF3 INSERTION LOSS
vs. SWITCH CONTROL VOLTAGE (H)
Insertion Loss Lins (dB)
0
–0.2
–0.4
f = 2.5 GHz
–0.6
6 GHz
–0.8
–1
–1.2
1
1.5
2
2.5
3
3.5
4
Switch Control Voltage (H) Vcont (H) (V)
RFC-RF1/RF2/RF3 ISOLATION vs.
SWITCH CONTROL VOLTAGE (H)
0
Isolation ISL (dB)
Isolation ISL (dB)
–10
RFC-RF3 (RF1 on)
–25
–30
–35
RFC-RF2
–40
–15
–30
–35
–40
–50
1
–50
1
2.5
RFC-RF3 (RF2 on)
–25
–45
2
RFC-RF1
–20
–45
1.5
f = 6.0 GHz
–5
RFC-RF1 / RF3 (RF2 on)
–10
–20
0
f = 2.5 GHz
–5
–15
RFC-RF1/RF2/RF3 ISOLATION vs.
SWITCH CONTROL VOLTAGE (H)
3
3.5
4
Switch Control Voltage (H) Vcont (H) (V)
RFC-RF2
1.5
2
RFC-RF3 (RF1 on)
2.5
3
3.5
4
Switch Control Voltage (H) Vcont (H) (V)
Remark The graphs indicate nominal characteristics.
R09DS0030EJ0100 Rev.1.00
Oct 24, 2011
Page 7 of 13
A Business Partner of Renesas Electronics Corporation.
μPG2430T6Z
RETURN LOSS (RFC)
vs. SWITCH CONTROL VOLTAGE (H)
0
Return Loss (RFC) RL (dB)
RF2 on
RF3 on
–20
–25
–30
–35
–40
RF1 on
–50
1
1.5
2
2.5
–10
–15
RF3 on
RF2 on
–20
–25
–30
–35
RF1 on
–40
–45
3.5
3
–50
1
4
1.5
2
3.5
3
2.5
4
Switch Control Voltage (H) Vcont (H) (V)
Switch Control Voltage (H) Vcont (H) (V)
RETURN LOSS (RF1, 2, 3)
vs. SWITCH CONTROL VOLTAGE (H)
RETURN LOSS (RF1, 2, 3)
vs. SWITCH CONTROL VOLTAGE (H)
0
–5
–10
RF2 on
–15
Return Loss (RF1, 2, 3) RL1, 2, 3 (dB)
f = 2.5 GHz
RF3 on
–20
–25
–30
–35
–40
RF1 on
–45
–50
1
1.5
2
2.5
3.5
3
4
0
f = 6.0 GHz
–5
–10
RF2 on
–15
RF3 on
–20
–25
–30
–35
RF1 on
–40
–45
–50
1
1.5
2
2.5
3.5
3
4
Switch Control Voltage (H) Vcont (H) (V)
Switch Control Voltage (H) Vcont (H) (V)
RFC-RF1/RF2/RF3 INSERTION LOSS,
Icont vs. INPUT POWER
RFC-RF1/RF2/RF3 INSERTION LOSS,
Icont vs. INPUT POWER
Vcont (H) = 3.0 V
Lins
0.5
0.4
–1
1.8 V
–1.5
–2
–2.5
0.6
0.3
0.2
3.0 V
0.1
Icont
–3
15
1.8 V
20
25
30
0
35
Input Power Pin (dBm)
0
–0.5
f = 6.0 GHz
Lins
Vcont (H) = 3.0 V
0.5
0.4
–1
1.8 V
–1.5
–2
–2.5
0.6
Switch Control Current Icont (μA)
–0.5
f = 2.5 GHz
Insertion Loss Lins (dB)
0
Switch Control Current Icont (μA)
Return Loss (RFC) RL (dB)
–15
f = 6.0 GHz
–5
–10
–45
Return Loss (RF1, 2, 3) RL1, 2, 3 (dB)
0
f = 2.5 GHz
–5
Insertion Loss Lins (dB)
RETURN LOSS (RFC)
vs. SWITCH CONTROL VOLTAGE (H)
0.3
0.2
3.0 V
0.1
Icont
–3
15
20
25
1.8 V
30
0
35
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0030EJ0100 Rev.1.00
Oct 24, 2011
Page 8 of 13
A Business Partner of Renesas Electronics Corporation.
RFC-RF1/RF2/RF3 Pin (1 dB), Pin (0.1 dB) vs.
SWITCH CONTROL VOLTAGE (H)
35
f = 2.5 GHz
30
Pin (1 dB)
25
Pin (0.1 dB)
20
15
1
1.5
2
2.5
3
3.5
4
Switch Control Voltage (H) Vcont (H) (V)
1 dB Loss Compression Input Power Pin (1 dB) (dBm)
0.1 dB Loss Compression Input Power Pin (0.1 dB) (dBm)
1 dB Loss Compression Input Power Pin (1 dB) (dBm)
0.1 dB Loss Compression Input Power Pin (0.1 dB) (dBm)
μPG2430T6Z
RFC-RF1/RF2/RF3 Pin (1 dB), Pin (0.1 dB) vs.
SWITCH CONTROL VOLTAGE (H)
35
f = 6.0 GHz
30
Pin (1 dB)
25
Pin (0.1 dB)
20
15
1
1.5
2
2.5
3
3.5
4
Switch Control Voltage (H) Vcont (H) (V)
Remark The graphs indicate nominal characteristics.
R09DS0030EJ0100 Rev.1.00
Oct 24, 2011
Page 9 of 13
A Business Partner of Renesas Electronics Corporation.
μPG2430T6Z
MOUNTING PAD LAYOUT DIMENSIONS
8-PIN PLASTIC TSON (UNIT: mm)
1.2
0.7
1.1
1.7
0.4
8-0.15
Remark The mounting pad layout in this document is for reference only.
When designing PCB, please consider workability of mounting, solder joint reliability, prevention of solder
bridge and so on, in order to optimize the design.
R09DS0030EJ0100 Rev.1.00
Oct 24, 2011
Page 10 of 13
A Business Partner of Renesas Electronics Corporation.
μPG2430T6Z
PACKAGE DIMENSIONS
8-PIN PLASTIC TSON (UNIT: mm)
(Top View)
(Bottom View)
(Side View)
0.3±0.07
1.5±0.1
(C0.15)
A
0.08 MIN.
0.37+0.03
–0.05
0.15+0.07
–0.05
A
1.5±0.1
1.2±0.1
0.4±0.06
(0.24)
0.7±0.1
0.2±0.1
Remark A > 0
( ): Reference value
R09DS0030EJ0100 Rev.1.00
Oct 24, 2011
Page 11 of 13
A Business Partner of Renesas Electronics Corporation.
μPG2430T6Z
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Partial Heating
Soldering Conditions
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2% (Wt.) or below
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
Condition Symbol
IR260
HS350
CAUTION
Do not use different soldering methods together (except for partial heating).
R09DS0030EJ0100 Rev.1.00
Oct 24, 2011
Page 12 of 13
A Business Partner of Renesas Electronics Corporation.
μPG2430T6Z
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R09DS0030EJ0100 Rev.1.00
Oct 24, 2011
Page 13 of 13
μPG2430T6Z Data Sheet
Revision History
Rev.
1.00
Date
Oct 24, 2011
Description
Summary
Page
-
First edition issued
Bluetooth is a registered trademark owned by Bluetooth SIG, Inc., U.S.A.
All trademarks and registered trademarks are the property of their respective owners.
C-1