A Business Partner of Renesas Electronics Corporation. Preliminary μPG2430T6Z Data Sheet GaAs Integrated Circuit SP3T Switch for Bluetooth® and 802.11a/b/g R09DS0030EJ0100 Rev.1.00 Oct 24, 2011 DESCRIPTION The μPG2430T6Z is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This device can operate at frequencies from 0.5 to 6.0 GHz, with low insertion loss and high isolation. This device is housed in a 8-pin plastic TSON (Thin Small Out-line Non-leaded) package and is suitable for highdensity surface mounting. FEATURES • Switch Control voltage • Low insertion loss : Vcont (H) = 3.0 V TYP., Vcont (L) = 0 V TYP. : Lins = 0.55 dB TYP. @ f = 2.5 GHz : Lins = 0.65 dB TYP. @ f = 6.0 GHz • High isolation : ISL = 28 dB TYP. @ f = 2.5 GHz : ISL = 25 dB TYP. @ f = 6.0 GHz • Handling power : Pin (0.1 dB) = +28.0 dBm TYP. @ Vcont (H) = 3.0 V, Vcont (L) = 0 V • High-density surface mounting : 8-pin plastic TSON package (1.5 × 1.5 × 0.37 mm) APPLICATIONS • Bluetooth and IEEE802.11a/b/g etc. ORDERING INFORMATION Part Number μPG2430T6Z-E2 Order Number μPG2430T6Z-E2-A Package 8-pin plastic TSON (Pb-Free) Marking G6L Supplying Form • Embossed tape 8 mm wide • Pin 1, 8 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: μPG2430T6Z-A CAUTION Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at all times. R09DS0030EJ0100 Rev.1.00 Oct 24, 2011 Page 1 of 13 A Business Partner of Renesas Electronics Corporation. μPG2430T6Z PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) 1 8 G6L 2 3 4 RFC 1 (Top View) RF3 8 8 (Bottom View) 1 7 NC 2 Vcont3 7 7 6 Vcont1 3 Vcont2 6 6 3 5 RF1 4 RF2 5 5 4 2 Pin No. 1 2 3 4 5 6 7 8 Pin Name RFC Note NC Vcont1 RF1 RF2 Vcont2 Vcont3 RF3 Note: Non-Connection Remark Exposed pad : GND TRUTH TABLE Vcont1 High Low Low Vcont2 Low High Low Vcont3 Low Low High RFC−RF1 ON OFF OFF RFC−RF2 OFF ON OFF RFC−RF3 OFF OFF ON ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Switch Control Voltage Input Power (Vcont (H) = 3.0 V) Operating Ambient Temperature Storage Temperature Note: Symbol Vcont Pin TA Tstg Ratings Note +6.0 +32 −45 to +85 −55 to +150 Unit V dBm °C °C ⎪Vcont (H) − Vcont (L)⎪ ≤ 6.0 V RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter Operating Frequency Switch Control Voltage (H) Switch Control Voltage (L) Control Voltage Difference (H) Symbol f Vcont (H) Vcont (L) MIN. 0.5 1.6 −0.2 TYP. − 3.0 0 MAX. 6.0 3.6 0.2 Unit GHz V V ΔVcont (H) −0.1 0 0.1 V Control Voltage Difference (L) ΔVcont (L) −0.1 0 0.1 V Note 1 Note 2 Notes: 1. ΔVcont (H) is a difference between the maximum and the minimum control voltages among Vcont1 (H), Vcont2 (H) and Vcont3 (H). 2. ΔVcont (L) is a difference between the maximum and the minimum control voltages among Vcont1 (L), Vcont2 (L) and Vcont3 (L). R09DS0030EJ0100 Rev.1.00 Oct 24, 2011 Page 2 of 13 A Business Partner of Renesas Electronics Corporation. μPG2430T6Z ELECTRICAL CHARACTERISTICS 1 (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 8 pF, unless otherwise specified) Parameter Insertion Loss Symbol Lins Path RFC to RF1, 2, 3 Isolation ISL RFC to RF1, 2, 3 (OFF) Return Loss RL 0.1 dB Loss Compression Note 2 Input Power 1 dB Loss Compression Note 3 Input Power Input 3rd Order Intercept Point Pin (0.1 dB) Pin (1 dB) IIP3 2nd Harmonics 2f0 3rd Harmonics 3f0 Switch Control Current Switch Control Speed Icont tSW RFC to RF1, 2, 3 RFC to RF1, 2, 3 Test Conditions Note 1 f = 0.5 to 1.0 GHz Note 1 f = 1.0 to 2.0 GHz f = 2.0 to 2.5 GHz f = 2.5 to 4.9 GHz f = 4.9 to 6.0 GHz Note 1 f = 0.5 to 1.0 GHz Note 1 f = 1.0 to 2.0 GHz f = 2.0 to 2.5 GHz f = 2.5 to 4.9 GHz f = 4.9 to 6.0 GHz Note 1 f = 0.5 to 1.0 GHz Note 1 f = 1.0 to 2.0 GHz f = 2.0 to 2.5 GHz f = 2.5 to 4.9 GHz f = 4.9 to 6.0 GHz f = 2.5 GHz f = 6.0 GHz f = 2.5 GHz f = 6.0 GHz f = 2.5 GHz, 2 tone, 5 MHz spacing MIN. − − − − − 24 24 23 23 20 − 16 16 16 10 +25.0 +25.0 +28.0 +28.0 − TYP. 0.45 0.45 0.55 0.60 0.65 28 28 28 28 25 23 23 23 23 23 +28.0 +28.0 +31.0 +31.0 53 MAX. 0.60 0.60 0.70 0.80 0.90 − − − − − − − − − − − − − − − Unit dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm f = 2.5 GHz, Pin = +22 dBm f = 2.5 GHz, Pin = +22 dBm No RF input − 75 − dBc − 75 − dBc − 0.1 5.0 μA 50% CTL to 90/10% RF − 50 300 ns Notes: 1. DC blocking capacitors = 56 pF at f = 0.5 to 2.0 GHz 2. Pin (0.1 dB) is the measured input power level when the insertion loss increases 0.1 dB more than that of the linear range. 3. Pin (1 dB) is the measured input power level when the insertion loss increases 1 dB more than that of the linear range. CAUTION It is necessary to use DC blocking capacitors with this device. R09DS0030EJ0100 Rev.1.00 Oct 24, 2011 Page 3 of 13 A Business Partner of Renesas Electronics Corporation. μPG2430T6Z ELECTRICAL CHARACTERISTICS 2 (TA = +25°C, Vcont (H) = 1.8 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 8 pF, unless otherwise specified) Parameter Insertion Loss Symbol Lins Path RFC to RF1, 2, 3 Isolation ISL RFC to RF1, 2, 3 (OFF) Return Loss RL 0.1 dB Loss Compression Note 2 Input Power 1 dB Loss Compression Note 3 Input Power Input 3rd Order Intercept Point Pin (0.1 dB) Pin (1 dB) IIP3 2nd Harmonics 2f0 3rd Harmonics 3f0 Switch Control Current Switch Control Speed Icont tSW RFC to RF1, 2, 3 RFC to RF1, 2, 3 Test Conditions Note 1 f = 0.5 to 1.0 GHz Note 1 f = 1.0 to 2.0 GHz f = 2.0 to 2.5 GHz f = 2.5 to 4.9 GHz f = 4.9 to 6.0 GHz Note 1 f = 0.5 to 1.0 GHz Note 1 f = 1.0 to 2.0 GHz f = 2.0 to 2.5 GHz f = 2.5 to 4.9 GHz f = 4.9 to 6.0 GHz Note 1 f = 0.5 to 1.0 GHz Note 1 f = 1.0 to 2.0 GHz f = 2.0 to 2.5 GHz f = 2.5 to 4.9 GHz f = 4.9 to 6.0 GHz f = 2.5 GHz f = 6.0 GHz f = 2.5 GHz f = 6.0 GHz f = 2.5 GHz, 2 tone, 5 MHz spacing MIN. − − − − − 24 24 23 23 20 − 16 16 16 10 +20.0 +19.0 +24.0 +22.0 − TYP. 0.45 0.45 0.55 0.60 0.65 28 28 28 28 25 23 23 23 23 23 +23.0 +22.0 +27.0 +25.0 50 MAX. 0.60 0.60 0.70 0.80 0.90 − − − − − − − − − − − − − − − Unit dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm f = 2.5 GHz, Pin = +17 dBm f = 2.5 GHz, Pin = +17 dBm No RF input − 75 − dBc − 75 − dBc − 0.1 5.0 μA 50% CTL to 90/10% RF − 100 600 ns Notes: 1. DC blocking capacitors = 56 pF at f = 0.5 to 2.0 GHz 2. Pin (0.1 dB) is the measured input power level when the insertion loss increases 0.1 dB more than that of the linear range. 3. Pin (1 dB) is the measured input power level when the insertion loss increases 1 dB more than that of the linear range. CAUTION It is necessary to use DC blocking capacitors with this device. R09DS0030EJ0100 Rev.1.00 Oct 24, 2011 Page 4 of 13 A Business Partner of Renesas Electronics Corporation. μPG2430T6Z EVALUATION CIRCUIT RFC C1 Note Vcont1 RF1 Note: 1 000 pF C1 1 8 2 7 3 6 4 5 C1 1 000 pF 1 000 pF C1 RF3 Vcont3 Vcont2 RF2 It is recommended to connect the pin directly to the ground, or not to connect the pin to anything. Remarks C1 : 0.5 to 2.0 GHz : 2.0 to 6.0 GHz 56 pF 8 pF The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. APPLICATION INFORMATION CB LESD CB Switch CB • CB are DC blocking capacitors external to the device. A value of 8 pF is sufficient for operation from 2 GHz to 6 GHz bands. The value may be tailored to provide specific electrical responses. • The RF ground connections should be kept as short as possible and connected to directly to a good RF ground for best performance. • LESD provides a means to increase the ESD protection on a specific RF port, typically the port attached to the antenna. R09DS0030EJ0100 Rev.1.00 Oct 24, 2011 Page 5 of 13 A Business Partner of Renesas Electronics Corporation. μPG2430T6Z TYPICAL CHARACTERISTICS (Vcont (H) = 3.0 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 8 pF, unless otherwise specified) RFC-RF1/RF2/RF3 INSERTION LOSS vs. FREQUENCY Insertion Loss Lins (dB) 0 –0.2 Vcont (H) = 1.8 - 3.0 V DC blocking capacitors = 56 pF –0.4 –0.6 8 pF –0.8 –1 –1.2 0 1 2 5 4 3 6 Frequency f (GHz) RFC-RF1/RF2/RF3 ISOLATION vs. FREQUENCY –5 –10 RFC-RF1 –15 RFC-RF3 (RF2 on) –20 –25 –30 –35 RFC-RF2 –40 –45 –50 0 2 3 RFC-RF1 –15 –20 RFC-RF3 (RF2 on) –25 –30 –35 RFC-RF2 –40 4 5 RFC-RF3 (RF1 on) –45 RFC-RF3 (RF1 on) 1 DC blocking capacitors = 8 pF Vcont (H) = 1.8 - 3.0 V –50 0 6 1 2 3 5 4 6 Frequency f (GHz) Frequency f (GHz) RETURN LOSS (RFC) vs. FREQUENCY RETURN LOSS (RFC) vs. FREQUENCY 0 –5 Return Loss (RFC) RL (dB) –5 –10 0 DC blocking capacitors = 56 pF Vcont (H) = 1.8 - 3.0 V RF1 on –15 RF3 on –20 –25 –30 –35 RF2 on –40 –10 RF2 on –15 RF3 on –20 –25 –30 –35 RF1 on –40 –45 –45 –50 0 DC blocking capacitors = 8 pF Vcont (H) = 1.8 - 3.0 V –5 Return Loss (RFC) RL (dB) Isolation ISL (dB) –10 0 DC blocking capacitors = 56 pF Vcont (H) = 1.8 - 3.0 V Isolation ISL (dB) 0 RFC-RF1/RF2/RF3 ISOLATION vs. FREQUENCY 1 2 3 4 5 6 Frequency f (GHz) –50 0 1 2 3 4 5 6 Frequency f (GHz) Remark The graphs indicate nominal characteristics. R09DS0030EJ0100 Rev.1.00 Oct 24, 2011 Page 6 of 13 A Business Partner of Renesas Electronics Corporation. μPG2430T6Z 0 DC blocking capacitors = 56 pF Vcont (H) = 1.8 - 3.0 V –5 –10 RF1 on –15 RF3 on –20 –25 –30 –35 RF2 on –40 –45 –50 0 1 2 3 4 RETURN LOSS (RF1, 2, 3) vs. FREQUENCY Return Loss (RF1, 2, 3) RL1, 2, 3 (dB) Return Loss (RF1, 2, 3) RL1, 2, 3 (dB) RETURN LOSS (RF1, 2, 3) vs. FREQUENCY 5 6 0 DC blocking capacitors = 8 pF Vcont (H) = 1.8 - 3.0 V –5 –10 RF2 on –15 RF3 on –20 –25 –30 –35 RF1 on –40 –45 –50 0 1 Frequency f (GHz) 2 4 3 5 6 Frequency f (GHz) RFC-RF1/RF2/RF3 INSERTION LOSS vs. SWITCH CONTROL VOLTAGE (H) Insertion Loss Lins (dB) 0 –0.2 –0.4 f = 2.5 GHz –0.6 6 GHz –0.8 –1 –1.2 1 1.5 2 2.5 3 3.5 4 Switch Control Voltage (H) Vcont (H) (V) RFC-RF1/RF2/RF3 ISOLATION vs. SWITCH CONTROL VOLTAGE (H) 0 Isolation ISL (dB) Isolation ISL (dB) –10 RFC-RF3 (RF1 on) –25 –30 –35 RFC-RF2 –40 –15 –30 –35 –40 –50 1 –50 1 2.5 RFC-RF3 (RF2 on) –25 –45 2 RFC-RF1 –20 –45 1.5 f = 6.0 GHz –5 RFC-RF1 / RF3 (RF2 on) –10 –20 0 f = 2.5 GHz –5 –15 RFC-RF1/RF2/RF3 ISOLATION vs. SWITCH CONTROL VOLTAGE (H) 3 3.5 4 Switch Control Voltage (H) Vcont (H) (V) RFC-RF2 1.5 2 RFC-RF3 (RF1 on) 2.5 3 3.5 4 Switch Control Voltage (H) Vcont (H) (V) Remark The graphs indicate nominal characteristics. R09DS0030EJ0100 Rev.1.00 Oct 24, 2011 Page 7 of 13 A Business Partner of Renesas Electronics Corporation. μPG2430T6Z RETURN LOSS (RFC) vs. SWITCH CONTROL VOLTAGE (H) 0 Return Loss (RFC) RL (dB) RF2 on RF3 on –20 –25 –30 –35 –40 RF1 on –50 1 1.5 2 2.5 –10 –15 RF3 on RF2 on –20 –25 –30 –35 RF1 on –40 –45 3.5 3 –50 1 4 1.5 2 3.5 3 2.5 4 Switch Control Voltage (H) Vcont (H) (V) Switch Control Voltage (H) Vcont (H) (V) RETURN LOSS (RF1, 2, 3) vs. SWITCH CONTROL VOLTAGE (H) RETURN LOSS (RF1, 2, 3) vs. SWITCH CONTROL VOLTAGE (H) 0 –5 –10 RF2 on –15 Return Loss (RF1, 2, 3) RL1, 2, 3 (dB) f = 2.5 GHz RF3 on –20 –25 –30 –35 –40 RF1 on –45 –50 1 1.5 2 2.5 3.5 3 4 0 f = 6.0 GHz –5 –10 RF2 on –15 RF3 on –20 –25 –30 –35 RF1 on –40 –45 –50 1 1.5 2 2.5 3.5 3 4 Switch Control Voltage (H) Vcont (H) (V) Switch Control Voltage (H) Vcont (H) (V) RFC-RF1/RF2/RF3 INSERTION LOSS, Icont vs. INPUT POWER RFC-RF1/RF2/RF3 INSERTION LOSS, Icont vs. INPUT POWER Vcont (H) = 3.0 V Lins 0.5 0.4 –1 1.8 V –1.5 –2 –2.5 0.6 0.3 0.2 3.0 V 0.1 Icont –3 15 1.8 V 20 25 30 0 35 Input Power Pin (dBm) 0 –0.5 f = 6.0 GHz Lins Vcont (H) = 3.0 V 0.5 0.4 –1 1.8 V –1.5 –2 –2.5 0.6 Switch Control Current Icont (μA) –0.5 f = 2.5 GHz Insertion Loss Lins (dB) 0 Switch Control Current Icont (μA) Return Loss (RFC) RL (dB) –15 f = 6.0 GHz –5 –10 –45 Return Loss (RF1, 2, 3) RL1, 2, 3 (dB) 0 f = 2.5 GHz –5 Insertion Loss Lins (dB) RETURN LOSS (RFC) vs. SWITCH CONTROL VOLTAGE (H) 0.3 0.2 3.0 V 0.1 Icont –3 15 20 25 1.8 V 30 0 35 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. R09DS0030EJ0100 Rev.1.00 Oct 24, 2011 Page 8 of 13 A Business Partner of Renesas Electronics Corporation. RFC-RF1/RF2/RF3 Pin (1 dB), Pin (0.1 dB) vs. SWITCH CONTROL VOLTAGE (H) 35 f = 2.5 GHz 30 Pin (1 dB) 25 Pin (0.1 dB) 20 15 1 1.5 2 2.5 3 3.5 4 Switch Control Voltage (H) Vcont (H) (V) 1 dB Loss Compression Input Power Pin (1 dB) (dBm) 0.1 dB Loss Compression Input Power Pin (0.1 dB) (dBm) 1 dB Loss Compression Input Power Pin (1 dB) (dBm) 0.1 dB Loss Compression Input Power Pin (0.1 dB) (dBm) μPG2430T6Z RFC-RF1/RF2/RF3 Pin (1 dB), Pin (0.1 dB) vs. SWITCH CONTROL VOLTAGE (H) 35 f = 6.0 GHz 30 Pin (1 dB) 25 Pin (0.1 dB) 20 15 1 1.5 2 2.5 3 3.5 4 Switch Control Voltage (H) Vcont (H) (V) Remark The graphs indicate nominal characteristics. R09DS0030EJ0100 Rev.1.00 Oct 24, 2011 Page 9 of 13 A Business Partner of Renesas Electronics Corporation. μPG2430T6Z MOUNTING PAD LAYOUT DIMENSIONS 8-PIN PLASTIC TSON (UNIT: mm) 1.2 0.7 1.1 1.7 0.4 8-0.15 Remark The mounting pad layout in this document is for reference only. When designing PCB, please consider workability of mounting, solder joint reliability, prevention of solder bridge and so on, in order to optimize the design. R09DS0030EJ0100 Rev.1.00 Oct 24, 2011 Page 10 of 13 A Business Partner of Renesas Electronics Corporation. μPG2430T6Z PACKAGE DIMENSIONS 8-PIN PLASTIC TSON (UNIT: mm) (Top View) (Bottom View) (Side View) 0.3±0.07 1.5±0.1 (C0.15) A 0.08 MIN. 0.37+0.03 –0.05 0.15+0.07 –0.05 A 1.5±0.1 1.2±0.1 0.4±0.06 (0.24) 0.7±0.1 0.2±0.1 Remark A > 0 ( ): Reference value R09DS0030EJ0100 Rev.1.00 Oct 24, 2011 Page 11 of 13 A Business Partner of Renesas Electronics Corporation. μPG2430T6Z RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Partial Heating Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2% (Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below Condition Symbol IR260 HS350 CAUTION Do not use different soldering methods together (except for partial heating). R09DS0030EJ0100 Rev.1.00 Oct 24, 2011 Page 12 of 13 A Business Partner of Renesas Electronics Corporation. μPG2430T6Z Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. R09DS0030EJ0100 Rev.1.00 Oct 24, 2011 Page 13 of 13 μPG2430T6Z Data Sheet Revision History Rev. 1.00 Date Oct 24, 2011 Description Summary Page - First edition issued Bluetooth is a registered trademark owned by Bluetooth SIG, Inc., U.S.A. All trademarks and registered trademarks are the property of their respective owners. C-1