μPD5904T7K

A Business Partner of Renesas Electronics Corporation.
Preliminary
μPD5904T7K
CMOS Integrated Circuits High Power SP4T Switch
Data Sheet
R09DS0045EJ0200
Rev.2.00
Dec 11, 2012
DESCRIPTION
ED
The μPD5904T7K is a CMOS MMIC SP4T (Single Pole Four Throw) switch for GSM and UMTS/LTE main Antenna
switching and other High Power RF switching applications up to +35 dBm.
This device can operate frequency from 0.05 to 6.0 GHz, having low insertion loss and high isolation.
This device is housed in a 12-pin plastic QFN (Quad Flat Non-Leaded) (T7K) package.
FEATURES
•
•
•
•
Low control voltage
Low insertion loss
: Vcont = 1.3 V MIN.,VDD = 2.3 V MIN.
: Lins = 0.4 dB TYP. @ f = 1 GHz
: Lins = 0.5 dB TYP. @ f = 2 GHz
High isolation
: ISL = 35 dB TYP. @ f = 1 GHz
: ISL = 30 dB TYP. @ f = 2 GHz
High Handling power
: Pin (0.1dB) = +38 dBm TYP. @f = 0.9/2 GHz
High-density surface mounting : 12-pin plastic QFN (T7K) package (2.0 × 2.0 × 0.6 mm)
No DC blocking capacitors required.
APPLICATIONS
GSM and UMTS/LTE main Antenna switching
Diversity Antenna switching
Antenna tuning Application
NT
•
•
•
IN
U
•
•
ORDERING INFORMATION
Part Number
μPD5904T7K-E2
Order Number
μPD5904T7K-E2-A
Package
12-pin plastic
QFN
(T7K) (Pb-Free)
Marking
5904
Supplying Form
DI
SC
O
Embossed tape 8 mm wide
Pin 10, 11 and 12 face the perforation side
of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPD5904T7K-A
•
•
CAUTION
Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this
device. This device must be protected at all times from ESD. Static charges may easily produce potentials of
several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard
ESD precautions must be employed at all times.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0045EJ0200 Rev.2.00
Dec 11, 2012
Page 1 of 14
A Business Partner of Renesas Electronics Corporation.
μPD5904T7K
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
9
8
RF3
2
RF2
8
8
7
GND
3
GND
7
4
6
5
BLOCK DIAGRAM
RF1
RF2
RF3
RF4
Vcont1
VDD
2
3
6
5
2
3
4
5
6
7
8
9
10
11
12
13
RF3
GND
VDD
Vcont1
Vcont2
GND
RF2
RF1
GND
RFC
GND
GND
4
Vcont2
SW TRUTH TABLE
Vcont2
High
Low
High
Low
RFC−RF1
ON
OFF
OFF
OFF
SC
O
Vcont1
High
High
Low
Low
13
NT
RFC
1
7
6
12
Pin Name
RF4
ED
5
RF1
9
11
Pin No.
1
IN
U
4
RF4
1
Vcont2
3
10
10
9
VDD
2
11
(Bottom View)
GND
12
RFC
10
5904
1
11
Vcont1
12
(Top View)
GND
(Top View)
RFC−RF2
OFF
ON
OFF
OFF
RFC−RF3
OFF
OFF
ON
OFF
RFC−RF4
OFF
OFF
OFF
ON
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Supply Voltage
Control Voltage
Input Power
Operating Ambient Temperature
Storage Temperature
DI
<R>
Symbol
VDD
Vcont
Pin
TA
Tstg
Ratings
3.6
3.6
+38
−40 to +85
−55 to +125
Unit
V
V
dBm
°C
°C
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Operating Frequency
Supply Voltage
Control Voltage (High)
Control Voltage (Low)
Note:
Symbol
f
VDD
Vcont (H) Note
Vcont (L)
MIN.
0.05
2.3
1.3
0
TYP.
−
−
−
−
MAX.
6.0
3.3
VDD
0.4
Unit
GHz
V
V
V
Vcont ≤ VDD
R09DS0045EJ0200 Rev.2.00
Dec 11, 2012
Page 2 of 14
A Business Partner of Renesas Electronics Corporation.
μPD5904T7K
ELECTRICAL CHARACTERISTICS
(TA = +25°C, VDD = 2.5 V, Vcont (H) = 1.8 V, Vcont (L) = 0 V, ZO = 50 Ω, unless otherwise
specified)
Return Loss
(RFC)
Return Loss
(RF1,2,3,4)
0.1 dB Loss
Compression
Input Power
Path
RFC −
RF1, 2, 3, 4
RFC −
RF1, 2, 3, 4
RFC −
RF1, 2, 3, 4
RFC −
RF1, 2, 3, 4
Pin (0.1 dB)1
Pin (0.1 dB)2
Test Conditions
f = 0.05 to 0.5 GHz
f = 0.5 to 1.0 GHz
f = 1.0 to 2.0 GHz
f = 2.0 to 2.7 GHz
f = 2.7 to 3.8 GHz
f = 3.8 to 6.0 GHz
f = 0.05 to 0.5 GHz
f = 0.5 to 1.0 GHz
f = 1.0 to 2.0 GHz
f = 2.0 to 2.7 GHz
f = 2.7 to 3.8 GHz
f = 3.8 to 6.0 GHz
f = 0.05 to 3.8 GHz
f = 3.8 to 6.0 GHz
f = 0.05 to 3.8 GHz
MIN.
−
−
−
−
−
TYP.
0.35
0.40
0.50
0.55
0.60
MAX.
0.50
0.55
0.65
0.75
0.80
Unit
dB
dB
dB
dB
dB
−
30
25
20
15
15
0.75
40
35
30
25
25
0.95
−
−
−
−
−
dB
dB
dB
dB
dB
dB
10
15
10
15
20
25
17
25
−
−
−
−
dB
dB
dB
dB
10
+36.0
17
−
−
dB
dBm
−
dBm
ED
Isolation
Symbol
Lins1
Lins2
Lins3
Lins4
Lins5
Lins6
ISL1
ISL2
ISL3
ISL4
ISL5
ISL6
RL(C)1
RL(C)2
RL(RF)1
RL(RF)2
IN
U
Parameter
Insertion Loss
f = 3.8 to 6.0 GHz
f = 0.9 GHz
+38.0
Note
f = 2.0 GHz
+36.0
+38.0
80
−
dBc
70
75
75
85
−
−
dBc
70
80
−
f = 835 MHz, Pin = +20 dBm
f = 45 MHz, Pin = –15 dBm
−
−98
−93
f = 1 950 MHz, Pin = +20 dBm
f = 190MHz, Pin = –15 dBm
−
−105
−100
f = 835 MHz, Pin = +20 dBm
f = 790 MHz, Pin = –15 dBm
−
−110
−105
f = 1 950 MHz, Pin = +20 dBm
f = 1 760 MHz, Pin = –15 dBm
−
−110
−105
f = 836±0.5 MHz,
Pin = +21.5 dBm
f = 881.5 MHz, Pin = –30 dBm
75
80
−
75
80
−
105
110
−
IIP2(PCS)
105
110
−
Harmonics
2nd Order Inter
Modulation
Distortion
3rd Order Inter
Modulation
Distortion
2f0 (L)
3f0 (L)
2f0 (H)
3f0 (H)
IMD2(L)
IMD2(H)
RFC −
RF1, 2, 3, 4
f = 0.9 GHz,
Pin = +35 dBm CW
RFC −
RF1, 2, 3, 4
f = 2.0 GHz,
Pin = +33 dBm CW
NT
75
SC
O
Note
IMD3(L)
IMD3(H)
RFC −
RF1, 2, 3, 4
RFC −
RF1, 2, 3, 4
TBR(L)
RFC −
RF1, 2, 3, 4
Triple Beat Ratio
TBR(H)
IIP2(Cel)
DI
Input 2nd order
Intercept Point
Note:
RFC −
RF1, 2, 3, 4
f = 1 880.5±0.5 MHz,
Pin = +21.5 dBm
f = 1 960 MHz, Pin = –30 dBm
f = 836.6 MHz, Pin = +24 dBm
f = 1718 MHz, Pin = –20 dBm
f = 1 885 MHz, Pin = +24 dBm
f = 3 850 MHz, Pin = –20 dBm
dBc
dBc
dBc
dBm
Absolute Maximum Ratings
R09DS0045EJ0200 Rev.2.00
Dec 11, 2012
Page 3 of 14
A Business Partner of Renesas Electronics Corporation.
μPD5904T7K
ELECTRICAL CHARACTERISTICS
(TA = +25°C, VDD = 2.5 V, Vcont (H) = 1.8 V, Vcont (L) = 0 V, ZO = 50 Ω, unless otherwise
specified)
Symbol
Switch Control Speed
tsw
Supply Current
IDD
Path
Test Conditions
RFC −
50% CTL to 90/10%
RF1, 2, 3, 4
−
No RF
Icont1(H)
−
Vcont1: High No RF
Icont1(L)
−
Vcont1: Low No RF
Icont2(H)
−
Vcont2: High No RF
Icont2(L)
−
Vcont2: Low No RF
Control Current 1
TYP.
MAX.
−
1.5
3
−
130
250
−
−
1
Unit
μs
μA
−
−
1
−
−
1
−
−
1
DI
SC
O
NT
IN
U
Control Current 2
MIN.
ED
Parameter
R09DS0045EJ0200 Rev.2.00
Dec 11, 2012
Page 4 of 14
A Business Partner of Renesas Electronics Corporation.
μPD5904T7K
EVALUATION CIRCUIT
RFC
11
12
10
RF4
ED
GND
GND
RF1
1
9
RF3
RF2
13
GND
3
8
IN
U
2
7
GND
GND
4
Vcont1
1 000 pF
6
Vcont2
1 000 pF
NT
VDD
1 000 pF
5
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
SC
O
APPLICATION INFORMATION
Switch
LESD
• LESD provides a means to increase the ESD protection on a specific RF port, typically the port attached to the
antenna.
DI
<R>
R09DS0045EJ0200 Rev.2.00
Dec 11, 2012
Page 5 of 14
A Business Partner of Renesas Electronics Corporation.
μPD5904T7K
TYPICAL CHARACTERISTICS
(TA = +25°C, VDD = 2.5 V, Vcont (H) = 1.8 V, Vcont (L) = 0 V, ZO = 50 Ω, unless otherwise
specified)
RFC-RF1/RF2/RF3/RF4
INSERTION LOSS vs. FREQUENCY
RFC-RF2/RF3/RF4 (RFC-RF1 ON)
ISOLATION vs. FREQUENCY
−0.2
−5
−0.4
−10
−0.6
−15
−0.8
−1.0
−1.2
−1.4
−20
−25
RFC-RF2
−30
RFC-RF4
−1.8
−45
2.0
3.0
4.0
5.0
Frequency f (GHz)
IN
U
−40
1.0
−50
0.0
6.0
4.0
5.0
6.0
RF1/RF2/RF3/RF4 RETURN LOSS vs.
FREQUENCY
Return Loss RL (dB)
RFC-RF4 ON
RFC-RF1 ON
RFC-RF3 ON
RFC-RF2 ON
−10
−15
NT
Return Loss RL (dB)
−25
3.0
−5
−5
−20
2.0
0
0
−15
1.0
Frequency f (GHz)
RFC RETURN LOSS vs. FREQUENCY
−10
RFC-RF3
−35
−1.6
−2.0
0.0
ED
0
Isolation ISL (dB)
Insertion Loss Lins (dB)
0.0
−30
−35
−20
RFC-RF4 ON
RFC-RF1 ON
RFC-RF3 ON
RFC-RF2 ON
−25
−30
−35
−40
−40
−45
−45
SC
O
−50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
6.0
Frequency f (GHz)
−50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Frequency f (GHz)
DI
Remark The graphs indicate nominal characteristics.
R09DS0045EJ0200 Rev.2.00
Dec 11, 2012
Page 6 of 14
A Business Partner of Renesas Electronics Corporation.
μPD5904T7K
RFC-RF1/RF2/RF3/RF4 INSERTION LOSS vs.
SUPPLY VOLTAGE
RFC-RF1/RF2/RF3/RF4 ISOLATION vs.
SUPPLY VOLTAGE
0.0
0
−10
1.0 GHz
2.0 GHz
−0.3
−0.4
−0.5
−0.6
2.7 GHz
3.8 GHz
−0.7
−30
2.0 GHz
−40
−50
−0.9
0.5 GHz
6.0 GHz
2.2
2.4
2.4
2.4
3
3.2
3.4
−60
2
3.6
2.2
0
2.4
3
3.2
3.4
3.6
RF1/RF2/RF3/RF4-RFC RETURN LOSS vs.
SUPPLY VOLTAGE
0
−5
−5
Return Loss RL (dB)
−10
−15
−20
3.8 GHz
f = 0.5 GHz
−25
6.0 GHz
−35
1.0 GHz
2.0 GHz
−45
2
2.2
2.4
2.4
2.4
−10
−15
−20 f = 0.5 GHz
3
3.2
3.4
−35
1.0 GHz
2.0 GHz
2.7 GHz
−45
−50
2
3.6
6.0 GHz
−30
−40
2.7 GHz
3.8 GHz
−25
NT
−30
−40
2.2
2.4
2.4
2.4
3
3.2
3.4
3.6
Supply Voltage VDD (V)
Supply Voltage VDD (V)
RFC-RF1/RF2/RF3/RF4 INSERTION LOSS vs.
INPUT POWER f = 2 GHz
0.1
0.1
SC
O
RFC-RF1/RF2/RF3/RF4 INSERTION LOSS vs.
INPUT POWER f = 0.9 GHz
−0.3
VDD = 3.3 V
VDD = 2.5 V
−0.5
VDD = 2.3 V
−0.7
−0.9
−1.1
DI
−1.3
−1.5
20
25
30
35
40
Input Power Pin (dB)
Insertion Loss Lins (dB)
−0.1
Insertion Loss Lins (dB)
2.4
Supply Voltage VDD (V)
RFC-RF1/RF2/RF3/RF4 RETURN LOSS vs.
SUPPLY VOLTAGE
Return Loss RL (dB)
2.4
IN
U
Supply Voltage VDD (V)
−50
2.7 GHz
f = 6.0 GHz
1.0 GHz
−0.8
−1.0
2
3.8 GHz
−20
ED
−0.2 f = 0.5 GHz
Isolation ISL (dB)
Insertion Loss Lins (dB)
−0.1
−0.1
VDD = 3.3 V
−0.3
VDD = 2.5 V
−0.5
VDD = 2.3 V
−0.7
−0.9
−1.1
−1.3
−1.5
20
25
30
35
40
Input Power Pin (dB)
Remark The graphs indicate nominal characteristics.
R09DS0045EJ0200 Rev.2.00
Dec 11, 2012
Page 7 of 14
A Business Partner of Renesas Electronics Corporation.
μPD5904T7K
RFC-RF1/RF2/RF3/RF4 3rd HARMONICS 3fo vs.
INPUT POWER f = 0.9 GHz
−60
−60
−70
−70
−80
−90
−100
−110
−120
25
30
35
−80
−90
ED
3rd Harmonics 3fo (dBc)
2nd Harmonics 2fo (dBc)
RFC-RF1/RF2/RF3/RF4 2nd HARMONICS vs.
INPUT POWER f = 0.9 GHz
−100
−110
−120
25
40
30
Input Power Pin (dBm)
40
Input Power Pin (dBm)
RFC-RF1/RF2/RF3/RF4 3rd HARMONICS 3fo vs.
INPUT POWER f = 2 GHz
IN
U
RFC-RF1/RF2/RF3/RF4 2nd HARMONICS vs.
INPUT POWER f = 2 GHz
−60
−60
3rd Harmonics 3fo (dBc)
−70
−80
−90
−100
−110
−120
25
−70
−80
−90
−100
NT
2nd Harmonics 2fo (dBc)
35
30
35
−110
−120
25
40
30
35
40
Input Power Pin (dBm)
RFC-RF1/RF2/RF3/RF4 INSERTION LOSS vs.
OPERATING AMBIENT TEMPERATURE f = 0.5 GHz
RFC-RF1/RF2/RF3/RF4 INSERTION LOSS vs.
OPERATING AMBIENT TEMPERATURE f = 1 GHz
SC
O
Input Power Pin (dBm)
0.0
0.0
−0.2
VDD = 3.3 V
−0.3
−0.4
−0.5
VDD = 2.3 V
VDD = 2.5 V
−0.6
−0.7
−0.1
Insertion Loss Lins (dB)
Insertion Loss Lins (dB)
−0.1
−0.3
−0.4
−0.5
−0.8
−0.9
DI
−20
0
20
40
60
80 100
Operating Ambient Temperature TA (°C)
VDD = 2.5 V
−0.7
−0.9
−40
VDD = 2.3 V
−0.6
−0.8
−1.0
−60
VDD = 3.3 V
−0.2
−1.0
−60
−40
−20
0
20
40
60
80 100
Operating Ambient Temperature TA (°C)
Remark The graphs indicate nominal characteristics.
R09DS0045EJ0200 Rev.2.00
Dec 11, 2012
Page 8 of 14
A Business Partner of Renesas Electronics Corporation.
μPD5904T7K
RFC-RF1/RF2/RF3/RF4 INSERTION LOSS vs.
OPERATING AMBIENT TEMPERATURE f = 2.7 GHz
0.0
0.0
−0.1
−0.1
2.5 V
3.3 V
−0.3
−0.4
−0.5
VDD = 2.3 V
−0.6
−0.7
−0.8
−0.9
−1.0
−60
−0.2
−0.4
−0.5
−0.6
−0.8
−0.9
−40
−20
0
20
40
60
−1.0
−60
80 100
20
40
60
80 100
RFC-RF1 INSERTION LOSS vs.
OPERATING AMBIENT TEMPERATURE f = 6 GHz
−0.1
−0.3
Insertion Loss Lins (dB)
−0.2
3.3 V
−0.4
−0.5
−0.6
2.5 V
VDD = 2.3 V
−0.7
−0.8
−0.2
−0.3
−0.4
−0.5
−0.6
3.3 V
−0.7
−0.9
−40
−20
0
20
40
60
−1.0
−60
80 100
SC
O
−15
−25
3.3 V
−45
VDD = 2.3 V
−40
−20
2.5 V
0
20
40
60
80 100
20
40
60
80 100
−30
−35
2.5 V
3.3 V
−40
−45
VDD = 2.3 V
−50
−55
−60
−40
−20
0
20
40
60
80 100
Operating Ambient Temperature TA (°C)
DI
Operating Ambient Temperature TA (°C)
Isolation ISL (dB)
−25
−40
0
−15
−20
−35
−20
RFC-RF1/RF2/RF3/RF4 ISOLATION vs.
OPERATING AMBIENT TEMPERATURE f = 1 GHz
−20
−30
−40
VDD = 2.3 V
Operating Ambient Temperature TA (°C)
Operating Ambient Temperature TA (°C)
RFC-RF1/RF2/RF3/RF4 ISOLATION vs.
OPERATING AMBIENT TEMPERATURE f = 0.5 Hz
2.5 V
−0.8
NT
Insertion Loss Lins (dB)
0
0.0
−0.9
Isolation ISL (dB)
−20
IN
U
0.0
−0.1
−55
−60
−40
Operating Ambient Temperature TA (°C)
RFC-RF1/RF2/RF3/RF4 INSERTION LOSS vs.
OPERATING AMBIENT TEMPERATURE f = 3.8 GHz
−50
2.5 V
VDD = 2.3 V
−0.7
Operating Ambient Temperature TA (°C)
−1.0
−60
3.3 V
−0.3
ED
−0.2
Insertion Loss Lins (dB)
Insertion Loss Lins (dB)
RFC-RF1/RF2/RF3/RF4 INSERTION LOSS vs.
OPERATING AMBIENT TEMPERATURE f = 2 GHz
Remark The graphs indicate nominal characteristics.
R09DS0045EJ0200 Rev.2.00
Dec 11, 2012
Page 9 of 14
A Business Partner of Renesas Electronics Corporation.
μPD5904T7K
RFC-RF1/RF2/RF3/RF4 ISOLATION vs.
OPERATING AMBIENT TEMPERATURE f = 2.7 GHz
−15
−15
−20
−20
2.5 V
3.3 V
−30
−35
VDD = 2.3 V
−40
−25
−30
−35
−40
−45
−45
−50
−50
−55
−60
−40
−20
0
20
40
60
−55
−60
80 100
−15
0
20
40
60
80 100
RFC-RF1/RF2/RF3/RF4 ISOLATION vs.
OPERATING AMBIENT TEMPERATURE f = 6 GHz
2.5 V
−20
3.3 V
−25
−25
−30
Isolation ISL (dB)
Isolation ISL (dB)
−20
−15
−20
VDD = 2.3 V
−35
−40
−50
2.5 V
VDD = 2.3 V
3.3 V
−30
−35
−40
−45
NT
−45
−50
−40
−20
0
20
40
60
−55
−60
80 100
Operating Ambient Temperature TA (°C)
RFC RETURN LOSS vs. OPERATING AMBIENT
TEMPERATURE f = 3.8 GHz
SC
O
0
−5
−10
−10
−20
2.3 V
2.5 V
−25
−30
VDD = 3.3 V
−35
−40
−20
0
20
40
60
80 100
0
20
40
60
80 100
3.3 V
2.5 V
−15
−20
VDD = 2.3 V
−25
−30
−35
−40
−60
−40
−20
0
20
40
60
80 100
Operating Ambient Temperature TA (°C)
DI
Operating Ambient Temperature TA (°C)
−20
0
−5
−15
−40
Operating Ambient Temperature TA (°C)
RFC RETURN LOSS vs. OPERATING AMBIENT
TEMPERATURE f = 6.0 GHz
Return Loss RL (dB)
Return Loss RL (dB)
−40
IN
U
RFC-RF1/RF2/RF3/RF4 ISOLATION vs.
OPERATING AMBIENT TEMPERATURE f = 3.8 GHz
−40
−60
VDD = 2.3 V
Operating Ambient Temperature TA (°C)
Operating Ambient Temperature TA (°C)
−55
−60
3.3 V
2.5 V
ED
−25
Isolation ISL (dB)
Isolation ISL (dB)
RFC-RF1/RF2/RF3/RF4 ISOLATION vs.
OPERATING AMBIENT TEMPERATURE f = 2 GHz
Remark The graphs indicate nominal characteristics.
R09DS0045EJ0200 Rev.2.00
Dec 11, 2012
Page 10 of 14
A Business Partner of Renesas Electronics Corporation.
μPD5904T7K
RRF1/RF2/RF3/RF4 RETURN LOSS vs.
OPERATING AMBIENT TEMPERATURE f = 6 GHz
0
0
−5
−5
−10
−10
−15
2.5 V
− 20
3.3 V
−25
−30
VDD = 2.3 V
−35
−40
−60
−40
−20
0
20
40
60
− 20
−25
−30
−35
80 100
3.3 V
−15
−40
−60
2.5 V
VDD = 2.3 V
−40
−20
0
20
40
60
80 100
Operating Ambient Temperature TA (°C)
IN
U
Operating Ambient Temperature TA (°C)
ED
Return Loss RL (dB)
Return Loss RL (dB)
RF 1/RF2/RF3/RF4 RETURN LOSS vs.
OPERATING AMBIENT TEMPERATURE f = 3.8 GHz
DI
SC
O
NT
Remark The graphs indicate nominal characteristics.
R09DS0045EJ0200 Rev.2.00
Dec 11, 2012
Page 11 of 14
A Business Partner of Renesas Electronics Corporation.
μPD5904T7K
MOUNTING PAD LAYOUT DIMENSIONS
12-PIN PLASTIC QFN (T7K) (UNIT: mm)
MOUNTING PAD
1.15
1.15
0.5
ED
0.8
0.8
0.5
0.8
NT
12−0.15
1.15
1.2
0.8
0.5
IN
U
1.2
0.5
1.15
C0.2
SOLDER MASK
1.125
1.125
0.825
SC
O
0.825
0.5
0.5
1.125
1.125
0.825
0.825
0.5
0.97
12−0.15
DI
0.97
0.5
C0.2
Solder thickness : 0.1 mm
Remark The mounting pad layout in this document is for reference only.
When designing PCB, please consider workability of mounting, solder joint reliability, prevention of solder
bridge and so on, in order to optimize the design.
R09DS0045EJ0200 Rev.2.00
Dec 11, 2012
Page 12 of 14
A Business Partner of Renesas Electronics Corporation.
μPD5904T7K
PACKAGE DIMENSIONS
12-PIN PLASTIC QFN (T7K) (UNIT: mm)
(Top View)
(Bottom View)
(Side View)
2±0.1
1.2±0.1
0.57+0.03
–0.05
Remark A > 0
1.2±0.1
ED
A
A
0.08 MIN.
0.2+0.07
–0.05
DI
SC
O
NT
( ): Reference value
0.2±0.075
IN
U
2±0.1
0.5±0.1
(0
.3
2)
(C0.2)
R09DS0045EJ0200 Rev.2.00
Dec 11, 2012
Page 13 of 14
A Business Partner of Renesas Electronics Corporation.
μPD5904T7K
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Partial Heating
Soldering Conditions
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2% (Wt.) or below
Condition Symbol
IR260
ED
Soldering Method
Infrared Reflow
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
CAUTION
HS350
DI
SC
O
NT
IN
U
Do not use different soldering methods together (except for partial heating).
R09DS0045EJ0200 Rev.2.00
Dec 11, 2012
Page 14 of 14
μPD5904T7K Data Sheet
Revision History
Rev.
Date
Description
Summary
Page
Jul 24, 2012
–
First edition issued
2.00
Dec 11, 2012
p.2
GND is added as Pin No.13 in PIN CONNECTIONS AND INTERNAL BLOCK
DIAGRAM.
p.5
GND is added in EVALUATION CIRCUIT.
DI
SC
O
NT
IN
U
ED
1.00
All trademarks and registered trademarks are the property of their respective owners.
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