RENESAS UPD166105GS

Preliminary Data Sheet
PD166105GS
R07DS0604EJ0100
Rev.1.00
Jan 19, 2012
MOS INTEGRATED CIRCUIT
Description
The PD166105 is a high-voltage, dual output, and N-channel low-side intelligent power device with built-in
overtemperature-protection, overcurrent-limitation, and disconnection-detection circuits.
It protects itself by shutting down or limiting current when it detects overtemperature or overcurrent.
Output MOS shut down is restarted automatically by cooling of the chip temperature.
When load is normal, a diagnostic output is produced on detection of a flyback voltage.
When load is disconnected, diagnostic output stops.
Features
 High voltage dual output low side driver
 Built-in overcurrent limitation circuits and overtemperature protection circuits
 Shuts down by overtemperature detection
 Restarts automatically after cooling
 Built-in dynamic clamping circuit (100 V Min.)
 Built-in disconnection-detection circuit
 A diagnostic output is produced on detection of a flyback voltage.
 Diagnostic output stops on disconnection.
 Low on-state resistance
 High temperature operation (Tch = 175°C Max.)
 Small 20-pin SOP package
Application
 Injector driver
Ordering Information
Part No.
PD166105GS-E1-AY
PD166105GS-E2-AY
R07DS0604EJ0100 Rev.1.00
Jan 19, 2012
Lead Plating
Sn
Sn
Packing
Tape 2500 p/reel
Tape 2500 p/reel
Package
20-pin plastic SOP (7.62 mm (300))
20-pin plastic SOP (7.62 mm (300))
Page 1 of 15
PD166105GS
Block Diagram
VCC1
IN1
Dynamic
Clamping Circuit
OUT1
Input
Circuit
Overtemperature
Protection
Output MOS
(N-ch)
Current
Limitation
DIAG1
Disconnection
Detection
OUT1
Ch1
VCC2
OUT2
DIAG2
IN2
GND2
Ch2
Pin Configuration
 20-pin plastic SOP (7.62 mm (300))
OUT1
IN1
DIAG1
VCC1
OUT1
OUT2
IN2
DIAG2
VCC2
OUT2
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
OUT1
GND1
GND1
GND1
OUT1
OUT2
GND2
GND2
GND2
OUT2
(Top view)
Pin Name
Pin No.
1
2
3
4
5
Pin Name
OUT1
IN1
DIAG1
VCC1
OUT1
R07DS0604EJ0100 Rev.1.00
Jan 19, 2012
Pin No.
6
7
8
9
10
Pin Name
OUT2
IN2
DIAG2
VCC2
OUT2
Pin No.
11
12
13
14
15
Pin Name
OUT2
GND2
GND2
GND2
OUT2
Pin No.
16
17
18
19
20
Pin Name
OUT1
GND1
GND1
GND1
OUT1
Page 2 of 15
PD166105GS
Absolute Maximum Ratings
(Ta = 25°C, unless otherwise specified)
Item
Input voltage
Power supply voltage
Output voltage
Output current
DIAG output voltage
DIAG output current
Power dissipation
Channel temperature
Storage temperature
Note:
Symbol
VIN
VCC1
VCC2
VCC3
VOUT
IO(DC)
VDIAG
IDIAG
PD
Tch
Tstg
Rating
–1.5 to +7.0
–0.5 to +18
24
35
100
SELF LIMITED
7
20
2.4
–40 to +175
–55 to +175
Unit
V
V
V
V
V
A/ch
V
mA
W
°C
°C
Condition
DC
60 s
1s
Except the clamping voltage at the flyback time
VIN = 5 V, DC
Ta = 25°C, both channels are ON Note
When mounted on 50 mm  50 mm  1.6 mm epoxy PCB FR4 substrate with 600 mm2  70 m copper foil.
Caution: Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any parameters.
That is, the absolute maximum ratings are rated values at which the product is on the verge of suffering
physical damage, and therefore the product must be used under conditions that ensure that the absolute
maximum ratings are not exceeded.
The ratings and conditions indicated for DC characteristics and AC characteristics represent the quality
assurance range during normal operation.
R07DS0604EJ0100 Rev.1.00
Jan 19, 2012
Page 3 of 15
PD166105GS
Electrical Characteristics
(VCC = 5 to 18 V, Tch = –40 to +175°C, unless otherwise specified)
Item
High level input voltage
Low level input voltage
High level input current
Low level input current
Power supply current
Output on-state resistance
Symbol
VIH
VIL
IIH
IIL
ICC1
ICC2
RDS(ON)1
MIN.
3.0
—
—
–10
—
—
—
TYP.
—
—
—
—
—
—
64
MAX.
—
1.5
300
+10
10
10
91
Unit
V
V
A
A
mA/ch
mA/ch
m
Condition
Rin = 1 k, VDS = 0.3 V, IO = 1.4 A
Rin = 1 k, VDS = 20 V, IO = 1 mA
VIN = 5.5 V, VDS = 0 V
VIN = 0 V, VDS = 20 V
VIN = 16 V, ON condition
VIN = 16 V, OFF condition
RDS(ON)2
—
117
207
m
IO = 1.4 A, Tch = 175°C, VIN = VIH,
VCC = 16 V
—
—
—
—
—
—
130
35
35
30
15
350
130
—
s
s
s
s
A
V
mV/°C
Turn on time
Rise time
Turn off time
Fall time
Output leakage current
Clamp voltage
ton
tr
toff
tf
IDSS
VOUT
Temperature characteristics
of clamp voltage
VZ
3.5
—
—
—
—
100
—
Overtemperature detection
temperature
Current limitation
Flyback detection voltage
DIAG response time
THI
175
—
—
°C
ILIM
VFB
tDIAG
1.7
33
0
—
—
—
—
83
5
A
V
s
DIAG on-state resistance
RDIAG(ON)1
RDIAG(ON)2
DIAG output leakage
current
IDIAGLEAK
—
—
—
—
—
—
1.4
40
0.83
1.54
3.0
60
k
k
A
A
R07DS0604EJ0100 Rev.1.00
Jan 19, 2012
IO = 1.4 A, Tch = 25°C, VIN = VIH,
VCC = 16 V
VIN = 0  5 V, Rin = 1 k, RL = 8 ,
VCC = 12 V, Tch = 0 to 175°C
VIN = 5  0 V, Rin = 1 k, RL = 8 ,
VCC = 12 V, Tch = 0 to 175°C
VIN = 0 V, VDS = 18 V
IO = 10 mA, Tch = 25°C, VIN = 0 V
IO = 1.4 A, VIN = VIL, L = 1 mH
VIN = 5 V, VCC = 6 to 18 V
IO = 1.4 A, L = 1 mH, VDIAG = 5 V,
RDIAG = 51 k
VCC = 16 V, IODIAG = 2.4 mA
VCC = 6 V, IODIAG = 1.3 mA
VDIAG = 5 V, Tch = 25°C
VDIAG = 5 V, Tch = 175°C
Page 4 of 15
PD166105GS
Switching Measurement Waveform
IN
Waveform
50%
50%
toff
ton
tr
OUT
Waveform
tf
90%
90%
10%
10%
DIAG Output Measurement Waveform
IN
Waveform
50%
50%
ton
toff
OUT
Waveform
tr
VFB
tf
90%
10%
10%
tDIAG
DIAG
Waveform
tDIAG
90%
10%
12 V
12 V
5V
R L: 8 Ω
DIAG
VCC
VO
OUT
Rin: 1 kΩ
RDIAG: 51 kΩ
VODIAG
DIAG
L: 1 mH
VCC
VO
OUT
Rin: 1 kΩ
IN
IN
GND
VIN
Switching Measurement Circuit
R07DS0604EJ0100 Rev.1.00
Jan 19, 2012
GND
VIN
DIAG Output Measurement Circuit
Page 5 of 15
PD166105GS
Outline of Functions
Input Circuit (On/Off Control)
Output MOS turns on when the high-level input voltage (3.0 V or more) is applied to IN terminal.
Output MOS turns off when the low-level input voltage (1.5 V or less) is applied to IN terminal.
"H"
5V
VIN
GND
VOUT
VOUT
(Resistance load) GND
"H"
"H"
"L"
"L"
"L"
"L"
OFF
OFF
OFF
OFF
ON
ON
ON
Dynamic Clamp Circuit
This circuit is for protection of output and other circuits from the overvoltage by back electromotive force when
inductive load turns off. The clamp diode is connected between drain and gate of output. Output voltage is clamped by
this circuit when the voltage of the OUT terminal exceeded the output clamping voltage.
"H"
5V
VIN
GND
VOUT
VOUT
(Inductive load) GND
"L"
"L"
VZ
OFF
OFF
ON
Current Limitation Circuit
This circuit prevents destruction from the overcurrent when the short-circuit occurs. When the overcurrent flows to the
OUT terminal such as short-circuit condition, the output current is limited.
Power supply voltage to OUT terminal should be 18 V or less when the short-circuit occurs.
Overtemperature Protection Circuit
This circuit prevents destruction from overtemperature. The channel temperature of the output is monitored and the
output is shut down when overtemperature is detected. Output restarts automatically after the channel cooled down.
VIN
VOUT
Tch
R07DS0604EJ0100 Rev.1.00
Jan 19, 2012
"H"
5V
GND
VCC
GND
"L"
"L"
OFF
OFF
ON
OFF
ON
THI
Page 6 of 15
PD166105GS
Disconnection Detection Circuit
The signal on the DIAG pins goes to the low level in synchronization with the generation of flyback voltage when an
inductive load is being driven.
The high level is output on the DIAG pin when the inductive load is disconnected.
VIN
"H"
5V
GND
"L"
"L"
"L"
Disconnection
VOUT
VOUT
(Inductive load) GND
VDIAG
R07DS0604EJ0100 Rev.1.00
Jan 19, 2012
5V
OFF
OFF
ON
"H"
OFF
ON
"H"
GND
Page 7 of 15
PD166105GS
Typical Characteristics
HIGH LEVEL INPUT VOLTAGE vs.
AMBIENT TEMPERATURE
HIGH LEVEL INPUT VOLTAGE vs.
SUPPLY VOLTAGE
3.5
VIH - High Level Input Voltage - V
VIH - High Level Input Voltage - V
3.5
3.0
2.5
2.0
1.5
1.0
0
5
10
15
2.0
1.5
0
50
100
150
200
VCC - Supply Voltage - V
Ta - Ambient Temperature - °C
LOW LEVEL INPUT VOLTAGE vs.
SUPPLY VOLTAGE
LOW LEVEL INPUT VOLTAGE vs.
AMBIENT TEMPERATURE
3.5
VIL - Low Level Input Voltage - V
VIL - Low Level Input Voltage - V
2.5
1.0
–50
20
3.5
3.0
2.5
2.0
1.5
1.0
0
5
10
15
3.0
2.5
2.0
1.5
1.0
–50
20
0
50
100
150
200
VCC - Supply Voltage - V
Ta - Ambient Temperature - °C
HIGH LEVEL INPUT CURRENT vs.
SUPPLY VOLTAGE
HIGH LEVEL INPUT CURRENT vs.
AMBIENT TEMPERATURE
300
300
IIH - High Level Input Current - μA
IIH - High Level Input Current - μA
3.0
250
200
150
100
50
0
0
5
10
15
VCC - Supply Voltage - V
R07DS0604EJ0100 Rev.1.00
Jan 19, 2012
20
250
200
150
100
50
0
–50
0
50
100
150
200
Ta - Ambient Temperature - °C
Page 8 of 15
PD166105GS
OPERATING CURRENT vs.
AMBIENT TEMPERATURE
OUTPUT LEAKAGE CURRENT vs.
AMBIENT TEMPERATURE
300
5.0
ICC2
3.0
2.0
1.0
0
50
100
150
250
200
150
100
50
0
–50
200
100
150
200
TURN ON TIME vs.
AMBIENT TEMPERATURE
TURN OFF TIME vs.
AMBIENT TEMPERATURE
25
20
20
15
10
5
0
50
100
150
15
10
5
0
–50
200
0
50
100
150
200
Ta - Ambient Temperature - °C
Ta - Ambient Temperature - °C
RISE TIME vs.
AMBIENT TEMPERATURE
FALL TIME vs.
AMBIENT TEMPERATURE
25
25
20
20
15
10
15
10
5
5
0
–50
50
Ta - Ambient Temperature - °C
25
0
–50
0
Ta - Ambient Temperature - °C
toff - Turn Off Time - μs
ton - Turn On Time - μs
ICC1
4.0
0
–50
tr - Rise Time - μs
IDSS - Output Leakage Current - μA
6.0
tf - Fall Time - μs
ICC - Operating Current - mA
7.0
0
50
100
150
Ta - Ambient Temperature - °C
R07DS0604EJ0100 Rev.1.00
Jan 19, 2012
200
0
–50
0
50
100
150
200
Ta - Ambient Temperature - °C
Page 9 of 15
PD166105GS
ON-STATE RESISTANCE vs.
AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3.0
PT - Total Power Dissipation - W
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
–50
0
50
100
150
VFB - Flyback Detection Voltage - V
2.0
1 unit
1.5
1.0
0.5
0
50
100
150
Ta - Ambient Temperature - °C
Ta - Ambient Temperature - °C
FLYBACK DETECTION VOLTAGE vs.
AMBIENT TEMPERATURE
DIAG ON-STATE RESISTANCE vs.
AMBIENT TEMPERATURE
90
80
70
60
50
40
30
–50
2.5 2 units
0
–50
200
0
50
100
150
200
Ta - Ambient Temperature - °C
RDIAG(ON) - DIAG On-state Resistance - kΩ
RDS(ON) - On-state Resistance - Ω
0.16
200
1.0
0.8
0.6
VCC = 6 V
0.4
VCC = 16 V
0.2
0
–50
0
50
100
150
200
Ta - Ambient Temperature - °C
IDIAGLEAK - DIAG Leakage Current - μA
DIAG LEAKAGE CURRENT vs.
AMBIENT TEMPERATURE
60
50
40
30
20
10
0
–50
0
50
100
150
200
Ta - Ambient Temperature - °C
R07DS0604EJ0100 Rev.1.00
Jan 19, 2012
Page 10 of 15
PD166105GS
Transient Thermal Resistance Characteristics
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(t) - Transient Thermal Resistance - °C/W
1000
Device on 50 mm × 50 mm × 1.6 mm epoxy PCB FR4
with 600 mm2 of 70 μm copper area
100
Rth(ch-a) = 62.5°C/W
Rth(ch-c) = 16.5°C/W
10
1
0.1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Application Example 1
VBAT
Rin: ex. 470 Ω
R1: ex. 1 kΩ
Q1: ex. Part No. GN4N2M(0)-T1-AT
VCC1
VCC2
Injector
Rin
IN1
Rin
Rin
OUT1
DIAG1
μPD166105
Injector
IN2
DIAG2
Rin
GND1
OUT2
GND2
Power GND
5V
Micro
computer
VCC1
Q1
IN1
VCC2
OUT1
DIAG1
μPD166105
R1
Injector
IN2
DIAG2
GND1
GND
Injector
OUT2
GND2
Power GND
Caution: This application circuit is example and not intended for use in actual mass production design.
R07DS0604EJ0100 Rev.1.00
Jan 19, 2012
Page 11 of 15
PD166105GS
Application Example 2
VBAT
Rin: ex. 470 Ω
VCC1
VCC2
Injector
Rin
IN1
Rin
OUT1
DIAG1
μPD166105
Rin
Injector
IN2
DIAG2
Rin
GND1
OUT2
GND2
Power GND
5V
Micro
computer
R1
R2
VCC1
IN1
VCC2
Injector
OUT1
DIAG1
μPD166105
Injector
IN2
DIAG2
GND1
GND
OUT2
GND2
Power GND
Caution: This application circuit is example and not intended for use in actual mass production design.
R07DS0604EJ0100 Rev.1.00
Jan 19, 2012
Page 12 of 15
PD166105GS
Package Drawing
20-Pin Plastic SOP (7.62 mm (300))
20
11
detail of lead end
3° +7°
–3°
1
10
12.7±0.3
7.7±0.3
5.6±0.2
1.55±0.05
1.1
S
1.27
0.42+0.08
–0.07
0.78 MAX.
0.12 M
0.6±0.2
0.22+0.08
–0.07
0.10 S
0.1±0.1
1.8 MAX.
R07DS0604EJ0100 Rev.1.00
Jan 19, 2012
Page 13 of 15
PD166105GS
Taping Information
There are two types (E1, E2) of directions of the device in the career tape.
E1: Pin 1 of the device faces toward
the open end of the tape, away
from the reel
Pin 1 indication
Tape drawout direction
E2: Pin 1 of the device faces away
from the open end of the tape,
toward the reel
Pin 1 indication
Marking Information
This figure indicates the marking items and arrangement. However, details of the letterform, the size and the position
aren't indicated.
D166105GS
JAPAN
Pin 1 indication
R07DS0604EJ0100 Rev.1.00
Jan 19, 2012
Part No.
Lot number
Lead-free mark
Page 14 of 15
PD166105GS
Recommended Soldering Conditions
The PD166105 should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, contact a Renesas Electronics sales
representative.
For technical information, see the following website.
Semiconductor Package Mount Manual (http://www.renesas.com/prod/package/manual/)
 PD166105GS-E1-AY: 20-pin plastic SOP (7.62 mm (300))
 PD166105GS-E2-AY: 20-pin plastic SOP (7.62 mm (300))
Soldering Method
Soldering Conditions
Infrared reflow
Peak package's surface temperature: 260°C, Reflow time: 60 seconds or less
(220°C or higher), Maximum allowable number of reflow processes: 3, Exposure
Note
: 7 days (10 to 72 hours pre-backing is required at 125°C afterwards),
limit
Flux: Rosin flux with low chlorine (0.2 Wt% or below) recommended.
<Caution>
Non-heat-resistant trays, such as magazine and taping trays, cannot be baked
before unpacking.
Partial Heating
Method
Pin temperature: 350°C or below,
Heat time: 3 seconds or less (per each side of the device),
Flux: Rosin flux with low chlorine (0.2 Wt% or below) recommended.
Note:
Symbol
IR60-107-3
—
The Maximum number of days during which the product can be stored at a temperature of 5 to 25°C and a
relative humidity of 20 to 65% after dry-pack package is opened.
R07DS0604EJ0100 Rev.1.00
Jan 19, 2012
Page 15 of 15
PD166105GS Data Sheet
Revision History
Rev.
1.00
Date
Jan 19, 2012
Description
Summary
Page
—
First Edition Issued
All trademarks and registered trademarks are the property of their respective owners.
C-1
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SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
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