Preliminary Datasheet RJK5002DPD 500V - 2.4A - MOS FET High Speed Power Switching R07DS0866EJ0100 Rev.1.00 Aug 08, 2012 Features Low on-state resistance RDS(on) = 3.83 typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) D 4 1. 2. 3. 4. G 12 3 Gate Drain Source Drain S Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. 2. 2. 4. Symbol VDSS VGSS ID Note1 ID(pulse) Note2 IDR Note1 IDR(pulse) Note2 IAP Note3 Pch Note4 ch-c Tch Tstg Value 500 30 2.4 4.8 2.4 4.8 2.4 30 4.17 150 –55 to +150 Unit V V A A A A A W C/W C C Limited by Tch max. Pulse width limited by safe operating area. STch = 25C, Tch 150C Value at Tc = 25C R07DS0866EJ0100 Rev.1.00 Aug 08, 2012 Page 1 of 6 RJK5002DPD Preliminary Electrical Characteristics (Ta = 25C) Item Symbol Min 500 Typ — Max — Unit V — — — 3.83 1 0.1 4.5 5.00 A A V VDS = 500 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 1.2 A, VGS = 10 V Note5 VDS = 25 V VGS = 0 f = 1 MHz Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage V(BR)DSS Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge RDS(on) — — 3.5 — Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd — — — — — — — — — — 165 21 2.6 11 12 22 22 6.7 1.3 3.8 — — — — — — — — — — pF pF pF ns ns ns ns nC nC nC VDF — — 0.9 235 1.5 — V ns Body-drain diode forward voltage Body-drain diode reverse recovery time Note: IDSS IGSS VGS(off) trr Test Conditions ID = 10 mA, VGS = 0 ID = 1.2 A VGS = 10 V RL = 208 Rg = 10 VDD = 400 V VGS = 10 V ID = 2.4 A IF = 2.4 A, VGS = 0 Note5 IF = 2.4 A, VGS = 0 VDD = 400 V diF/dt = 100 A/s 5. Pulse test 6. Since this device is equipped with high voltage FET chip (VDSS 500 V), high voltage may be supplied. Therefore, please be sure to confirm about electric discharge between drain terminal and other terminal. 7. This device is sensitive to electrostatic discharge. It is recommended to adopt appropriate cautions when handling this product. R07DS0866EJ0100 Rev.1.00 Aug 08, 2012 Page 2 of 6 RJK5002DPD Preliminary Main Characteristics Typical Output Characteristics Maximum Safe Operation Area 4 100 10 μ s 0 Drain Current 10 μs 0.1 Operation in this area is limited by RDS(on) 0.01 0.001 0.1 1 100 10 0 Drain to Source on State Resistance RDS(on) (Ω) 1 Ta = 75°C 25°C −25°C 0.01 0.001 2 4 6 8 Gate to Source Voltage 10 12 16 20 VDS (V) VGS = 10 V Ta = 25°C Pulse Test 10 1 0.1 1 Drain Current VGS (V) 10 ID (A) Body-Drain Diode Reverse Recovery Time (Typical) 16 1000 VGS = 10 V Ta = 25°C Pulse Test ID = 2.4 A 8 0.6 A 4 1.2 A 0 −25 8 100 Static Drain to Source on State Resistance vs. Temperature (Typical) 12 4 Drain to Source Voltage Reverse Recovery Time trr (ns) ID (A) 1 Static Drain to Source on State Resistance vs. Drain Current (Typical) VDS = 10 V Pulse Test 0 5.4 V VDS (V) 10 0.1 5.8 V 2 0 1000 Typical Transfer Characteristics Drain Current 3 VGS = 5 V Tc = 25°C 1 shot Drain to Source Voltage Static Drain to Source on State Resistance RDS(on) (Ω) 7V 10 V = 1 Drain Current ID (A) 10 PW ID (A) Ta = 25°C Pulse Test 100 di/dt = 100 A/μs VGS = 0, Ta = 25°C 10 0 25 50 75 Case Temperature R07DS0866EJ0100 Rev.1.00 Aug 08, 2012 100 125 150 Tc (°C) 1 3 Reverse Drain Current 10 IDR (A) Page 3 of 6 RJK5002DPD Preliminary Typical Capacitance vs. Drain to Source Voltage Ciss 100 Coss 10 Crss 1 0 50 100 150 200 Drain to Source Voltage 250 800 600 400 12 VDS 4 VDD = 400 V 250 V 100 V 0 0 0 2 VDS (V) 4 6 Gate Charge 8 10 Qg (nC) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 5 8 Gate to Source Cutoff Voltage VGS(off) (V) IDR (A) VDD = 100 V 250 V 8 400 V 200 Reverse Drain Current vs. Source to Drain Voltage (Typical) Reverse Drain Current 16 VGS ID = 2.4 A Ta = 25°C VGS (V) Ta = 25°C Drain to Source Voltage Capacitance C (pF) VGS = 0 f = 1 MHz Gate to Source Voltage 1000 VDS (V) Dynamic Input Characteristics (Typical) 4 3 2 VGS = 0 Ta = 25°C Pulse Test 1 0 0 0.4 0.8 1.2 Source to Drain Voltage R07DS0866EJ0100 Rev.1.00 Aug 08, 2012 1.6 2.0 VSD (V) 6 ID = 10 mA 4 1 mA 0.1 mA 2 VDS = 10 V 0 −25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Page 4 of 6 RJK5002DPD Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 Tc = 25°C 1 D=1 0.5 0.2 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 4.17°C/W, Tc = 25°C 0.1 0.05 0.1 0.02 PDM 0.01 1shot pulse 0.01 100 μ D= PW T PW T 1m 10 m 100 m Pulse Width 1 10 100 PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V Vin Vout 10% 10% 10% VDD = 250 V 90% td(on) R07DS0866EJ0100 Rev.1.00 Aug 08, 2012 tr 90% td(off) tf Page 5 of 6 RJK5002DPD Preliminary Package Dimensions Previous Code TMP3 0.76 ± 0.2 Unit: mm 2.3 0.5 ± 0.2 2.5Min 1Max 6.1 ± 0.2 6.6 5.3 ± 0.2 MASS[Typ.] 0.32g 0.76 0.1 ± 0.1 1.4 ± 0.2 RENESAS Code PRSS0004ZG-A 1 ± 0.2 JEITA Package Code SC-63 10.4Max Package Name MP-3A 0.5 ± 0.2 1 2.3 2.3 ± 0.2 Ordering Information Orderable Part No. RJK5002DPD-00#J2 R07DS0866EJ0100 Rev.1.00 Aug 08, 2012 Quantity 3000 pcs Shipping Container Taping Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. 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