RENESAS RJK2076DPA

Preliminary Datasheet
RJK2076DPA
200V - 20A - MOS FET
High Speed Power Switching
R07DS0859EJ0200
Rev.2.00
Jan 08, 2013
Features
 Low on-resistance
RDS(on) = 0.068  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
 Very low gate charge
Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25C)
 Low leakage current
 High speed switching
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5 6 7 8
D D D D
5 6 7 8
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
4
G
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Symbol
VDSS
VGSS
Note4
ID
Note1
ID (pulse)
IDR
IDR (pulse)Note1
IAPNote2
EARNote2
Pch Note3
ch-c
Tch
Tstg
Ratings
200
±30
20
40
20
40
9
5.4
65
1.93
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
PW  10 s, duty cycle  1%
STch = 25C, Tch  150C
Value at Tc = 25C
Limited by maximum safe operation area
R07DS0859EJ0200 Rev.2.00
Jan 08, 2013
Page 1 of 6
RJK2076DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Min
200
—
—
2.5
—
Typ
—
—
—
—
0.068
Max
—
1
±1
4.5
0.085
Unit
V
A
A
V

Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
—
—
—
—
—
—
—
—
—
—
—
1200
200
30
17
18
25
12
19
6
6
0.82
—
—
—
—
—
—
—
—
—
—
1.35
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
trr
—
123
—
ns
Test conditions
ID = 10 mA, VGS = 0
VDS = 200 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 10 A, VGS = 10 V Note5
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 10 A
VGS = 10 V
RL = 10 
Rg = 10 
VDD = 160 V
VGS = 10 V
ID = 20 A
IF = 20 A, VGS = 0 Note5
IF = 20 A, VGS = 0
diF/dt = 100 A/s
Notes: 5. Pulse test
R07DS0859EJ0200 Rev.2.00
Jan 08, 2013
Page 2 of 6
RJK2076DPA
Preliminary
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
40
10
Drain Current ID (A)
100
μs
PW
10
=1
00
1
μs
Drain Current ID (A)
1000
Operation in this area
is limited by RDS(on)
0.1
1
10
100
7V
5.8 V
20
5.4 V
10
0
2
4
6
8
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
RDS(on) (Ω)
10
Tc = 75°C
1
25°C
−25°C
0.1
0.01
0
2
4
6
1
VGS = 10 V
Ta = 25°C
Pulse Test
0.1
0.01
8
1
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
Body-Drain Diode Reverse
Recovery Time (Typical)
0.30
100
1000
VGS = 10 V
Pulse Test
0.20
20 A
ID = 40 A
0.15
0.10
10 A
0.05
0
−25
Reverse Recovery Time trr (ns)
0.25
10
Drain to Source Voltage VDS (V)
VDS = 10 V
Pulse Test
Drain Current ID (A)
6.2 V
10 V
0
1000
100
Static Drain to Source on State Resistance
RDS(on) (Ω)
30
6.5 V
VGS = 5 V
Tc = 25°C
1 shot
0.01
0.1
Ta = 25°C
Pulse Test
100
di/dt = 100 A/μs
VGS = 0, Ta = 25°C
10
0
25
50
75
100 125 150
Case Temperature Tc (°C)
R07DS0859EJ0200 Rev.2.00
Jan 08, 2013
1
10
100
Reverse Drain Current IDR (A)
Page 3 of 6
RJK2076DPA
Preliminary
Typical Capacitance vs.
Drain to Source Voltage (Typical)
Ta = 25°C
VGS = 0
f = 1 MHz
Ciss
1000
Coss
100
Crss
10
Reverse Drain Current IDR (A)
40
20
40
60
80
200
VDD = 160 V
100 V
50 V
VDS
100
0
10
0
20
30
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
20
10
0
0.4
0.8
1.2
1.6
Source to Drain Voltage VSD (V)
R07DS0859EJ0200 Rev.2.00
Jan 08, 2013
6
8
4
VDD = 160 V
100 V
50 V
Gate Charge Qg (nC)
30
16
12
Drain to Source Voltage VDS (V)
VGS = 0
Ta = 25°C
Pulse Test
0
VGS
ID = 20 A
Ta = 25 °C
300
100
Gate to Source Cutoff Voltage VGS(off) (V)
0
400
0
40
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Capacitance C (pF)
10000
Dynamic Input Characteristics (Typical)
VDS = 10 V
5
ID = 10 mA
4
3
1 mA
0.1 mA
2
1
0
−25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Page 4 of 6
RJK2076DPA
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D=1
0.5
0.3
0.2
0.1
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 1.93°C/W, Tc = 25°C
0.05
0.0
2
0.03
1
0.0
0.01
10 μ
PDM
1s
h
p
ot
ul
D=
se
PW
T
PW
T
100 μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
Vin
Vout
10%
10%
10%
VDD
= 100 V
90%
td(on)
R07DS0859EJ0200 Rev.2.00
Jan 08, 2013
tr
90%
td(off)
tf
Page 5 of 6
RJK2076DPA
Preliminary
Package Dimensions
JEITA Package Code
⎯
RENESAS Code
PWSN0008DE-A
Previous Code
WPAK(3F)V
MASS[Typ.]
0.075g
0.85Max
5.1 ± 0.2
Unit: mm
0.5 ± 0.15
Package Name
WPAK(3F)
4.23Typ
1.27Typ
1.27Typ
0.21Typ
0.5 ± 0.15
+0.1
-0.2
5.9
+0.1
-0.3
6.1
0.05Max
0Min
Stand-off
0.545Typ
3.6 ± 0.2
3.92 ± 0.22
0.42 ± 0.08
4.90 ± 0.1
Notice:The reverse pattern of die-pad
support lead described above exists.
Ordering Information
Orderable Part Number
RJK2076DPA-00#J5A
R07DS0859EJ0200 Rev.2.00
Jan 08, 2013
Quantity
3000 pcs
Shipping Container
Taping
Page 6 of 6
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Colophon 2.2