Preliminary Datasheet RJK2076DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0859EJ0200 Rev.2.00 Jan 08, 2013 Features Low on-resistance RDS(on) = 0.068 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C) Very low gate charge Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5 6 7 8 D D D D 5 6 7 8 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS Note4 ID Note1 ID (pulse) IDR IDR (pulse)Note1 IAPNote2 EARNote2 Pch Note3 ch-c Tch Tstg Ratings 200 ±30 20 40 20 40 9 5.4 65 1.93 150 –55 to +150 Unit V V A A A A A mJ W C/W C C PW 10 s, duty cycle 1% STch = 25C, Tch 150C Value at Tc = 25C Limited by maximum safe operation area R07DS0859EJ0200 Rev.2.00 Jan 08, 2013 Page 1 of 6 RJK2076DPA Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Min 200 — — 2.5 — Typ — — — — 0.068 Max — 1 ±1 4.5 0.085 Unit V A A V Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF — — — — — — — — — — — 1200 200 30 17 18 25 12 19 6 6 0.82 — — — — — — — — — — 1.35 pF pF pF ns ns ns ns nC nC nC V trr — 123 — ns Test conditions ID = 10 mA, VGS = 0 VDS = 200 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 10 A, VGS = 10 V Note5 VDS = 25 V VGS = 0 f = 1 MHz ID = 10 A VGS = 10 V RL = 10 Rg = 10 VDD = 160 V VGS = 10 V ID = 20 A IF = 20 A, VGS = 0 Note5 IF = 20 A, VGS = 0 diF/dt = 100 A/s Notes: 5. Pulse test R07DS0859EJ0200 Rev.2.00 Jan 08, 2013 Page 2 of 6 RJK2076DPA Preliminary Main Characteristics Typical Output Characteristics Maximum Safe Operation Area 40 10 Drain Current ID (A) 100 μs PW 10 =1 00 1 μs Drain Current ID (A) 1000 Operation in this area is limited by RDS(on) 0.1 1 10 100 7V 5.8 V 20 5.4 V 10 0 2 4 6 8 Drain to Source Voltage VDS (V) Typical Transfer Characteristics Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source on State Resistance RDS(on) (Ω) 10 Tc = 75°C 1 25°C −25°C 0.1 0.01 0 2 4 6 1 VGS = 10 V Ta = 25°C Pulse Test 0.1 0.01 8 1 10 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature (Typical) Body-Drain Diode Reverse Recovery Time (Typical) 0.30 100 1000 VGS = 10 V Pulse Test 0.20 20 A ID = 40 A 0.15 0.10 10 A 0.05 0 −25 Reverse Recovery Time trr (ns) 0.25 10 Drain to Source Voltage VDS (V) VDS = 10 V Pulse Test Drain Current ID (A) 6.2 V 10 V 0 1000 100 Static Drain to Source on State Resistance RDS(on) (Ω) 30 6.5 V VGS = 5 V Tc = 25°C 1 shot 0.01 0.1 Ta = 25°C Pulse Test 100 di/dt = 100 A/μs VGS = 0, Ta = 25°C 10 0 25 50 75 100 125 150 Case Temperature Tc (°C) R07DS0859EJ0200 Rev.2.00 Jan 08, 2013 1 10 100 Reverse Drain Current IDR (A) Page 3 of 6 RJK2076DPA Preliminary Typical Capacitance vs. Drain to Source Voltage (Typical) Ta = 25°C VGS = 0 f = 1 MHz Ciss 1000 Coss 100 Crss 10 Reverse Drain Current IDR (A) 40 20 40 60 80 200 VDD = 160 V 100 V 50 V VDS 100 0 10 0 20 30 Reverse Drain Current vs. Source to Drain Voltage (Typical) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 20 10 0 0.4 0.8 1.2 1.6 Source to Drain Voltage VSD (V) R07DS0859EJ0200 Rev.2.00 Jan 08, 2013 6 8 4 VDD = 160 V 100 V 50 V Gate Charge Qg (nC) 30 16 12 Drain to Source Voltage VDS (V) VGS = 0 Ta = 25°C Pulse Test 0 VGS ID = 20 A Ta = 25 °C 300 100 Gate to Source Cutoff Voltage VGS(off) (V) 0 400 0 40 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Capacitance C (pF) 10000 Dynamic Input Characteristics (Typical) VDS = 10 V 5 ID = 10 mA 4 3 1 mA 0.1 mA 2 1 0 −25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Page 4 of 6 RJK2076DPA Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 Tc = 25°C D=1 0.5 0.3 0.2 0.1 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 1.93°C/W, Tc = 25°C 0.05 0.0 2 0.03 1 0.0 0.01 10 μ PDM 1s h p ot ul D= se PW T PW T 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V Vin Vout 10% 10% 10% VDD = 100 V 90% td(on) R07DS0859EJ0200 Rev.2.00 Jan 08, 2013 tr 90% td(off) tf Page 5 of 6 RJK2076DPA Preliminary Package Dimensions JEITA Package Code ⎯ RENESAS Code PWSN0008DE-A Previous Code WPAK(3F)V MASS[Typ.] 0.075g 0.85Max 5.1 ± 0.2 Unit: mm 0.5 ± 0.15 Package Name WPAK(3F) 4.23Typ 1.27Typ 1.27Typ 0.21Typ 0.5 ± 0.15 +0.1 -0.2 5.9 +0.1 -0.3 6.1 0.05Max 0Min Stand-off 0.545Typ 3.6 ± 0.2 3.92 ± 0.22 0.42 ± 0.08 4.90 ± 0.1 Notice:The reverse pattern of die-pad support lead described above exists. Ordering Information Orderable Part Number RJK2076DPA-00#J5A R07DS0859EJ0200 Rev.2.00 Jan 08, 2013 Quantity 3000 pcs Shipping Container Taping Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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