Preliminary Datasheet RJK4002DJE 400V - 3A - MOS FET High Speed Power Switching R07DS0842EJ0200 Rev.2.00 Aug 03, 2012 Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) D 1. Source 2. Drain 3. Gate G 32 S 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal Impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS ID Note1 ID(pulse) Note4 IDR Note1 IDR(pulse) Note4 IAPNote3 EARNote3 Note 2 Pch ch-a Tch Tstg Value 400 30 3 6 3 6 2.5 0.357 Unit V V A A A A A mJ 2.54 49.2 150 –55 to +150 W C/W C C Limited by Tch max. Value at Tc = 25C STch = 25C, Tch 150C Pulse width limited by safe operating area. R07DS0842EJ0200 Rev.2.00 Aug 03, 2012 Page 1 of 6 RJK4002DJE Preliminary Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 400 — — 3.5 — — — — — — — — — — — — — Typ — — — — 2.4 165 25 2.6 11 12 23 20 6.0 1.2 3.4 0.9 200 Max — 1 0.1 4.5 2.9 — — — — — — — — — — 1.5 — Unit V A A V pF pF pF ns ns ns ns nC nC nC V ns Test Conditions ID = 10 mA, VGS = 0 VDS = 400 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 1.5 A, VGS = 10 V Note 5 VDS = 25 V VGS = 0 f = 1 MHz ID = 1.5 A VGS = 10 V RL = 133 Rg = 10 VDD = 320 V VDS = 100 V ID = 3 A IF = 3 A, VGS = 0 Note 5 IF = 3 A, VGS = 0 diF/dt = 100 A/s 5. Pulse test 6. Since this device is equipped with high voltage FET chip (VDSS 400 V), high voltage may be supplied. Therefore, please be sure to confirm about electric discharge between drain terminal and other terminal. 7. This device is sensitive to electrostatic discharge. It is recommended to adopt appropriate cautions when handling this product. R07DS0842EJ0200 Rev.2.00 Aug 03, 2012 Page 2 of 6 RJK4002DJE Preliminary Main Characteristics Typical Output Characteristics Maximum Safe Operation Area 5 100 10 PW = Drain Current 1 0.1 10 0 ID (A) 10 μs μs Operation in this area is limited by RDS(on) 0.01 0.001 0.1 Tc = 25°C 1 shot 1 100 10 Drain to Source Voltage −25°C 0.01 0.001 6 Static Drain to Source on State Resistance RDS(on) (Ω) Gate to Source Voltage 5.6 V 2 5.4 V 5.2 V VGS = 5 V 1 8 12 16 20 VDS (V) 1 VGS = 10 V Ta = 25°C Pulse Test 0.1 0.1 1 Drain Current VGS (V) 10 ID (A) Body-Drain Diode Reverse Recovery Time (Typical) 10 1000 VGS = 10 V Ta = 25°C Pulse Test 6 ID = 3 A 4 1.5 A 2 0 −25 8 10 Static Drain to Source on State Resistance vs. Temperature (Typical) 8 4 Drain to Source Voltage Drain to Source on State Resistance RDS(on) (Ω) 25°C 4 5.8 V 0 0 25 50 75 Case Temperature R07DS0842EJ0200 Rev.2.00 Aug 03, 2012 100 125 150 Tc (°C) Reverse Recovery Time trr (ns) ID (A) Drain Current 1 2 6V Static Drain to Source on State Resistance vs. Drain Current (Typical) VDS = 10 V Pulse Test 0 10 V VDS (V) 10 Tc = 75°C 7V 4 0 1000 Typical Transfer Characteristics 0.1 6.2 V 6.4 V 3 Drain Current ID (A) Ta = 25°C Pulse Test 100 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 0.1 1 Reverse Drain Current 10 IDR (A) Page 3 of 6 RJK4002DJE Preliminary Typical Capacitance vs. Drain to Source Voltage Ciss 100 Coss 10 Crss Tc = 25°C 1 0 40 80 120 Drain to Source Voltage 160 200 800 600 400 12 200 4 VDD = 320 V 200 V 100 V 0 0 0 2 VDS (V) 4 6 Gate Charge 8 10 Qg (nC) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 5 5.0 VGS = 0 Ta = 25°C Pulse Test 4 Gate to Source Cutoff Voltage VGS(off) (V) IDR (A) VDD = 100 V 200 V 8 320 V VDS Reverse Drain Current vs. Source to Drain Voltage (Typical) Reverse Drain Current 16 VGS ID = 3 A Ta = 25°C Gate to Source Voltage Capacitance C (pF) VGS = 0 f = 1 MHz Drain to Source Voltage VDS (V) 1000 VGS (V) Dynamic Input Characteristics (Typical) 3 2 1 0 0 0.4 0.8 1.2 Source to Drain Voltage R07DS0842EJ0200 Rev.2.00 Aug 03, 2012 1.6 2.0 VSD (V) 4.5 ID = 10 mA 4.0 3.5 1 mA 3.0 0.1 mA 2.5 VDS = 10 V 2.0 -25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Page 4 of 6 RJK4002DJE Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 49.2°C/W, Tc = 25°C 0.02 0.01 0.01 o 1sh t pu lse PDM D= PW T PW T 0.001 10 μ 100 μ 1m 10 m Pulse Width 100 m 1 10 100 PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V Vin Vout 10% 10% 10% VDD = 200 V 90% td(on) R07DS0842EJ0200 Rev.2.00 Aug 03, 2012 tr 90% td(off) tf Page 5 of 6 RJK4002DJE Preliminary Package Dimensions Package Name TO-92 Mod JEITA Package Code SC-51 RENESAS Code PRSS0003DC-A Previous Code TO-92 Mod / TO-92 ModV MASS[Typ.] 0.35g 4.8 ± 0.4 Unit: mm 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55 Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5 Max 1.27 2.54 Ordering Information Orderable Part No. RJK4002DJE-00#Z0 Note: Quantity Shipping Container Hold Box, Radial Taping 2500 pcs Leads is forming applied as following figure. Unit: mm 18.0 9.0 19.0 16.0 28.0 max. 12.7 2.5 2.5 6.35 12.7 R07DS0842EJ0200 Rev.2.00 Aug 03, 2012 4.0 Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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