Preliminary Datasheet RJK1008DPP-E0 R07DS0798EJ0100 Rev.1.00 Jun 08, 2012 N-Channel Power MOSFET High-Speed Switching Use Features VDSS : 100 V RDS(on) : 11 m (Max) ID : 80 A Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) 2 D 1. Gate 2. Drain 3. Source 1G 1 2 3 S 3 Application Motor control, Lighting control, Solenoid control, DC-DC converter, etc. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) Ratings 100 ±20 80 160 80 160 Unit V V A A A A Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature IAP Note2 Pch Note1 ch-c Tch Tstg 40 45 2.78 150 –55 to +150 A W C/W C C Notes: 1. Value at Tc = 25C 2. STch = 25C, Tch 150C, L = 100 H R07DS0798EJ0100 Rev.1.00 Jun 08, 2012 Page 1 of 6 RJK1008DPP-E0 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IDSS IGSS VGS(off) VDS(on) RDS(on) Min 100 — — 2.0 — — Typ — — — 3.0 0.34 8.5 Max — 100 ±0.1 4.0 0.44 11 Unit V A A V V m Ciss Coss Crss td(on) tr td(off) tf VDF trr — — — — — — — — — 5200 820 220 52 100 230 125 0.9 70 — — — — — — — 1.5 — pF pF pF ns ns ns ns V ns Test conditions ID = 1 mA, VGS = 0 VDS = 100 V, VGS = 0 VGS = 20 V, VDS = 0 ID = 1 mA, VDS = 10 V Note3 ID = 40 A, VGS = 10 V Note3 ID = 40 A, VGS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V ID = 40 A VGS = 10 V RG = 25 IF = 40 A, VGS = 0 IF = 80 A, VGS = 0 diF/dt = 100 A/s Notes: 3. Pulse test R07DS0798EJ0100 Rev.1.00 Jun 08, 2012 Page 2 of 6 RJK1008DPP-E0 Preliminary Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 Drain Current ID (A) 40 30 20 10 Ta = 25°C 0 10 μs DC Operation (Tc = 25°C) 1 PW = 10 ms (1shot) 0.1 Operation in this 50 100 150 0.01 0.1 200 Case Temperature Tc (°C) 1 100 10 1000 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 100 100 10 V 7V 80 VDS = 10 V Pulse Test 4.4 V 60 40 VGS = 4.0 V 20 Drain Current ID (A) Drain Current ID (A) μs area is limited by RDS(on) 0 80 60 40 Tc = 75°C 20 25°C −25°C Pulse Test 0 2 4 6 8 0 10 1 2 3 4 5 6 7 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source on State Resistance vs. Gate to Source Voltage Drain to Source on State Resistance vs. Drain Current 20 Pulse Test 15 40 A 10 A 10 5 ID = 80 A 0 5 10 15 20 Gate to Source Voltage VGS (V) R07DS0798EJ0100 Rev.1.00 Jun 08, 2012 Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source on State Resistance RDS(on) (mΩ) 10 10 100 s 1m Channel Dissipation Pch (W) 50 100 VGS = 10 V Pulse Test 10 1 1 10 100 Drain Current ID (A) Page 3 of 6 RJK1008DPP-E0 Preliminary Forward Transfer Admittance |yfs| (S) 20 VGS = 10 V Pulse Test 16 12 40 A ID = 80 A 10 A 8 4 0 −25 0 25 50 75 100 125 150 1000 10 75°C 1 VDS = 10 V Pulse Test 0.1 0.1 1 10 100 Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage ID (A) 10000 Capacitance C (pF) Ciss 1000 Coss Crss 100 di / dt = −100 A / μs VGS = 0, Ta = 25°C 1 10 VGS = 0 f = 1 MHz 10 0.1 100 1 10 100 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 16 VDD = 25 V 50 V 80 V VGS 120 12 VDS 8 40 4 VDD = 80 V 50 V 25 V 40 80 ID = 80 A 120 160 Gate Charge Qg (nC) R07DS0798EJ0100 Rev.1.00 Jun 08, 2012 0 200 1000 Switching Time t (ns) 160 0 25°C Drain Current 100 80 Tc = −25°C 100 Case Temperature Tc (°C) 10 0.1 Drain to Source Voltage VDS (V) Forward Transfer Admittance vs. Drain Current Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source on State Resistance vs. Temperature VGS = 10 V, VDD = 50 V PW = 5 μs, duty ≤ 1 % RG = 25 Ω td(off) tf 100 tr td(on) 10 0.1 1 10 100 Drain Current ID (A) Page 4 of 6 RJK1008DPP-E0 Preliminary Reverse Drain Current vs. Source to Drain Voltage Avalanche Current vs.Case Temperature 50 Pulse Test Avalanche Current IAP (A) Reverse Drain Current IDR (A) 100 10 V 80 5V 60 40 VGS = 0 V, -5 V 20 0 0.4 0.8 1.2 1.6 40 30 20 10 0 25 2.0 L = 100 μH Source to Drain Voltage VSD (V) 50 75 100 125 150 175 200 Case Temperature Tc (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10.0 3 1 D=1 0.5 0.3 0.2 θch – c(t) = γs (t) • θch – c θch – c = 2.78°C/W, Tc = 25°C 0.1 0.1 0.05 0.02 0.03 PDM 0.01 T 1m 10 m Pulse Width 100 m 1 Waveform 90% Vout Monitor Vin Monitor D.U.T. RL 25 Ω Vin Vout VDD = 80 V 10% 10% 90% td(on) R07DS0798EJ0100 Rev.1.00 Jun 08, 2012 10 PW (s) Switching Time Test Circuit Vin 10 V PW T PW 1shot pulse 0.01 100 μ D= tr 10% 90% td(off) tf Page 5 of 6 RJK1008DPP-E0 Preliminary Package Dimensions Package Name TO-220FP JEITA Package Code RENESAS Code PRSS0003AG-A Previous Code MASS[Typ.] 1.9g Unit: mm 10.16 ± 0.20 2.54 ± 0.20 6.68 ± 0.20 3.3 ± 0.2 1.28 ± 0.30 3.18 ± 0.20 12.98 ± 0.30 15.87 ± 0.20 3.18 ± 0.10 Max 1.47 2.76 ± 0.20 0.80 ± 0.20 0.50 4.7 ± 0.2 5.08 ± 0.20 Ordering Information Orderable Part Number RJK1008DPP-E0-T2 Note: Quantity 50 pcs Shipping Container Magazine (Tube) The symbol of 2nd "-" is occasionally presented as "#". R07DS0798EJ0100 Rev.1.00 Jun 08, 2012 Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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