RENESAS RJK60S2DPP-E0

Preliminary Datasheet
RJK60S2DPP-E0
600V - 10A - SJ MOS FET
High Speed Power Switching
R07DS0742EJ0004
Rev.0.04
Jan 21, 2013
Features
 Superjunction MOSFET
 Low on-resistance
RDS(on) = 0.53  typ. (at ID = 4 A, VGS = 10 V, Ta = 25C)
 High speed switching
tf = 33 ns typ. (at ID = 4 A, VGS = 10 V, RL = 75 , Rg = 10 , Ta = 25C)
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
D
1. Gate
2. Drain
3. Source
G
1
S
2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25C
Tc = 100C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Symbol
VDSS
VGSS
ID Note1,2
ID Note1,2
ID (pulse)Note1
IDR Note1
IDR (pulse)Note1
Note3
IAP
Note3
EAR
Pch Note4
ch-c
Tch
Tstg
Ratings
600
+30, 20
10
6.3
20
10
20
Unit
V
V
A
A
A
A
A
2
0.21
26.3
4.75
150
–55 to +150
A
mJ
W
C/W
C
C
Limited by Tch max.
Maximum duty cycle D = 0.75
STch = 25C, Tch  150C
Value at Tc = 25C
R07DS0742EJ0004 Rev.0.04
Jan 21, 2013
Page 1 of 6
RJK60S2DPP-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
RDS(on)
Min
600
—
—
3
—
—
Typ
—
—
—
—
0.53
1.27
Max
—
1
±0.1
5
0.67
—
Unit
V
mA
A
V


Rg
—
2.7
—

f = 1 MHz
VDS = 25 V, VGS = 0
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
—
—
—
—
—
—
—
—
530
715
2.8
11
17
22
33
1.0
—
—
—
—
—
—
—
1.6
pF
pF
pF
ns
ns
ns
ns
V
VDS = 25 V
VGS = 0
f = 100 kHz
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode reverse recovery time
Qg
Qgs
Qgd
trr
11.6
2.8
4.9
280
16.5
—
—
—
—
—
nC
nC
nC
ns
A
2.5
—
C
Static drain to source on state
resistance
Gate resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Body-drain diode reverse recovery
current
Irr
—
—
—
—
—
Body-drain diode reverse recovery
charge
Qrr
—
Test conditions
ID = 10 mA, VGS = 0
VDS = 600 V, VGS = 0
VGS = +30V, 20 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 4 A, VGS = 10 V Note 5
Ta = 150C
Note 5
ID = 4 A, VGS = 10 V
ID = 4 A
VGS = 10 V
RL = 75 
Note 5
Rg = 10 
IF = 8 A, VGS = 0 Note5
VDD = 480 V
VGS = 10 V
Note5
ID = 1 A
IF = 8 A
VGS = 0
Note5
diF/dt = 100 A/s
Notes: 5. Pulse test
R07DS0742EJ0004 Rev.0.04
Jan 21, 2013
Page 2 of 6
RJK60S2DPP-E0
Preliminary
Main Characteristics
Channel Dissipation vs.
Case Temperature
Typical Output Characteristics
16
ID (A)
Ta = 25°C
Pulse Test
30
20
10
15 V
8
6.5 V
6V
4
VGS = 5.5 V
0
0
25
50
75
100 125 150 175
0
2
10 V
6
15 V
6V
4
5.5 V
2
0
8
10
VDS (V)
100
6.5 V
VGS = 5 V
VDS = 10 V
Pulse Test
Drain Current ID (A)
8V
7V
10
Tc = 75°C
1
25°C
−25°C
0.1
0.01
0
2
4
6
8
Drain to Source Voltage
10
Ta = 125°C
25°C
1
VGS = 10 V
Pulse Test
1
10
Drain Current
R07DS0742EJ0004 Rev.0.04
Jan 21, 2013
100
ID (A)
2
4
6
8
10
Gate to Source Voltage VGS (V)
VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
0.1
0
10
Static Drain to Source on State Resistance
RDS(on) (Ω)
ID (A)
Ta = 125°C
Pulse Test
6
Typical Transfer Characteristics
Typical Output Characteristics
8
4
Drain to Source Voltage
Case Temperature Tc (°C)
Drain Current
8V
7V
0
Drain to Source on State Resistance
RDS(on) (Ω)
10 V
12
Drain Current
Channel Dissipation Pch (W)
40
Static Drain to Source on State Resistance
vs. Temperature (Typical)
3.0
2.5
VGS = 10 V
Pulse Test
2.0
ID = 8 A
1.5
1.0
0.5
0
−25
4A
0
25
50
75
Case Temperature
2A
100 125 150
Tc (°C)
Page 3 of 6
RJK60S2DPP-E0
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
10000
1000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time (Typical)
100
di/dt = 100 A/μs
VGS = 0, Ta = 25°C
VGS = 0
f = 100 kHz
1000
Ciss
100
Coss
10
Crss
1
0.1
10
1
10
0
100
50
VDD = 480 V
300 V
100 V
400
200
8
4
VDD = 480 V
300 V
100 V
0
0
4
8
0
12
Gate Charge
16
25°C
1
VGS = 0
Pulse Test
0.1
0
Qg (nC)
ID = 1 mA
4
0.1 mA
2
1
VDS = 10 V
0
−25
0
25
50
75
Case Temperature
R07DS0742EJ0004 Rev.0.04
Jan 21, 2013
100 125 150
Tc (°C)
0.4
0.8
1.2
Source to Drain Voltage
1.6
VSD (V)
Drain to Source Breakdown Voltage
vs. Case Temperature (Typical)
Drain to Source Breakdown Voltage
V(BR)DSS (V)
5
VDS (V)
Ta = 125°C
20
6
300
10
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
3
250
IDR (A)
12
VDS
Reverse Drain Current
600
200
100
VGS (V)
VGS
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
16
ID = 1 A
Ta = 25°C
150
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Dynamic Input Characteristics (Typical)
800
100
Drain to Source Voltage
Reverse Drain Current IDR (A)
Gate to Source Cutoff Voltage
VGS(off) (V)
Ta = 25°C
800
700
600
500
ID = 10 mA
VGS = 0
400
−25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Page 4 of 6
RJK60S2DPP-E0
Preliminary
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
10 Ω
10%
10%
Vout
10%
VDD
= 300 V
Vin
10 V
90%
td(on)
tr
Avalanche Test Circuit
VDS
Monitor
90%
tf
td(off)
Avalanche Waveform
EAR =
L
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
D. U. T
VDS
VDD
ID
100 Ω
Vin
0
R07DS0742EJ0004 Rev.0.04
Jan 21, 2013
VDD
Page 5 of 6
RJK60S2DPP-E0
Preliminary
Package Dimension
Package Name
TO-220FP
JEITA Package Code
⎯
RENESAS Code
PRSS0003AG-A
Previous Code
⎯
MASS[Typ.]
1.9g
10.16 ± 0.20
2.54 ± 0.20
6.68 ± 0.20
3.3 ± 0.2
1.28 ± 0.30
3.18 ± 0.20
15.87 ± 0.20
φ 3.18 ± 0.10
12.98 ± 0.30
Unit: mm
Max 1.47
2.76 ± 0.20
0.80 ± 0.20
0.50
4.7 ± 0.2
5.08 ± 0.20
Ordering Information
Orderable Part Number
RJK60S2DPP-E0#T2
R07DS0742EJ0004 Rev.0.04
Jan 21, 2013
Quantity
50 pcs
Shipping Container
Tube
Page 6 of 6
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