Preliminary Datasheet RJK60S2DPP-E0 600V - 10A - SJ MOS FET High Speed Power Switching R07DS0742EJ0004 Rev.0.04 Jan 21, 2013 Features Superjunction MOSFET Low on-resistance RDS(on) = 0.53 typ. (at ID = 4 A, VGS = 10 V, Ta = 25C) High speed switching tf = 33 ns typ. (at ID = 4 A, VGS = 10 V, RL = 75 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D 1. Gate 2. Drain 3. Source G 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Tc = 25C Tc = 100C Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS ID Note1,2 ID Note1,2 ID (pulse)Note1 IDR Note1 IDR (pulse)Note1 Note3 IAP Note3 EAR Pch Note4 ch-c Tch Tstg Ratings 600 +30, 20 10 6.3 20 10 20 Unit V V A A A A A 2 0.21 26.3 4.75 150 –55 to +150 A mJ W C/W C C Limited by Tch max. Maximum duty cycle D = 0.75 STch = 25C, Tch 150C Value at Tc = 25C R07DS0742EJ0004 Rev.0.04 Jan 21, 2013 Page 1 of 6 RJK60S2DPP-E0 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage RDS(on) Min 600 — — 3 — — Typ — — — — 0.53 1.27 Max — 1 ±0.1 5 0.67 — Unit V mA A V Rg — 2.7 — f = 1 MHz VDS = 25 V, VGS = 0 Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Ciss Coss Crss td(on) tr td(off) tf VDF — — — — — — — — 530 715 2.8 11 17 22 33 1.0 — — — — — — — 1.6 pF pF pF ns ns ns ns V VDS = 25 V VGS = 0 f = 100 kHz Total gate charge Gate to source charge Gate to drain charge Body-drain diode reverse recovery time Qg Qgs Qgd trr 11.6 2.8 4.9 280 16.5 — — — — — nC nC nC ns A 2.5 — C Static drain to source on state resistance Gate resistance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Body-drain diode reverse recovery current Irr — — — — — Body-drain diode reverse recovery charge Qrr — Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = +30V, 20 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 4 A, VGS = 10 V Note 5 Ta = 150C Note 5 ID = 4 A, VGS = 10 V ID = 4 A VGS = 10 V RL = 75 Note 5 Rg = 10 IF = 8 A, VGS = 0 Note5 VDD = 480 V VGS = 10 V Note5 ID = 1 A IF = 8 A VGS = 0 Note5 diF/dt = 100 A/s Notes: 5. Pulse test R07DS0742EJ0004 Rev.0.04 Jan 21, 2013 Page 2 of 6 RJK60S2DPP-E0 Preliminary Main Characteristics Channel Dissipation vs. Case Temperature Typical Output Characteristics 16 ID (A) Ta = 25°C Pulse Test 30 20 10 15 V 8 6.5 V 6V 4 VGS = 5.5 V 0 0 25 50 75 100 125 150 175 0 2 10 V 6 15 V 6V 4 5.5 V 2 0 8 10 VDS (V) 100 6.5 V VGS = 5 V VDS = 10 V Pulse Test Drain Current ID (A) 8V 7V 10 Tc = 75°C 1 25°C −25°C 0.1 0.01 0 2 4 6 8 Drain to Source Voltage 10 Ta = 125°C 25°C 1 VGS = 10 V Pulse Test 1 10 Drain Current R07DS0742EJ0004 Rev.0.04 Jan 21, 2013 100 ID (A) 2 4 6 8 10 Gate to Source Voltage VGS (V) VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical) 0.1 0 10 Static Drain to Source on State Resistance RDS(on) (Ω) ID (A) Ta = 125°C Pulse Test 6 Typical Transfer Characteristics Typical Output Characteristics 8 4 Drain to Source Voltage Case Temperature Tc (°C) Drain Current 8V 7V 0 Drain to Source on State Resistance RDS(on) (Ω) 10 V 12 Drain Current Channel Dissipation Pch (W) 40 Static Drain to Source on State Resistance vs. Temperature (Typical) 3.0 2.5 VGS = 10 V Pulse Test 2.0 ID = 8 A 1.5 1.0 0.5 0 −25 4A 0 25 50 75 Case Temperature 2A 100 125 150 Tc (°C) Page 3 of 6 RJK60S2DPP-E0 Preliminary Typical Capacitance vs. Drain to Source Voltage 10000 1000 Capacitance C (pF) Reverse Recovery Time trr (ns) Body-Drain Diode Reverse Recovery Time (Typical) 100 di/dt = 100 A/μs VGS = 0, Ta = 25°C VGS = 0 f = 100 kHz 1000 Ciss 100 Coss 10 Crss 1 0.1 10 1 10 0 100 50 VDD = 480 V 300 V 100 V 400 200 8 4 VDD = 480 V 300 V 100 V 0 0 4 8 0 12 Gate Charge 16 25°C 1 VGS = 0 Pulse Test 0.1 0 Qg (nC) ID = 1 mA 4 0.1 mA 2 1 VDS = 10 V 0 −25 0 25 50 75 Case Temperature R07DS0742EJ0004 Rev.0.04 Jan 21, 2013 100 125 150 Tc (°C) 0.4 0.8 1.2 Source to Drain Voltage 1.6 VSD (V) Drain to Source Breakdown Voltage vs. Case Temperature (Typical) Drain to Source Breakdown Voltage V(BR)DSS (V) 5 VDS (V) Ta = 125°C 20 6 300 10 Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 3 250 IDR (A) 12 VDS Reverse Drain Current 600 200 100 VGS (V) VGS Gate to Source Voltage VDS (V) Drain to Source Voltage 16 ID = 1 A Ta = 25°C 150 Reverse Drain Current vs. Source to Drain Voltage (Typical) Dynamic Input Characteristics (Typical) 800 100 Drain to Source Voltage Reverse Drain Current IDR (A) Gate to Source Cutoff Voltage VGS(off) (V) Ta = 25°C 800 700 600 500 ID = 10 mA VGS = 0 400 −25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Page 4 of 6 RJK60S2DPP-E0 Preliminary Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin 10 Ω 10% 10% Vout 10% VDD = 300 V Vin 10 V 90% td(on) tr Avalanche Test Circuit VDS Monitor 90% tf td(off) Avalanche Waveform EAR = L 1 2 L • IAP2 • VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID 100 Ω Vin 0 R07DS0742EJ0004 Rev.0.04 Jan 21, 2013 VDD Page 5 of 6 RJK60S2DPP-E0 Preliminary Package Dimension Package Name TO-220FP JEITA Package Code ⎯ RENESAS Code PRSS0003AG-A Previous Code ⎯ MASS[Typ.] 1.9g 10.16 ± 0.20 2.54 ± 0.20 6.68 ± 0.20 3.3 ± 0.2 1.28 ± 0.30 3.18 ± 0.20 15.87 ± 0.20 φ 3.18 ± 0.10 12.98 ± 0.30 Unit: mm Max 1.47 2.76 ± 0.20 0.80 ± 0.20 0.50 4.7 ± 0.2 5.08 ± 0.20 Ordering Information Orderable Part Number RJK60S2DPP-E0#T2 R07DS0742EJ0004 Rev.0.04 Jan 21, 2013 Quantity 50 pcs Shipping Container Tube Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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