Preliminary Datasheet RJK6032DPH-E0 600V - 3A - MOS FET High Speed Power Switching R07DS0993EJ0100 Rev.1.00 Jan 23, 2013 Features Low on-resistance RDS(on) = 3.3 typ. (at ID = 1.0 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) D 4 1. 2. 3. 4. G 12 Gate Drain Source Drain 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote2 EARNote2 Pch Note3 ch-c Tch Tstg Ratings 600 30 3 6 3 6 3 0.49 40.3 3.1 150 –55 to +150 Unit V V A A A A A mJ W C/W C C Notes: 1. PW 10 s, duty cycle 1% 2. STch = 25C, Tch 150C 3. Value at Tc = 25C R07DS0993EJ0100Rev.1.00 Jan 23, 2013 Page 1 of 6 RJK6032DPH-E0 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Min 600 — — 3.5 — Typ — — — — 3.3 Max — 1 ±0.1 4.5 4.3 Unit V A A V Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF — — — — — — — — — — — 285 31 3.5 13 13 22 22 9.0 1.7 4.9 0.9 — — — — — — — — — — 1.5 pF pF pF ns ns ns ns nC nC nC V trr — 300 — ns Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 1.5 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 1.5 A VGS = 10 V RL = 200 Rg = 10 VDD = 480 V VGS = 10 V ID = 3 A IF = 3 A, VGS = 0 Note4 IF = 3 A, VGS = 0 diF/dt = 100 A/s Notes: 4. Pulse test 5. Since this device is equipped with high voltage FET chip (VDSS 600 V), high voltage may be supplied. Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal. 6. This device is sensitive to electrostatic discharge. It is recommended to adopt appropriate cautions when handling this product. R07DS0993EJ0100Rev.1.00 Jan 23, 2013 Page 2 of 6 RJK6032DPH-E0 Preliminary Main Characteristics Typical Output Characteristics Maximum Safe Operation Area 5 10 μs = μs Drain Current 0 0.1 Operation in this area is limited by RDS(on) 0.01 0.001 0.1 1 100 10 Drain to Source Voltage 5.4 V 1 0 Drain to Source on State Resistance RDS(on) (Ω) 1 25°C −25°C 0.01 0.001 2 4 6 8 20 VDS (V) VGS = 10 V Ta = 25°C Pulse Test 0.1 0.1 1 Drain Current 10 ID (A) Body-Drain Diode Reverse Recovery Time (Typical) 16 1000 VGS = 10 V Ta = 25°C Pulse Test ID = 3 A 8 4 0 −25 16 1 Static Drain to Source on State Resistance vs. Temperature (Typical) 12 12 10 VGS (V) Gate to Source Voltage 8 Static Drain to Source on State Resistance vs. Drain Current (Typical) VDS = 10 V Pulse Test Tc = 75°C 4 Drain to Source Voltage 1.5 A 0 25 50 75 Case Temperature R07DS0993EJ0100Rev.1.00 Jan 23, 2013 100 125 150 Tc (°C) Reverse Recovery Time trr (ns) ID (A) Drain Current 2 VDS (V) 10 Static Drain to Source on State Resistance RDS(on) (Ω) 5.8 V 0 1000 Typical Transfer Characteristics 0 10 V, 15 V VGS = 5 V Tc = 25°C 1 shot 0.1 7V 6V 4 3 10 1 Drain Current Ta = 25°C Pulse Test ID (A) 10 PW ID (A) 100 100 di/dt = 100 A/μs VGS = 0, Ta = 25°C 10 0.1 1 Reverse Drain Current 10 IDR (A) Page 3 of 6 RJK6032DPH-E0 Preliminary Typical Capacitance vs. Drain to Source Voltage 100 Coss 10 Crss 1 0.1 0 VGS = 0 f = 1 MHz Ta = 25°C 50 100 150 200 Drain to Source Voltage 250 300 800 600 12 VDD = 480 V 300 V 100 V 400 200 0 0 0 4 Gate to Source Cutoff Voltage VGS(off) (V) IDR (A) Reverse Drain Current 2 1 0 0 0.4 0.8 Source to Drain Voltage R07DS0993EJ0100Rev.1.00 Jan 23, 2013 1.2 1.6 VSD (V) 12 16 Qg (nC) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 8 3 8 Gate Charge 6 4 8 4 VDD = 480 V 300 V 100 V Reverse Drain Current vs. Source to Drain Voltage (Typical) 5 16 VDS VDS (V) VGS = 0 Ta = 25°C Pulse Test VGS ID = 3 A Ta = 25°C Gate to Source Voltage Capacitance C (pF) Ciss Drain to Source Voltage VDS (V) 1000 VGS (V) Dynamic Input Characteristics (Typical) VDS = 10 V 6 ID = 10 mA 4 1 mA 2 0 −25 0 25 50 0.1 mA 75 Case Temperature 100 125 150 Tc (°C) Page 4 of 6 RJK6032DPH-E0 Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 Tc = 25°C 1 D=1 0.5 0.2 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 3.1°C/W, Tc = 25°C 0.1 0.1 0.05 2 0.0 PDM D= 1 se 0.0 pul t o h 1s 0.01 10 μ PW T PW T 100 μ 1m 10 m Pulse Width 100 m 1 10 100 PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V Vin Vout 10% 10% 10% VDD = 300 V 90% td(on) R07DS0993EJ0100Rev.1.00 Jan 23, 2013 tr 90% td(off) tf Page 5 of 6 RJK6032DPH-E0 Preliminary Package Dimensions JEITA Package Code ⎯ RENESAS Code PRSS0004ZJ-B Previous Code TO-251S MASS[Typ.] 0.38g Unit: mm 6.6 ± 0.5 2.3 ± 0.5 5.34 ± 0.5 0.5 ± 0.5 6.1 ± 0.5 0.7 ± 0.5 Package Name TO-251 1.02 ± 0.2 1.8 ± 0.5 2.3 9.3 ± 0.5 0.96 max. 0.76 ± 0.10 2.3 0.10 0.50 +– 0.05 Ordering Information Orderable Part Number RJK6032DPH-E0#T2 R07DS0993EJ0100Rev.1.00 Jan 23, 2013 Quantity 70 pcs Shipping Container Tube Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. 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