UMF28N Transistors Power management (dual transistors) UMF28N 2SA1774 and DTC124XE are housed independently in a UMT package. zExternal dimensions (Unit : mm) 0.65 (1) 1.25 2.0 1.3 (3) (2) (5) (6) 0.2 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 0.65 UMF28N (4) zApplication Power management circuit 0.1Min. 0.9 0to0.1 zStructure Silicon epitaxial planar transistor 0.7 0.15 2.1 Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : F28 zEquivalent circuit (3) (2) DTr2 (1) Tr1 R1 R2 (4) (5) (6) R1=22kΩ R2=47kΩ zPackaging specifications Type UMF28N UMT6 Package F28 Marking TR Code Basic ordering unit (pieces) 3000 1/4 UMF28N Transistors zAbsolute maximum ratings (Ta=25°C) Tr1 Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −6 V Parameter Collector current IC −150 mA Collector power dissipation PC 150 (TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗ ∗ 120mW per element must not be exceeded. DTr2 Parameter Supply voltage Input voltage Symbol Limits VCC 50 VIN −10 to +40 IO 100 Output current 100 IC(Max.) PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg −55 to +150 Range of storage temperature Unit V V mA mW °C °C ∗ ∗ 120mW per element must not be exceeded. Each terminal mounted on a recommended land. zElectrical characteristics (Ta=25°C) Tr1 Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO −60 − − V IC = −50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC = −1mA Emitter-base breakdown voltage Conditions BVEBO −6 − − V IE = −50µA Collector cutoff current ICBO − − −0.1 µA VCB = −60V Emitter cutoff current IEBO − − −0.1 µA VEB = −6V VCE(sat) − − −0.5 V IC/IB = −50mA/−5mA hFE 180 − 390 − VCE = −6V, IC = −1mA fT − 140 − MHz Cob − 4 5 pF Symbol VI(off) VI(on) VO(on) II IO(off) GI Min. − 2.5 − − − 68 Typ. − − 0.1 − − − Max. 0.4 − 0.3 0.36 0.5 − Unit V mA µA − Conditions VCC=5V, IO=100µA VO=0.3V, IO=2mA IO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA R1 R2/R1 fT 15.4 1.7 − 22 2.1 250 28.6 2.6 − kΩ − MHz − − VCE=10V, IE= −5mA, f=100MHz ∗ Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance VCE = −12V, IE = 2mA, f = 100MHz VCB = −12V, IE = 0A, f = 1MHz DTr2 Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency V ∗ Transition frequency of the device. 2/4 UMF28N Transistors zElectrical characteristics curves Tr1 -5 -2 -1 -0.5 -0.2 -28.0 -24.5 -21.0 -6 -17.5 -14.0 -4 -10.5 -7.0 -2 -3.5µA 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -500 -450 -400 -350 -300 -80 -250 -60 -200 -150 -40 -100 -20 -0.4 -0.8 -1.2 -1.6 -50µA IB = 0 -2.0 -40°C 100 50 VCE = -6V -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 COLLECTOR CURRENT : IC (mA) -1 -2 -5 -10 -20 -0.5 -0.2 Ta = 100°C 25°C -40°C -0.1 -0.05 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) TRANSITION FREQUENCY : fT (MHz) lC/lB = 10 -50 -100 -0.5 -0.2 IC/IB = 50 20 -0.1 10 -0.05 -0.2 Ta = 25°C VCE = -12V 200 100 50 1 2 5 10 20 50 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current -1 -2 -5 -10 -20 -50 -100 Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι ) 500 0.5 -0.5 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current ( ΙΙ ) 1000 -1 -5 Ta = 25°C COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) -0.2 -0.5 -4 -1 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) -0.2 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE 25°C 100 -3 Fig.3 Grounded emitter output characteristics ( ΙΙ ) Ta = 100°C 200 -2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics ( Ι ) 500 200 -1 0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) VCE = -5V -3V -1V Ta = 25°C 50 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta = 25°C IB = 0 Fig.1 Grounded emitter propagation characteristics DC CURRENT GAIN : hFE -100 -31.5 -8 BASE TO EMITTER VOLTAGE : VBE (V) 500 -35.0 Ta = 25°C COLLECTOR CURRENT : IC (mA) -10 -0.1 -10 VCE = −6V Ta = 100°C 25°C -20 −40°C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) -50 20 Ta = 25°C f = 1MHz IE = 0A IC = 0A Cib 10 Co b 5 2 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/4 UMF28N Transistors DTr2 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta=−40°C 25°C 100°C 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) VO=5V 500 Ta=100°C 25°C −40°C 2m 1m 500µ Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 200 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) Fig.1 Input voltage vs. output current (ON characteristics) 1 1k VCC=5V DC CURRENT GAIN : GI 100 Fig.2 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m Ta=100°C 25°C −40°C 200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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