UMF5N : Transistors

UMF5N
Transistors
Power management (dual transistors)
UMF5N
2SA2018 and DTC144EE are housed independently in a UMT package.
zApplication
Power management circuit
zDimensions (Units : mm)
UMT6
SOT-363
zFeatures
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
zStructure
Silicon epitaxial planar transistor
Each lead has same dimensions
zEquivalent circuits
(3)
(2)
DTr2
(1)
Tr1
R1
R2
(4)
(5)
(6)
R1=47kΩ
R2=47kΩ
zPackaging specifications
Type
UMF5N
Package
UMT6
Marking
F5
Code
TR
Basic ordering unit (pieces) 3000
Rev.A
1/4
UMF5N
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Limits
Symbol
−15
VCBO
VCEO
−12
VEBO
−6
IC
−500
Collector current
ICP
−1.0
PC
150(TOTAL)
Power dissipation
Tj
150
Junction temperature
Tstg
−55~+150
Range of storage temperature
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Unit
V
V
V
mA
A
mW
°C
°C
∗1
∗2
∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
DTr2
Parameter
Symbol
Limits
VCC
50
Supply voltage
VIN
−10 to +40
Input voltage
IC
100
Collector current
IO
30
Output current
PC
150(TOTAL)
Power dissipation
Tj
150
Junction temperature
Tstg
−55 to +150
Range of storage temperature
Unit
V
V
mA
mA
mW
°C
°C
∗1
∗2
∗1 Characteristics of built-in transistor.
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−12
−15
−6
−
−
−
270
−
−
Typ.
−
−
−
−
−
−100
−
260
6.5
Max.
−
−
−
−100
−100
−250
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=−1mA
IC=−10µA
IE=−10µA
VCB=−15V
VEB=−6V
IC=−200mA, IB=−10mA
VCE=−2V, IC=−10mA
VCE=−2V, IE=10mA, f=100MHz
VCB=−10V, IE=0mA, f=1MHz
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
Min.
−
3.0
−
−
−
68
Typ.
−
−
100
−
−
−
Max.
0.5
−
300
180
500
−
Unit
V
V
mV
µA
nA
−
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=2mA
VO=10mA, II=0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=5mA
fT
−
250
−
MHz
VCE=10V, IE=−5mA, f=100MHz ∗
R1
R2/R1
32.9
0.8
47
1.0
61.1
1.2
kΩ
−
−
−
DTr2
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗Characteristics of built-in transistor.
Rev.A
2/4
UMF5N
Transistors
0.2
10
0.4
0.6
0.8
1.0
1.2
1.4
1
10
BASE TO EMITTER VOLTAGE : VBE (V)
Ta=25°C
Ta=−40°C
10
1
10
100
1000
1000
IE=0A
f=1MHz
Ta=25°C
Cib
10
Cob
1
10
Ta=−40°C
Ta=25°C
1000
Ta=125°C
100
10
1
10
100
100
EMITTER TO BASE VOLTAGE : VEB(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
1000
Ta=25°C
Pulsed
100
IC/IB=50
IC/IB=20
IC/IB=10
10
1
1
1000
10
100
1000
COLLECTOR CURRENT : IC (mA)
1000
COLLECTOR CURRENT : IC (mA)
100
1
0.1
1000
IC/IB=20
Pulsed
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
BASER SATURATION VOLTAGE : VBE (sat) (mV)
Ta=125°C
100
1
100
10000
IC/IB=20
Pulsed
VCE=2V
Ta=25°C
Pulsed
100
10
1
1
10
100
1000
EMITTER CURRENT : IE (mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
Fig.6 Gain bandwidth product
vs. emitter current
10
TRANSITION FREQUENCY : IC (A)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV)
Fig.1 Grounded emitter propagation
characteristics
1000
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
Ta=−40°C
100
1
0
Fig.2 DC current gain vs.
collector current
Ta=25°C
TRANSITION FREQUENCY : fT (MHz)
DC CURRENT GAIN : hFE
Ta= −40°
C
Ta=25°
C
°C
1
VCE=2V
Pulsed
Ta=125°C
100
10
COLLECTOR CURRENT : IC (mA)
1000
VCE=2V
Pulsed
Ta=12
5
COLLECTOR CURRENT : IC (mA)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
zElectrical characteristic curves
Tr1
Ta=25°C
Single Pulsed
1
10ms
100ms
1ms
DC
0.1
0.01
0.001
0.01
0.1
1
10
100
EMITTER CURRENT : VCE (V)
Fig.8 Safe operation area
Rev.A
3/4
UMF5N
Transistors
DTr2
10m
5m
VO=0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
50
20
10
5
Ta=−40°C
25°C
100°C
2
1
500m
200m
100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
2m Ta=100°C
25°C
1m
−40°C
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
Fig.9 Input voltage vs. output current
(ON characteristics)
VO=5V
500
200
100
Ta=100°C
25°C
−40°C
50
20
10
5
2
0.5
1.0
1.5
2.0
2.5
3.0
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
1
1k
VCC=5V
DC CURRENT GAIN : GI
100
Fig.10 Output current vs. input voltage
(OFF characteristics)
1
100µ 200µ 500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
Fig.11 DC current gain vs. output
current
lO/lI=20
OUTPUT VOLTAGE : VO(on) (V)
500m
200m
100m
Ta=100°C
25°C
−40°C
50m
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
Fig.12 Output voltage vs. output
current
Rev.A
4/4
Appendix
Notes
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Application circuit diagrams and circuit constants contained herein are shown as examples of standard
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Appendix1-Rev2.0