EMZ2 / UMZ2N / IMZ2A Transistors Power management (dual transistors) EMZ2 / UMZ2N / IMZ2A zExternal dimensions (Unit : mm) (5) (6) 0.5 IMZ2A (5) (6) Each lead has same dimensions ROHM : EMT6 (2) UMZ2N (1) (3) (3) (2) (6) (4) (5) Tr1 (1) (6) 0.2 (4) Tr2 Tr1 (5) Tr2 1.25 zAbsolute maximum ratings (Ta = 25°C) Junction temperature Storage temperature Tj Tstg PC 0.7 50 −6 7 −150 150 150 (TOTAL) 300 (TOTAL) 0.1Min. V V V mA mW 150 °C −55 to +150 °C ∗1 ∗2 ROHM : UMT6 EIAJ : SC-88 Each lead has same dimensions IMZ2A (3) (4) (5) per element must not be exceeded. ∗12 120mW ∗ 200mW per element must not be exceeded. −50 (1) VEBO IC Tr2 60 (2) Emitter-base voltage Collector current Collector power EMZ2, UMZ2N dissipation IMZ2A Tr1 −60 0to0.1 VCBO VCEO 2.1 Unit (6) Collector-base voltage Collector-emitter voltage Limits 0.15 Symbol 0.3 Parameter 2.0 (4) 1.3 (1) 0.65 (2) 0.65 (3) (1) 0.95 0.95 1.9 2.9 EMZ2 / UMZ2N (2) 1.2 1.6 0.13 zEquivalent circuits (3) (4) 0.5 0.5 1.0 1.6 EMZ2 0.22 zFeature 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. 1.6 EMZ2 UMZ2N IMZ2A EMT6 Z2 UMT6 Z2 SMT6 Z2 T2R TR T108 8000 3000 3000 0.8 0.15 0.3to0.6 ROHM : SMT6 EIAJ : SC-74 0to0.1 Part No. Package Marking Code Basic ordering unit (pieces) 1.1 2.8 zPackage, marking, and packaging specifications Each lead has same dimensions Rev.A 1/4 EMZ2 / UMZ2N / IMZ2A Transistors zElectrical characteristics (Ta=25°C) Tr1 (PNP) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol Min. Typ. Max. Unit BVCBO BVCEO − − − − − − − −0.1 V V V µA IC = −50µA IC = −1mA − VCE(sat) −60 −50 −6 − − − − −0.1 −0.5 µA V VEB = −6V IC/IB = −50mA/−5mA hFE 120 − 560 − fT − 140 − MHz Cob − 4 5 pF Symbol Min. Typ. Max. Unit BVCBO BVCEO 60 50 − − − − V V IC = 50µA IC = 1mA BVEBO − − − − − − 0.1 0.1 0.4 560 V µA µA IE = 50µA VCB = 60V VEB = 7V hFE 7 − − − 120 fT − 180 − MHz Cob − 2 3.5 pF BVEBO ICBO IEBO ∗ Transition frequency of the device. Conditions IE = −50µA VCB = −60V VCE = −6V , IC = −1mA VCE = −12V , IE = 2mA , f = 100MHz VCB = −12V , IE = 0A , f = 1MHz ∗ Tr2 (NPN) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ICBO IEBO VCE(sat) ∗ Transition frequency of the device. V − Conditions IC/IB = 50mA/5mA VCE = 6V , IC = 1mA VCE = 12V , IE = −2mA , f = 100MHz VCB = 12V , IE = 0A , f = 1MHz ∗ zElectrical characteristics curves PNP Tr −10 −5 −2 −1 −0.5 −0.2 −0.1 −10 VCE= −6V −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics −35.0 Ta=25˚C −31.5 −28.0 −8 −24.5 −21.0 −6 −17.5 −14.0 −4 −10.5 −7.0 −2 −3.5µA 0 −0.4 −0.8 −1.2 IB=0 −1.6 −2.0 COLLECTOR TO MITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics (I) −100 COLLECTOR CURRENT : IC (mA) −20 Ta=100˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) −50 −80 −60 Ta=25˚C −500 −450 −400 −350 −300 −250 −200 −150 −40 −100 −20 −50µA IB=0 0 −1 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics (II) Rev.A 2/4 EMZ2 / UMZ2N / IMZ2A 500 VCE= −5V −3V −1V Ta=25˚C Ta=100˚C 25˚C DC CURRENT GAIN : hFE 200 100 −40˚C 200 100 50 50 Ta=25˚C −0.5 −0.2 IC/IB=50 −0.1 20 10 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −0.2 −0.5 −1 −50 −100 −0.5 −0.2 Ta=100˚C 25˚C −40˚C −0.1 −0.05 −0.2 −0.5 −1 −2 1000 TRANSITION FREQUENCY : fT (MHz) lC/lB=10 −5 −10 −20 −0.2 −0.5 −1 −50 −100 500 200 100 50 0.5 1 2 5 10 20 50 100 EMITTER CURRENT : IE (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (II) −5 −10 −20 −50 −100 Fig.6 Collector-emitter saturation voltage vs. collector current (I) Ta=25˚C VCE= −12V COLLECTOR CURRENT : IC (mA) −2 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (II) Fig.4 DC current gain vs. collector current (I) −1 VCE= −6V −5 −10 −20 −50 −100 −2 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −1 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) DC CURRENT GAIN : hFE 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors 20 Ta=25˚C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 −0.5 −1 −2 −5 −10 −20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage Fig.8 Gain bandwidth product vs. emitter current NPN Tr 10 2 1 25°C −55°C 5 0.5 0.2 0.1 0 COLLECTOR CURRENT : IC (mA) 20 Ta=100°C COLLECTOR CURRENT : IC (mA) VCE=6V 0.50mA mA 0.45 A 0.40m 0.35mA Ta=25°C 80 0.30mA 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0.05mA IB=0A 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.10 Grounded emitter propagation characteristics 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.11 Grounded emitter output characteristics ( Ι ) 10 COLLECTOR CURRENT : IC (mA) 100 50 30µA Ta=25°C 27µA 8 24µA 21µA 6 18µA 15µA 12µA 4 9µA 6µA 2 3µA 0 0 4 8 IB=0A 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.12 Grounded emitter output characteristics ( ΙΙ ) Rev.A 3/4 EMZ2 / UMZ2N / IMZ2A VCE=5V 3V 1V 200 100 50 20 0.5 1 2 5 10 20 25°C 200 −55°C 100 50 20 10 0.2 50 100 200 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.13 DC current gain vs. collector current ( Ι ) Fig.14 DC current gain vs. collector current ( ΙΙ ) 0.5 IC/IB=10 0.2 Ta=100°C 25°C −55°C 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.5 0.1 0.05 0.02 0.01 Ta=25°C f=1MHz IE=0A IC=0A 5 2 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.19 5 10 20 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 Ta=25°C VCE=6V 500 200 100 50 −0.5 −1 50 100 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) Fig.17 Collector-emitter saturation voltage vs. collector current (ΙΙ) BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) 20 Cib 2 0.2 COLLECTOR CURRENT : IC (mA) Fig.16 Collector-emitter saturation voltage vs. collector current ( Ι ) 10 0.5 1 Ta=25°C Fig.15 Collector-emitter saturation voltage vs. collector current Ta=100°C 25°C −55°C 0.2 0.5 COLLECTOR CURRENT : IC (mA) IC/IB=50 0.2 COLLECTOR CURRENT : IC (mA) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 0.5 1 COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 10 0.2 VCE=5V Ta=100°C TRANSITION FREQUENCY : fT (MHz) 500 Ta=25°C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors Fig.18 Gain bandwidth product vs. emitter current Ta=25°C f=32MHZ VCB=6V 200 100 50 20 10 −0.2 −0.5 −1 −2 −5 −10 EMITTER CURRENT : IE (mA) Fig.20 Base-collector time constant vs. emitter current Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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