ROHM EMF5

EMF5
Transistors
Power management (dual transistors)
EMF5
2SA2018 and DTC144EE are housed independently in a EMT6 package.
zApplication
Power management circuit
zStructure
Silicon epitaxial planar transistor
zEquivalent circuits
(3)
(2)
DTr2
ROHM : EMT6
(5)
(2)
0.5 0.5
1.0
1.6
(3)
(4)
(1)
1.2
1.6
0.5
(6)
0.13
zFeatures
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
0.22
zDimensions (Units : mm)
Each lead has
same dimensions
Abbreviated symbol : F5
(1)
Tr1
R1
R2
(4)
(5)
(6)
R1=47kΩ
R2=47kΩ
zPackaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMF5
EMT6
F5
T2R
8000
Rev.A
1/4
EMF5
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Limits
Symbol
−15
VCBO
−12
VCEO
−6
VEBO
−500
IC
Collector current
−1.0
ICP
150(TOTAL)
PC
Power dissipation
Tj
150
Junction temperature
Tstg
−55~+150
Range of storage temperature
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Unit
V
V
V
mA
A
mW
°C
°C
∗1
∗2
∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
DTr2
Limits
Parameter
Symbol
50
VCC
Supply voltage
−10~+40
VIN
Input voltage
100
IC
Collector current
30
IO
Output current
150(TOTAL)
PC
Power dissipation
Tj
150
Junction temperature
Tstg
−55~+150
Range of storage temperature
Unit
V
V
mA
mA
mW
°C
°C
∗1
∗2
∗1 Characteristics of built-in transistor.
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−12
−15
−6
−
−
−
270
−
−
Typ.
−
−
−
−
−
−100
−
260
6.5
Max.
−
−
−
−100
−100
−250
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=−1mA
IC=−10µA
IE=−10µA
VCB=−15V
VEB=−6V
IC=−200mA, IB=−10mA
VCE=−2V, IC=−10mA
VCE=−2V, IE=10mA, f=100MHz
VCB=−10V, IE=0mA, f=1MHz
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
Min.
−
3.0
−
−
−
68
Typ.
−
−
100
−
−
−
Max.
0.5
−
300
180
500
−
Unit
V
V
mV
µA
nA
−
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=2mA
VO=10mA, II=0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=5mA
fT
−
250
−
MHz
VCE=10V, IE=−5mA, f=100MHz ∗
R1
R2/R1
32.9
0.8
47
1.0
61.1
1.2
kΩ
−
−
−
DTr2
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗Characteristics of built-in transistor.
Rev.A
2/4
EMF5
Transistors
0.2
10
0.4
0.6
0.8
1.0
1.2
1.4
1
BASE TO EMITTER VOLTAGE : VBE (V)
Ta=125°C
100
Ta=25°C
Ta=−40°C
10
1
1
10
100
1000
100
1000
1000
IC/IB=20
Pulsed
Ta=25°C
1000
Ta=−40°C
Ta=125°C
100
10
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10
10000
IC/IB=20
Pulsed
BASER SATURATION VOLTAGE : VBE (sat) (mV)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV)
Fig.1 Grounded emitter propagation
characteristics
1000
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
Ta=−40°C
100
1
0
Fig.2 DC current gain vs.
collector current
Ta=25°C
Fig.5 Base-emitter saturation voltage
vs. collector current
1000
Ta=25°C
Pulsed
100
IC/IB=50
IC/IB=20
IC/IB=10
10
1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
1000
TRANSITION FREQUENCY : fT (MHz)
DC CURRENT GAIN : hFE
Ta= −40°
C
Ta=25°
C
°C
1
VCE=2V
Pulsed
Ta=125°C
100
10
COLLECTOR CURRENT : IC (mA)
1000
VCE=2V
Pulsed
Ta=12
5
COLLECTOR CURRENT : IC (mA)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
zElectrical characteristic curves
Tr1
VCE=2V
Ta=25°C
Pulsed
100
10
1
1
10
100
1000
EMITTER CURRENT : IE (mA)
Fig.6 Gain bandwidth product
vs. emitter current
IE=0A
f=1MHz
Ta=25°C
100
Cib
10
Cob
1
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.A
3/4
EMF5
Transistors
DTr2
10m
5m
VO=0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
50
20
10
5
Ta=−40°C
25°C
100°C
2
1
500m
200m
100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
2m Ta=100°C
25°C
1m
−40°C
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
Fig.9 Input voltage vs. output current
(ON characteristics)
VO=5V
500
200
100
Ta=100°C
25°C
−40°C
50
20
10
5
2
0.5
1.0
1.5
2.0
2.5
3.0
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
1
1k
VCC=5V
DC CURRENT GAIN : GI
100
Fig.10 Output current vs. input voltage
(OFF characteristics)
1
100µ 200µ 500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
Fig.11 DC current gain vs. output
current
lO/lI=20
OUTPUT VOLTAGE : VO(on) (V)
500m
200m
100m
Ta=100°C
25°C
−40°C
50m
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
Fig.12 Output voltage vs. output
current
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Copyright © 2008 ROHM CO.,LTD.
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Appendix1-Rev2.0