EMF7 Transistors Power management (dual transistors) EMF7 2SC5585 and DTC123EE are housed independently in a EMT6 package. !Structure Silicon epitaxial planar transistor ROHM : EMT6 (2) DTr2 (2) 0.5 0.5 1.0 1.6 (5) (1) 0.5 1.2 1.6 Each lead has same dimensions Abbreviated symbol：F7 !Equivalent circuits (3) (3) (4) (6) 0.13 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 0.22 !External dimensions (Units : mm) !Application Power management circuit (1) Tr1 R1 R2 (4) (5) (6) R1=2.2kΩ R2=2.2kΩ !Packaging specifications Type EMF7 Package EMT6 Marking F7 Code T2R Basic ordering unit(pieces) 8000 1/4 EMF7 Transistors !Absolute maximum ratings (Ta=25°C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits VCBO 15 VCEO 12 VEBO 6 IC 500 Collector current ICP 1.0 PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg −55~+150 Range of storage temperature Unit V V V mA A mW °C °C ∗1 ∗2 ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. DTr2 Parameter Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Limits Symbol 50 VCC −10~+20 VIN 100 IC 100 IO 150(TOTAL) PC Tj 150 Tstg −55~+150 Unit V V mA mA mW °C °C ∗1 ∗2 ∗1 Characteristics of built-in transistor. ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. !Electrical characteristics (Ta=25°C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 12 15 6 − − − 270 − − Typ. − − − − − 90 − 320 7.5 Max. − − − 100 100 250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=1mA IC=10µA IE=10µA VCB=15V VEB=6V IC=200mA, IB=10mA VCE=2V, IC=10mA VCE=2V, IE=−10mA, f=100MHz VCB=10V, IE=0mA, f=1MHz DTr2 Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI(off) VI(on) VO(on) II IO(off) GI Min. − 3.0 − − − 20 Typ. − − 100 − − − Max. 0.5 − 300 3.8 0.5 − Unit V V mV mA µA − Conditions VCC=5V, IO=100µA VO=0.3V, IO=20mA VO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=20mA fT − R1 R2/R1 1.54 0.8 250 − MHz VCE=10V, IE=−5mA, f=100MHz ∗ 2.2 1.0 2.86 1.2 kΩ − − − ∗ Characteristics of built-in transistor. 2/4 EMF7 Transistors VCE=2V Pulsed 0.4 0.6 C 0.8 1.0 1.2 10 1 1.4 1 10 10000 IC/IB=20 Pulsed Ta=125°C 100 Ta=25°C Ta=−40°C 10 1 100 10 100 1000 1000 1000 Ta=25°C Pulsed 100 IC/IB=50 10 1 Ta=25°C Ta=−40°C Ta=125°C 100 10 1 10 100 1 10 100 1000 1000 VCE=2V Ta=25°C Pulsed 100 10 1 1 10 100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.4 Collector-emitter saturation voltage Fig.5 Base-emitter saturation voltage Fig.6 Gain bandwidth product EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) vs. collector current ( ΙΙ ) 1000 vs. collector current 1000 COLLECTOR CURRENT : IC (mA) vs. collector current ( Ι ) IC/IB=20 Pulsed 1000 IC/IB=20 IC/IB=10 collector current BASER SATURATION VOLTAGE : VBE (sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Fig.1 Grounded emitter propagation characteristics 1 Fig.3 Collector-emitter saturation voltage Ta=−40°C 100 BASE TO EMITTER VOLTAGE : VBE (V) 1000 Fig.2 DC current gain vs. Ta=25°C TRANSITION FREQUENCY : fT (MHz) 0.2 Ta= −40° 5°C Ta=12 Ta=25° C 10 0 VCE=2V Pulsed Ta=125°C 100 1 COLLECTOR CURRENT : IC (mA) 1000 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) !Electrical characteristic curves Tr1 1000 vs. emitter current IE=0A f=1MHz Ta=25°C 100 Cib Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/4 EMF7 Transistors DTr2 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta=−40°C 25°C 100°C 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 2m 1m 500µ 1k VCC=5V Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 VO=5V 500 DC CURRENT GAIN : GI 100 200 100 50 Ta=100°C 25°C −40°C 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) Fig.9 Input voltage vs. output current (ON characteristics) Fig.10 Output current vs. input voltage (OFF characteristics) Fig.11 DC current gain vs. output current 1 lO/lI=20 OUTPUT VOLTAGE : VO (on) (V) 500m 200m 100m 50m Ta=100°C 25°C −40°C 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.12 Output voltage vs. output current 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0