IMZ4 Transistors General purpose transistor (dual transistors) IMZ4 zExternal dimensions (Unit : mm) 1.1+0.2 −0.1 2.9±0.2 1.9±0.2 0.8±0.1 0.95 0.95 (6) 1.6 (2) (1) +0.1 0.3−0.05 (3) 2.8±0.2 (5) +0.2 −0.1 (4) 0 to 0.1 +0.1 0.15−0.06 All terminals have same dimensions ROHM : SMT6 EIAJ : SC-74 z Equivalent circuit (4) (5) 0.3 to 0.6 zFeatures 1) Includes a 2SA1036K and a 2SC411K transistor in a SMT package. 2) Mounting possible with SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) High collector current. IC=500mA 5) Mounting cost and area can be cut in half. Abbreviated symbol: Z4 (6) Tr1 Tr2 (3) (2) (1) zStructure Epitaxial planar type NPN / PNP silicon transistor zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Tr1 (NPN) Tr2 (PNP) Unit Collector-base voltage VCBO 40 −40 V Collector-emitter voltage VCEO 32 −32 V Emitter-base voltage VEBO 5 −5 V Collector current IC 500 −500 mA Collector power dissipation Pd 300 (TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗ ∗ 200mW per element must not be exceeded. Rev.A 1/4 IMZ4 Transistors zElectrical characteristics (Ta=25°C) Tr1 (NPN) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 40 − − V Collector-emitter breakdown voltage BVCEO 32 − − V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=100µA Collector cutoff current ICBO − − 1.0 µA VCB=20V Emitter cutoff current IEBO − − 1.0 µA VEB=4V VCE(sat) − − 0.6 V IC/IB=500mA/50mA hFE 120 − 560 − VCE=3V, IC=100mA Transition frequency fT − 250 − MHz Output capacitance Cob − 6.5 − pF Collector-emitter saturation voltage DC current transfer ratio Conditions IC=100µA ∗ VCE=5V, IE= −20mA, f=100MHz VCB=10V, IE=0A, f=1MHz ∗ Measured using pulse current. Tr2 (PNP) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO −40 − − V Collector-emitter breakdown voltage BVCEO −32 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE= −100µA Collector cutoff current ICBO − − −1.0 µA VCB= −20V Emitter cutoff current IEBO − − −1.0 µA VEB= −4V VCE(sat) − − −0.6 V IC/IB= −300mA/−30mA hFE∗ 120 − 560 − VCE= −3V, IC= −100mA Transition frequency fT − 200 − MHz Output capacitance Cob − 7 − pF Collector-emitter saturation voltage DC current transfer ratio ∗ Measured using pulse current. Conditions IC= −100µA VCE= −5V, IE= 20mA, f= 100MHz VCB= −10V, IE= 0A, f= 1MHz zPackaging specifications Package Type Taping Code T2R TR T108 Basic ordering unit (pieces) 8000 3000 3000 EMZ1 UMZ1N IMZ1A Rev.A 2/4 IMZ4 Transistors zElectrical characteristic curves Tr1 (NPN) COLLECTOR CURRENT : IC (mA) 20 10 5 25˚C −55˚C 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.30mA 0.25mA 50 0.10mA 0.05mA 1 2 3 IB=0A 4 0.05 2 5 10 20 50 100 200 500 1000 0.8mA 200 0.6mA 0.4mA 100 0.2mA 1 2 3 IB=0A 4 5 Fig.2 Grounded emitter output characteristics ( Ι ) Fig.3 Grounded emitter output characteristics ( ΙΙ ) 500 VCE=3V Ta=100°C 75°C 50°C 100 25°C 0°C °C 50 −25 C 0° −5 200 20 0.02 0.5 1 300 COLLECTOR TO EMITTER VOLTAGE : VCE (V) TRANSITION FREQUENCY : fT (MHz) DC CURRENT GAIN : hFE 0.1 2mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 400 0 0 5 500 0.2 Ta=25°C COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1000 Ta=25°C lC/lB=10 0.5 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 0.20mA 0.15mA Fig.1 Grounded emitter propagation characteristics 1 500 A 0.45m A 0.40m mA 0.50 0.35mA 0 0 BASE TO EMITTER VOLTAGE : VBE (V) Ta=25°C COLLECTOR CURRENT : IC (mA) 100 VCE=6V Ta=100˚C COLLECTOR CURRENT : IC (mA) 50 10 0.1 0.2 0.5 1 2 5 10 20 50 100 200 5001000 Ta=25°C VCE=5V 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 DC current gain vs. collector current Fig.6 Gain bandwidth product vs. emitter current Ta=25°C f=1MHz IE=0A IC=0A 50 Cib 20 Co 10 b 5 2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 3/4 IMZ4 Transistors Tr2 (PNP) −10 −5 −2 −1 −0.5 −80 −0.2mA −1 −2 −3 −4 1000 DC CURRENT GAIN : hFE VCE= −5V −3V −1V 200 100 50 VCE = −3V Ta=100°C 200 25°C −55°C 100 50 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 COLLECTOR CURRENT : IC (mA) Fig.11 DC current gain vs. collector current ( Ι ) Fig.12 DC current gain vs. collector current ( ΙΙ ) −0.5 −0.3 −0.2 −0.1 Ta=100°C 25°C −0.05 − 55°C −0.03 −0.02 −0.01 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 COLLECTOR CURRENT : IC (mA) Fig.14 Collector-emitter saturation voltage vs. collector current ( Ι ) −1.5mA −1.0mA −100 0 −0.5mA IB=0A Ta=25°C VCE = −5V 1000 500 200 100 50 0.5 1 2 5 10 20 −5 0 −10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Grounded emitter output characteristics ( ΙΙ ) 500 20 −50 −100 −200 −500 −1000 lC/lB=10 −200 −5 COLLECTOR CURRENT : IC (mA) −1.0 −300 IB=0A 0 −5.0mA −4.5mA −4.0mA −3.5mA −3.0mA −2.5mA −2.0mA Fig.9 Grounded emitter output characteristics ( Ι ) TRANSITION FREQUENCY : fT (MHz) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −0.3mA Ta=25°C −400 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 500 −5 −10 −20 −0.4mA −0.1mA 0 Ta=25°C −2 −0.5mA −20 Fig.8 Grounded emitter propagation characteristics −1 −0.6mA −40 BASE TO EMITTER VOLTAGE : VBE (V) 20 −0.7mA −60 −0.2 −0.1 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2 1000 −0.8mA COLLECTOR CURRENT : IC (mA) −20 −1mA 50 EMITTER CURRENT : IE (mA) Fig.15 Gain bandwidth product vs. emitter current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −50 −500 −0.9mA Ta=25°C Ta=25°C −1 −0.5 −0.2 −0.1 IC/IB=50 −0.05 20 10 −0.02 −1 −2 −5 −10 −20 −50 −100 −200 −500 COLLECTOR CURRENT : IC (mA) Fig.13 Collector-emitter saturation voltage vs. collector current ( Ι ) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 25°C −55°C −100 −100 VCE = −3V −200 Ta=100°C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −500 Ta=25°C f=1MHz IC=0A IE=0A 100 50 20 10 5 2 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.16 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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