BCR10CS-12LA Triac Medium Power Use REJ03G0339-0300 Rev.3.00 Nov 30, 2007 Features • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AB-A (Package name: TO-220S) 4 1 2, 4 3 2 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 1 3 Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control, solid state relay, copying machine, electric tool, electric heater control, and other general purpose control applications Maximum Ratings Parameter Symbol Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 REJ03G0339-0300 Page 1 of 6 Rev.3.00 Nov 30, 2007 VDRM VDSM Voltage class 12 600 720 Unit V V BCR10CS-12LA Parameter RMS on-state current Symbol IT (RMS) Ratings 10 Unit A Surge on-state current ITSM 100 A I2 t 41.6 A2s PGM PG (AV) VGM IGM Tj Tstg — 5 0.5 10 2 – 40 to +125 – 40 to +125 1.2 W W V A °C °C g Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.5 Unit mA V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine full wave Note3 360° conduction, Tc = 103°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 15 A, Instantaneous measurement Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger currentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 30Note6 30Note6 30Note6 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD Rth (j-c) 0.2 — — — — 1.8 V °C/W Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 Note4 (dv/dt)c 10 — — V/µs Tj = 125°C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note5 commutating voltage Notes: 2. 3. 4. 5. 6. Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured on the T2 tab. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT ≤ 20mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 5.0 A/ms 3. Peak off-state voltage VD = 400 V REJ03G0339-0300 Page 2 of 6 Rev.3.00 Nov 30, 2007 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR10CS-12LA Performance Curves 102 7 5 3 2 Rated Surge On-State Current 100 Tj = 125°C 101 7 5 3 2 Tj = 25°C 100 7 5 3 2 Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 60 50 40 30 20 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V PG(AV) = 0.5W PGM = 5W VGT = 1.5V IGM = 2A 100 7 5 3 2 103 7 5 4 3 2 102 7 5 4 3 2 Typical Example IRGT I, IRGT III IFGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) REJ03G0339-0300 Page 3 of 6 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Conduction Time (Cycles at 60Hz) IRGT I IFGT I, IRGT III VGD = 0.2V 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 70 On-State Voltage (V) Rev.3.00 Nov 30, 2007 Transient Thermal Impedance (°C/W) Gate Voltage (V) 101 7 5 3 2 80 0 100 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 102 7 5 3 2 90 102 2 3 5 7 103 2 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR10CS-12LA Allowable Case Temperature vs. RMS On-State Current 32 160 28 140 Case Temperature (°C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 24 360° Conduction Resistive, 20 inductive loads 16 12 8 4 0 0 2 4 8 6 10 12 14 16 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 4 6 2 8 10 12 14 16 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 Ambient Temperature (°C) All fins are black painted 140 aluminum and greased 120 120 × 120 × t2.3 100 100 × 100 × t2.3 80 60 × 60 × t2.3 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 2 8 0 4 6 10 12 14 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 16 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 REJ03G0339-0300 Page 4 of 6 Junction Temperature (°C) Rev.3.00 Nov 30, 2007 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Ambient Temperature (°C) 120 RMS On-State Current (A) 160 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Curves apply regardless of conduction angle 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) 103 7 5 3 2 Distribution T2+, G– Typical Example 102 7 5 3 2 101 7 5 3 T +, G+ 2 2– – Typical Example T2 , G 100 –40 0 40 80 120 160 Breakover Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage Commutation Characteristics 7 5 160 Typical Example Tj = 125°C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Latching Current (mA) Latching Current vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) BCR10CS-12LA 3 2 101 7 5 3 2 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 103 7 5 4 3 2 Typical Example Minimum Characteristics Value Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz I Quadrant III Quadrant 100 7 100 Rate of Rise of Off-State Voltage (V/µs) Gate Trigger Current vs. Gate Current Pulse Width Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Characteristics Test Circuits 6Ω 6Ω IFGT I IRGT I IRGT III 102 7 5 4 3 2 A 6V V Test Procedure I A 6V 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) REJ03G0339-0300 Page 5 of 6 Rev.3.00 Nov 30, 2007 V V 330Ω Test Procedure II 6Ω 101 0 10 A 6V 330Ω 330Ω Test Procedure III BCR10CS-12LA Package Dimensions Previous Code TO-220S RENESAS Code PRSS0004AB-A 1.5Max +0.3 3.0 –0.5 Unit: mm 4.5 1.5Max 10.5Max MASS[Typ.] 1.2g 1.3 0 +0.3 –0 (1.5) JEITA Package Code SC-83 8.6 ± 0.3 9.8 ± 0.5 Package Name TO-220S 1 5 0.5 2.6 ± 0.4 4.5 0.8 Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Taping Quantity Plastic Magazine (Tube) 1000 50 Type name – T +Direction (1 or 2) +1 Standard order code example BCR10CS-12LA-T11 Type name BCR10CS-12LA Standard order code Note : Please confirm the specification about the shipping in detail. REJ03G0339-0300 Page 6 of 6 Rev.3.00 Nov 30, 2007 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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