BCR25RM-12LB Triac Medium Power Use REJ03G1715-0100 Rev.1.00 Jul 10, 2008 Features • • • • • The product guaranteed maximum junction temperature of 150°C • Insulated Type • Planar Type IT (RMS) : 25 A VDRM: 600 V IFGTI, IRGTI, IRGTIII: 50 mA Viso: 2000 V Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Contactless AC switch, electric heater control, light dimmer, on/off and speed control of small induction motor, on/off control of copier lamp Maximum Ratings Parameter Repetitive peak off-state voltage Note1 Non-repetitive peak off-state voltage Note1 Notes: 1. Gate open. REJ03G1715-0100 Rev.1.00 Jul 10, 2008 Page 1 of 7 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V BCR25RM-12LB Symbol Ratings Unit RMS on-state current Parameter IT (RMS) 25 A Surge on-state current ITSM 250 A I2t 313 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 –40 to +150 –40 to +150 5.2 2000 W W V A °C °C g V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc = 96°C 50 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 50 Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. — — Typ. — — Max. 3.0/5.0 1.5 Unit mA V Test conditions Tj = 125°C /150°C, VDRM applied Tc = 25°C, ITM = 40 A, instantaneous measurement Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 2.0 2.0 2.0 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger curentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 50 50 50 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD Rth (j-c) 0.2/0.1 — — — — 1.7 V °C/W Tj = 125°C /150°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 10/1 — — V/µs Tj = 125°C /150°C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutation voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125/150°C 2. Rate of decay of on-state commutating current (di/dt)c = –13 A/ms 3. Peak off-state voltage VD = 400 V REJ03G1715-0100 Rev.1.00 Jul 10, 2008 Page 2 of 7 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR25RM-12LB Performance Curves Maximum On-State Characteristics Rated Surge On-State Current Surge On-State Current (A) 400 102 Tj = 150°C 101 Tj = 25°C 100 0.5 1.0 1.5 2.0 2.5 3.0 102 VGT = 2.0 V PGM = 5 W PG(AV) = 0.5 W IGM = 2 A 100 7 5 3 2 VGD = 0.1 V 5 7103 2 3 5 7104 103 Typical Example 102 IFGT I IRGT I IRGT III 101 -40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 101 -40 Gate Trigger Current (Tj = 25°C) VGM = 10 V × 100 (%) Gate Trigger Current vs. Junction Temperature 0 40 80 120 Junction Temperature (°C) REJ03G1715-0100 Rev.1.00 Jul 10, 2008 Page 3 of 7 160 Transient Thermal Impedance (°C/W) Gate Voltage (V) × 100 (%) Gate Trigger Voltage (Tj = t°C) 101 Gate Characteristics (I, II and III) 10–1 IFGT I, IRGT I, IRGT III 7 5 1 10 2 3 5 7 102 2 3 Gate Trigger Voltage (Tj = 25°C) 100 Conduction Time (Cycles at 50 Hz) 3 2 3 2 200 On-State Voltage (V) 5 101 7 5 300 0 100 3.5 Gate Trigger Current (Tj = t°C) On-State Current (A) 103 102 2.0 103 104 100 101 1.8 1.6 1.4 1.2 1.0 0.8 0.6 1.4 1.0 0 10-1 102 Conduction Time (Cycles at 50 Hz) BCR25RM-12LB Allowable Case Temperature vs. RMS On-State Current Maximum On-State Power Dissipation 160 20 10 360° Conduction Resistive, inductive loads 0 10 40 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 10 20 30 40 Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 140 100 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 80 160 160 t2.3 120 60 Ambient Temperature (°C) All fins are blackpainted aluminum and greased 120 120 t2.3 40 100 100 t2.3 20 10 20 30 120 100 80 60 40 20 0 1 2 3 4 5 RMS On-State Current (A) Breakover Voltage vs. Junction Temperature Repetitive Peak Off-State Current vs. Junction Temperature Typical Example 102 0 40 80 120 Junction Temperature (°C) REJ03G1715-0100 Rev.1.00 Jul 10, 2008 Page 4 of 7 160 × 100 (%) RMS On-State Current (A) 103 101 -40 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 0 40 Repetitive Peak Off-State Current (Tj = t°C) Ambient Temperature (°C) 30 100 RMS On-State Current (A) 0 0 × 100 (%) 20 120 RMS On-State Current (A) 160 Breakover Voltage (Tj = t°C) Case Temperature (°C) 30 0 Breakover Voltage (Tj = 25°C) Curves apply regardless of conduction angle 140 Repetitive Peak Off-State Current (Tj = 25°C) On-State Power Dissipation (W) 40 106 Typical Example 105 104 103 102 -40 0 40 80 120 Junction Temperature (°C) 160 BCR25RM-12LB Latching Current vs. Junction Temperature 103 103 Latching Current (mA) Typical Example 102 101 -40 0 40 80 120 T2+, G– Typical Example Distribution 102 101 T2–, G– Typical Example 100 -40 160 T2+, G+ Typical Example 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150°C) 160 Typical Example Tj = 125°C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 102 103 104 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Junction Temperature (°C) 160 Typical Example Tj = 150°C 140 120 100 80 III Quadrant 60 40 I Quadrant 20 0 101 102 103 104 Rate of Rise of Off-State Voltage (V/µs) Rate of Rise of Off-State Voltage (V/µs) Commutation Characteristics (Tj = 125°C) Commutation Characteristics (Tj = 150°C) 102 7 5 102 7 5 3 2 Typical Example Tj = 125°C IT = 4 A τ = 500 µs VD = 200 V f = 3 Hz Main Voltage (dv/dt)c Time Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Holding Current (Tj = t°C) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Holding Current (Tj = 25°C) × 100 (%) Holding Current vs. Junction Temperature VD Main Current IT (di/dt)c τ Time I Quadrant 101 7 5 3 2 100 7 3 III Quadrant 5 7 101 2 3 5 7 102 2 Rate of Decay of On-State Commutating Current (A/ms) REJ03G1715-0100 Rev.1.00 Jul 10, 2008 Page 5 of 7 3 3 2 101 7 5 3 2 Typical Example Tj = 150°C IT = 4 A τ = 500 µs VD = 200 V f = 3 Hz Main Voltage (dv/dt)c Time VD Main Current IT (di/dt)c τ Time III Quadrant I Quadrant Minimum Characteristics 100 Value 7 3 5 7 101 2 3 5 7 102 2 Rate of Decay of On-State Commutating Current (A/ms) 3 BCR25RM-12LB Gate Trigger Current (tw) Gate Trigger Current (DC) × 100 (%) Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 4 3 2 Typical Example IFGT I IRGT III IRGT I 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω Recommended Circuit Values Around The Triac Load 6Ω C1 A 6V V Test Procedure I V A V 330Ω Test Procedure III REJ03G1715-0100 Rev.1.00 Jul 10, 2008 Page 6 of 7 C0 R0 330Ω Test Procedure II 6Ω 6V R1 A 6V 330Ω C1 = 0.1 to 0.47µF C0 = 0.1µF R0 = 100Ω R1 = 47 to 100Ω BCR25RM-12LB Package Dimensions Previous Code TO-3PFM / TO-3PFMV 15.6 ± 0.3 + 0.4 – 0.2 2.0 ± 0.3 2.7 ± 0.3 φ3.2 Unit: mm 5.5 ± 0.3 3.2 ± 0.3 4.0 ± 0.3 2.6 0.86 1.6 0.86 0.66 5.45 ± 0.5 MASS[Typ.] 5.2g 21.0 ± 0.5 RENESAS Code PRSS0003ZA-A 5.0 ± 0.3 JEITA Package Code SC-93 5.0 ± 0.3 19.9 ± 0.3 Package Name TO-3PFM + 0.2 – 0.1 0.2 0.9 +– 0.1 5.45 ± 0.5 Order Code Lead form Straight type Standard packing Magazine (Tube) Quantity 30 Standard order code Type name Note : Please confirm the specification about the shipping in detail. REJ03G1715-0100 Rev.1.00 Jul 10, 2008 Page 7 of 7 Standard order code example BCR25RM-12LB Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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