BCR12PM-12LG Triac Medium Power Use REJ03G1510-0100 Rev.1.00 Feb 14, 2007 Features • • • • • The Product guaranteed maximum junction temperature 150°C • Insulated Type • Planar Type • UL Recognized : Yellow Card No. E223904 File No.E80271 IT (RMS) : 12 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 30 mA Viso : 2000V Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F ) 2 3 1 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 2 3 Applications Switching mode power supply, light dimmer, electronic switch, hair dryer, Television, Stereo system, refrigerator, Washing machine, infrared kotatsu, and carper, small motor controller, SS relay, solenoid driver, copying machine, electric tool, electric heater control, and other general purpose control applications Parameter Symbol Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.1.00 Feb 14, 2007 page 1 of 7 VDRM VDSM Voltage class 12 600 720 Unit V V BCR12PM-12LG Parameter RMS on-state current Symbol IT (RMS) Ratings 12 Unit A Surge on-state current ITSM 120 A I2 t 60 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 –40 to +150 –40 to +150 2.0 2000 W W V A °C °C g V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360°conduction, Tc = 92°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1 • T2 • G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current Symbol IDRM Min. — Typ. — Max. 2.0 Unit mA VTM — — 1.6 V Tc = 25°C, ITM = 20 A, instantaneous measurement On-state voltage Test conditions Tj = 150°C, VDRM applied Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger curentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 30 30 30 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD Rth (j-c) 0.2/0.1 — — — — 4.0 V °C/W Tj = 125°C/150°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 10/1 — — V/µs Tj = 125°C/150°C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutation voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (j-c) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = –6.0 A/ms 3. Peak off-state voltage VD = 400 V Rev.1.00 Feb 14, 2007 page 2 of 7 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR12PM-12LG Performance Curves Maximum On-State Characteristics 3 2 Tj = 150°C 101 7 5 3 2 100 7 5 0.5 Tj = 25°C 1.0 1.5 2 2.5 3.0 3.5 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 140 120 100 80 60 40 20 2 3 4 5 7 101 2 3 4 5 7 102 Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V PGM = 5W PG(AV) = 0.5W IGM = 2A 100 7 5 3 2 IRGT I IFGT I, IRGT III VGD = 0.1V 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 103 7 5 4 3 2 Typical Example IRGT I, IRGT III 102 7 5 4 3 2 IFGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Rev.1.00 160 On-State Voltage (V) 101 7 5 3 VGT = 1.5V 2 10–1 180 0 100 4.0 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) 5 3 2 Gate Voltage (V) Surge On-State Current (A) 200 Feb 14, 2007 page 3 of 7 Transient Thermal Impedance (°C/W) On-State Current (A) 102 7 5 Rated Surge On-State Current 102 4.5 103 104 100 101 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10–1 102 Conduction Time (Cycles at 60Hz) BCR12PM-12LG 103 7 5 3 2 No Fins 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 Maximum On-State Power Dissipation 16 On-State Power Dissipation (W) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 4 2 0 2 4 6 8 10 12 14 16 Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 2 6 4 8 10 12 14 160 Ambient Temperature (°C) Curves apply regardless of conduction angle 16 140 120 100 All fins are black painted aluminum and greased 120 120 t2.3 100 100 t2.3 60 60 t2.3 80 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 2 6 4 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) Feb 14, 2007 page 4 of 7 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) 6 RMS On-State Current (A) 160 Ambient Temperature (°C) 8 Conduction Time (Cycles at 60Hz) 140 Rev.1.00 12 360° Conduction Resistive, 10 inductive loads 0 160 0 14 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) BCR12PM-12LG 103 7 5 4 3 2 Latching Current (mA) Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 103 7 5 3 2 Distribution T2+, G– Typical Example 102 7 5 3 2 101 7 5 3 2 T2+, G+ Typical Example T2–, G– 100 –40 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Junction Temperature (°C) 160 Typical Example Tj = 125°C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) Commutation Characteristics (Tj=125°C) 160 Typical Example Tj = 150°C 140 120 100 80 III Quadrant 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/µs) Rev.1.00 Latching Current vs. Junction Temperature Feb 14, 2007 page 5 of 7 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature 102 Typical Example 7 Tj = 125°C 5 IT = 4A 3 τ = 500µs 2 VD = 200V f = 3Hz 101 7 5 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Minimum Characteristics Value I Quadrant 3 2 100 7 100 III Quadrant 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) BCR12PM-12LG Gate Trigger Current vs. Gate Current Pulse Width 102 Typical Example 7 5 Tj = 150°C IT = 4A 3 τ = 500µs 2 VD = 200V f = 3Hz 101 7 5 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Commutation Characteristics (Tj=150°C) Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time I Quadrant 3 2 100 7 100 III Quadrant Minimum Characteristics Value 2 3 5 7 101 2 3 5 7 102 103 7 5 4 3 2 Typical Example IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac 6Ω 6Ω Load C1 A 6V V V 6Ω A V 330Ω Test Procedure III Rev.1.00 Feb 14, 2007 330Ω Test Procedure II Test Procedure I 6V R1 A 6V 330Ω page 6 of 7 C0 R0 C1 = 0.1 to 0.47µF C0 = 0.1µF R0 = 100Ω R1 = 47 to 100Ω BCR12PM-12LG Package Dimensions JEITA Package Code SC-67 Package Name TO-220F Previous Code RENESAS Code PRSS0003AA-A MASS[Typ.] 2.0g Unit: mm 10.5Max 2.8 17 8.5 5.0 1.2 5.2 φ3.2 ± 0.2 13.5Min 3.6 1.3Max 0.8 2.54 0.5 2.6 4.5 2.54 Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 100 Type name Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00 Feb 14, 2007 page 7 of 7 Standard order code example BCR12PM-12LG BCR12PM-12LG-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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