BCR20RM-30LA Triac Medium Power Use REJ03G1725-0100 Rev.1.00 Jul 23, 2008 Features • IT (RMS) : 20 A • VDRM : 1500 V • IFGTI, IRGTI, IRGT III : 50 mA • Viso : 2000 V • Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Motor and heater Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Note1 Non-repetitive peak off-state voltage REJ03G1725-0100 Rev.1.00 Jul 23, 2008 Page 1 of 6 Symbol Voltage class 30 Unit VDRM 1500 V VDSM 1600 V BCR20RM-30LA Parameter Ratings Unit RMS on-state current Symbo l IT (RMS) 20 A Commercial frequency, sine full wave 360° conduction, Tc = 83°C Surge on-state current ITSM 200 A 50 Hz sinewave 1 full cycle, peak value, non-repetitive I2t 200 A2s PGM PG (AV) VGM IGM Tj Tstg — 5 0.5 10 3 – 40 to +125 – 40 to +125 5.2 W W V A °C °C g Viso 2000 V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Value corresponding to 1 cycle of half wave 50 Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. — — Typ. — — Max. 10 1.6 Unit mA V Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 30 A, Instantaneous measurement Gate trigger voltage Note2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 3.0 3.0 3.0 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger current Note2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 50 50 50 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD Rth (j-c) 0.2 — — — — 1.6 V °C/W Tj = 125°C, VD = 1/2 VDRM Junction to case Note3 (dv/dt)c 20 — — V/µs Tj = 125°C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.4°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = –10 A/ms 3. Peak off-state voltage VD = 400 V REJ03G1725-0100 Rev.1.00 Jul 23, 2008 Page 2 of 6 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR20RM-30LA Performance Curves Maximum On-State Characteristics Rated Surge On-State Current Surge On-State Current (A) 240 Tj = 25°C 102 Tj = 125°C 101 100 0.5 1.0 1.5 2.0 2.5 3.0 40 2 3 5 7 101 2 3 5 7 102 100 PG(AV) = 0.5 W IFGM = 3 A IGT = 50 mA 10–1 VGD = 0.2 V 102 103 104 Gate Trigger Current (Tj = 25°C) PGM = 5 W VGT = 3.0 V × 100 (%) Gate Trigger Current vs. Junction Temperature 103 Typical Example IRGT III IRGT I 102 IFGT I 101 -60 -40 -20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) Typical Example 102 101 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (°C) REJ03G1725-0100 Rev.1.00 Jul 23, 2008 Page 3 of 6 Transient Thermal Impedance (°C/W) Gate Voltage (V) × 100 (%) Gate Trigger Voltage (Tj = t°C) 80 Gate Characteristics (I, II and III) 10–2 101 Gate Trigger Voltage (Tj = 25°C) 120 Conduction Time (Cycles at 50 Hz) VFGM = 10 V 103 160 On-State Voltage (V) 102 101 200 0 100 3.5 Gate Trigger Current (Tj = t°C) On-State Current (A) 103 102 2.0 103 104 100 101 1.8 1.6 1.4 1.2 1.0 0.8 0.6 1.4 1.0 0 10-1 102 Conduction Time (Cycles at 50 Hz) BCR20RM-30LA Allowable Case Temperature vs. RMS On-State Current Maximum On-State Power Dissipation 160 30 360° Conduction Resistive, inductive loads 20 10 0 0 5 10 15 20 25 30 80 60 40 360° Conduction 20 Resistive, inductive loads 0 5 10 15 0 20 25 30 Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 140 Ambient Temperature (°C) All fins are black painted aluminum and greased Natural convection 120 100 160 160 t2.3 80 120 120 t2.3 60 100 100 t2.3 40 20 5 10 15 20 25 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 30 0 0.5 1 1.5 2 2.5 3 3.5 RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature Typical Example 104 103 102 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (°C) REJ03G1725-0100 Rev.1.00 Jul 23, 2008 Page 4 of 6 Holding Current (Tj = 25°C) 105 × 100 (%) RMS On-State Current (A) Holding Current (Tj = t°C) Ambient Temperature (°C) × 100 (%) 100 RMS On-State Current (A) 0 0 Repetitive Peak Off-State Current (Tj = 25°C) 120 RMS On-State Current (A) 160 Repetitive Peak Off-State Current (Tj = t°C) Curves apply regardless of conduction angle 140 Case Temperature (°C) On-State Power Dissipation (W) 40 4 103 Typical Example 102 101 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (°C) BCR20RM-30LA Latching Current vs. Junction Temperature 102 101 T2–, G– Typical Example T2+, G+ Typical Example Breakover Voltage (dv/dt = xV/µs) Breakover Voltage (dv/dt = 1V/µs) × 100 (%) 100 -60 -40 -20 0 20 40 60 80 100 120 140 × 100 (%) Typical Example 120 80 40 0 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage Commutation Characteristics 160 Typical Example Tj = 125°C 140 120 100 80 III Quadrant 60 40 20 0 101 I Quadrant 102 103 104 Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) 160 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Gate Trigger Current (DC) Breakover Voltage (Tj = 25°C) T2+, G– Typical Example Distribution 103 Typical Example IRGT III IFGT I IRGT I 102 101 100 101 Gate Current Pulse Width (µs) REJ03G1725-0100 Rev.1.00 Jul 23, 2008 Page 5 of 6 102 102 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Latching Current (mA) 103 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage vs. Junction Temperature Typical Example Tj = 125°C IT = 4 A τ = 500µs VD = 200V f = 3Hz Minimum Characteristics 1 Value 10 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 100 100 101 III Quadrant I Quadrant 102 Rate of Decay of On-State Commutating Current (A/ms) 103 BCR20RM-30LA Gate Trigger Characteristics Test Circuits Load 6Ω 6Ω Recommended Circuit Values Around The Triac C1 A 6V V Test Procedure I V A V 330Ω Test Procedure III REJ03G1725-0100 Rev.1.00 Jul 23, 2008 Page 6 of 6 C0 R0 330Ω Test Procedure II 6Ω 6V R1 A 6V 330Ω C1 = 0.1 to 0.47µF C0 = 0.1µF R0 = 100Ω R1 = 47 to 100Ω BCR20RM-30LA Package Dimensions Previous Code TO-3PFM / TO-3PFMV 15.6 ± 0.3 + 0.4 – 0.2 2.0 ± 0.3 2.7 ± 0.3 φ3.2 MASS[Typ.] 5.2g Unit: mm 5.5 ± 0.3 3.2 ± 0.3 4.0 ± 0.3 2.6 0.86 1.6 0.86 0.66 21.0 ± 0.5 RENESAS Code PRSS0003ZA-A 5.0 ± 0.3 JEITA Package Code SC-93 5.0 ± 0.3 19.9 ± 0.3 Package Name TO-3PFM + 0.2 – 0.1 0.2 0.9 +– 0.1 5.45 ± 0.5 5.45 ± 0.5 Order Code Lead form Straight type Standard packing Magazine (Tube) Quantity 30 Standard order code Type name Note : Please confirm the specification about the shipping in detail. REJ03G1725-0100 Rev.1.00 Jul 23, 2008 Page 7 of 6 Standard order code example BCR20RM-30LA Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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