RENESAS BCR8PM-12LG

BCR8PM-12LG
Triac
Medium Power Use
REJ03G1508-0100
Rev.1.00
Feb 14, 2007
Features
•
•
•
•
• The Product guaranteed maximum junction
temperature 150°C
• Insulated Type
• Planar Type
• UL Recognized : Yellow Card No. E223904
File No.E80271
IT (RMS) : 8 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 30 mA
Viso : 2000 V
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F )
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
1
2 3
Applications
Switching mode power supply, light dimmer, electronic flasher unit, Television, Stereo system, refrigerator, Washing
machine, infrared kotatsu, and carper, solenoid driver, small motor control, copying machine, electric tool, electric
heater control, and other general purpose control applications
Parameter
Symbol
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Rev.1.00
Feb 14, 2007
page 1 of 7
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
BCR8PM-12LG
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
8
Unit
A
Surge on-state current
ITSM
80
A
I2 t
26
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
–40 to +150
–40 to +150
2.0
2000
W
W
V
A
°C
°C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 107°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1 • T2 • G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
Symbol
IDRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
VTM
—
—
1.6
V
Tc = 25°C, ITM = 12 A,
instantaneous measurement
On-state voltage
Test conditions
Tj = 150°C, VDRM applied
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate trigger curentNote2
Ι
ΙΙ
ΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
—
—
—
—
—
—
30
30
30
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
VGD
Rth (j-c)
0.2/0.1
—
—
—
—
4.3
V
°C/W
Tj = 125°C/150°C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
10/1
—
—
V/µs
Tj = 125°C/150°C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (j-c) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –4.0 A/ms
3. Peak off-state voltage
VD = 400 V
Rev.1.00
Feb 14, 2007
page 2 of 7
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR8PM-12LG
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
2
3
2
Tj = 150°C
1
10
7
5
3
2
Tj = 25°C
100
7
5
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
60
50
40
30
20
10
0 0
10
2 3
5 7 10
1
2 3
5 7 10
Gate Trigger Current vs.
Junction Temperature
PG(AV) = 0.5W
PGM = 5W
IGM = 2A
VGT = 1.5V
–1
7 IFGT I IRGT I, IRGT III
VGD = 0.1V
5
1
2
3
10 2 3 5 710 2 3 5 710 2 3 5 7104
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
70
Gate Characteristics (I, II and III)
103
7
5
2
Typical Example
3
2
IRGT III
102
7
5
IRGT I, IFGT I
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
Typical Example
3
2
2
10
7
5
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Rev.1.00
80
Conduction Time (Cycles at 60Hz)
100
7
5
3
2
10
90
On-State Voltage (V)
3
2 VGM = 10V
101
7
5
3
2
Surge On-State Current (A)
100
Feb 14, 2007
page 3 of 7
Transient Thermal Impedance (°C/W)
On-State Current (A)
10
7
5
102
5.0
103
104
100
101
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10–1
102
Conduction Time (Cycles at 60Hz)
BCR8PM-12LG
10
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1 1
2
4
On-State Power Dissipation (W)
12 360° Conduction
Resistive,
10 inductive loads
8
6
4
2
0
2
4
6
8
10 12 14 16
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
Curves apply regardless
of conduction angle
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
14
5
Ambient Temperature (°C)
Case Temperature (°C)
3
10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710
140
0
2
4
6
8
120 120 t2.3
120
100 100 t2.3
100
60 60 t2.3
80
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
60
40
20
0
10 12 14 16
All fins are black painted
aluminum and greased
140
0
2
4
6
8
10 12 14 16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Ambient Temperature (°C)
16
No Fins
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
Rev.1.00
Maximum On-State Power Dissipation
3
Feb 14, 2007
page 4 of 7
3.0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
–1
10
Typical Example
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
BCR8PM-12LG
3
103
Typical Example
Latching Current (mA)
7
5
4
3
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140 160
10
7
5
3
2
Distribution
102
7
5
3
2
T2+, G–
Typical Example
1
10
7
5
3 T +, G+
2 2– – Typical Example
T2 , G
100
–40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140 160
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Junction Temperature (°C)
160
Typical Example
Tj = 125°C
140
120
100
80
60
III Quadrant
40
20
I Quadrant
0 1
2
3
4
10 2 3 5 710 2 3 5 710 2 3 5 710
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
Commutation Characteristics (Tj = 125°C)
160
140
Typical Example
Tj = 150°C
120
100
80
60
40
III Quadrant
20
I Quadrant
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/µs)
Rev.1.00
Latching Current vs.
Junction Temperature
Feb 14, 2007
page 5 of 7
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5 Minimum
Characteristics
3
2
0
Value
10
7 0
10
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I Quadrant
III Quadrant
2 3
5 7 101
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
BCR8PM-12LG
Gate Trigger Current vs.
Gate Current Pulse Width
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Commutation Characteristics (Tj = 150°C)
Typical Example
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
III Quadrant
I Quadrant
3
2
Minimum
Characteristics
Value
100
7 0
10
2 3
5 7 10
1
2 3
5 7 10
2
103
7
5
Typical Example
IFGT I
IRGT I
3
2
IRGT III
102
7
5
3
2
101 0
10
2 3
5 7 10
1
2 3
5 7 10
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
Recommended Circuit Values Around The Triac
6Ω
6Ω
Load
C1
A
6V
Test Procedure I
V
Test Procedure II
6Ω
A
6V
V
330Ω
Test Procedure III
Feb 14, 2007
page 6 of 7
R1
A
6V
330Ω
V
Rev.1.00
2
330Ω
C0
C1 = 0.1 to 0.47µF
R1 = 47 to 100Ω
R0
C0 = 0.1µF
R0 = 100Ω
BCR8PM-12LG
Package Dimensions
JEITA Package Code
SC-67
Package Name
TO-220F
Previous Code

RENESAS Code
PRSS0003AA-A
MASS[Typ.]
2.0g
Unit: mm
10.5Max
2.8
17
8.5
5.0
1.2
5.2
φ3.2 ± 0.2
13.5Min
3.6
1.3Max
0.8
2.54
0.5
2.6
4.5
2.54
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Vinyl sack
100 Type name
Lead form
Plastic Magazine (Tube)
50 Type name – Lead forming code
Note : Please confirm the specification about the shipping in detail.
Rev.1.00
Feb 14, 2007
page 7 of 7
Standard order
code example
BCR8PM-12LG
BCR8PM-12LG-A8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.0