BCR3PM-12LG Triac Medium Power Use REJ03G1506-0100 Rev.1.00 Feb 14, 2007 Features • • • • • The Product guaranteed maximum junction temperature 150°C • Insulated Type • Planar Type • UL Recognized : Yellow Card No. E223904 File No.E80271 IT (RMS) : 3 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 20 mA Viso : 2000 V Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F ) 2 3 1 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 2 3 Applications AC no junction Switching, light dimmer, electronic blanket, Control of household electrical appliance such as electric fans, solenoid driver, small motor control, and other general purpose control applications Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.1.00 Feb 14, 2007 page 1 of 7 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V BCR3PM-12LG Parameter RMS on-state current Symbol IT (RMS) Ratings 3.0 Unit A Surge on-state current ITSM 30 A I2 t 3.7 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 –40 to +150 –40 to +150 2.0 2000 W W V A °C °C g V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360°conduction, Tc = 130°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1 • T2 • G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current Symbol IDRM Min. — Typ. — Max. 2.0 Unit mA VTM — — 1.5 V Tc = 25°C, ITM = 4.5 A, instantaneous measurement On-state voltage Test conditions Tj = 150°C, VDRM applied Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger curentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 20 20 20 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD Rth (j-c) 0.2/0.1 — — — — 5.2 V °C/W Tj = 125°C/150°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 5/1 — — V/µs Tj = 125°C/150°C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutation voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (j-c) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = –1.5 A/ms 3. Peak off-state voltage VD = 400 V Rev.1.00 Feb 14, 2007 page 2 of 7 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR3PM-12LG Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 10 7 5 3 2 101 7 5 3 2 Tj = 150°C 100 7 5 3 2 Tj = 25°C –1 25 20 15 10 5 2 3 5 7 10 1 2 3 5 7 10 Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature PG(AV) = 0.5W VGM = 10V Gate Voltage (V) 30 On-State Voltage (V) 102 PGM = 5W 101 VGT 100 IRGT I VGD = 0.1V 10–1 IGM = 2A IFGT I, IRGT III 10–2 100 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 35 0 0 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 101 102 103 104 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) 10 Surge On-State Current (A) 40 103 7 5 2 Typical Example IRGT III 3 2 2 10 7 5 IFGT I, IRGT I 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 Typical Example 3 2 102 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Rev.1.00 Feb 14, 2007 page 3 of 7 Transient Thermal Impedance (°C/W) On-State Current (A) 2 102 5.5 103 104 100 101 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10–1 102 Conduction Time (Cycles at 60Hz) BCR3PM-12LG Allowable Case Temperature vs. RMS On-State Current 5.0 160 4.5 140 4.0 Case Temperature (°C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 360° Conduction 3.5 Resistive, 3.0 inductive loads 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 120 100 100 t2.3 60 60 t2.3 80 60 All fins are black painted aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Ambient Temperature (°C) 120 120 t2.3 140 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 6 10 7 5 3 2 5 10 7 5 3 2 4 10 7 5 3 2 3 10 7 5 3 2 2 10 Typical Example –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Rev.1.00 Feb 14, 2007 page 4 of 7 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Ambient Temperature (°C) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) 100 RMS On-State Current (A) 160 100 Curves apply regardless of conduction angle 120 3.0 3 10 7 5 Typical Example 3 2 102 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) BCR3PM-12LG Breakover Voltage vs. Junction Temperature Distribution T2+, G– Typical Example 102 7 5 3 2 101 7 5 3 T +, G+ 2 2– – Typical Example T2 , G 100 –60 –40–20 0 20 40 60 80 100 120 140 160 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 1 2 3 4 10 2 3 5 710 2 3 5 710 2 3 5 710 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Junction Temperature (°C) 160 Typical Example Tj = 150°C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 1 2 3 4 10 2 3 5 710 2 3 5 710 2 3 5 710 Rate of Rise of Off-State Voltage (V/µs) Rate of Rise of Off-State Voltage (V/µs) Commutation Characteristics (Tj=125°C) Commutation Characteristics (Tj=150°C) 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 1 10 7 5 3 Minimum Characteristics 2 Value 100 7 0 10 Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Latching Current (mA) 3 10 7 5 3 2 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Latching Current vs. Junction Temperature III Quadrant I Quadrant 2 3 5 7 10 1 2 3 5 7 10 Rate of Decay of On-State Commutating Current (A/ms) Rev.1.00 Feb 14, 2007 page 5 of 7 2 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 1 10 7 5 III Quadrant 3 2 100 7 0 10 Typical Example Tj = 150°C IT = 4A τ = 500µs VD = 200V f = 3Hz I Quadrant Minimum Characteristics Value 2 3 5 7 10 1 2 3 5 7 10 Rate of Decay of On-State Commutating Current (A/ms) 2 BCR3PM-12LG Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 3 10 7 5 Typical Example IRGT III IRGT I 3 2 IFGT I 102 7 5 3 2 1 10 0 10 2 3 5 7 10 1 2 3 5 7 10 2 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω Recommended Circuit Values Around The Triac Load C1 A 6V V Test Procedure I 6Ω A 6V V 330Ω Test Procedure III Rev.1.00 Feb 14, 2007 page 6 of 7 R1 A 6V 330Ω V 330Ω Test Procedure II C0 R0 C1 = 0.1 to 0.47µF C0 = 0.1µF R0 = 100Ω R1 = 47 to 100Ω BCR3PM-12LG Package Dimensions Package Name TO-220F JEITA Package Code SC-67 Previous Code RENESAS Code PRSS0003AA-A MASS[Typ.] 2.0g Unit: mm 10.5Max 2.8 17 8.5 5.0 1.2 5.2 φ3.2 ± 0.2 13.5Min 3.6 1.3Max 0.8 2.54 0.5 2.6 4.5 2.54 Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 100 Type name Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. 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