2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier REJ03G0482-0200 (Previous ADE-208-1387A (Z)) Rev.2.00 Dec.09.2004 Features • • • • • Small size package: MPAK (SC–59A) Large Maximum current: IC = –1 A Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A) High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) Complementary pair with 2SD2655 Outline MPAK 3 1 1. Emitter 2. Base 3. Collector 2 Note: Marking is “WL-“. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base Voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC ic(peak) PC Tj Tstg *When using alumina ceramic board (25 x 60 x 0.7 mm) Rev.2.00, Dec.09.2004, page 1 of 4 Ratings −60 −50 –6 –1 –2 800* 150 −55 to +150 Unit V V V A A mW °C °C 2SB1691 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE Min –60 –50 –6 200 Typ Max –100 –100 500 Unit V V V nA nA Collector to emitter saturation voltage VCE(sat) –0.2 –0.3 V Base to emitter saturation voltage VBE(sat) –0.95 –1.2 V fT 310 MHz Cob 9.8 pF Gain bandwidth product Collector output capacitance Test Condition IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –50 V, IE = 0 VEB = –5 V, IC = 0 VCE = –2 V, IC = –0.1 A IC = –0.5 A, IB = –0.05 A, Pulse test IC = –0.5 A, IB = –0.05 A, Pulse test VCE = –2 V, IC = –0.1 A VCB = –10 V, IE = 0, f = 1 MHz Main Characteristics Typical Output Characteristics (1) –200 800 400 200 50 100 150 A 0µ –30 0µ A 0 µA –20 –100 –150 µA –100 µA IB = –50 µA 0 200 A –25 –2 –4 –6 Collector to Emitter Voltage Ta (°C) Ambient Temperature –35 IC (mA) 1000 0 0µ Pulse When using alumina ceramic board S = 25 mm x 60 mm, t = 0.7 mm Collector Current Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 1200 –8 –10 VCE (V) Typical Output Characteristics (2) –6 mA 5 mA – mA –4 Typical Transfer Characteristics – mA Collector Current IB = –1 –300 –200 –100 Pulse –0.4 –0.8 –1.2 Collector to Emitter Voltage Rev.2.00, Dec.09.2004, page 2 of 4 –1.6 IC (mA) –400 0 VCE = –2 V Pulse –2 mA –7 IC (mA) Collector Current –1000 A 3m m A –500 –100 –10 –1 –2.0 VCE (V) 0 –0.2 –0.4 –0.6 Base to Emitter Voltage –0.8 VBE (V) –1.0 DC Current Transfer Ratio vs. Collector Current DC Current Transfer Ratio hFE 1000 100 10 VCE = –2 V Pulse 1 –1 –10 –100 –1000 Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) 2SB1691 Saturation Voltage vs. Collector Current –2 –1 VBE(sat) –0.1 VCE(sat) –0.01 IC/IB = 10 Pulse –0.002 –1 Collector Current IC (mA) Collector Current –100 IC –1000 (mA) Gain Bandwidth Product vs. Collector Current 1000 100 fT (MHz) 500 f = 1MHz IE = 0 Gain Bandwidth Product Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance –10 10 1 –0.1 –1 –10 Collector to Base Voltage Rev.2.00, Dec.09.2004, page 3 of 4 –100 VCB (V) 400 VCE = –2 V Pulse 300 200 100 0 –1 –10 Collector Current –100 IC (mA) –1000 2SB1691 Package Dimensions As of January, 2003 0.65 Unit: mm 0.95 0.95 1.9 ± 0.2 + 0.10 0 – 0.1 2.8 + 0.2 – 0.6 0.16 – 0.06 0.65 1.5 ± 0.15 0.10 0.4 +– 0.05 + 0.2 1.1 – 0.1 0.3 2.95 ± 0.2 Package Code JEDEC JEITA Mass (reference value) MPAK(T) — Conforms 0.011 g Ordering Information Part Name 2SB1691WL- Quantity 3000 pcs Shipping Container φ178 mm Taping Reel Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00, Dec.09.2004, page 4 of 4 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 © 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .2.0