CMPA2735075D

CMPA2735075D
75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA2735075D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based
monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or
gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to
Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach
enabling very wide bandwidths to be achieved.
Typical Performance Over 2.7-3.5 GHz
Parameter
(TC = 25˚C)
2.7 GHz
2.9 GHz
3.1 GHz
3.3 GHz
3.5 GHz
Units
Small Signal Gain
28
30
30
29
28
dB
Saturated Output Power, PSAT1
67
85
101
103
94
W
Power Gain @ P
22
24
25
25
24
dB
PAE @ PSAT1
48
59
61
61
61
%
1
SAT
Note : PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-8 mA.
1
Features
Applications
• 28 dB Small Signal Gain
• Civil and Military Pulsed Radar
• 80 W Typical PSAT
Amplifiers
• Operation up to 28 V
il 2012
Rev 1.1 – Apr
• High Breakdown Voltage
• High Temperature Operation
• Size 0.197 x 0.174 x 0.004 inches
Subject to change without notice.
www.cree.com/wireless
1
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
Rating
Units
Drain-source Voltage
VDSS
84
VDC
Gate-source Voltage
VGS
-10, +2
VDC
Storage Temperature
TSTG
-65, +150
˚C
TJ
225
˚C
RθJC
1.8
˚C/W
TS
320
˚C
Operating Junction Temperature
Thermal Resistance, Junction to Case (packaged)1
Mounting Temperature (30 seconds)
Note1 Eutectic die attach using 80/20 AuSn solder mounted to a 40 mil thick CuW carrier.
Electrical Characteristics (Frequency = 2.7 GHz to 3.5 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(TH)
-3.8
-3.0
-2.3
V
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
Saturated Drain Current1
IDS
19.6
27.4
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBD
84
100
–
V
VGS = -8 V, ID = 28 mA
Small Signal Gain1
S21
25
30
–
dB
VDD = 28 V, IDQ = 800 mA,
Frequency = 2.9 GHz
Small Signal Gain2
S21
24
28
–
dB
VDD = 28 V, IDQ = 800 mA,
Frequency = 3.5 GHz
Power Output1
POUT
66
85
–
W
Power Output2
POUT
72
94
–
W
Power Added Efficiency1
PAE
51
59
–
%
VDD = 28 V, IDQ = 800 mA,
Frequency = 2.9 GHz
Power Added Efficiency2
PAE
54
61
–
%
VDD = 28 V, IDQ = 800 mA,
Frequency = 3.5 GHz
GP
–
24
–
dB
VDD = 28 V, IDQ = 800 mA
Input Return Loss
S11
–
15
–
dB
VDD = 28 V, IDQ = 800 mA
Output Return Loss
S22
–
8
–
dB
VDD = 28 V, IDQ = 800 mA
VSWR
–
–
5:1
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 800 mA,
POUT = 75W CW
DC Characteristics
VDS = 10 V, ID = 28 mA
VDD = 28 V, IDQ = 800 mA,
Frequency = 2.9 GHz
RF Characteristics2
Power Gain
Output Mismatch Stress
VDD = 28 V, IDQ = 800 mA,
PIN ≤ 28 dBm, Frequency = 2.9 GHz
VDD = 28 V, IDQ = 800 mA,
PIN ≤ 28 dBm, Frequency = 3.5 GHz
Notes:
1
Scaled from PCM data.
2
All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 1%.
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
2
CMPA2735075D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Die Dimensions (units in microns)
Overall die size 5000 x 4420 (+0/-50) microns, die thickness 100 (+/-10) microns.
All Gate and Drain pads must be wire bonded for electrical connection.
Pad Number
Function
1
RF-IN
RF-Input pad. Matched to 50 ohm.
Description
Pad Size (microns)
150 x 200
Note
3
2
VG1_A
Gate control for stage 1. VG ~ 2.0 - 3.5 V.
200 x 200
1,2
3
VG1_B
Gate control for stage 1. VG ~ 2.0 - 3.5 V.
200 x 200
1,2
4
VD1_A
Drain supply for stage 1. VD = 28 V.
250 x 200
1
5
VD1_B
Drain supply for stage 1. VD = 28 V.
250 x 200
1
6
VG2_A
Gate control for stage 2A. VG ~ 2.0 - 3.5 V.
200 x 200
1
7
VG2_B
Gate control for stage 2B. VG ~ 2.0 - 3.5 V.
200 x 200
1
8
VD2_A
Drain supply for stage 2A. VD = 28 V.
500 x 200
1
9
VD2_B
Drain supply for stage 2B. VD = 28 V.
500 x 200
1
10
RF-Out
RF-Output pad. Matched to 50 ohm.
150 x 200
3
Notes:
1
Attach bypass capacitor to pads 2-9 per application circuit.
2
VG1_A and VG1_B are connected internally so it would be enough to connect either one for proper operation.
3
The RF Input and Output pad have a ground-signal-ground with a nominal pitch of 10 mil (250 um). The RF
ground pads are 100 x 100.
Die Assembly Notes:
•
Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure
application note at http://www.cree.com/products/wireless_appnotes.asp
•
•
•
•
•
•
Vacuum collet is the preferred method of pick-up.
The backside of the die is the Source (ground) contact.
Die back side gold plating is 5 microns thick minimum.
Thermosonic ball or wedge bonding are the preferred connection methods.
Gold wire must be used for connections.
Use the die label (XX-YY) for correct orientation.
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
3
CMPA2735075D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Block Diagram Showing Additional Capacitors & Output
Matching Section for Operation Over 2.7 to 3.5 GHz
C2
C4
C10
Vd
C9
C1
C3
Vg
VG1_B
RF_In
VD1_B
VD2_B
1
2
2
1
VG1_A
C11
VD1_A
C5
VG2_A
RF_Out
VD2_A
C7
C6
Designator
VG2_B
C8
C12
Description
Quantity
C1,C2,C3,C4,C5,C6,C7,C8
CAP, 120pF, +/-10%, SINGLE LAYER, 0.035”, Er 3300, 100V,
Ni/Au TERMINATION
8
C9,C10,C11,C12
CAP, 680pF, +/-10%, SINGLE LAYER, 0.070”, Er 3300, 100V,
Ni/Au TERMINATION
4
Notes:
1
The input, output and decoupling capacitors should be attached as close as possible to the
die- typical distance is 5 to 10 mils with a maximum of 15 mils.
2
The MMIC die and capacitors should be connected with 2 mil gold bond wires.
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4
CMPA2735075D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Typical Performance of the CMPA2735075D
Gain and Input Return Loss
Output Power and Power Added Efficiency
vs Frequency vs Frequency
VDDCMPA2735075D
= 28 V,Small
IDQSignal
= Response,
0.7 ACMPA2735075DVOutput
= 28 V, IDQ
= Efficiency
0.7 Avs. Frequency
Added
DD Power and Power
VDD=28V, IDQ=0.70A
40
VDD=28V, IDQ=0.70A
70
40
70
0
0
S22 (dB)
-20
-20
S11 (dB)
S21
PAE (%)
60
60
Output Power (dBm)
50
50
40
40
Pout
S11
PAE
S22
-40
30
-40
2.0
2.5
3.0
3.5
4.0
4.5
30
2.5
5.0
2.7
2.9
3.1
Associated Gain at Maximum Power
Added Efficiency vs Frequency V
= 28 V, I
3.7
Gain and Power Added Efficiency
vs Output Power
= 0.7 A
and 0.7
Power Added
Efficiency vs. Output Power
VDD =CMPA2735075D
28 V, IGain
=
A, Frequency
= 3.1 GHz
DQ
CMPA2735075D Associated Gain @ max PAE vs. Frequency
DD VDD=28V, IDQ=0.70A
DQ
30
3.5
Frequency (GHz)
Frequency (GHz)
3.3
VDD=28V, IDQ=0.70A, Freq=3.1GHz
40
80
35
25
70
Gain (dB)
60
15
10
50
PAE (%)
20
40
15
30
10
PAE (%)
25
Gain (dB)
Associated Gain (dB)
30
20
20
5
Gain
5
0
2.5
2.7
2.9
3.1
3.3
Frequency (GHz)
3.5
3.7
10
PAE
0
0
25
30
35
40
CMPA2735075D Rev 1.1
50
55
Output Power (dBm)
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
5
45
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
PAE (%)
20
S11 (dB), S22 (dB)
S21 (dB)
20
Output Power @ Maximum PAE (dBm)
S21 (dB)
Part Number System
CMPA2735075D
Package
Power Output (W)
Upper Frequency (GHz)
Lower Frequency (GHz)
Cree MMIC Power Amplifier Product Line
Parameter
Value
Units
Lower Frequency
2.7
GHz
Upper Frequency
3.5
GHz
Power Output
75
W
Bare Die
-
Package
Table 1.
Note: Alpha characters used in frequency
code indicate a value greater than 9.9 GHz.
See Table 2 for value.
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
6
CMPA2735075D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use. No license is granted by implication or otherwise under
any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities
and are provided for information purposes only. These values can and do vary in different applications, and actual
performance can vary over time. All operating parameters should be validated by customer’s technical experts for each
application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could
result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a
nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/wireless
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
7
CMPA2735075D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless