CMPA2735075D 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. Typical Performance Over 2.7-3.5 GHz Parameter (TC = 25˚C) 2.7 GHz 2.9 GHz 3.1 GHz 3.3 GHz 3.5 GHz Units Small Signal Gain 28 30 30 29 28 dB Saturated Output Power, PSAT1 67 85 101 103 94 W Power Gain @ P 22 24 25 25 24 dB PAE @ PSAT1 48 59 61 61 61 % 1 SAT Note : PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-8 mA. 1 Features Applications • 28 dB Small Signal Gain • Civil and Military Pulsed Radar • 80 W Typical PSAT Amplifiers • Operation up to 28 V il 2012 Rev 1.1 – Apr • High Breakdown Voltage • High Temperature Operation • Size 0.197 x 0.174 x 0.004 inches Subject to change without notice. www.cree.com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Parameter Symbol Rating Units Drain-source Voltage VDSS 84 VDC Gate-source Voltage VGS -10, +2 VDC Storage Temperature TSTG -65, +150 ˚C TJ 225 ˚C RθJC 1.8 ˚C/W TS 320 ˚C Operating Junction Temperature Thermal Resistance, Junction to Case (packaged)1 Mounting Temperature (30 seconds) Note1 Eutectic die attach using 80/20 AuSn solder mounted to a 40 mil thick CuW carrier. Electrical Characteristics (Frequency = 2.7 GHz to 3.5 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(TH) -3.8 -3.0 -2.3 V Gate Quiescent Voltage VGS(Q) – -2.7 – VDC Saturated Drain Current1 IDS 19.6 27.4 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBD 84 100 – V VGS = -8 V, ID = 28 mA Small Signal Gain1 S21 25 30 – dB VDD = 28 V, IDQ = 800 mA, Frequency = 2.9 GHz Small Signal Gain2 S21 24 28 – dB VDD = 28 V, IDQ = 800 mA, Frequency = 3.5 GHz Power Output1 POUT 66 85 – W Power Output2 POUT 72 94 – W Power Added Efficiency1 PAE 51 59 – % VDD = 28 V, IDQ = 800 mA, Frequency = 2.9 GHz Power Added Efficiency2 PAE 54 61 – % VDD = 28 V, IDQ = 800 mA, Frequency = 3.5 GHz GP – 24 – dB VDD = 28 V, IDQ = 800 mA Input Return Loss S11 – 15 – dB VDD = 28 V, IDQ = 800 mA Output Return Loss S22 – 8 – dB VDD = 28 V, IDQ = 800 mA VSWR – – 5:1 Y No damage at all phase angles, VDD = 28 V, IDQ = 800 mA, POUT = 75W CW DC Characteristics VDS = 10 V, ID = 28 mA VDD = 28 V, IDQ = 800 mA, Frequency = 2.9 GHz RF Characteristics2 Power Gain Output Mismatch Stress VDD = 28 V, IDQ = 800 mA, PIN ≤ 28 dBm, Frequency = 2.9 GHz VDD = 28 V, IDQ = 800 mA, PIN ≤ 28 dBm, Frequency = 3.5 GHz Notes: 1 Scaled from PCM data. 2 All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 1%. Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CMPA2735075D Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Die Dimensions (units in microns) Overall die size 5000 x 4420 (+0/-50) microns, die thickness 100 (+/-10) microns. All Gate and Drain pads must be wire bonded for electrical connection. Pad Number Function 1 RF-IN RF-Input pad. Matched to 50 ohm. Description Pad Size (microns) 150 x 200 Note 3 2 VG1_A Gate control for stage 1. VG ~ 2.0 - 3.5 V. 200 x 200 1,2 3 VG1_B Gate control for stage 1. VG ~ 2.0 - 3.5 V. 200 x 200 1,2 4 VD1_A Drain supply for stage 1. VD = 28 V. 250 x 200 1 5 VD1_B Drain supply for stage 1. VD = 28 V. 250 x 200 1 6 VG2_A Gate control for stage 2A. VG ~ 2.0 - 3.5 V. 200 x 200 1 7 VG2_B Gate control for stage 2B. VG ~ 2.0 - 3.5 V. 200 x 200 1 8 VD2_A Drain supply for stage 2A. VD = 28 V. 500 x 200 1 9 VD2_B Drain supply for stage 2B. VD = 28 V. 500 x 200 1 10 RF-Out RF-Output pad. Matched to 50 ohm. 150 x 200 3 Notes: 1 Attach bypass capacitor to pads 2-9 per application circuit. 2 VG1_A and VG1_B are connected internally so it would be enough to connect either one for proper operation. 3 The RF Input and Output pad have a ground-signal-ground with a nominal pitch of 10 mil (250 um). The RF ground pads are 100 x 100. Die Assembly Notes: • Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at http://www.cree.com/products/wireless_appnotes.asp • • • • • • Vacuum collet is the preferred method of pick-up. The backside of the die is the Source (ground) contact. Die back side gold plating is 5 microns thick minimum. Thermosonic ball or wedge bonding are the preferred connection methods. Gold wire must be used for connections. Use the die label (XX-YY) for correct orientation. Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA2735075D Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Block Diagram Showing Additional Capacitors & Output Matching Section for Operation Over 2.7 to 3.5 GHz C2 C4 C10 Vd C9 C1 C3 Vg VG1_B RF_In VD1_B VD2_B 1 2 2 1 VG1_A C11 VD1_A C5 VG2_A RF_Out VD2_A C7 C6 Designator VG2_B C8 C12 Description Quantity C1,C2,C3,C4,C5,C6,C7,C8 CAP, 120pF, +/-10%, SINGLE LAYER, 0.035”, Er 3300, 100V, Ni/Au TERMINATION 8 C9,C10,C11,C12 CAP, 680pF, +/-10%, SINGLE LAYER, 0.070”, Er 3300, 100V, Ni/Au TERMINATION 4 Notes: 1 The input, output and decoupling capacitors should be attached as close as possible to the die- typical distance is 5 to 10 mils with a maximum of 15 mils. 2 The MMIC die and capacitors should be connected with 2 mil gold bond wires. Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA2735075D Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Typical Performance of the CMPA2735075D Gain and Input Return Loss Output Power and Power Added Efficiency vs Frequency vs Frequency VDDCMPA2735075D = 28 V,Small IDQSignal = Response, 0.7 ACMPA2735075DVOutput = 28 V, IDQ = Efficiency 0.7 Avs. Frequency Added DD Power and Power VDD=28V, IDQ=0.70A 40 VDD=28V, IDQ=0.70A 70 40 70 0 0 S22 (dB) -20 -20 S11 (dB) S21 PAE (%) 60 60 Output Power (dBm) 50 50 40 40 Pout S11 PAE S22 -40 30 -40 2.0 2.5 3.0 3.5 4.0 4.5 30 2.5 5.0 2.7 2.9 3.1 Associated Gain at Maximum Power Added Efficiency vs Frequency V = 28 V, I 3.7 Gain and Power Added Efficiency vs Output Power = 0.7 A and 0.7 Power Added Efficiency vs. Output Power VDD =CMPA2735075D 28 V, IGain = A, Frequency = 3.1 GHz DQ CMPA2735075D Associated Gain @ max PAE vs. Frequency DD VDD=28V, IDQ=0.70A DQ 30 3.5 Frequency (GHz) Frequency (GHz) 3.3 VDD=28V, IDQ=0.70A, Freq=3.1GHz 40 80 35 25 70 Gain (dB) 60 15 10 50 PAE (%) 20 40 15 30 10 PAE (%) 25 Gain (dB) Associated Gain (dB) 30 20 20 5 Gain 5 0 2.5 2.7 2.9 3.1 3.3 Frequency (GHz) 3.5 3.7 10 PAE 0 0 25 30 35 40 CMPA2735075D Rev 1.1 50 55 Output Power (dBm) Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 45 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless PAE (%) 20 S11 (dB), S22 (dB) S21 (dB) 20 Output Power @ Maximum PAE (dBm) S21 (dB) Part Number System CMPA2735075D Package Power Output (W) Upper Frequency (GHz) Lower Frequency (GHz) Cree MMIC Power Amplifier Product Line Parameter Value Units Lower Frequency 2.7 GHz Upper Frequency 3.5 GHz Power Output 75 W Bare Die - Package Table 1. Note: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CMPA2735075D Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/wireless Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CMPA2735075D Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless