Cree, CMPA5585025F 25W, 5.5-8.5GHz, GaN HEMT

CMPA5585025F
25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA5585025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide,
including higher breakdown voltage, higher saturated electron drift velocity
and higher thermal conductivity. GaN HEMTs also offer greater power
density and wider bandwidths compared to Si and GaAs transistors. This
MMIC is available in a 10 lead metal/ceramic flanged package for optimal
PN: CMPA5585
025F
Package Type
: 440208
electrical and thermal performance.
Typical Performance Over 5.8-8.4 GHz (TC = 25˚C)
Parameter
5.8 GHz
6.4 GHz
7.2 GHz
7.9 GHz
8.4 GHz
Units
29.5
24.0
24.0
24.0
22.0
dB
15
23
20
19
19
W
21.7
19.5
17.2
18.5
18.6
dB
30
25
20.5
19
19.5
%
Small Signal Gain
Output Power
1
Power Gain1
Power Added Efficiency
1
Note1: Measured at -30 dBc, 1.6 MHz from carrier, in the CMPA5585025F-AMP under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2.
Features
Applications
• 25 dB Small Signal Gain
• Point to Point Radio
• 35 W Typical PSAT
• Communications
• Operation up to 28 V
• Satellite Communication Uplink
15
Rev 4.1 – July 20
• High Breakdown Voltage
• High Temperature Operation
• Size 1.00 x 0.385 inches
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Symbol
Rating
Units
Conditions
Drain-source Voltage
Parameter
VDSS
84
VDC
25˚C
Gate-source Voltage
VGS
-10, +2
VDC
25˚C
Power Dissipation
PDISS
55
W
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
10
mA
Soldering Temperature1
TS
245
˚C
25˚C
Screw Torque
τ
40
in-oz
Thermal Resistance, Junction to Case
RθJC
1.55
˚C/W
OQPSK, 85˚C, PDISS = 55 W
Thermal Resistance, Junction to Case
RθJC
1.80
˚C/W
CW, 85˚C, PDISS = 77 W
Case Operating Temperature
TC
-40, +140
˚C
PDISS = 55 W
Case Operating Temperature
TC
-40, +85
˚C
PDISS = 77 W
Note:
1
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
Electrical Characteristics (Frequency = 5.5 GHz to 8.5 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Gate Threshold Voltage
VGS(TH)
-3.8
-3.0
-2.3
V
VDS = 10 V, ID = 13.2 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 28 V, ID = 285 mA
Saturated Drain Current2
IDS
10.6
12.8
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBD
84
100
–
V
VGS = -8 V, ID = 13.2 mA
Small Signal Gain
S21
18.25
24
–
dB
Input Return Loss
S11
–
10
–
dB
VDD = 28 V, IDQ = 285 mA
Output Return Loss
S22
–
6
–
dB
VDD = 28 V, IDQ = 285 mA
VSWR
–
–
5:1
Y
DC Characteristics
RF Characteristics
Conditions
1
3
VDD = 28 V, IDQ = 285 mA,
PIN = -20 dBm
No damage at all phase angles, VDD =
Output Mismatch Stress
28 V, IDQ = 285 mA,
POUT = 25W OQPSK
Notes:
1
Measured on-wafer prior to packaging.
2
Scaled from PCM data.
3
Measured in the CMPA5585025F-AMP
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
2
CMPA5585025F Rev 4.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Electrical Characteristics Continued... (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Power Added Efficiency
PAE1
24.5
30.0
–
%
Power Added Efficiency
PAE2
16.5
20.5
–
%
Power Added Efficiency
PAE3
15.5
19.0
–
%
Power Added Efficiency
PAE4
15.0
19.5
–
%
Power Gain
GP1
19.5
21.7
–
dB
Power Gain
GP2
16.25
17.2
–
dB
Power Gain
GP3
16.55
18.5
–
dB
Power Gain
GP4
16.75
18.6
–
dB
OQPSK Linearity
ACLR1
–
-36
–27.0
dB
OQPSK Linearity
ACLR2
–
-36
–28.5
dB
OQPSK Linearity
ACLR3
–
-36
–26.0
dB
OQPSK Linearity
ACLR4
–
-42
–32.5
dB
Conditions
RF Characteristics1,2,3,4
VDD = 28 V, IDQ = 285 mA,
Frequency = 5.8 GHz
VDD = 28 V, IDQ = 285 mA,
Frequency = 7.2 GHz
VDD = 28 V, IDQ = 285 mA,
Frequency = 7.9 GHz
VDD = 28 V, IDQ = 285 mA,
Frequency = 8.4 GHz
VDD = 28 V, IDQ = 285 mA,
Frequency = 5.8 GHz
VDD = 28 V, IDQ = 285 mA,
Frequency = 7.2 GHz
VDD = 28 V, IDQ = 285 mA,
Frequency = 7.9 GHz
VDD = 28 V, IDQ = 285 mA,
Frequency = 8.4 GHz
VDD = 28 V, IDQ = 285 mA,
Frequency = 5.8 GHz
VDD = 28 V, IDQ = 285 mA,
Frequency = 7.2 GHz
VDD = 28 V, IDQ = 285 mA,
Frequency = 7.9 GHz
VDD = 28 V, IDQ = 285 mA,
Frequency = 8.4 GHz
Notes:
1
Measured in the CMPA5585025F-AMP
2
Under OQPSK modulated signal, 1.6 Msps, PN23, Alpha Filter = 0.2.
3
Measured at PAVE = 40 dBm.
4
Fixture loss de-embedded.
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
II (200 < 500 V)
JEDEC JESD22 C101-C
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
3
CMPA5585025F Rev 4.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance of the CMPA5585025F
Figure 1. CMPA5585025F
OutputGain
Power,
and
-30
dBc,
1.6carrier
MHz from carrier
CMPA5585025F Linear
Output Power,
andGain
PAE at
-30PAE
dBc at
- 1.6
MHz
from
VDD
= 28
V,V,IDQIdq
= =285
MspsOQPSK
OQPSKmodulation
Modulation
Vdd
= 28
285mA,
mA, 1.6
1.6 Msps
40
Output Power (W), Gain (dB), & PAE (%)
35
30
25
20
15
10
C Band
Extended C Band
X Band
Output Power
5
Gain
PAE
0
5.7
5.9
6.1
6.3
6.5
6.7
6.9
7.1
7.3
Frequency (GHz)
7.5
7.7
7.9
8.1
8.3
8.5
Figure 2. Typical Small Signal Gain and Return Loss vs Frequency
Typicalmeasured
Small Signal Gain
Return Loss vs Frequency
of the CMPA5585025F
in and
CMPA5585025F-AMP
Amplifier Circuit.
of the CMPA5585025F measured in CMPA5585025F-TB Amplifier Circuit.
VDSVDS
= 28
=
285
mA
= 28V,
V, IIDS
=
285
mA
DS
Small Signal Gain, Input and Output Return Loss (dB)
40
30
20
10
|S21| (dB)
|S11| (dB)
0
|S22| (dB)
-10
-20
-30
-40
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
Frequency (GHz)
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
4
CMPA5585025F Rev 4.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance of the CMPA5585025F
CMPA5585025F C-band
Spectral
Mask
at 15 at
W 15 W
Figure 3. CMPA5585025F
C-band
Spectral
Mask
PAE = 29.1 % @ 5.8 GHz, 28.5 % @ 6.4 GHz & 25.6 % @ 7.2 GHz
PAE = 29.1% at 5.8 GHz, 28.5% at 6.4 GHz & 25.6% at 7.2 GHz
50
40
5.8 GHz
30
6.4 GHz
7.2 GHz
Magnitude (dB)
20
10
0
-10
-20
-30
-40
-6
-4
-2
0
Frequency (MHz)
2
4
6
CMPA5585025F X-band
Spectral
Mask
at 15atW15 W
Figure 4. CMPA5585025F
X-band
Spectral
Mask
PAE = 25.6 % @ 7.9 GHz & 25.3 % @ 8.4 GHz
PAE = 25.6% at 7.9 GHz & 25.3% at 8.4 GHz
50
40
7.9 GHz
30
8.4 GHz
Magnitude (dB)
20
10
0
-10
-20
-30
-40
-6
-4
-2
0
Frequency (MHz)
2
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
5
CMPA5585025F Rev 4.1
4
6
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance of the CMPA5585025F
Figure 5.CMPA5585025F
CMPA5585025F
C-band Linearity, Gain, and PAE vs Average Output Power
C-band Linearity, Gain, and PAE vs Average Output Power
VDS
=
28
OQPSK,1.6
1.6
Msps
Vdd = 28V,V,IDS
Idq==285
285 mA,
mA, OQPSK,
Msps
5.8 GHz Offset 6.4 GHz Offset 7.2 GHz Offset 5.8 GHz Gain
6.4 GHz Gain
7.2 GHz Gain
-15
-20
40
5.8 GHz Offset +
6.4 GHz Offset +
7.2 GHz Offset +
5.8 GHz PAE
6.4 GHz PAE
7.2 GHz PAE
35
30
-25
25
-30
20
-35
15
-40
10
-45
5
-50
Gain (dB) & Power Added Efficiency (%)
1.6 MHz offset from center frequency (dBc)
-10
0
29
31
33
35
37
39
41
43
45
Average Output Power (dBm)
Figure 6.CMPA5585025F
CMPA5585025F
X-band
Linearity,
Gain,
and
vs Average
Output Power
X-band
Linearity,
Gain, and
PAE
vs PAE
Average
Output Power
=28
28V,V,IIdq==285
285 mA,
mA, OQPSK,
1.6
Msps
VVdd
=
OQPSK,
1.6
Msps
DS
DS
40
-15
7.9 GHz Offset -
7.9 GHz Offset +
8.4 GHz Offset -
8.4 GHz Offset +
7.9 GHz Gain
7.9 GHz PAE
8.4 GHz Gain
8.4 GHz PAE
35
-20
30
-25
25
-30
20
-35
15
-40
10
-45
5
Gain (dB) & Power Added Efficiency (%)
1.6 MHz offset from center frequency (dBc)
-10
0
-50
20
25
30
35
40
45
Average Output Power (dBm)
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
6
CMPA5585025F Rev 4.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance of the CMPA5585025F
Figure 7. CMPA5585025F EVM vs Average Output Power
CMPA5585025F EVM vs Output Power
Vdd== 285
28 V, IdqmA,
= 285 mA,
Msps OQPSK
Modulation
VDS = 28 V, IDS
1.61.6Msps
OQPSK
Modulation
10
9
5.8 GHz
8
7.2 GHz
6.4 GHz
7.9 GHz
7
8.4 GHz
EVM (%)
6
5
4
3
2
1
0
21
23
25
27
29
31
33
35
37
39
41
43
45
Average Output Power (dBm)
Figure 8. CMPA5585025F
- Linearity vs Average Output Power
CMPA5585025F - Linearity vs Output Power
1.6 Msps, Idq
mA
OQPSK,OQPSK,
1.6 Msps,
IDS= 285
= 285
mA
1.6 MHz offset from center frequencyy (dBc)
-10
5.8 GHz
-15
6.4 GHz
7.2 GHz
-20
7.9 GHz
8.4 GHz
-25
-30
-35
-40
-45
-50
20
22
24
26
28
30
32
34
36
38
40
42
44
46
Average Output Power (dBm)
Figure 9. CMPA5585025F
Linearity vs Average Output Power
CMPA5585025F Linearity vs Average Output Power
Idq = 285
mA, IM3
5 MHz
VDS = 28 V,VddIDS= 28=V,285
mA,
IM3
5 spacing
MHz spacing
-10
5.8 GHz
6.4 GHz
-15
7.2 GHz
7.9 GHz
Linearity (dBc)
-20
8.4 GHz
-25
-30
-35
-40
-45
-50
20
22
24
26
28
30
32
34
36
38
40
42
44
46
Average Output Power (dBm)
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
7
CMPA5585025F Rev 4.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance of the CMPA5585025F
Figure 10. CMPA5585025F - C-band Output Power, Gain and PAE vs Input Power
CMPA5585025F C-band Output Power, Gain and PAE vs Input Power
VDS =Vdd
28= 28
V,V,IIdq
= 1.2 A, CW
DS = 1.2 A, CW
40
35
Gain (dB) & PAE (%)
30
25
20
15
10
5
5.8 GHz Gain
5.8 GHz PAE
6.4 GHz Gain
6.4 GHz PAE
7.2 GHz Gain
7.2 GHz PAE
0
0
5
10
15
20
25
30
Input Power (dBm)
Figure 11. CMPA5585025F - X-band Output Power, Gain and PAE vs Input Power
CMPA5585025F X-band Output Power, Gain and PAE vs Input Power
VDS =Vdd
28= 28V,V,IIdq
= 1.2 A, CW
DS = 1.2 A, CW
40
35
7.9 GHz Gain
7.9 GHz PAE
8.4 GHz Gain
8.4 GHz PAE
Gain (dB) & PAE (%)
30
25
20
15
10
5
0
0
5
10
15
20
25
30
Input Power (dBm)
Figure 12. CMPA5585025F - Power, Gain and PAE vs Frequency
CMPA5585025F Psat vs Frequency
VDS = 28
1.2
A, CW
Vdd =V,
28 I
V,DS
Idq== 1.2
A, CW
45
40
Saturated Output Power (W)
35
30
25
20
15
Psat
10
Gain
5
PAE
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
Frequency (GHz)
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
8
CMPA5585025F Rev 4.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance of the CMPA5585025F
CMPA5585025F Typical
Drain Drain
Current
vs Average
Output Power
Figure 13. CMPA5585025F
- Typical
Current
vs Average
Output Power
28 V, Idq = 285 mA, OQPSK, 1.6 Msps
VDS Vdd
= 28= V,
IDS = 285 mA, OQPSK, 1.6 Msps
3.5
5.8 GHz
3.0
6.4 GHz
7.2 GHz
7.9 GHz
Drain Current (A)
2.5
8.4 GHz
2.0
1.5
1.0
0.5
0.0
20
25
30
35
40
Average Output Power (dBm)
45
Figure 14. CMPA5585025F - Intermodulation Distortion Products vs Tone Spacing
CMPA5585025F Intermodulation Distortion Products vs Tone Spacing
VDS =Vd
28= V,
= 285 mA, Center Freq = 7.9 GHz
28 IV,
DS Idq = 285 mA, Center Freq = 7.9 GHz
-10
Intermodulation Distortion (dBc)
-15
-20
IM3-
IM5-
IM7-
IM3+
IM5+
IM7+
-25
-30
-35
-40
-45
-50
0.1
1
10
Two-Tone Spacing (MHz)
100
Note: Divergence in IM5 and IM7 at tone spacings greater than 20 MHz is due to the
bias components on the test fixture.
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
9
CMPA5585025F Rev 4.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance of the CMPA5585025F
AM-AM- AM-AM
Figure 15.CMPA5585025F
CMPA5585025F
Vdd
= 28V,
V,IIdq== 285
285 mA
VDS
= 28
mA
DS
26
5.8 GHz
24
7.2 GHz
7.9 GHz
S21 Magnitude (dB)
22
8.4 GHz
20
18
16
14
12
10
10
12
14
16
18
20
22
24
Input Power (dBm)
26
28
30
32
34
30
32
34
Figure 16. CMPA5585025F -Normalized AM-PM
CMPA5585025F Normalized AM-PM
VDS
= 28
= 285 mA
DS = 285 mA
Vdd
= 28V,V,IIdq
25
5.8 GHz
20
7.2 GHz
S21 Phase (degrees)
7.9 GHz
8.4 GHz
15
10
5
0
-5
-10
10
12
14
16
18
20
22
24
Input Power (dBm)
26
28
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
10
CMPA5585025F Rev 4.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance of the CMPA5585025F
Figure 17. CMPA5585025F EVM vs Average Output Power
VDS = 28 V, IDS = 285 mA, 256 QAM
5.0
4.5
4.0
3.5
EVM (%)
3.0
2.5
2.0
1.5
6.4 EVM (%)
1.0
7.9 EVM (%)
8.4 EVM (%)
0.5
7.2 EVM (%)
0.0
20
25
30
35
Output Power (dBm)
40
45
Figure 18. CMPA5585025F Linearity vs Average Output Power
VDS = 28 V, IDS = 285 mA, IM3, IM5, IM7, 5 MHz spacing
0
-10
Linearity (dBc)
-20
-30
IM3 7900
IM5 7900
IM7 7900
-40
-50
-60
20
25
30
35
40
45
Output Power (dBm)
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
11
CMPA5585025F Rev 4.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CMPA5585025F Power Dissipation De-rating Curve
CMPA5585025F Power Dissipation De-Rating Curve
90
80
Power Dissipation (W)
70
60
50
40
30
Note 1
20
10
0
0
25
50
75
100
125
150
Maximum Case Temperature ( C)
175
200
225
250
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
12
CMPA5585025F Rev 4.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CMPA5585025F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
C1, C3, C7, C8, C10, C13
CAP, 1.0 uF, +/-10%, 1210, 100V, X7R
6
C2, C4, C5, C6, C9, C12
CAP, 33000 pF, 0805, 100V, X7R
6
C11, C14
CAP ELECT 3.3UF 80V FK SMD
2
R1, R2
RES 0.0 OHM 1/16W 0402 SMD
2
J1,J2
CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE,
BLUNT POST, 20MIL
2
CONNECTOR, HEADER, RT>PLZ .1CEN LK 9POS
1
PCB, TACONIC, RF-35P-0200-CL1/CL1
1
CMPA5585025F
1
J3
Q1
CMPA5585025F-AMP Demonstration Amplifier Circuit
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
13
CMPA5585025F Rev 4.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CMPA5585025F-AMP Demonstration Amplifier Circuit
CMPA5585025F-AMP Demonstration Amplifier Circuit Outline
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
14
CMPA5585025F Rev 4.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CMPA5585025F-AMP Demonstration Amplifier Circuit
To configure the CMPA5585025F test fixture to enable independent VG1 / VG2 control of the device, a cut
must be made to the microstrip line just above the R1 resistor as shown. Pin 9 will then supply VG1 and Pin 8 will
supply VG2.
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
15
CMPA5585025F Rev 4.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CMPA5585025F (Package Type —
­ 440208)
Pin Number
Qty
1
Gate Bias for Stage 2
2
Gate Bias for Stage 2
3
RF In
4
Gate Bias for Stage 1
5
Gate Bias for Stage 1
6
Drain Bias
7
Drain Bias
8
RF Out
9
Drain Bias
10
Drain Bias
11
Source
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
16
CMPA5585025F Rev 4.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Part Number System
CMPA5585025F
Package
Power Output (W)
Upper Frequency (GHz)
Lower Frequency (GHz)
Cree MMIC Power Amplifier Product Line
Parameter
Value
Units
Lower Frequency
5.5
GHz
Upper Frequency1
8.5
GHz
Power Output
25
W
Flange
-
Package
Table 1.
Note : Alpha characters used in frequency code
1
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
17
CMPA5585025F Rev 4.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CMPA5585025F
GaN MMIC
Each
Test board without GaN MMIC
Each
Test board with GaN MMIC installed
Each
CMPA5585025F-TB
CMPA5585025F-AMP
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
18
CMPA5585025F Rev 4.1
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes
no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the
average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in
different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical
experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal
injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE
logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
19
CMPA5585025F Rev 4.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf