Cree, CMPA2060025D 25W, 2.0-6.0GHz, GaN HEMT

CMPA2060025D
25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier
Cree’s CMP2060025D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated
electron drift velocity and higher thermal conductivity. GaN HEMTs
also offer greater power density and wider bandwidths compared to
Si and GaAs transistors. This MMIC contains a two-stage reactively
matched amplifier design approach enabling very wide bandwidths to
PN: CMPA20
6002
be achieved.
5D
Typical Performance Over 2.0-6.0 GHz
Parameter
(TC = 25˚C)
2.0 GHz
3.0 GHz
4.0 GHz
5.0 GHz
6.0 GHz
Units
Small Signal Gain
31
33
27
23
27
dB
Saturated Output Power, PSAT1
29
26
38
27
45
W
Power Gain @ POUT = 44 dBm
23
23
18
16
18
dB
PAE @ POUT 44 dBm
42
40
50
28
38
%
Note : PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-8 mA. Typical
Data with 50Ω output load. Output transformer can improve performance.
1
il 2012
Rev 1.0 – Apr
Features
Applications
• 21 dB Small Signal Gain
• Ultra Broadband Drivers
• 23 W Typical PSAT
• Fiber Drivers
• Operation up to 28 V
• Test Instrumentation
• High Breakdown Voltage
• EMC Amplifier Drivers
• High Temperature Operation
• Size 0.142 x 0.144 x 0.004 inches
Subject to change without notice.
www.cree.com/wireless
1
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
Rating
Units
Drain-source Voltage
VDSS
84
VDC
Gate-source Voltage
VGS
-10, +2
VDC
Storage Temperature
TSTG
-55, +150
˚C
TJ
225
˚C
RθJC
2.3
˚C/W
TS
320
˚C
Operating Junction Temperature
Thermal Resistance, Junction to Case (packaged)1
Mounting Temperature (30 seconds)
Note1 Eutectic die attach using 80/20 AuSn solder mounted to a 40 mil thick CuW carrier.
Electrical Characteristics (Frequency = 2.0 GHz to 6.0 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
V(GS)TH
-3.8
-3.0
-2.3
V
Gate Quiescent Voltage
V(GS)Q
–
-2.7
–
VDC
Saturated Drain Current1
IDS
9.3
13.1
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBD
84
100
–
V
VGS = -8 V, ID = 13.4 mA
Small Signal Gain
S21
–
25
–
dB
VDD = 28 V, IDQ = 1200 mA
Input Return Loss
S11
–
7
–
dB
VDD = 28 V, IDQ = 1200 mA
Output Return Loss
S22
–
7
–
dB
VDD = 28 V, IDQ = 1200 mA
Power Output, 1
POUT1
18
28
–
W
Power Output, 2
POUT2
14
24
–
W
Power Output, 3
POUT3
17
27
–
W
Power Added Efficiency, 1
PAE1
19
41
–
%
DC Characteristics
RF Characteristics
VDS = 10 V, ID = 13.4 mA
VDD = 28 V, IDQ = 1200 mA
2,3
Power Added Efficiency, 2
Power Added Efficiency, 3
Power Gain
Output Mismatch Stress
PAE2
34
45
–
%
VDD = 28 V, IDQ = 1200 mA,
PIN = 23 dBm, Freq = 2.5 GHz
VDD = 28 V, IDQ = 1200 mA,
PIN = 21 dBm, Freq = 3.5 GHz
VDD = 28 V, IDQ = 1200 mA,
PIN = 28 dBm, Freq = 5.5 GHz
VDD = 28 V, IDQ = 1200 mA,
PIN = 23 dBm, Freq = 2.5 GHz
VDD = 28 V, IDQ = 1200 mA,
PIN = 21 dBm, Freq = 3.5 GHz
VDD = 28 V, IDQ = 1200 mA,
PAE3
15
30
–
%
GP
–
19
–
dB
VDD = 28 V, IDQ = 1200 mA
VSWR
–
–
5:1
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 1200 mA,
POUT = 25W CW
PIN = 28 dBm, Freq = 5.5 GHz
Notes:
1
Scaled from PCM data.
2
All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 0.1%.
3
Data measured into an output load with a 15 dB maximum return loss.
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
2
CMPA2060025D Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Die Dimensions (units in microns)
Overall die size 3610 x 3670 (+0/-50) microns, die thickness 100 (+/-10) microns.
All Gate and Drain pads must be wire bonded for electrical connection.
Pad Number
Function
Description
Pad Size
(microns)
Note
1
RF-IN
RF-Input pad. Matched to 50 ohm.
203 x 203
3
2
VG1_A
Gate control for stage 1. VG ~ 2.0 - 3.5 V.
152 x 127
1,2
3
VG1_B
Gate control for stage 1. VG ~ 2.0 - 3.5 V.
152 x 127
1,2
4
VD1_A
Drain supply for stage 1. VD = 28 V.
228 x 152
1
5
VD1_B
Drain supply for stage 1. VD = 28 V.
228 x 152
1
6
VG2_A
Gate control for stage 2A. VG ~ 2.0 - 3.5 V.
178 x 178
1
7
VG2_B
Gate control for stage 2B. VG ~ 2.0 - 3.5 V.
178 x 178
1
8
VD2_A
Drain supply for stage 2A. VD = 28 V.
–
1
9
VD2_B
Drain supply for stage 2B. VD = 28 V.
–
1
10
RF-Out
RF-Output pad. Requires external matching circuit for optimal performance freq. > 4.0 GHz
203 x 203
3
Notes:
1
Attach bypass capacitor to pads 2-9 per application circuit.
2
The RF Input and Output pad have a ground-signal-ground with a nominal pitch of 9 mil (240 um). The RF
ground pads are 127 x 127 microns.
Die Assembly Notes:
•
Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure
application note at http://www.cree.com/products/wireless_appnotes.asp
•
•
•
•
•
•
Vacuum collet is the preferred method of pick-up.
The backside of the die is the Source (ground) contact.
Die back side gold plating is 5 microns thick minimum.
Thermosonic ball or wedge bonding are the preferred connection methods.
Gold wire must be used for connections.
Use the die label (XX-YY) for correct orientation.
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
3
CMPA2060025D Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Block Diagram Showing Additional Capacitors & Output
Matching Section for Operation Over 2.0 to 6.0 GHz
C2
C4
C10
Vd
C9
C1
C3
Vg
VG1_B
RF_In
1
VD1_B
VD2_B
2
2
VG1_A
C11
VD1_A
C5
VG2_A
1
RF_Out
VD2_A
C7
C6
Designator
VG2_B
C8
C12
Description
Quantity
C1,C2,C3,C4,C5,C6,C7,C8
CAP, 120pF, +/-10%, SINGLE LAYER, 0.035”, Er 3300, 100V,
Ni/Au TERMINATION
8
C9,C10,C11,C12
CAP, 680pF, +/-10%, SINGLE LAYER, 0.070”, Er 3300, 100V,
Ni/Au TERMINATION
4
Notes:
1
The input, output and decoupling capacitors should be attached as close as possible to the
die- typical distance is 5 to 10 mils with a maximum of 15 mils.
2
The MMIC die and capacitors should be connected with 2 mil gold bond wires.
3
The output of the MMIC requires a transformer, (30Ω, 90° at 5.5GHz) for improved perfor-
mance.
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4
CMPA2060025D Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Typical Performance of the CMPA2060025D
Small Signal Gain vs Frequency
VDD=28V, IDQ=1.2A, Unmatched Load
Input & Output Return Losses vs Frequency
VDD=28V, IDQ=1.2A, Unmatched Load
20
20
Return Losses (dB)
40
Gain (dB)
40
0
-20
S11
S22
0
S22 (dB)
S11 (dB)
-20
-40
-40
1.0
2.0
3.0
4.0
5.0
6.0
1.0
7.0
2.0
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
Frequency (GHz)
Output Power & Power Added Efficiency vs Frequency
VDD=28V, IDQ=1.2A, Unmatched Load
55
55
50
50
Pout (dBm)
45
45
40
PAE (%)
35
35
30
30
25
25
20
Pout
20
15
PAE
15
10
10
5
5
0
PAE (%)
Output Power (dBm)
40
0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
II (200 < 500 V)
JEDEC JESD22 C101-C
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
5
CMPA2060025D Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Part Number System
CMPA2060025D
Package
Power Output (W)
Upper Frequency (GHz)
Lower Frequency (GHz)
Cree MMIC Power Amplifier Product Line
Parameter
Value
Units
Lower Frequency
2.0
GHz
Upper Frequency1
6.0
GHz
Power Output
25
W
Bare Die
-
Package
Table 1.
Note : Alpha characters used in frequency
1
code indicate a value greater than 9.9 GHz.
See Table 2 for value.
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
6
CMPA2060025D Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use. No license is granted by implication or otherwise under
any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities
and are provided for information purposes only. These values can and do vary in different applications, and actual
performance can vary over time. All operating parameters should be validated by customer’s technical experts for each
application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could
result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a
nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/wireless
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
7
CMPA2060025D Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless