CGH60120D 120 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties PN: CGH6012 0D compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors. FEATURES APPLICATIONS • 13 dB Typical Small Signal Gain at 4 GHz • 2-Way Private Radio • 12 dB Typical Small Signal Gain at 6 GHz • Broadband Amplifiers • 120 W Typical PSAT • Cellular Infrastructure • 28 V Operation • Test Instrumentation • High Breakdown Voltage • Class A, AB, Linear amplifiers suitable • High Temperature Operation for OFDM, W-CDMA, EDGE, CDMA • Up to 6 GHz Operation waveforms • High Efficiency Packaging Information • • Bare die are shipped in Gel-Pak® containers. Non-adhesive tacky membrane immobilizes die during il 2012 Rev 3.1 – Apr shipment. Subject to change without notice. www.cree.com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Symbol Rating Units Conditions Drain-source Voltage Parameter VDSS 84 VDC 25˚C Gate-source Voltage VGS -10, +2 VDC 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 30 mA 25˚C Maximum Drain Current1 IDMAX 12 A 25˚C Thermal Resistance, Junction to Case (packaged)2 RθJC 1.5 ˚C/W Thermal Resistance, Junction to Case (die only) RθJC 0.8 ˚C/W 85˚C TS 320 ˚C 30 seconds Mounting Temperature (30 seconds) Note1 Current limit for long term, reliable operation Note2 Eutectic die attach using 80/20 AuSn mounted to a 60 mil thick CuMoCu carrier. Electrical Characteristics (Frequency = 4 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(TH) -3.8 -3.0 –2.3 V VDS = 10 V, ID = 28.8 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDD = 28 V, IDQ = 800 mA Drain Current IDSS 23.2 28.0 – A VDS = 6 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBD 120 – – V VGS = -8 V, ID = 28.8 mA On Resistance RON – 0.1 – Ω VDS = 0.1 V VG-ON – 1.9 – V IGS = 28.8 mA Small Signal Gain GSS – 13 – dB VDD = 28 V, IDQ = 800 mA Saturated Power Output2 PSAT – 120 – W VDD = 28 V, IDQ = 800 mA η – 65 – % VDD = 28 V, IDQ = 800 mA, PSAT = 120 W IM3 – -30 – dBc VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 800 mA, POUT = 120 W CW Input Capacitance CGS – 34.0 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 7.7 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 1.5 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz DC Characteristics Gate Forward Voltage RF Characteristics Drain Efficiency1 Intermodulation Distortion Output Mismatch Stress VDD = 28 V, IDQ = 800 mA, POUT = 120 W PEP Dynamic Characteristics Notes: 1 Drain Efficiency = POUT / PDC 2 PSAT is defined as IG = 3.0 mA. Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CGH60120D Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless DIE Dimensions (units in microns) Overall die size 5260 x 920 (+0/-50) microns, die thickness 100 (+/- 10) microns. All Gate and Drain pads must be wire bonded for electrical connection. Assembly Notes: • Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at www.cree.com/wireless. • • • • • • Vacuum collet is the preferred method of pick-up. The backside of the die is the Source (ground) contact. Die back side gold plating is 5 microns thick minimum. Thermosonic ball or wedge bonding are the preferred connection methods. Gold wire must be used for connections. Use the die label (XX-YY) for correct orientation, see arrow 9 in the drawing above. Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CGH60120D Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Typical Performance K Factor MAG (dB) Simulated Maximum Available Gain and K Factor of the CGH60120D VDD = 28 V, IDQ = 1000 mA Intrinsic die parameters - reference planes at centers of gate and drain bonding pads. No wire bonds assumed. Typical Noise Performance Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CGH60120D Rev 3.1 Noise Resistance (Ohms) Minimum Noise Figure (dB) Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH60120D VDD = 28 V, IDQ = 1000 mA Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Typical Die S-Parameters (Small Signal, VDS = 28 V, IDQ = 500 mA, magnitude / angle) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.961 -174.70 4.32 82.44 0.008 -5.29 0.780 -176.07 600 MHz 0.962 -175.52 3.58 80.05 0.008 -7.21 0.783 -175.85 700 MHz 0.962 -176.10 3.05 77.81 0.008 -8.99 0.786 -175.58 800 MHz 0.962 -176.53 2.65 75.66 0.008 -10.67 0.790 -175.30 900 MHz 0.963 -176.86 2.34 73.59 0.008 -12.27 0.794 -175.02 1.0 GHz 0.963 -177.12 2.08 71.58 0.008 -13.80 0.798 -174.74 1.1 GHz 0.964 -177.33 1.88 69.64 0.008 -15.27 0.802 -174.48 1.2 GHz 0.964 -177.50 1.70 67.75 0.008 -16.68 0.807 -174.24 1.3 GHz 0.965 -177.65 1.55 65.90 0.008 -18.04 0.812 -174.02 1.4 GHz 0.965 -177.78 1.43 64.11 0.007 -19.34 0.817 -173.82 1.5 GHz 0.966 -177.89 1.31 62.37 0.007 -20.60 0.822 -173.64 1.6 GHz 0.967 -177.99 1.22 60.67 0.007 -21.80 0.827 -173.49 1.7 GHz 0.967 -178.08 1.13 59.02 0.007 -22.95 0.832 -173.35 1.8 GHz 0.968 -178.16 1.05 57.41 0.007 -24.04 0.837 -173.24 1.9 GHz 0.968 -178.24 0.98 55.85 0.007 -25.09 0.842 -173.15 2.0 GHz 0.969 -178.31 0.92 54.33 0.007 -26.08 0.847 -173.07 2.1 GHz 0.970 -178.37 0.86 52.85 0.006 -27.03 0.851 -173.01 2.2 GHz 0.970 -178.43 0.81 51.42 0.006 -27.92 0.856 -172.97 2.3 GHz 0.971 -178.49 0.77 50.02 0.006 -28.76 0.861 -172.95 2.4 GHz 0.971 -178.55 0.72 48.67 0.006 -29.56 0.865 -172.93 2.5 GHz 0.972 -178.60 0.68 47.36 0.006 -30.30 0.870 -172.93 2.6 GHz 0.973 -178.66 0.65 46.08 0.006 -31.00 0.874 -172.94 2.7 GHz 0.973 -178.71 0.61 44.84 0.006 -31.64 0.878 -172.97 2.8 GHz 0.974 -178.76 0.58 43.64 0.005 -32.24 0.882 -173.00 2.9 GHz 0.974 -178.81 0.55 42.47 0.005 -32.78 0.886 -173.03 3.0 GHz 0.975 -178.85 0.53 41.34 0.005 -33.28 0.890 -173.08 3.2 GHz 0.975 -178.95 0.48 39.17 0.005 -34.13 0.897 -173.19 3.4 GHz 0.976 -179.03 0.44 37.12 0.005 -34.78 0.903 -173.32 3.6 GHz 0.977 -179.12 0.40 35.19 0.004 -35.24 0.909 -173.46 3.8 GHz 0.978 -179.20 0.37 33.37 0.004 -35.48 0.915 -173.62 4.0 GHz 0.979 -179.29 0.34 31.64 0.004 -35.52 0.920 -173.78 4.2 GHz 0.979 -179.37 0.31 30.01 0.004 -35.32 0.925 -173.95 4.4 GHz 0.980 -179.44 0.29 28.46 0.003 -34.89 0.929 -174.12 4.6 GHz 0.980 -179.52 0.27 27.00 0.003 -34.19 0.933 -174.29 4.8 GHz 0.981 -179.60 0.25 25.61 0.003 -33.22 0.937 -174.46 5.0 GHz 0.981 -179.67 0.24 24.29 0.003 -31.92 0.941 -174.63 5.2 GHz 0.982 -179.74 0.22 23.03 0.003 -30.27 0.944 -174.80 5.4 GHz 0.982 -179.81 0.21 21.84 0.002 -28.22 0.947 -174.97 5.6 GHz 0.982 -179.88 0.19 20.70 0.002 -25.72 0.950 -175.13 5.8 GHz 0.983 -179.95 0.18 19.61 0.002 -22.72 0.952 -175.29 6.0 GHz 0.983 179.98 0.17 18.58 0.002 -19.15 0.954 -175.45 Contact Cree to receive this s-parameter file in “.s2p” format at [email protected] Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CGH60120D Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Typical Die S-Parameters (Small Signal, VDS = 28 V, IDQ = 1.0 A, magnitude / angle) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.969 -175.20 4.23 83.99 0.006 -3.13 0.817 -177.45 600 MHz 0.969 -175.97 3.51 81.96 0.006 -4.57 0.818 -177.31 700 MHz 0.969 -176.53 3.00 80.05 0.006 -5.88 0.820 -177.14 800 MHz 0.970 -176.94 2.61 78.23 0.006 -7.11 0.822 -176.95 900 MHz 0.970 -177.26 2.31 76.46 0.006 -8.27 0.824 -176.75 1.0 GHz 0.970 -177.51 2.06 74.75 0.006 -9.38 0.827 -176.55 1.1 GHz 0.970 -177.72 1.86 73.08 0.006 -10.44 0.829 -176.35 1.2 GHz 0.971 -177.90 1.70 71.45 0.006 -11.46 0.832 -176.16 1.3 GHz 0.971 -178.04 1.55 69.85 0.006 -12.44 0.835 -175.98 1.4 GHz 0.971 -178.17 1.43 68.28 0.006 -13.37 0.838 -175.81 1.5 GHz 0.971 -178.28 1.32 66.75 0.006 -14.27 0.841 -175.65 1.6 GHz 0.972 -178.38 1.23 65.25 0.005 -15.13 0.844 -175.50 1.7 GHz 0.972 -178.47 1.15 63.78 0.005 -15.95 0.847 -175.36 1.8 GHz 0.972 -178.55 1.07 62.33 0.005 -16.73 0.850 -175.24 1.9 GHz 0.973 -178.62 1.01 60.92 0.005 -17.47 0.854 -175.13 2.0 GHz 0.973 -178.69 0.95 59.54 0.005 -18.17 0.857 -175.03 2.1 GHz 0.974 -178.75 0.89 58.19 0.005 -18.82 0.860 -174.94 2.2 GHz 0.974 -178.81 0.84 56.87 0.005 -19.44 0.864 -174.86 2.3 GHz 0.974 -178.86 0.80 55.57 0.005 -20.01 0.867 -174.80 2.4 GHz 0.975 -178.91 0.75 54.31 0.005 -20.54 0.870 -174.74 2.5 GHz 0.975 -178.96 0.72 53.07 0.005 -21.02 0.873 -174.69 2.6 GHz 0.975 -179.01 0.68 51.86 0.005 -21.46 0.876 -174.66 2.7 GHz 0.976 -179.05 0.65 50.68 0.004 -21.86 0.880 -174.63 2.8 GHz 0.976 -179.10 0.62 49.53 0.004 -22.20 0.883 -174.61 2.9 GHz 0.976 -179.14 0.59 48.40 0.004 -22.50 0.886 -174.59 3.0 GHz 0.977 -179.18 0.56 47.30 0.004 -22.75 0.889 -174.59 3.2 GHz 0.977 -179.26 0.51 45.17 0.004 -23.11 0.894 -174.60 3.4 GHz 0.978 -179.34 0.47 43.14 0.004 -23.25 0.900 -174.63 3.6 GHz 0.978 -179.41 0.43 41.20 0.004 -23.18 0.905 -174.68 3.8 GHz 0.979 -179.49 0.40 39.36 0.003 -22.87 0.910 -174.74 4.0 GHz 0.979 -179.56 0.37 37.60 0.003 -22.32 0.915 -174.82 4.2 GHz 0.980 -179.62 0.35 35.92 0.003 -21.50 0.919 -174.91 4.4 GHz 0.980 -179.69 0.32 34.31 0.003 -20.40 0.923 -175.00 4.6 GHz 0.981 -179.76 0.30 32.78 0.003 -18.98 0.927 -175.11 4.8 GHz 0.981 -179.82 0.28 31.32 0.003 -17.23 0.930 -175.22 5.0 GHz 0.982 -179.89 0.26 29.92 0.002 -15.11 0.934 -175.33 5.2 GHz 0.982 -179.95 0.25 28.58 0.002 -12.59 0.937 -175.45 5.4 GHz 0.982 179.99 0.23 27.30 0.002 -9.66 0.940 -175.57 5.6 GHz 0.983 179.93 0.22 26.08 0.002 -6.29 0.943 -175.69 5.8 GHz 0.983 179.86 0.21 24.90 0.002 -2.48 0.945 -175.81 6.0 GHz 0.983 179.80 0.20 23.78 0.002 1.75 0.948 -175.93 Contact Cree to receive this s-parameter file in “.s2p” format at [email protected] Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CGH60120D Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/wireless Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CGH60120D Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless