Cree, CMPA801B025D 25W, 8.0-11.0GHz GaN HEMT

CMPA801B025D
25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier
Cree’s CMP801B025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based
monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or
gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to
Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach
enabling very wide bandwidths to be achieved.
Typical Performance Over 8.0-11.0 GHz
Parameter
8.0 GHz
9.0 GHz
10.0 GHz
11.0 GHz
Units
Small Signal Gain
30
28
27
29
dB
POUT @ PIN = 25 dBm
32
41
34
47
W
Power Gain @ PIN = 25 dBm
20
21
20
21
dB
PAE @ PIN = 25 dBm
41
44
37
41
%
Features
ne 2014
Rev 1.0 – Ju
(TC = 25˚C)
Applications
• 28 dB Small Signal Gain
• Point to Point Radio
• 35 W Typical PSAT
• Communications
• Operation up to 28 V
• Test Instrumentation
• High Breakdown Voltage
• EMC Amplifiers
• High Temperature Operation
• Size 0.142 x 0.188 x 0.004 inches
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
Rating
Units
Conditions
Drain-source Voltage
VDSS
84
VDC
25˚C
Gate-source Voltage
VGS
-10, +2
VDC
25˚C
Storage Temperature
TSTG
-55, +150
˚C
TJ
225
˚C
Thermal Resistance, Junction to Case (packaged)1
RθJC
1.22
˚C/W
Pulse Width = 100 µs, Duty
Cycle = 10%, PDISS = 77 W
Thermal Resistance, Junction to Case (packaged)1
RθJC
1.80
˚C/W
CW, 85˚C, PDISS = 77 W
TS
320
˚C
Operating Junction Temperature
Mounting Temperature (30 seconds)
PDISS = 77 W
Note Eutectic die attach using 80/20 AuSn solder mounted to a 40 mil thick CPC carrier.
1
Electrical Characteristics (Frequency = 8.0 GHz to 11.0 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(TH)
-3.8
-3.0
-2.3
V
VDS = 10 V, ID = 13.2 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
V
VDD = 28 V, IDQ = 1200 mA
Saturated Drain Current1
IDS
9.2
12.9
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBD
84
100
–
V
VGS = -8 V, ID = 13.2 mA
Small Signal Gain
S21
–
28
–
dB
VDD = 28 V, IDQ = 1200 mA
Power Output
POUT1
22.5
40
–
W
VDD = 28 V, IDQ = 1200 mA, PIN = 25 dBm, Freq = 8 GHz
Power Output
POUT1
28.0
40
–
W
VDD = 28 V, IDQ = 1200 mA, PIN = 25 dBm, Freq = 10 GHz
Power Output
POUT1
27.5
40
–
W
VDD = 28 V, IDQ = 1200 mA, PIN = 25 dBm, Freq = 11 GHz
Power Added Efficiency
PAE
30
45
–
%
VDD = 28 V, IDQ = 1200 mA, PIN = 25 dBm, Freq = 8 GHz
Power Added Efficiency
PAE
32
45
–
%
VDD = 28 V, IDQ = 1200 mA, PIN = 25 dBm, Freq = 10 GHz
Power Added Efficiency
PAE
30
45
–
%
VDD = 28 V, IDQ = 1200 mA, PIN = 25 dBm, Freq = 11 GHz
Power Gain
GP
19.75
20
–
dB
VDD = 28 V, IDQ = 1200 mA, PIN = 25 dBm, Freq = 8 GHz
Power Gain
GP
19.55
20
–
dB
VDD = 28 V, IDQ = 1200 mA, PIN = 25 dBm, Freq = 10 GHz
Power Gain
GP
22.40
20
–
dB
VDD = 28 V, IDQ = 1200 mA, PIN = 25 dBm, Freq = 11 GHz
Input Return Loss
S11
–
5
–
dB
VDD = 28 V, IDQ = 1200 mA
Output Return Loss
S22
–
12
–
dB
VDD = 28 V, IDQ = 1200 mA
VSWR
–
5:1
–
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 1200 mA, POUT = 25W CW
DC Characteristics
RF Characteristics
2
Output Mismatch Stress
Notes:
1
Scaled from PCM data.
2
All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 0.1%.
Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
2
CMPA801B025D Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Die Dimensions (units in microns)
Overall die size 4780 x 3610 (+0/-50) microns, die thickness 100 (+/-10) micron.
All Gate and Drain pads must be wire bonded for electrical connection.
Pad Number
Function
1
RF-IN
RF-Input pad. Matched to 50 ohm.
Description
Pad Size (microns)
150 x 150
Note
4
2
VG1_A
Gate control for stage 1. VG ~ 2.0 - 3.5 V.
100 x 100
1,2
3
VG1_B
Gate control for stage 1. VG ~ 2.0 - 3.5 V.
100 x 100
1,2
4
VD1_A
Drain supply for stage 1. VD = 28 V.
100 x 100
1
5
VD1_B
Drain supply for stage 1. VD = 28 V.
100 x 100
1
6
VG2_A
Gate control for stage 2A. VG ~ 2.0 - 3.5 V.
100 x 100
1,3
7
VG2_B
Gate control for stage 2A. VG ~ 2.0 - 3.5 V.
100 x 100
1,3
8
VD2_A
Drain supply for stage 2A. VD = 28 V.
–
1
9
VD2_B
Drain supply for stage 2B. VD = 28 V.
–
1
10
RF-Out
RF-Output pad. Matched to 50 ohm.
150 x 150
4
Notes:
1
Attach bypass capacitor to pads 2-9 per application circuit.
2
VG1_A and VG1_B are connected internally so it would be enough to connect either one for proper operation.
3
VG2_A and VG2_B are connected internally so it would be enough to connect either one for proper operation.
4
The RF Input and Output pad have a ground-signal-ground with a nominal pitch of 1 mil (25 um). The RF
ground pads are 100 x 200 microns.
Die Assembly Notes:
•
•
•
•
•
•
•
Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure
application note at http://www.cree.com/products/wireless_appnotes.asp
Vacuum collet is the preferred method of pick-up.
The backside of the die is the Source (ground) contact.
Die back side gold plating is 5 microns thick minimum.
Thermosonic ball or wedge bonding are the preferred connection methods.
Gold wire must be used for connections.
Use the die label (XX-YY) for correct orientation.
Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
3
CMPA801B025D Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Block Diagram Showing Additional Capacitors for Operation Over 8.0 to 11.0 GHz
C2
C4
C10
Vd
C9
C1
C3
Vg
VG1_B
RF_In
VD1_B
VG2_B
VD2_B
1
2
2
1
VG1_A
C11
VD1_A
C5
VG2_A
RF_Out
VD2_A
C7
C6
C8
C12
Designator
Description
Quantity
C1,C2,C3,C4,C5,C6,C7,C8
CAP, 51pF, +/-10%, SINGLE LAYER, 0.035”, Er 3300, 100V, Ni/
Au TERMINATION
8
CAP, 680pF, +/-10%, SINGLE LAYER, 0.070”, Er 3300, 100V,
Ni/Au TERMINATION
4
C9,C10,C11,C12
Notes:
1
The input, output and decoupling capacitors should be attached as close as possible to the
die- typical distance is 5 to 10 mils with a maximum of 15 mils.
2
The MMIC die and capacitors should be connected with 2 mil gold bond wires.
Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4
CMPA801B025D Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance of the CMPA801B025D
Small Signal Gain Output Power & PAE
vs Frequency vs Frequency
CMPA801B025D
Output
Power
and =
Power
Added
vs. 25
Frequency
Small
Signal
Response,
VCMPA801B025D
=
28
V,
I
=
1.2
A
V
=
28
V,
IDQ
1.2
A,Efficiency
PIN =
dBm
DD
DQ
DD
VDD=28V, IDQ=1.2A
20
20
0
0
S21
-20
-20
S11
S22
-40
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
-40
13.0
VDD=28V, IDQ=1.2A, Pin=25dBm
60
40
Output Power (dBm), Power Added Efficiency (%)
S21 (dB)
40
S11 (dB), S22 (dB)
50
POUT
40
PAE
Pout
30
PAE
20
7.0
8.0
9.0
10.0
11.0
12.0
13.0
Frequency (GHz)
Frequency (GHz)
Associated Gain vs Frequency
VDD = CMPA801B025D
28 V, IDQAssociated
= 1.2Gain
A,vs.PFrequency
= 25 dBm
IN
VDD=28V, IDQ=1.2A, Pin=25dBm
30
Associated Gain (dB)
25
20
15
10
5
0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
Frequency (GHz)
Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
5
CMPA801B025D Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Part Number System
CMPA801B025D
Package
Power Output (W)
Upper Frequency (GHz)
Lower Frequency (GHz)
Cree MMIC Power Amplifier Product Line
Parameter
Value
Units
Lower Frequency
8.0
GHz
Upper Frequency1
11.0
GHz
25
W
Bare Die
-
Power Output
Package
Table 1.
Note : Alpha characters used in frequency
1
code indicate a value greater than 9.9 GHz.
See Table 2 for value.
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
6
CMPA801B025D Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use. No license is granted by implication or otherwise under
any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities
and are provided for information purposes only. These values can and do vary in different applications, and actual
performance can vary over time. All operating parameters should be validated by customer’s technical experts for each
application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could
result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a
nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/wireless
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.313.5639
Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
7
CMPA801B025D Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf