Datasheet RJH60M0DPQ-E0 R07DS1085EJ0200 Rev.2.00 Jun 13, 2013 600V - 22A - IGBT Application: Inverter Features • Short circuit withstand time (8 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 55 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 22 A, Rg = 5 Ω, Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 E 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Symbol VCES / VR VGES IC IC IC(peak) Note1 IDF IDF(peak) Note1 PC Note2 θj-c Note2 θj-cd Note2 Tj Tstg Ratings 600 ±30 45 22 66 22 66 116.8 1.07 2.3 150 –55 to +150 Unit V V A A A A A W °C/W °C/W °C °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C R07DS1085EJ0200 Rev.2.00 Jun 13, 2013 Page 1 of 9 RJH60M0DPQ-E0 Electrical Characteristics (Ta = 25°C) Item Symbol ICES / IR Min — Typ — Max 5 Unit μA IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Eon — 5 — — — — — — — — — — — — — — — 1.8 2.4 1050 75 45 65 10 39 40 25 90 55 0.48 ±1 7 2.3 — — — — — — — — — — — — μA V V V pF pF pF nC nC nC ns ns ns ns mJ Eoff Etotal tsc — — 6 0.38 0.86 8 — — — mJ mJ μs FRD Forward voltage VF FRD reverse recovery time FRD reverse recovery charge FRD peak reverse recovery current trr Qrr Irr — — — — 1.4 100 0.14 4.4 1.9 — — — V ns μC A Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time Test Conditions VCE = 600 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 22 A, VGE = 15 V Note3 IC = 45 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 22 A VCC = 300 V VGE = 15 V IC = 22 A Rg = 5 Ω Inductive load Tc = 100 °C VCC ≤ 360 V, VGE = 15 V IF = 22 A Note3 IF = 22 A diF/dt = 100 A/μs Notes: 3. Pulse test. R07DS1085EJ0200 Rev.2.00 Jun 13, 2013 Page 2 of 9 RJH60M0DPQ-E0 Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 50 Collector Current IC (A) Collector Dissipation Pc (W) 160 120 80 40 0 25 50 75 20 10 100 125 150 175 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 1000 100 PW 10 10 0µ =1 s 0µ Collector Current IC (A) 100 s 1 0.1 0.01 1 80 60 40 20 Tc = 25°C Single pulse 0 10 100 1000 0 200 400 600 800 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Output Characteristics Typical Output Characteristics 70 70 Tc = 25°C Pulse Test 60 15 V 18 V 50 Collector Current IC (A) Collector Current IC (A) 30 0 0 Collector Current IC (A) 40 12 V 40 30 10 V 20 10 Tc = 150°C Pulse Test 60 15 V 50 18 V 12 V 40 30 10 V 20 10 VGE = 8 V VGE = 8 V 0 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) R07DS1085EJ0200 Rev.2.00 Jun 13, 2013 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Page 3 of 9 RJH60M0DPQ-E0 Collector to Emitter Saturation Voltage VCE(sat) (V) 5 Tc = 25°C Pulse Test 4 3 IC = 45 A 2 22 A 11 A 1 8 10 12 14 16 18 5 Tc = 150°C Pulse Test 4 IC = 45 A 3 22 A 2 11 A 1 20 8 14 16 18 20 Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Ta = 25°C 150°C 50 40 30 20 VCE = 10 V Pulse Test 10 0 0 4 8 12 16 20 5 VGE = 15 V Pulse Test 4 IC = 45 A 3 22 A 2 11 A 1 0 −25 0 25 50 75 100 125 150 Junction Temparature Tj (°C) Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) Frequency Characteristics (Typical) 20 10 Collector Current IC(RMS) (A) Gate to Emitter Cutoff Voltage VGE(off) (V) 12 Gate to Emitter Voltage VGE (V) 60 8 IC = 10 mA 6 1 mA 4 2 VCE = 10 V Pulse Test 0 −25 10 Gate to Emitter Voltage VGE (V) 70 Collector Current IC (A) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 0 25 50 75 100 125 150 Junction Temparature Tj (°C) R07DS1085EJ0200 Rev.2.00 Jun 13, 2013 16 0 Collector current wave (Square wave) 12 Tj = 125°C Tc = 90°C VCE = 400 V VGE = 15 V Rg = 5 Ω duty = 50% 8 4 0 1 10 100 1000 Frequency f (kHz) Page 4 of 9 RJH60M0DPQ-E0 Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2) 100 Swithing Energy Losses E (mJ) Switching Times t (ns) 1000 tf 100 td(off) td(on) 10 tr VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 1 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 10 Eon Eoff 1 0.1 0.01 10 1 100 Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) Swithing Energy Losses E (mJ) Switching Time t (ns) 1000 tf td(off) td(on) tr 10 VCC = 300 V, VGE = 15 V IC = 22 A, Tc = 150°C 1 10 Eoff 1 Eon 0.1 VCC = 300 V, VGE = 15 V IC = 22 A, Tc = 150°C 0.01 1 10 1 100 tf td(off) tr 10 1 25 VCC = 300 V, VGE = 15 V IC = 22 A, Rg = 5 Ω 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) R07DS1085EJ0200 Rev.2.00 Jun 13, 2013 Swithing Energy Losses E (mJ) 1000 td(on) 100 Switching Characteristics (Typical) (6) Switching Characteristics (Typical) (5) 100 10 Gate Registance Rg (Ω) (Inductive load) Gate Resistance Rg (Ω) (Inductive load) Switching Times t (ns) 100 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) 100 10 10 1 Eoff Eon 0.1 0.01 25 VCC = 300 V, VGE = 15 V IC = 22 A, Rg = 5 Ω 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) Page 5 of 9 RJH60M0DPQ-E0 Typical Capacitance vs. Collector to Emitter Voltage VGE = 0 V f = 1 MHz Tc = 25°C Cies 1000 100 Coes Cres 10 0 50 100 150 200 250 800 600 12 400 8 200 0 300 0 Reverse Recovery Charge Qrr (μC) Reverse Recovery Time trr (ns) VCC = 300 V IF = 22 A 160 Tc = 150°C 120 25°C 40 0 80 120 160 60 0 80 1.0 VCC = 300 V IF = 22 A 0.8 0.6 Tc = 150°C 0.4 0.2 25°C 0 200 0 40 80 120 160 200 Diode Current Slope diF/dt (A/μs) Diode Current Slope diF/dt (A/μs) Reverse Recovery Current vs. Diode Current Slope (Typical) Forward Current vs. Forward Voltage (Typical) 16 70 VCC = 300 V IF = 22 A Forward Current IF (A) Reverse Recovery Current Irr (A) 40 Reverse Recovery Charge vs. Diode Current Slope (Typical) 200 40 20 Gate Charge Qg (nC) Reverse Recovery Time vs. Diode Current Slope (Typical) 0 4 VCC = 300 V IC = 22 A Tc = 25°C VCE Collector to Emitter Voltage VCE (V) 80 16 VGE Gate to Emitter Voltage VGE (V) Capacitance C (pF) 10000 Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) 12 Tc = 150°C 8 4 25°C 0 60 VCE = 0 V Pulse Test 50 40 30 20 Tc = 150°C 25°C 10 0 0 40 80 120 160 200 Diode Current Slope diF/dt (A/μs) R07DS1085EJ0200 Rev.2.00 Jun 13, 2013 0 0.4 0.8 1.2 1.6 2.0 C-E Diode Forward Voltage VCEF (V) Page 6 of 9 Normalized Transient Thermal Impedance γs (t) RJH60M0DPQ-E0 Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C 1 D=1 0.5 0.2 θj – c(t) = γs (t) • θj – c θj – c = 1.07°C/W, Tc = 25°C 0.1 0.1 0.05 0.02 0.01 1 shot pulse PDM D= PW T PW T 0.01 100 μ 1m 10 m 100 m Pulse Width 1 10 100 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.5 0.2 θj – c(t) = γs (t) • θj – c θj – c = 2.3°C/W, Tc = 25°C 0.1 0.0 5 0.1 PDM 0.02 0.01 1 shot pulse 0.01 100 μ R07DS1085EJ0200 Rev.2.00 Jun 13, 2013 1m D= PW T PW T 10 m 100 m Pulse Width 1 10 100 PW (s) Page 7 of 9 RJH60M0DPQ-E0 Switching Time Test Circuit Waveform 90% VGE Diode clamp 10% L IC D.U.T 90% VCC 90% Rg 10% 10% td(off) tf td(on) tr Waveform Diode Reverse Recovery Time Test Circuit VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS1085EJ0200 Rev.2.00 Jun 13, 2013 0.5 Irr 0.9 Irr Page 8 of 9 RJH60M0DPQ-E0 Package Dimension JEITA Package Code ⎯ RENESAS Code PRSS0003ZE-A Previous Code ⎯ MASS[Typ.] 6.0g Unit: mm φ3.60 ± 0.1 5.02 ± 0.19 15.94 ± 0.19 17.63 4.5 max 20.19 ± 0.38 21.13 ± 0.33 6.15 Package Name TO-247 5.45 0.1 2.10 +– 0.2 13.26 1.27 ± 0.13 5.45 0.71 ± 0.1 2.41 Ordering Information Orderable Part No. RJH60M0DPQ-E0#T2 R07DS1085EJ0200 Rev.2.00 Jun 13, 2013 Quantity 450 pcs Shipping Container Tube Page 9 of 9 Notice 1. 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