Preliminary Datasheet RJK60S1DPD 600V - 8A - SJ MOS FET High Speed Power Switching R07DS0853EJ0004 Rev.0.04 Nov 30, 2012 Features Superjunction MOSFET Low on-resistance RDS(on) = 0.84 typ. (at ID = 2.2A, VGS = 10 V, Ta = 25C) High speed switching tf = 61 ns typ. (at ID = 2.2 A, VGS = 10 V, RL = 136 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) D 4 1. 2. 3. 4. G 12 3 Gate Drain Source Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Tc = 25C Tc = 100C Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to cse thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS Note1,2 ID Note1,2 ID Note1 ID (pulse) Note1 IDR Note1 IDR (pulse) Note3 IAP Note3 EAR Pch Note4 ch-c Tch Tstg Ratings 600 +30, 20 8 5 16 8 16 1.1 0.066 31.2 4.0 150 –55 to +150 Unit V V A A A A A A mJ W C/W C C Limited by Tch max. Maximum duty cycle D = 0.5 STch = 25C, Tch 150C Value at Tc = 25C R07DS0853EJ0004 Rev.0.04 Nov 30, 2012 Page 1 of 6 RJK60S1DPD Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage RDS(on) Min 600 — — 3 — — Typ — — — — 0.84 2.10 Max — 1 ±0.1 5 1.05 — Unit V mA A V Rg — 3.4 — f = 1 MHz VDS = 25 V, VGS = 0 Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Ciss Coss Crss td(on) tr td(off) tf Qg — — — — — — — — 380 500 2.1 9 15 22 61 9.3 — — — — — — — — pF pF pF ns ns ns ns nC VDS = 25 V VGS = 0 f = 100 kHz Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Qgs Qgd VDF trr 2.1 4.5 1.0 210 14.5 — — 1.6 — — nC nC V ns A 1.7 — C Static drain to source on state resistance Gate resistance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Body-drain diode reverse recovery current Irr — — — — — Body-drain diode reverse recovery charge Qrr — Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = +30V, 20 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 2.2 A, VGS = 10 V Note5 Ta = 150C Note5 ID = 2.2 A, VGS = 10 V ID = 2.2 A VGS = 10 V RL = 136 Note5 Rg = 10 VDD = 480 V VGS = 10 V Note5 ID = 1 A IF = 4.4 A, VGS = 0 Note5 IF = 4.4 A VGS = 0 Note5 diF/dt = 100 A/s Notes: 5. Pulse test R07DS0853EJ0004 Rev.0.04 Nov 30, 2012 Page 2 of 6 RJK60S1DPD Preliminary Main Characteristics Channel Dissipation vs. Case Temperature Typical Output Characteristics 8 ID (A) Ta = 25°C Pulse Test 30 Drain Current Channel Dissipation Pch (W) 40 20 10 0 6 25 50 75 6.5 V 6V 2 VGS = 5.5 V 100 125 150 175 Case Temperature Tc (°C) 0 2 10 VDS (V) 6 8V 7 V 6.5 V 10 V 4 15 V 6V 2 VGS = 5.5 V Drain Current ID (A) VDS = 10 V Pulse Test 10 Tc = 75°C 1 25°C −25°C 0.1 0.01 0 2 4 6 8 Drain to Source Voltage VGS = 10 V Pulse Test Ta = 125°C 1 25°C 0.1 0.1 1 Drain Current R07DS0853EJ0004 Rev.0.04 Nov 30, 2012 10 ID (A) 2 4 6 8 10 Gate to Source Voltage VGS (V) VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical) 10 0 10 Static Drain to Source on State Resistance RDS(on) (Ω) ID (A) 8 100 Ta = 125°C Pulse Test Drain Current 6 Typical Transfer Characteristics 8 Drain to Source on State Resistance RDS(on) (Ω) 4 Drain to Source Voltage Typical Output Characteristics 0 7V 4 0 0 8V 10 V 15 V Static Drain to Source on State Resistance vs. Temperature (Typical) 3.0 2.5 VGS = 10 V Pulse Test 2.0 ID = 4.4 A 1.5 1.0 2.2 A 1.1 A 0.5 0 −25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Page 3 of 6 RJK60S1DPD Preliminary Typical Capacitance vs. Drain to Source Voltage 10000 1000 VGS = 0 f = 100 kHz Capacitance C (pF) Reverse Recovery Time trr (ns) Body-Drain Diode Reverse Recovery Time (Typical) 100 di/dt = 100 A/μs VGS = 0, Ta = 25°C 1000 Ciss 100 Coss 10 Crss 1 0.1 10 1 10 0 100 Reverse Drain Current IDR (A) 50 VDD = 480 V 300 V 100 V 400 200 8 4 VDD = 480 V 300 V 100 V 0 0 0 4 8 Gate Charge 12 25°C 1 VGS = 0 Pulse Test 0.1 0 3 0.1 mA 2 1 VDS = 10 V 0 −25 0 25 50 75 Case Temperature R07DS0853EJ0004 Rev.0.04 Nov 30, 2012 100 125 150 Tc (°C) 0.8 1.2 1.6 VSD (V) Drain to Source Breakdown Voltage vs. Case Temperature (Typical) Drain to Source Breakdown Voltage V(BR)DSS (V) ID = 1 mA 0.4 Source to Drain Voltage Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 4 VDS (V) Ta = 125°C Qg (nC) 5 300 10 16 6 250 IDR (A) 12 VDS 200 100 Reverse Drain Current 600 VGS (V) 16 VGS ID = 1 A Ta = 25°C 150 Reverse Drain Current vs. Source to Drain Voltage (Typical) Gate to Source Voltage VDS (V) Drain to Source Voltage 800 100 Drain to Source Voltage Dynamic Input Characteristics (Typical) Gate to Source Cutoff Voltage VGS(off) (V) Ta = 25°C 800 700 600 500 ID = 10 mA VGS = 0 400 −25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Page 4 of 6 RJK60S1DPD Preliminary Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin 10 Ω 10% 10% Vout 10% VDD = 300 V Vin 10 V 90% td(on) tr Avalanche Test Circuit VDS Monitor 90% tf td(off) Avalanche Waveform EAR = L 1 2 L • IAP2 • VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID 100 Ω Vin 0 R07DS0853EJ0004 Rev.0.04 Nov 30, 2012 VDD Page 5 of 6 RJK60S1DPD Preliminary Package Dimension Previous Code TMP3 0.76 ± 0.2 Unit: mm 2.3 0.5 ± 0.2 2.5Min 1Max 6.1 ± 0.2 6.6 5.3 ± 0.2 MASS[Typ.] 0.32g 0.76 0.1 ± 0.1 1.4 ± 0.2 RENESAS Code PRSS0004ZG-A 1 ± 0.2 JEITA Package Code SC-63 10.4Max Package Name MP-3A 0.5 ± 0.2 1 2.3 2.3 ± 0.2 Ordering Information Orderable Part No. RJK60S1DPD-00#J2 R07DS0853EJ0004 Rev.0.04 Nov 30, 2012 Quantity 3000 pcs Shipping Container Taping Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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