BCR10CS-12LB Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C) REJ03G0469-0300 Rev.3.00 Nov 30, 2007 Features • Non-Insulated Type • Planar Passivation Type • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 Outline RENESAS Package code: PRSS0004AB-A (Package name: TO-220S) 4 1 2, 4 3 2 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 1 3 Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control, solid state relay, copying machine, electric tool, electric heater control, and other general purpose control applications Warning 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 125°C will be supplied. Maximum Ratings Parameter Symbol Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 REJ03G0469-0300 Page 1 of 7 Rev.3.00 Nov 30, 2007 VDRM VDSM Voltage class 12 600 720 Unit V V BCR10CS-12LB (The product guaranteed maximum junction temperature of 150°C) Parameter RMS on-state current Symbol IT (RMS) Ratings 10 Unit A Surge on-state current ITSM 100 A I2 t 41.6 A2s PGM PG (AV) VGM IGM Tj Tstg — 5 0.5 10 2 – 40 to +150 – 40 to +150 1.2 W W V A °C °C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine full wave Note3 360° conduction, Tc = 128°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.5 Unit mA V Test conditions Tj = 150°C, VDRM applied Tc = 25°C, ITM = 15 A, Instantaneous measurement Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger currentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 30Note6 30Note6 30Note6 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD Rth (j-c) 0.2/0.1 — — — — 1.8 V °C/W Tj = 125°C/150°C, VD = 1/2 VDRM Junction to caseNote3 Note4 (dv/dt)c 10/1 — — V/µs Tj = 125°C/150°C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note5 commutating voltage Notes: 2. 3. 4. 5. 6. Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured on the T2 tab. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = – 5.0 A/ms 3. Peak off-state voltage VD = 400 V REJ03G0469-0300 Page 2 of 7 Rev.3.00 Nov 30, 2007 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR10CS-12LB (The product guaranteed maximum junction temperature of 150°C) Performance Curves 100 7 5 90 3 2 Surge On-State Current (A) 102 Tj = 150°C 101 7 5 3 2 Tj = 25°C 100 7 5 0.5 101 7 5 3 2 1.0 1.5 2.0 2.5 3.0 3.5 80 70 60 50 40 30 20 10 0 100 4.0 2 3 4 5 7 101 2 3 4 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V PGM = 5W VGT = 1.5V PG(AV) = 0.5W IGM = 2A 100 7 5 3 2 IRGT I IFGT I, IRGT III 10–1 7 VGD = 0.1V 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 103 Typical Example 7 5 3 IRGT I, IRGT III 2 102 7 5 IFGT I 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) REJ03G0469-0300 Page 3 of 7 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 5 3 2 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Rated Surge On-State Current Rev.3.00 Nov 30, 2007 Transient Thermal Impedance (°C/W) On-State Current (A) Maximum On-State Characteristics 102 2 3 5 7 103 2 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR10CS-12LB (The product guaranteed maximum junction temperature of 150°C) Allowable Case Temperature vs. RMS On-State Current 160 28 140 24 360° Conduction Resistive, 20 inductive loads 16 12 8 4 0 2 4 6 8 10 12 14 16 120 Curves apply regardless of 100 conduction angle 80 60 40 360° Conduction 20 Resistive, inductive loads 0 4 8 0 2 6 10 12 14 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 160 140 140 120 × 120 × t2.3 120 100 × 100 × t2.3 100 60 × 60 × t2.3 80 All fins are black 60 painted aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 2 4 6 8 10 12 14 120 100 80 60 40 20 0 16 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 106 7 5 3 2 16 RMS On-State Current (A) Ambient Temperature (°C) Ambient Temperature (°C) 0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) 32 Typical Example 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 REJ03G0469-0300 Page 4 of 7 Junction Temperature (°C) Rev.3.00 Nov 30, 2007 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) BCR10CS-12LB (The product guaranteed maximum junction temperature of 150°C) Breakover Voltage vs. Junction Temperature 7 5 3 2 101 7 5 3 2 T2+, G+ Typical Example T2–, G– 0 40 80 120 160 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) 100 –40 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) T2+, G– Typical Example Distribution 102 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) 103 7 5 3 2 160 Typical Example Tj = 150°C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/µs) Rate of Rise of Off-State Voltage (V/µs) Commutation Characteristics (Tj=125°C) Commutation Characteristics (Tj=150°C) 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 Minimum Characteristics Value Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz I Quadrant 3 2 100 7 0 10 III Quadrant 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) REJ03G0469-0300 Page 5 of 7 Rev.3.00 Nov 30, 2007 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Latching Current (mA) Latching Current vs. Junction Temperature 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 Typical Example Tj = 150°C IT = 4A τ = 500µs VD = 200V f = 3Hz I Quadrant 3 2 III Quadrant Minimum 100 Characteristics Value 7 0 10 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) BCR10CS-12LB (The product guaranteed maximum junction temperature of 150°C) Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 4 3 2 Typical Example IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω Recommended Circuit Values Around The Triac Load C1 A 6V V V 6Ω A V 330Ω Test Procedure III REJ03G0469-0300 Page 6 of 7 330Ω Test Procedure II Test Procedure I 6V R1 A 6V 330Ω Rev.3.00 Nov 30, 2007 C0 R0 C1 = 0.1 to 0.47µF C0 = 0.1µF R0 = 100Ω R1 = 47 to 100Ω BCR10CS-12LB (The product guaranteed maximum junction temperature of 150°C) Package Dimensions Previous Code TO-220S RENESAS Code PRSS0004AB-A 1.5Max +0.3 3.0 –0.5 Unit: mm 4.5 1.5Max 10.5Max MASS[Typ.] 1.2g 1.3 0 +0.3 –0 (1.5) JEITA Package Code SC-83 8.6 ± 0.3 9.8 ± 0.5 Package Name TO-220S 1 5 0.5 2.6 ± 0.4 4.5 0.8 Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Taping Quantity Plastic Magazine (Tube) 1000 50 Type name – T +Direction (1 or 2) +1 Standard order code example BCR10CS-12LB-T11 Type name BCR10CS-12LB Standard order code Note : Please confirm the specification about the shipping in detail. REJ03G0469-0300 Page 7 of 7 Rev.3.00 Nov 30, 2007 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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