RENESAS BCR3AS-12B

BCR3AS-12B
Triac
Low Power Use
(The product guaranteed maximum junction temperature of 150°C)
REJ03G0450-0300
Rev.3.00
Nov 30, 2007
Features
• Non-Insulated Type
• Planar Passivation Type
• IT(RMS) : 3 A
• VDRM : 600 V
• IFGT I, IRGT I, IRGT III : 15 mA
Outline
RENESAS Package code: PRSS0004ZA-A
(Package name: MP-3A)
4
2, 4
3
12
3
1.
2.
3.
4.
T1 Terminal
T2 Terminal
Gate Terminal
T2 Terminal
1
Applications
Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blanket, control of
household equipment such as washing machine, and other general purpose control applications
Warning
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum
junction temperature of 125°C will be supplied.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
REJ03G0450-0300
Page 1 of 7
Rev.3.00
Nov 30, 2007
Symbol
Voltage class
12
Unit
VDRM
VDSM
600
720
V
V
BCR3AS-12B (The product guaranteed maximum junction temperature of 150°C)
Parameter
RMS on-state current
Symbol
IT(RMS)
Ratings
3
Unit
A
Surge on-state current
ITSM
30
A
I2 t
3.7
A2s
PGM
PG(AV)
VGM
IGM
Tj
Tstg
—
3
0.3
6
0.3
– 40 to +150
– 40 to +150
0.26
W
W
V
A
°C
°C
g
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.7
Unit
mA
V
Gate non-trigger voltage
VFGT I
VRGT I
VRGT III
IFGT I
IRGT I
IRGT III
VGD
—
—
—
—
—
—
0.2/0.1
—
—
—
—
—
—
—
1.5
1.5
1.5
15
15
15
—
V
V
V
mA
mA
mA
V
Thermal resistance
Rth(j-c)
—
—
3.8
°C/W
Tj = 125°C/150°C,
VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
5/1
—
—
V/µs
Tj = 125°C/150°C
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 133°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Gate trigger currentNote2
I
II
III
I
II
III
Critical-rate of rise of off-state
Note4
commutating voltage
Test conditions
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 4.5 A,
Instantaneous measurement
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
VD = 400 V
REJ03G0450-0300
Page 2 of 7
Rev.3.00
Nov 30, 2007
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR3AS-12B (The product guaranteed maximum junction temperature of 150°C)
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
40
Surge On-State Current (A)
3
2
101
7
5
Tj = 150°C
3
2
100
7
5
Tj = 25°C
3
2
10–1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25
20
15
10
5
2 3 4 5 7 101
2 3 4 5 7 102
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
101
7
5
3
2
PGM = 3W
PG(AV) = 0.3W
IGM =
0.5A
IFGT I, IRGT III
IRGT I
100
7
5
3
2
VGD = 0.1V
10 –1
7
5
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
103
7
5
4
3
2
102
7
5
4
3
2
Typical Example
IRGT III
IFGT I, IRGT I
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20
0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
REJ03G0450-0300
Page 3 of 7
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
30
On-State Voltage (V)
5
3
2
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
35
0
100
4.0
Rev.3.00
Nov 30, 2007
Transient Thermal Impedance (°C/W)
On-State Current (A)
7
5
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
BCR3AS-12B (The product guaranteed maximum junction temperature of 150°C)
Allowable Case Temperature vs.
RMS On-State Current
Maximum On-State Power Dissipation
160
360° Conduction
Resistive,
6 inductive loads
4
2
0
0
1
2
3
4
5
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
120 Curves apply regardless
of conduction angle
100
RMS On-State Current (A)
160
Ambient Temperature (°C)
Case Temperature (°C)
140
8
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
On-State Power Dissipation (W)
10
106
7 Typical Example
5
3
2
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
103
103
Typical Example
7
5
4
3
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
REJ03G0450-0300
Page 4 of 7
Latching Current vs.
Junction Temperature
Latching Current (mA)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
Rev.3.00
Nov 30, 2007
7
5
3
2
102
Distribution
T2+, G–
Typical Example
7
5
3
2
101
7
5
3
T +, G+
2 2–
Typical Example
T2 , G–
100
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20
0 20 40 60 80 100 120 140 160
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
60
I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
160
Typical Example
Tj = 150°C
140
120
100
80
III Quadrant
60
I Quadrant
40
20
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
BCR3AS-12B (The product guaranteed maximum junction temperature of 150°C)
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
3 Minimum
Characteristics
2 Value
100
7 0
10
Rate of Rise of Off-State Voltage (V/µs)
101
7
5
III Quadrant
3
2
100
7 0
10
Typical Example
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I Quadrant
Minimum
Characteristics
Value
2 3
5 7 101
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
REJ03G0450-0300
Page 5 of 7
Rev.3.00
Nov 30, 2007
I Quadrant
2 3
5 7 101
2 3
5 7 102
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
III Quadrant
Rate of Decay of On-State
Commutating Current (A/ms)
Commutation Characteristics (Tj=150°C)
7
5
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
103
7
5
4
3
2
Typical Example
IRGT III
IRGT I
IFGT I
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (µs)
BCR3AS-12B (The product guaranteed maximum junction temperature of 150°C)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
Recommended Circuit Values Around The Triac
Load
C1
A
6V
330Ω
V
Test Procedure I
V
A
V
330Ω
Test Procedure III
REJ03G0450-0300
Page 6 of 7
330Ω
Test Procedure II
6Ω
6V
R1
A
6V
Rev.3.00
Nov 30, 2007
C0
R0
C1 = 0.1 to 0.47µF C0 = 0.1µF
R1 = 47 to 100Ω
R0 = 100Ω
BCR3AS-12B (The product guaranteed maximum junction temperature of 150°C)
Package Dimensions
Previous Code

1Max
Unit: mm
2.3
0.5 ± 0.2
0.1 ± 0.1
2.5Min
6.1 ± 0.2
6.6
5.3 ± 0.2
0.76 ± 0.2
MASS[Typ.]
0.32g
1.4 ± 0.2
RENESAS Code
PRSS0004ZA-A
1 ± 0.2
JEITA Package Code
SC-63
10.4Max
Package Name
MP-3A
0.76
0.5 ± 0.2
1
2.3
2.3 ± 0.2
Order Code
Lead form
Surface-mounted type
Surface-mounted type
Standard packing
Type name – T +Direction (1 or 2) +3
Standard order
code example
BCR3AS-12B-T13
Type name
BCR3AS-12B
Quantity
Taping
3000
Plastic Magazine
(Tube)
75
Standard order code
Note : Please confirm the specification about the shipping in detail.
REJ03G0450-0300
Page 7 of 7
Rev.3.00
Nov 30, 2007
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.2