BCR3AS-12B Triac Low Power Use (The product guaranteed maximum junction temperature of 150°C) REJ03G0450-0300 Rev.3.00 Nov 30, 2007 Features • Non-Insulated Type • Planar Passivation Type • IT(RMS) : 3 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 15 mA Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 4 2, 4 3 12 3 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 1 Applications Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blanket, control of household equipment such as washing machine, and other general purpose control applications Warning 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 125°C will be supplied. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 REJ03G0450-0300 Page 1 of 7 Rev.3.00 Nov 30, 2007 Symbol Voltage class 12 Unit VDRM VDSM 600 720 V V BCR3AS-12B (The product guaranteed maximum junction temperature of 150°C) Parameter RMS on-state current Symbol IT(RMS) Ratings 3 Unit A Surge on-state current ITSM 30 A I2 t 3.7 A2s PGM PG(AV) VGM IGM Tj Tstg — 3 0.3 6 0.3 – 40 to +150 – 40 to +150 0.26 W W V A °C °C g Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.7 Unit mA V Gate non-trigger voltage VFGT I VRGT I VRGT III IFGT I IRGT I IRGT III VGD — — — — — — 0.2/0.1 — — — — — — — 1.5 1.5 1.5 15 15 15 — V V V mA mA mA V Thermal resistance Rth(j-c) — — 3.8 °C/W Tj = 125°C/150°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 5/1 — — V/µs Tj = 125°C/150°C I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine full wave Note3 360° conduction, Tc = 133°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 I II III I II III Critical-rate of rise of off-state Note4 commutating voltage Test conditions Tj = 150°C, VDRM applied Tc = 25°C, ITM = 4.5 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured on the T2 tab. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = –1.5 A/ms 3. Peak off-state voltage VD = 400 V REJ03G0450-0300 Page 2 of 7 Rev.3.00 Nov 30, 2007 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR3AS-12B (The product guaranteed maximum junction temperature of 150°C) Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 102 40 Surge On-State Current (A) 3 2 101 7 5 Tj = 150°C 3 2 100 7 5 Tj = 25°C 3 2 10–1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 20 15 10 5 2 3 4 5 7 101 2 3 4 5 7 102 Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 101 7 5 3 2 PGM = 3W PG(AV) = 0.3W IGM = 0.5A IFGT I, IRGT III IRGT I 100 7 5 3 2 VGD = 0.1V 10 –1 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 5 4 3 2 102 7 5 4 3 2 Typical Example IRGT III IFGT I, IRGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) REJ03G0450-0300 Page 3 of 7 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 30 On-State Voltage (V) 5 3 2 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 35 0 100 4.0 Rev.3.00 Nov 30, 2007 Transient Thermal Impedance (°C/W) On-State Current (A) 7 5 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR3AS-12B (The product guaranteed maximum junction temperature of 150°C) Allowable Case Temperature vs. RMS On-State Current Maximum On-State Power Dissipation 160 360° Conduction Resistive, 6 inductive loads 4 2 0 0 1 2 3 4 5 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 120 Curves apply regardless of conduction angle 100 RMS On-State Current (A) 160 Ambient Temperature (°C) Case Temperature (°C) 140 8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) On-State Power Dissipation (W) 10 106 7 Typical Example 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) 103 103 Typical Example 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) REJ03G0450-0300 Page 4 of 7 Latching Current vs. Junction Temperature Latching Current (mA) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature Rev.3.00 Nov 30, 2007 7 5 3 2 102 Distribution T2+, G– Typical Example 7 5 3 2 101 7 5 3 T +, G+ 2 2– Typical Example T2 , G– 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) Commutation Characteristics (Tj=125°C) 160 Typical Example Tj = 150°C 140 120 100 80 III Quadrant 60 I Quadrant 40 20 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Breakover Voltage vs. Junction Temperature Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) BCR3AS-12B (The product guaranteed maximum junction temperature of 150°C) 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 3 Minimum Characteristics 2 Value 100 7 0 10 Rate of Rise of Off-State Voltage (V/µs) 101 7 5 III Quadrant 3 2 100 7 0 10 Typical Example Tj = 150°C IT = 4A τ = 500µs VD = 200V f = 3Hz I Quadrant Minimum Characteristics Value 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) REJ03G0450-0300 Page 5 of 7 Rev.3.00 Nov 30, 2007 I Quadrant 2 3 5 7 101 2 3 5 7 102 Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time III Quadrant Rate of Decay of On-State Commutating Current (A/ms) Commutation Characteristics (Tj=150°C) 7 5 Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz 103 7 5 4 3 2 Typical Example IRGT III IRGT I IFGT I 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) BCR3AS-12B (The product guaranteed maximum junction temperature of 150°C) Gate Trigger Characteristics Test Circuits 6Ω 6Ω Recommended Circuit Values Around The Triac Load C1 A 6V 330Ω V Test Procedure I V A V 330Ω Test Procedure III REJ03G0450-0300 Page 6 of 7 330Ω Test Procedure II 6Ω 6V R1 A 6V Rev.3.00 Nov 30, 2007 C0 R0 C1 = 0.1 to 0.47µF C0 = 0.1µF R1 = 47 to 100Ω R0 = 100Ω BCR3AS-12B (The product guaranteed maximum junction temperature of 150°C) Package Dimensions Previous Code 1Max Unit: mm 2.3 0.5 ± 0.2 0.1 ± 0.1 2.5Min 6.1 ± 0.2 6.6 5.3 ± 0.2 0.76 ± 0.2 MASS[Typ.] 0.32g 1.4 ± 0.2 RENESAS Code PRSS0004ZA-A 1 ± 0.2 JEITA Package Code SC-63 10.4Max Package Name MP-3A 0.76 0.5 ± 0.2 1 2.3 2.3 ± 0.2 Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Type name – T +Direction (1 or 2) +3 Standard order code example BCR3AS-12B-T13 Type name BCR3AS-12B Quantity Taping 3000 Plastic Magazine (Tube) 75 Standard order code Note : Please confirm the specification about the shipping in detail. 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