BCR30AM-12LA Triac Medium Power Use REJ03G0342-0300 Rev.3.00 Nov 30, 2007 Features • IT(RMS) : 30 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 50 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 4 2, 4 3 1 1. 2. 3. 4. 1 2 T1 Terminal T2 Terminal Gate Terminal T2 Terminal 3 Applications Contactless AC switch, electric heater control, light dimmer, on/off and speed control of small induction motor, on/off control of copier lamp Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 REJ03G0342-0300 Page 1 of 6 Rev.3.00 Nov 30, 2007 Symbol Voltage class 12 Unit VDRM VDSM 600 720 V V BCR30AM-12LA Parameter RMS on-state current Symbol IT(RMS) Ratings 30 Unit A Surge on-state current ITSM 300 A I2 t 378 A2s PGM PG(AV) VGM IGM Tj Tstg — 5 0.5 10 2 – 40 to +125 – 40 to +125 4.8 W W V A °C °C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine full wave, Tc = 75°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ Note2 Gate trigger current Ι ΙΙ ΙΙΙ Gate non-trigger voltage Thermal resistance Symbol IDRM VTM VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth(j-c) Min. — — — — — — — — 0.2 — Typ. — — — — — — — — — — Max. 3.0 1.6 2.5 2.5 2.5 50 50 50 — 1.2 Unit mA V V V V mA mA mA V °C/W Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 45A Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Critical-rate of rise of off-state Note4 commutating voltage (dv/dt)c 20 — — V/µs Tj = 125°C Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.3°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = –16 A/ms 3. Peak off-state voltage VD = 400V REJ03G0342-0300 Page 2 of 6 Rev.3.00 Nov 30, 2007 Commutating voltage and current waveforms inductive load Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR30AM-12LA Performance Curves 103 7 5 3 2 Rated Surge On-State Current 500 Tj = 25°C Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 102 7 5 3 2 101 7 5 3 2 100 2 3 4 5 7 101 2 3 4 5 7 102 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V 101 7 5 VGT = 2.5V 3 2 PG(AV) = 0.5W PGM = 5W IGM = 2A 100 7 5 3 2 102 7 5 4 3 2 Typical Example IRGT I, IRGT III IFGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) Typical Example 102 7 5 4 3 2 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) REJ03G0342-0300 Page 3 of 6 103 7 5 4 3 2 Gate Current (mA) 103 7 5 4 3 2 101 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Conduction Time (Cycles at 60Hz) Rev.3.00 Nov 30, 2007 Transient Thermal Impedance (°C/W) Gate Voltage (V) 200 On-State Voltage (V) VGD = 0.2V IFGT I, IRGT I, IRGT III 10 –1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 300 0 100 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 102 7 5 3 2 400 102 2 3 5 7 103 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR30AM-12LA Allowable Case Temperature vs. RMS On-State Current Maximum On-State Power Dissipation 160 360° Conduction Resistive, 30 inductive loads 20 10 10 0 30 40 100 80 60 40 50 20 40 30 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current All fins are black painted aluminum and greased Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 140 120 100 80 160 × 160 × t2.3 60 120 × 120 × t2.3 40 100 × 100 × t2.3 20 0 120 RMS On-State Current (A) 160 Ambient Temperature (°C) 20 Curves apply regardless of conduction angle 140 20 Resistive, inductive loads 0 0 10 0 5 10 15 20 25 30 35 160 Ambient Temperature (°C) 0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) 40 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 40 1 2 3 4 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 105 7 5 3 2 Typical Example 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 REJ03G0342-0300 Page 4 of 6 0 20 40 60 80 100 120 140 Junction Temperature (°C) Rev.3.00 Nov 30, 2007 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) On-State Power Dissipation (W) 50 103 7 5 4 3 2 5 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 08 20 40 60 0 100 120 140 Junction Temperature (°C) BCR30AM-12LA Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 08 20 40 60 0 100 120 140 160 Typical Example Tj = 125°C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 2 3 5 7 10 2 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/µs) Commutation Characteristics Gate Trigger Current vs. Gate Current Pulse Width 7 5 Minimum 4 Characteristics 3 Value 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time III Quadrant 101 7 5 4 3 Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz I Quadrant 2 100 7 101 2 3 4 5 7 102 2 3 4 5 7 103 Rate of Decay of On-State Commutating Current (A/ms) 6Ω 6Ω A 6V V A 6V 330Ω Test Procedure I V A 6V V 330Ω Test Procedure II 6Ω 330Ω Test Procedure III Rev.3.00 Nov 30, 2007 103 7 5 4 3 2 Typical Example IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits REJ03G0342-0300 Page 5 of 6 Breakover Voltage vs. Rate of Rise of Off-State Voltage Junction Temperature (°C) Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Breakover Voltage vs. Junction Temperature BCR30AM-12LA Package Dimensions JEITA Package Code SC-65 Previous Code TO-3P / TO-3PV RENESAS Code PRSS0004ZE-A 15.6 ± 0.3 MASS[Typ.] 5.0g Unit: mm 4.8 ± 0.2 1.5 2.0 0.3 19.9 ± 0.2 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Package Name TO-3P 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 20 30 Standard order code Type name Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. REJ03G0342-0300 Page 6 of 6 Rev.3.00 Nov 30, 2007 Standard order code example BCR30AM-12LA BCR30AM-12LA-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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