RENESAS RJK1212DNS_13

Preliminary Datasheet
RJK1212DNS
120V, 3A, 310m max.
Silicon N Channel Power MOS FET
Power Switching
R07DS0092EJ0400
Rev.4.00
Apr 11, 2013
Features





High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 240 m typ. (at VGS = 10 V)
 Pb-free
 Halogen-free
Outline
RENESAS Package code: PWSN0008JB-A
(Package name: HWSON-8)
5 6 7 8
D D D D
5 6 7 8
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
4
G
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
120
+12, -5
3
9
3
2
0.34
10
12.5
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25C, Rg  50 
3. Tc = 25C
R07DS0092EJ0400 Rev.4.00
Apr 11, 2013
Page 1 of 6
RJK1212DNS
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
120
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
240
250
6.5
450
42
17
2.7
4.0
1.5
1.0
6.7
3.0
32
Max
—
± 0.1
10
2.5
310
340
—
—
—
—
—
—
—
—
—
—
—
Unit
V
A
A
V
m
m
S
pF
pF
pF

nC
nC
nC
ns
ns
ns
—
—
—
3.4
0.83
30
—
1.1
—
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = +12, -5 V, VDS = 0
VDS = 120 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 1.5 A, VGS = 10 V Note4
ID = 1.5 A, VGS = 4.5 V Note4
ID = 1.5 A, VDS = 5 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 50 V
VGS = 4.5 V
ID = 3 A
VGS = 10 V, ID = 1.5 A
VDD  30 V
RL = 20 
Rg = 4.7 
IF = 3 A, VGS = 0 Note4
IF =3 A, VGS = 0
diF/ dt = 100 A/ s
Notes: 4. Pulse test
R07DS0092EJ0400 Rev.4.00
Apr 11, 2013
Page 2 of 6
RJK1212DNS
Preliminary
Main Characteristics
Maximum Safe Operation Area
50
10
10
8
6
PW = 10 ms
0.1 Operation in this
area is limited by
RDS(on)
io
n
100
150
0.01
0.001
0.1
200
1
10
100 300
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
10
10 V
8
4.5 V
Drain Current ID (A)
Pulse Test
Tc = 25°C
3.4 V
3.2 V
6
4
3.0 V
2
VGS = 2.8 V
2
4
6
8
VDS = 5 V
Pulse Test
8 Tc = 25°C
6
4
2
0
10
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
2.0
Drain to Source on State Resistance
RDS(on) (mΩ)
Drain Current ID (A)
1
t
ra
50
10
Drain to Source Saturation Voltage
VDS(on) (V)
s
μs
μs
Tc = 25°C
1 shot Pulse
0
0
m
0
pe
2
10
O
4
10
1
C
Drain Current ID (A)
12
D
Channel Dissipation Pch (W)
Power vs.Temperature Derating
Pulse Test
1.6
1.2
ID = 3 A
0.8
2A
0.4
0
1A
2
4
6
8
10
12
Gate to Source Voltage VGS (V)
R07DS0092EJ0400 Rev.4.00
Apr 11, 2013
1000
VGS = 4.5 V
10 V
100
Pulse Test
10
0.1
1
10
Drain Current ID (A)
Page 3 of 6
Preliminary
Typical Capacitance vs.
Drain to Source Voltage (Typical)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
1000
Capacitance C (pF)
800
10000
Pulse Test
ID = 1.5 V
600
VGS = 4.5 V
400
10 V
200
1000
Ciss
100
Coss
10
Crss
VGS = 0
f = 1 MHz
0
−25
0
25
50
75
1
0.1
100 125 150
1
10
100
1000
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics (Typical)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
60
16
ID = 3 A
Ta = 25 °C
VDD = 50 V
12
25 V
VDS
VGS
10 V
40
8
20
4
VDD = 50 V
25 V
10 V
0
2
4
0
6
8
10
Gate Charge Qg (nC)
5
Reverse Drain Current IDR (A)
80
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
RJK1212DNS
VGS = 0 V
Pulse Test
Ta = 25 °C
4
3
2
1
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Avalanche Energy EAS (mJ)
0.5
IAP = 2 A
VDD = 50 V
duty < 0.1%
Rg ≥ 50 Ω
0.4
0.3
0.2
0.1
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0092EJ0400 Rev.4.00
Apr 11, 2013
Page 4 of 6
RJK1212DNS
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
0.3
0.2
0.1
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 12.5°C/W, Tc = 25°C
0.05
2
0.0
PDM
1
0.0
0.03
ot
1sh
0.01
10 μ
D=
PW
T
PW
T
e
puls
100 μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
EAS =
L
VDS
Monitor
1
L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
15 V
50 Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
Vin
Vout
Vin
10 V
10%
10%
VDS
= 50 V
90%
td(on)
R07DS0092EJ0400 Rev.4.00
Apr 11, 2013
10%
tr
90%
td(off)
tf
Page 5 of 6
RJK1212DNS
Preliminary
Package Dimensions
3.3 ± 0.1
Previous Code
⎯
MASS[Typ.]
0.022g
2.9 ± 0.1
0.1 Min
3.3 ± 0.1
0.8 Max
+0.15
−0.1
RENESAS Code
PWSN0008JB-A
0.04Max
0Min
Stand-off
0.22 Typ
+0.15
−0.1
0.65 Typ
(2.55)
0.32 ± 0.08
0.4
0.575 Typ
2.27 ± 0.2
0.4
JEITA Package Code
P-HWSON8-2.9x3.1-0.65
1.55 ± 0.2
Package Name
HWSON-8
3.1 ± 0.1
Ordering Information
Orderable Part Number
RJK1212DNS-00-J5
Note:
Quantity
5000 pcs
Shipping Container
Taping
The symbol of 2nd "-" is occasionally presented as "#".
R07DS0092EJ0400 Rev.4.00
Apr 11, 2013
Page 6 of 6
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