RENESAS RJP30H2DPK-M0

Preliminary Datasheet
RJP30H2DPK-M0
Silicon N Channel IGBT
High speed power switching
R07DS0467EJ0200
Rev.2.00
Jun 15, 2011
Features




Trench gate and thin wafer technology (G6H-II series)
Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
High speed switching: tf = 100 ns typ, tf = 180 ns typ
Low leak current: ICES = 1 A max
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name: TO-3PSG)
C
4
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
G
1
2
3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Symbol
VCES
VGES
Ic
ic(peak) Note1
PC Note2
j-c
Tj
Tstg
Ratings
360
±30
35
250
60
2.08
150
–55 to +150
Unit
V
V
A
A
W
°C/ W
°C
°C
Notes: 1. PW  10 s, duty cycle  1%
2. Tc = 25C
R07DS0467EJ0200 Rev.2.00
Jun 15, 2011
Page 1 of 6
RJP30H2DPK-M0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Symbol
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Min
—
—
2.5
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
1.4
1200
60
30
37
6
10
0.02
0.1
0.06
0.18
Max
1
±100
5
1.9
—
—
—
—
—
—
—
—
—
—
Unit
A
nA
V
V
pF
pF
pF
nC
nC
nC
s
s
s
s
Test Conditions
VCE = 360 V, VGE = 0
VGE = ± 30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 35 A, VGE = 15 V Note3
VCE = 25 V
VGE = 0
f = 1 MHz
VGE = 15 V
VCE = 150 V
IC = 35 A
IC = 35 A
RL = 4.5 
VGE = 15 V
RG = 5 
Notes: 3. Pulse test.
R07DS0467EJ0200 Rev.2.00
Jun 15, 2011
Page 2 of 6
RJP30H2DPK-M0
Preliminary
Main Characteristics
Maximum Safe Operation Area
Typical Output Characteristics (1)
10
100
Collector Current IC (A)
100
μs
PW
=
10
10
s
0μ
Collector Current IC (A)
1000
1
0.1
Ta = 25°C
1 shot pulse
0.01
0.1
80
7V
6.5 V
8V
10 V
15 V
60
6V
40
5.5 V
20
VGE = 5 V
0
1
10
100
0
1000
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics (2)
Typical Transfer Characteristics
200
50
Collector Current IC (A)
12 V
160
8V
15 V
7V
120
Ta = 25°C
Pulse Test
80
VCE = 10 V
Pulse Test
9V
10 V
Collector Current IC (A)
Ta = 25°C
Pulse Test
6V
40
40
Tc = 75°C
25°C
30
–25°C
20
10
VGE = 5 V
0
0
0
2
4
6
8
10
0
IC = 35 A
80 A
120 A
3
2
1
Pulse Test
Ta = 25°C
0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
R07DS0467EJ0200 Rev.2.00
Jun 15, 2011
6
8
10
Collector to Emitter Saturation Voltage
vs. Collector Current (Typical)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
4
4
Gate to Emitter Voltage VGE (V)
Collector to Emitter Voltage VCE (V)
5
2
10
VGE = 15 V
Pulse Test
Tc = –25°C
1
25°C
75°C
0.1
1
10
100
Collector Current IC (A)
Page 3 of 6
RJP30H2DPK-M0
Preliminary
Typical Capacitance vs.
Colloctor to Emitter Voltage
Capacitance C (pF)
VGE = 0 V, f = 1 MHz
Ta = 25°C
Cies
1000
100
Coes
Cres
10
0
20
40
60
80
100
400
300
VGE
12
200
8
100
4
VCE
0
0
8
16
24
32
0
40
Colloctor to Emitter Voltage VCE (V)
Gate Charge Qg (nC)
Switching Characteristics (Typical) (1)
Switching Characteristics (Typical) (2)
1000
1000
VCC = 150 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
IC = 35 A, VGE = 15 V
RL = 4.5 Ω, Ta = 25°C
Switching Time t (ns)
Switching Time t (ns)
16
VCC = 150 V
IC = 35 A
Ta = 25°C
Gate to Emitter Voltage VGE (V)
10000
Colloctor to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
tf
100
td(off)
tr
tf
tr
100
td(off)
td(on)
td(on)
10
10
1
10
100
1
10
100
Gate Resistance Rg (Ω)
Colloctor Current IC (A)
Switching Characteristics (Typical) (3)
1000
Switching Time t (ns)
IC = 35 A, VGE = 15 V
RL = 4.5 Ω, Rg = 5 Ω
tf
tr
100
td(off)
td(on)
10
0
25
50
75
100
125
150
Case Temperature Tc (°C)
R07DS0467EJ0200 Rev.2.00
Jun 15, 2011
Page 4 of 6
RJP30H2DPK-M0
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
0.1
θj−c(t) = γs (t) θj−c
θj−c = 2.08°C/W, Tc = 25°C
0.05
0.02
1
PDM
tp
ho
10 μ
PW
T
PW
T
1s
0.01
D=
ul
se
0.0
0.03
100 μ
1m
10 m
100 m
1
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
Ic Monitor
90%
RL
Vin
Vin Monitor
10%
90%
Rg
D.U.T.
Vin = 15 V
VCC
Ic
10%
10%
td(on)
tr
ton
R07DS0467EJ0200 Rev.2.00
Jun 15, 2011
90%
td(off)
tf
toff
Page 5 of 6
RJP30H2DPK-M0
Preliminary
JEITA Package Code
⎯
RENESAS Code
PRSS0004ZH-A
Previous Code
TO-3PSG/TO-3PSGV
15.60 ± 0.2
13.60
MASS[Typ.]
3.7g
Unit: mm
4.80 ± 0.2
0.60 ± 0.2
φ3.2 ± 0.2
20.0 ± 0.2
2.0
2.4
0.50typ
18.70 ± 0.2
1.0
3.50
14.90 ± 0.1
3.8
Package Name
TO-3PSG
5.00 ± 0.3
Package Dimension
1.40
3-1.00 ± 0.2
5.45 ± 0.5
5.45 ± 0.5
0.60 ± 0.1
1.50 ± 0.2
2.825 ± 0.15
Ordering Information
Orderable Part Number
RJP30H2DPK-M0-T2
R07DS0467EJ0200 Rev.2.00
Jun 15, 2011
Quantity
360 pcs
Shipping Container
Box (Tube)
Page 6 of 6
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